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Photovoltaik


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Ansprechpartner

Thomas Hannappel

Fachgebietsleiter

Telefon 69-2566

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Ihre Position

INHALTE

Publikationen

2017

1.) M. Steidl, C. Koppka, L. Winterfeld, K. Peh, B. Galiana, O. Supplie, P. Kleinschmidt, E. Runge, H. Hannappel;
Impact of Rotational Twin Boundaries and Lattice Mismatch on III–V Nanowire Growth

ACS Nano (in print, 2017)

2.) M. M. May, D. Lackner, J. Ohlmann, F. Dimroth, R. van de Krol, T. Hannappel, K. Schwarzburg;
On the benchmarking of multi-junction photoelectrochemical fuel generating devices
Sustainable Energy & Fuels 1 (2017) 492 

3.) W. Zhao, M. Steidl, A. Paszuk, S. Brückner, A. Dobrich, O. Supplie, P. Kleinschmidt, T. Hannappel;
Analysis of the Si(111) surface prepared in chemical vapor ambient for subsequent III-V heteroepitaxy
Applied Surface Science 392 (2017) 1043

4.) O. Supplie, M. M. May, S. Brückner, N. Brezhneva, T. Hannappel, E. V.  Skorb;
In situ characterization of interfaces relevant for efficient photo-induced reactions
Advanced Materials Interfaces 4 (2017) 1601118

5.) A. Nägelein, L. Liborius, M. Steid, C. Blumberg, P. Kleinschmidt, A. Poloczek, T. Hannappel;
Comparative analysis on resistance profiling along tapered semiconductor nanowires: Multi-tip technique vs. transmission line method 
Journal of Physics: Condensed Matter 29 (2017) 394007

6.) W.-H. Cheng, M.H. Richter, M.M. May, J. Ohlmann, D. Lackner, F. Dimroth, T. Hannappel, H.A. Atwater, H.-J. Lewerenz;
Monolithic Photoelectrochemical Device for 19% Direct Water Splitting
Nature Energy, in review, arXiv:1706.01493

7.) A. Paszuk, O. Supplie, B. Kim, S. Brückner, M. Nandy, A. Heinisch, P. Kleinschmidt, Y. Nakano, M. Sugiyama, T. Hannappel;
GaAsP/Si tandem solar cells: In situ study on GaP/Si:As virtual substrate preparation

Solar Energy Materials and Solar Cells (in print, 2017)

8.) B. Kim, K. Toprasertpong, A. Paszuk, O. Supplie, Y. Nakano, T. Hannappel, M. Sugiyama;
GaAsP/Si tandem solar cells: Realistic prediction of efficiency gain by applying strain-balanced multiple quantum wells

Solar Energy Materials and Solar Cells (in print 2017)


2016

1.) A. Paszuk, A. Dobrich, C. Koppka, S. Brückner, M. Duda, P. Kleinschmidt, O. Supplie, T. Hannappel;
In situ preparation of Si p-n junctions and subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Journal of Crystal Growth 464 (2016) 14

2.) O. Romanyuk, O. Supplie, T. Susi, M. M. May, and T. Hannappel;
Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
Physical Review B 94 (2016) 155309

3.) T. Hannappel, O. Supplie, S. Brückner, M. M. May, P. Kleinschmidt, and O. Romanyuk;
Comment on pyramidal structure formation at the interface between III/V semiconductors and silicon
arXiv:1610.01758 [cond-mat.mtrl-sci]

4.)
C. Koppka, A. Paszuk, M. Steidl, O. Supplie, P. Kleinschmidt, T. Hannappel;
Suppression of rotational twin formation in virtual GaP/Si(111) substrates for III−V nanowire growth
Crystal Growth & Design, DOI:10.1021/acs.cgd.6b00541

5.) A. Dobrich, K. Schwarzburg, T.  Hannappel;
Interface analysis on MOVPE grown InP-GaInAs-InP double heterostructures for application in infrared solar cells
Solar Energy Materials & Solar Cells 148  (2016) 25

6.) P. Sippel, S. Heitz, M. Elagin, M. P. Semtsiv, R. Eichberger, W. T. Masselink, T. Hannappel, K. Schwarzburg;
Concept and demonstration of an intermediate band tandem device for solar energy conversion
Progress in Photovoltaics 24 (2016) 307  

7.) 
C. Prohl, H. Döscher, P. Kleinschmidt, T. Hannappel, A. Lenz;
Cross-sectional scanning tunneling microscopy of antiphase boundaries in epitaxially grown GaP layers on Si (001)
Journal of Vacuum Science & Technology A 34 (3), (2016) 031102 

8.) J. Müller, T. Hannappel, M. Hoffmann, H.O. Jacobs, Y. Lei, I.W. Rangelow, P. Schaaf;
Application of nanostructuring, nanomaterials and micro-nano-integration for improved components and system's performance
2016 Pan Pacific Microelectronics Symposium (Pan Pacific), 1-10

 

2015

1.) M. M. May, H.-J. Lewerenz, D. Lackner, F. Dimroth, T. Hannappel;
Efficient direct solar-to-hydrogen conversion by in situ interface transformation of a tandem structure
Nature Communications 6 (2015) 8286

2.) P. Sippel, W. Albrecht, J. C. van der Bok, R. J. A. Van Dijk-Moes, T. Hannappel, R. Eichberger, D. Vanmaekelbergh;
Femtosecond Cooling of Hot Electrons in CdSe Quantum-Well Platelets
Nano Lett., 15 (2015) 2409 

3.) O. Supplie, M.M. May, G. Steinbach, O. Romanyuk, F. Grosse, A. Nägelein, P. Kleinschmidt, S. Brückner, T. Hannappel;
Time-Resolved In Situ Spectroscopy During Formation of the GaP/Si(100) Heterointerface
J. Phys. Chem. Lett 6 (2015) 464

4.) O. Supplie, MM. May, P. Kleinschmidt, A. Nägelein, A. Paszuk, S. Brückner, T. Hannappel;
In situ controlled heteroepitaxy of single-domain GaP on As-modified Si(100)
APL Mater. 3 (2015) 126110

5.) O. Supplie, M.M. May, C. Höhn, H. Stange, A. Müller, P. Kleinschmidt, S. Brückner, T. Hannappel;
Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor Residuals
ACS Applied Materials & Interfaces (2015) 7:9323

6.) A. Paszuk, S. Brueckner, M. Steidl, W. Zhao, A. Dobrich, O. Supplie, P. Kleinschmidt, W. Prost, T. Hannappel;
Controlling the polarity of metalorganic vapor phase epitaxy-grown GaP on Si(111) for subsequent III-V nanowire growth
Appl. Phys. Lett.  106 (2015)  231601 

7.)  P. Sippel, J. M. Szarko, T. Hannappel, R. Eichberger;
Ultrafast electron scattering from surface to bulk states at the InP(100) surface

Phys. Rev. B 91 (2015) 115312

8.) O. Supplie, S. Brückner, M. M. May, T. Hannappel;
Scrutinising growth 
Compound Semiconductors 21 5 (2015) 57

9.) O. Supplie, M. M. May, S. Brückner, A. Nägelein, P. Kleinschmidt, T. Hannappel;
Watching the formation of the GaP/Si(100) heterointerface in situ
Proceedings of the 42nd IEEE Photovoltaic Specialist Conference (PVSC), 2015

2014

1.) O. Supplie, S. Brückner, O. Romanyuk, H. Döscher, C. Höhn, M. M. May, P. Kleinschmidt, F. Grosse, T. Hannappel;
Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory
Phys. Rev. B90 (2014) 235301


2.) M.M. May, H.J. Lewerenz, T. Hannappel;
Optical in Situ Study of InP(100) Surface Chemistry: Dissociative Adsorption of Water and Oxygen
J. Phys. Chem. C 118 (33) (2014) 19032-19041

3.) R. Schütz, S. Malhotra, I. Thomas, C. Strothkämper, A. Bartelt, K. Schwarzburg, T. Hannappel, C. Fasting, R. Eichberger;
Dynamics of a Covalently Conjoined FRET Dye Ensemble for Electron Injection into ZnO Nanorods
J. Phys. Chem. C. 118 (18) (2014) 9336–9345

4.) T.N.D. Tibbits, P. Beutel, M. Grave, C. Karcher, E. Oliva, G. Siefer, A. Wekkeli, M. Schachtner, F. Dimroth, A.W. Bett, R. Krause, Matteo Piccin, N. Blanc, M. Munoz-Rico, C. Arena, E. Guiot, C. Charles-Alfred, C. Drazek, F. Janin, L. Farrugia, B. Hoarau, J. Wasselin, A. Tauzin, T. Signamarcheix, T. Hannappel, K. Schwarzburg, A. Dobrich;
New efficiency frontiers with wafer-bonded multi-junction solar cells
29th European PV Solar Energy Conference and Exhibition, 22-26 September 2014, Amsterdam, The Netherlands

5.) P. Sippel, O. Supplie, M. M. May, R. Eichberger, and T. Hannappel;
Electronic structures of GaP(100) surface reconstructions probed with two-photon photoemission spectroscopy

Physical Review B 89(2014) 165312, doi:10.1103/PhysRevB.89.165312

6.) O. Supplie, M. M. May, H. Stange, C. Höhn, H.-J. Lewerenz, and T. Hannappel
Materials for light-induced water splitting: In situ controlled surface preparation of GaPN epilayers grown lattice-matched on Si(100)
Journal of Applied Physics 115 (2014) 113509

7.) F. Dimroth, M. Grave, P. Beutel, U. Fiedeler, C. Karcher, T. N. D. Tibbits, E. Oliva, G. Siefer, M. Schachtner, A. Wekkeli, A. W. Bett, R. Krause, M. Piccin, N. Planc, C. Drazek, E. Guiot, B. Ghyselen, T. Salvetat, A. Tauzin, T. Signamarcheix, A. Dobrich, T. Hannappel, K. Schwarzburg;
Wafer bonded four-junction GaInP/GaAs/GaInAsP/GaInAs concentrator solar cells with 44.7% efficiency 
Progress in Photovoltaics: Research and Applications 22 (2014) 277

8.) F. Dimroth, T. Roesener, S. Essig, C. Weuffen, A. Wekkeli, E. Oliva, G. Siefer, K. Volz, T. Hannappel, D. Haussler, W. Jäger, A.W. Bett;
Comparison of Direct Growth and Wafer Bonding for the Fabrication of GaInP/GaAs Dual-Junction Solar Cells on Silicon
IEEE JOURNAL OF PHOTOVOLTAICS 4, Issue: 2 (2014) 620-625

9.)  O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil, Y. Yamamoto, M.A. Schubert, A. Trampert, B. Tillack, W.T. Masselink, T. Hannappel, T. Schroeder; 
Lattice-engineered Si1-xGex-buffer on Si(001) for GaP integration 
J. Appl. Phys. 115 (2014) 103501 

10.) P. Sippel, K. Schwarzburg, M. Borgwardt, M. Elagin, S. Heitz, M.P. Semtsiv, W.T. Masselink, T. Hannappel, R. Eichberger;
Dynamics and two photon intersubband absorption of photovoltaic quantum structures
IEEE 40th Photovoltaic Specialists Conference (PVSC) (2014) 3254-7 

11.) O. Supplie, S. Bruckner, O. Romanyuk, M.M. May, H. Doscher, P. Kleinschmidt, H. Stange, A. Dobrich, C. Hohn, H.-J. Lewerenz, F. Grosse, T. Hannappel;
An experimental-theoretical atomic-scale study - in situ analysis of III-V on Si(100) growth for hybrid solar cells
IEEE 40th Photovoltaic Specialists Conference (PVSC) 
(2014) 2797-9 

2013

1.) S. Brückner, P. Kleinschmidt, O. Supplie, H. Döscher, T. Hannappel;
Domain-sensitive in situ observation of layer-by-layer removal at Si(100) in H2 ambient
New Journal of Physics 15 (2013) 113049

2.) T. Hannappel, M. M. May, H.-J. Lewerenz;
Photoelectrochemical Water Splitting: Issues and Perspectives chapter Epitaxial III-V Thin Film Absorbers: Preparation, Efficient InP Photocathodes and Routes to High Efficiency Tandem Structures
Cambridge: Royal Society of Chemistry, Energy and Environment Series, ISBN 978-1-84973-647-3

3.) M.M. May, O. Supplie, C. Höhn, R. van de Krol, H.-J. Lewerenz, T. Hannappel;
The interface of GaP(100) and H2O studied by photoemission and reflection anisotropy spectroscopy
New Journal of Physics 15 (2013) 103003

4.) S. Korte, M. Steidl, W. Prost, V. Cherepanov, B. Voigtländer, W. Zhao, P. Kleinschmidt, T. Hannappel;
Resistance and Dopant Profiling along Freestanding GaAs Nanowires
Appl. Phys. Lett. 103 (2013) 143104

5.) O. Romanyuk, T. Hannappel, F. Grosse;
Atomic and electronic structure of GaP/Si(111), GaP/Si(110), and GaP/Si(113) interfaces and superlattices studied by density functional theory
Physical Review B 88 (2013) 115312

6.) C. Strothkämper, A.F. Bartelt, P. Sippel, T. Hannappel, R. Schütz, R. Eichberger;
Delayed Electron Transfer through Interface States in Hybrid ZnO/Organic-Dye Nano-Structures
Journal of Physical Chemistry C 117 (2013) 17901

7.) M. M. May, O. Supplie, C. Höhn, W.-D. Zabka, H.-J. Lewerenz, R. van de Krol, T. Hannappel;
Water-induced modications of GaP(100) and InP(100)surfaces studied by photoelectron spectroscopy and reflection anisotropy spectroscopy

Solar Hydrogen and Nanotechnology VIII, edited by Yosuke Kanai, David Prendergast, Proc. of SPIE Vol. 88220M-1

8.) P. Sippel, W. Albrecht, D. Mitoraj, R. Eichberger, T. Hannappel, D. Vanmaekelbergh;
Two-photon photoemission study of competing auger and surface-mediated relaxation of hot electrons in CdSe quantum dot solids

Nano Letters 13 (2013) 1655

9.) S. Brückner, H. Döscher, P. Kleinschmidt, O. Supplie, A. Dobrich, T. Hannappel;
Verfahren zur Oberflächenpräparation von Si(100)-Substraten
EU patent application, no. 12008516.2 – 1362

10.) E. Barrigón, S. Brückner, O. Supplie, P. Kleinschmidt, I. Rey-Stolle, T. Hannappel;
Optical in situ monitoring of hydrogen desorption from Ge(100) surfaces
Applied Physics Letters 102 (2013) 111608

11.) E. Barrigón, S. Brückner, O. Supplie, H. Döscher, I. Rey-Stolle, T. Hannappel;
In situ study of Ge(100) surfaces with tertiarybutylphosphine supply in vapor phase epitaxy ambient
Journal of Crystal Growth 350 (2013) 173

12.) A.G. Munoz, C. Heine, M. Lublow, H.W. Klemm, N. Szabo, T. Hannappel and H.J. Lewerenz;
Photoelectrochemical Conditioning of MOVPE p-InP Films for Light-Induced Hydrogen Evolution: Chemical, Electronic and Optical Properties
ECS Journal of Solid State Science and Technology 2(4) (2013) Q51-Q58

13.) O. Supplie, H. Döscher, M.M. May, T. Hannappel;
Heteroepitaxial III-V on Si(100) tandem absorbers structures for photoelectrolysis
AIP Conf. Proc. 1568 (2013) 20

14.) S. Brückner, P. Kleinschmidt, O. Supplie, H. Döscher, T. Hannappel;
In situ control of step formation on Si(100) surfaces during MOVPE preparation for III-V-on-Si solar cells
Photovoltaic Specialists Conference (PVSC) (2013) 0886-0890


2012

1.) S. Brückner, H. Döscher, P. Kleinschmidt, O. Supplie, A. Dobrich, T. Hannappel;
Anomalous double-layer step formation on Si(100) in hydrogen process ambient
Physical Review B 86 (2012) 195310

2.) R. Eichberger, C. Strothkämper, I. Thomas, T. Hannappel, K. Schwarzburg, C. Fasting, A. Bartelt, R. Schütz;
Charge separation dynamics at inorganic/organic nanostructured hybrid photovoltaic interfaces
Journal of Photonics for Energy 2 (2012)  021003

3.) H. Doescher, O. Supplie, M. M. May, P. Sippel, C. Heine, A. G. Muñoz, R. Eichberger, H.-J. Lewerenz, T. Hannappel;
Epitaxial III-V Films and Surfaces for Photoelectrocatalysis
ChemPhysChem, 13 12 (2012) 2899-2909

4.) O. Supplie, T. Hannappel, M. Pristovsek, H. Döscher;
In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces
Physical Review B 86  3 (2012) 035308

5.) S. Brückner, E. Barrigón, O. Supplie, P. Kleinschmidt, A. Dobrich, C. Löbbel, I. Rey-Stolle, H. Döscher, T. Hannappel;
Ge(100) surfaces prepared in vapor phase epitaxy process ambient
Physica Status Solidi (RRL) – Rapid Research Letters 6 (2012) 178–180

6.) S. Brückner, O. Supplie, E. Barrigón, J. Luczak, P. Kleinschmidt, I. Rey-Stolle, H. Döscher, and T. Hannappel;
In situ control of As dimer orientation on Ge(100) surfaces
Applied Physics Letters 101 (2012)121602–121602–4

7.) S. Brückner, O. Supplie, E. Barrigón, A. Dobrich, J. Luczak, C. Löbbel, I. Rey-Stolle, P. Kleinschmidt, H. Döscher, and T. Hannappel;
In situ control of Si(100) and Ge(100) surface preparation for the heteroepitaxy of III-V solar cell architectures
AIP Conference Proceedings 1477 (2012) 32–35

8.) A. Braun, E. A. Katz, K. Schwarzburg, T. Hannappel, et al.;
Irradiance-dependent current-limiting behavior of multijunction solar cells
38TH IEEE Photovoltaics Specialists Conference (PVSC), Austin (2012),
ISSN: 0160-8371, 1246-1249

9.) B. Borkenhagen, H. Döscher, T. Hannappel, G. Lilienkamp, W. Daum;
Non-destructive, large-scale imaging of anti-phase disorder in GaP epilayers on Si(001) using low-energy electron microscop
ECS Transactions 45 (2012) 231


2011

1.) A. Dobrich, P. Kleinschmidt, H. Döscher, T. Hannappel;
Quantitative investigation of hydrogen bonds on Si(100) surfaces prepared by vapor phase epitaxy
Journal of Vacuum Science & Technology 29 (2011) 04D114-1

2.) A. Braun, N. Szabó, K. Schwarzburg, T. Hannappel, E. A. Katz, J. M. Gordon;
Current-limiting behavior in multijunction solar cells 

Applied Physics Letters 98
(2011) 223506

3.) S. Brückner, H. Döscher, P. Kleinschmidt, T. Hannappel;
In situ investigation of hydrogen interacting with Si(100)

Applied Physics Letters 98
 (2011) 211909

4.) H. Döscher, B. Borkenhagen, G. Lilienkamp, W. Daum, T. Hannappel;
III-V on Silicon: Observation of Anti-Phase Domains by Low Energy Electron Microscopy

Surface Science Letters 605
 (2011) L38

5.) P. Kleinschmidt, H. Döscher, P. Vogt, T. Hannappel;
Direct observation of dimer flipping at the H-stabilized GaP(100) and InP(100) surfaces
Physical Review B 83 (2011) 155316

6.) A. Neubauer, J.M. Szarko, A.F. Bartelt, R. Eichberger, T. Hannappel;
A photophysical study of perylene/TiO2 and perylene/ZnO varying interfacial couplings and the chemical environment

Journal of Physical Chemistry C: Nanomaterials and Interfaces 115
(2011) 5683

7.) H. Döscher, S. Brückner, T. Hannappel;
Investigation of oxide removal from Si(100) substrates in dependence of the process gas ambient

Journal of Crystal Growth 318
(2011) 563

8.) H. Döscher, K. Möller, T. Hannappel;
GaP(100) and InP(100) surface structures during preparation in a nitrogen ambient

Journal of Crystal Growth 318
(2011) 372

9.) H. Döscher, S. Brückner, A. Dobrich, C. Höhn, P. Kleinschmidt, T. Hannappel;
Surface preparation of Si(100) by thermal oxide removal in a chemical vapor environment

Journal of Crystal Growth 315
(2011) 10

10.) H. Döscher, T. Hannappel, O. Supplie, S. Brückner, A. Beyer, K. Volz;
Indirect in situ characterization of Si(100) substrates at the initial stage of III-V heteroepitaxy
Journal of Crystal Growth 315 (2011) 16

11.) A.G. Munoz, C. Heine, H.W. Klemm, T. Hannappel, N. Szabo and H.J. Lewerenz;
Electrochemical passivation of homoepitaxial InP(100) thin films for light induced hydrogen evolution: a synchrotron radiation photoelectron spectroscopy study
ECS Transactions 35 (8) 141-150 (2011)

12.) S. Brueckner, O. Supplie, E. Barrigon, P. Kleinschmidt, A. Dobrich, I. Rey-Stolle, C. Algora, H. Döscher, T. Hannappel;
Si(100) Versus Ge(100): Watching the interface formation for the Growth of III-V-Based Solar Cells on Abundant Substrates
Proc. 37th IEEE Photovoltaic Specialists Conference, Seattle (19.-24.06.2011)

13.) K. Schwarzburg, N. Szabo, A. Dobrich, T. Hannappel;
Time and Spatially Resolved Measurement of Interface and Bulk Recombination of Low Band Gap Solar Cell Material
Proc. 37th IEEE Photovoltaic Specialists Conference, Seattle (19.-24.06.2011)


2010

1.) J. Tornow, K. Schwarzburg, A. Belaidi, T. Dittrich, M. Kunst, T. Hannappel;
Charge separation and Recombination in radial ZnO/In2S3/CuSCN heterojunction structures

Journal of Applied Physics 108
(2010) 044915

2.) J. Wolters, A. W. Schell, G. Kewes, N. Nüsse, M. Schoengen, H. Döscher, T. Hannappel, B. Löchel, M. Barth, O. Benson;
Enhancement of the zero phonon line emission from a single NV-center in a nanodiamond via coupling to a photonic crystal cavity

Applied Physics Letters 97
(2010) 141108

3.) U. Seidel, H. Döscher, C. Lehmann, C. Pettenkofer, T. Hannappel;
Photoemission spectroscopy at MOVPE-prepared InGaAs(100) surface reconstructions
Surface Science 604 (2010) 2012

4.) H. Döscher, P. Kleinschmidt, T. Hannappel;
Atomic surface structure of Si(100) substrates prepared in a chemical vapor environment

Applied Surface Science 257
(2010) 574

5.) H. J. Lewerenz, C. Heine, K. Skorupska, N. Szabo, T. Hannappel, T. Vo-Dinh, S. A. Campbell, H. W. Klemm, A. G. Muñoz;
Photoelectrocatalysis: principles, nanoemitter applications and routes to bio-inspired systems
Energy & Environmental Science 3 (2010) 748

6.) B.E. Sagol, T. Hannappel;
Weltrekordsolarzellen in terrestrischem Einsatz
Praxis der Naturwissenschaften - Chemie in der Schule 2/59 (2010) 15

7.) T. F. Schulze, H. N. Beushausen, C. Leendertz, A. Dobrich, T. Hannappel, L. Korte, B. Rech;
Impact of a-Si:H structural properties on the annealing behavior of a-Si:H/c-Si heterostructures used as precursors for high-efficiency solar cells

Defects in Inorganic Photovoltaic Materials, Symp. Proc. No.
1268 (Mat. Res. Soc, Pittsburgh, 2010)

8.) R. Eichberger, R. Schütz, A. Neubauer, T. Hannappel, A. Bartelt;
Interfacial Dynamics of Perylene Derivatives Attached to Metal Oxide Particle and Nanorod Films
Mat. Res. Soc. Symp. Proc. (2010), DOI: 10.1557/PROC-1270-HH15-05

9.) T. Roesener, V. Klinger, A. Wekkeli, A.W. Bett, H. Döscher, S. Brückner, P. Kleinschmidt, C. Jurecka, J. Ohlmann, A. Beyer, K. Volz, W. Stolz, T. Hannappel, F. Dimroth;
MOVPE Growth of III-V Solar Cells on Silicon in a 300 mm Closed Coupled Showerhead Reactor

25th IEEE EUPVSEC 25th European Photovoltaic Solar Energy Conference and Exhibition/5th World Conference on Photovoltaic Energy Conversion, 6-10 
September 2010, Valencia, Spain, 964

10.) H. J. Lewerenz, H. W. Klemm, C..Heine, N. Szabo, T. Hannappel, A. G. Munoz;
Herstellungsverfahren für einen lichtempfindlichen Dünnschichtaufbau für die katalytische Wasserstoffentwicklung und Verwendung davon

Patentanmeldung (2010)
DE 10 2010 012 968.2, anhängig 

11.) H. Döscher, G. Lilienkamp, P. Iskra, W. Daum, G. Helsch, S. Becker, R.J. Wrobel, H. Weiss,Y.  Suchorski ;
High-quality ZrO2/Si(001) thin films by a sol-gel process: Preparation and characterization

J. Appl. Phys. 107 (2010) 094103 

12.) N. Szabó, K. Schwarzburg, T. Hannappel;
Messvorschrift und Aufbau zur Bestimmung der Effizienz von Mehrfachsolarzellen unter beliebiegen spektralen Einstrahlbedingungen

Patentanmeldung 
(2010), HZB 10 08, anhängig

13.) H. Döscher, G. Lilienkamp, P. Iskra, M. Kazempoor, W. Daum; 
Thermal stability of thin ZrO(2) films prepared by a sol-gel process on Si(001) substrates
J. Vac. Sci. Techn. B28 (2010) C5B5-C5B11  

14.) T. Haensel, A. Comouth, N. Zydziak, E. Bosch, A. Kauffmann, J. Pfitzer, S. Krischok, J.A. Schaefer, S. I.-U. Ahmed;
Pyrolysis of wood-based polymer compound
J. Anal. Appl. Pyrolysis 87 (2010) 124

15.) T. Haensel, S. I.-U. Ahmed, J. Uhlig, R. J. Koch, J. A. Garrido, M. Stutzmann, J.A. Schaefer;
Interaction of hydrogen and oxygen with nanocrystalline diamond surfaces

Mater. Res. Soc. Symp. Proc. 1203 (2010) J17-44

16.) P. Lorenz, R. Gutt, T. Haensel, M. Himmerlich, J. A. Schaefer, S. Krischok;
Interaction of GaN(0001)-2x2 surfaces with H2O
Phys. Status Solidi C7(2) (2010) 169

17.) K. Kloeckner, M. Himmerlich, R. J. Koch, V. M. Polyakov, A. Eisenhardt, T. Haensel, S.I.-U. Ahmed, S. Krischok, J. A. Schaefer;
Electron-phonon-plasmon interaction in MBEgrown indium nitride - A high resolution electron energy loss spectroscopy (HREELS) study
Phys. Status Solidi C 7(2) (2010) 173

18.) R. J. Koch, T. Haensel, S. I.-U. Ahmed, Th. Seyller, J. A. Schaefer;
HREELS study of graphene formed on hexagonal silicon carbide

Phys. Status Solidi C 7(2) (2010) 394

19.) P. Lorenz, T. Haensel, R. Gutt, R. J. Koch, J. A. Schaefer and S. Krischok;
Analysis of polar GaN surfaces with photoelectron and high resolution electron energy loss spectroscopy

Phys. Status Solidi B 247(7) (2010) 1658

20.) S. Ghodbane, T. Haensel, Y. Coffinier, S. Szunerits, D. Steinm¨uller-Nethl, R. Boukherroub, S. I.-U. Ahmed, J. A. Schaefer;
HREELS investigation of the surface of nanocrystalline diamond films oxidized by different processes
Langmuir 26(24) (2010) 18798

21.) H. Döscher and T. Hannappel;
In situ reflection anisotropy spectroscopy analysis of heteroepitaxial GaP films grown on Si (100)
Journal of Applied Physics 107 (2010) 123523

22.) H. Döscher, A. Dobrich, S. Brückner, P. Kleinschmidt, and T. Hannappel;
Si(100) surfaces in a hydrogen-based process ambient

Applied Physics Letters 97
(2010) 151905

23.) H. Döscher, B. Kunert, A. Beyer, O. Supplie, K. Volz, W. Stolz, and T. Hannappel;
In situ anti phase domain quantification applied on heteroepitaxial GaP growth on Si(100)
Journal of Vacuum Science & Technology B 28 [4] (2010) C5H1


2009 und älter

1.) B.E. Sagol, N. Szabo, H. Doescher, U. Seidel, C. Hohn, K. Schwarzburg, T. Hannappel;
Lifetime and performance of InGaAsP and In GaAs absorbers for low bandgap tandem solar cells
Book Group Author(s): IEEE Source: 2009 34TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE, Philadelphia, PA Date: JUN 07-12, 2009, VOLS 1-3  Book Series: IEEE Photovoltaic Specialists Conference, (2009) 2021-2024   

2.) H. Döscher, T. Hannappel;
Messverfahren zur optischen in-situ Quantifizierung von Anti-Phasen-Domänen und Anwendung des Messverfahrens

Patent_
DE 10 2009 051 765 A1 2011.06.01

3.) A. Bartelt, R. Schütz, A. Neubauer, T. Hannappel, R. Eichberger;
Influence of TiO2-perylene interface modifications on electron injection and recombination dynamics

J. Phys. Chem. C: Nanomaterials and Interfaces 113
(2009) 21233

4.) T. Haensel, J. Uhlig, R. J. Koch, S. I.-U. Ahmed, J. A. Garrido, D. Steinmüller-Nethl, M. Stutzmann, J. A. Schaefer;
Influence of hydrogen on nanocrystalline diamond surfaces investigated with HREELS and XPS

Phys. Status Solidi A 206 (2009) 2022

5.) T. Haensel, A. Comouth, P. Lorenz, S. I.-U. Ahmed, S. Krischok, N. Zydziak, A. Kauffmann, J. A. Schaefer;
Pyrolysis of cellulose and lignin
Applied Surface Science 255 (2009) 8183

6.) J. Szarko, A. Neubauer, A. Bartelt, L. Socaciu-Siebert, F. Birkner, K. Schwarzburg, T. Hannappel, R. Eichberger;
The Ultrafast Temporal and Spectral Characterization of Electron Injection from Perylene Derivatives into ZnO and TiO2 Colloidal Films

J. Phys. Chem. C: Nanomaterials and Interfaces 112
(2008) 10542

7.) H. Döscher,  T. Hannappel, B. Kunert, A. Beyer, K. Volz, W. Stolz;
In-situ verification of single-domain III-V on Si(100) growth via metal organic vapor phase epitaxy

Appl. Phys. Lett. 93
(2008) 172110

8.) N. Szabo, B.E. Sagol, U. Seidel, K. Schwarzburg, T. Hannappel;
InGaAsP/InGaAs tandem cells for a solar cell configuration with more than three junctions

Phys. stat. sol. (RRL) 2
(2008) 254

9.) U. Seidel, B.E. Sagol, C. Pettenkofer, T. Hannappel;
Electronic surface states on MOVPE-prepared InGa-terminated InGaAs(100) (4x2)/c(8x2) surface

Appl. Surf. Sci. 255 (3)
(2008) 722

10.) U. Seidel, B.E. Sagol, B. Szabo, K. Schwarzburg, T. Hannappel;
InGaAs/GaAsSb –interface studies in a tunnel junction of a low band gap tandem solar cell

Thin Sol. Films 516
(2008) 6723

11.) U. Seidel, T. Hannappel;
MOVPE preparation of InGaAs( 00) surface reconstructions employing transient in-situ RDS

J. Cryst. Growth 310
(2008) 2334

12.) B.E. Sağol, N. Szabó, H. Döscher, U. Seidel, C. Höhn, K. Schwarzburg, T. Hannappel;
Lifetime and performance of InGaAsP and InGaAs absorbers for low band gap tandem solar cells

Proc. 34th IEEE
Photovoltaic Specialists Conference, Philadelphia (2009), ISBN: 978-1-4244-2950-9, ISSN: 0160-8371, 1090-93

13.) T. Hannappel, M. Lux-Steiner;
Nanotechnologie für eine nachhaltige Energieversorgung

Forschungsagenda BMBF, BMU, BMWi, FVS; ISSN 0949-1082, 1-48 (2008)

14.) T. Hannappel, B.E. Sağol, U. Seidel, N. Szabó, K. Schwarzburg, G.J. Bauhuis, P. Mulder;
Measurement of an InGaAsP/InGaAs tandem solar cell under GaAs
Proc. 33rd IEEE PVSC, San Diego (2008)
1-3

15.) J. Szarko, L. Socaciu-Siebert, A. Neubauer, T. Hannappel, R. Eichberger;
Electron relaxation dynamics at the In-rich (100) surface of InP

Ultrafast phenomena in semiconductors and nanostructure materials XII, Book series: Proc. Soc. Photo-Opt. Instr. Engineers (SPIE) 6892
(2008) M8921

16.) B.E. Sagol, U. Seidel, N. Szabo, C. Höhn, H. Döscher, K. Schwarzburg, T. Hannappel, G.J. Bauhuis, P. Mulder;
Performance of InGaAsP/InGaAs tandem solar cells under GaAs

Proc. 23rd  
Europ. Photov. Sol. Energy Conf., Valencia (2008) 816

17.) T. Bork, W.E. McMahon, J.M. Olson, T. Hannappel;
Surface science studies including low temperature RDS on MOCVD-prepared, As-terminated Si(100) surfaces

J. Cryst. Growth 298
(2007) 54

18.) T. Hannappel, C. Königstein, G. Calzaferri;
Editorial: “Transformation and storage of solar energy”

Chimia 61
(2007) 768

19.) B. E. Sagol, U. Seidel, N. Szabo, K. Schwarzburg, T. Hannappel;
Basic concepts and interfacial aspects of high-efficiency III-V multijunction solar cells

Chimia 61
(2007) 775

20.) U. Seidel, H.-J. Schimper, Z. Kollonitsch, K. Möller, K. Schwarzburg, T. Hannappel;
Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell
J. Cryst. Growth 298 (2007) 777

21.) B.E. Sagol, U. Seidel, N. Szabó, C. Höhn, K. Schwarzburg, T. Hannappel;
Progress in the development of an InGaAsP/InGaAs tandem solar cell
Proc. Europ. PVSEC, Milan (2007) 524

22.) T. Letzig, H.-J. Schimper, T. Hannappel, F. Willig;
P-H bonds in the surface unit cell of P-rich ordered InP(001) grown by metalorganic chemical vapor deposition

Phys. Rev. B75
(2007) 039903

23.) T. Haensel, A. Comouth, N. Zydziak, E. Bosch, C. Huebner, C. Ruf, A. Kauffmann, J. Pfizer, R. Staneva, P. Denner, S. I.-U. Ahmed, S. Krischok, J. A. Schaefer;
ArboPyr: Material und Verfahrensanalyse zur Erzeugung von Kohlenstoffstrukturen in naturfasergefüllten Polymeren für den Einsatz in der Brennstoffzellentechnik Netzwerke Grundlagenforschung erneuerbare Energien und rationelle Energieanwendung
Energietechnik 66 (2007), 121

24.) W.E. McMahon, Iskander G. Batyrev, T. Hannappel, J.M. Olson, S.B. Zhang;
5-7-5 line defects on As/Si(100): A general stress-relief mechanism for V/IV surfaces

Phys. Rev. B74 (2006) 033304

25.) H.-J. Schimper, Z. Kollonitsch, K. Möller, U. Seidel, U. Bloeck, K. Schwarzburg, F. Willig, T. Hannappel;
Material studies regarding InP-based high-efficiency solar cells
J. Cryst. Growth 287 (2006) 642

26.) Z. Kollonitsch, H.-J. Schimper, U. Seidel, F. Willig, T. Hannappel;
In-situ monitoring and benchmarking in UHV of differently reconstructed InP/GaAsSb interfaces
Appl. Surf. Sci. 252 (2006) 4033

27.) R. Ernstorfer, S. Kubala, T. Hannappel, F. Willig;
Vorrichtung und Verfahren zur nasschemischen Präparation von hochreinen Festkörperoberflächen
German Patent, Nr. DE102004014430 A1

28.) Z. Kollonitsch, H.-J. Schimper, U. Seidel, K. Möller, S. Neumann, F.-J. Tegude, F. Willig, T. Hannappel;
Improved structure and performance of the GaAsSb/InP interface in a resonant tunneling diode
J. Cryst. Growth 287 (2006) 536

29.) U. Seidel, H.-J. Schimper, E. Sagol, U. Bloeck, K. Schwarzburg, T. Hannappel;
InGaAs/GaAsSb tunnel junction employed in a low band gap tandem solar cell

Proc.
21st Europ. PV Sol. Energy Conf. (2006) 426

30.) T. Hannappel;
InP(100)-based interfaces for photovoltaics prepared via metal organic chemical vapor deposition

Habilitationsschrift, Freie Universität Berlin (2005)         

31.) L. Töben, L. Gundlach, R. Ernstorfer, R. Eichberger, T. Hannappel, F. Willig A. Zeiser, J. Förstner, A. Knorr, P. Hahn, W.G. Schmidt ;
Femtosecond transfer dynamics of photo-generated electrons at a surface resonance of reconstructed InP(100)
Phys. Rev. Lett. 94 (2005) 067601

32.) K. Möller, L. Töben, Z. Kollonitsch, Ch. Giesen, M. Heuken, F. Willig, T. Hannappel;
In-situ monitoring and analysis of GaSb(100) substrate deoxidation
Applied Surf. Sci. 242 (2005) 392

33.) T. Letzig, H.-J. Schimper, T. Hannappel, F. Willig;
P-H bonds in the FTIR spectrum of the genuine MOCVD-grown ordered P-rich InP(100)
Surface Phys. Rev. B  71 (2005) 033308

34.) T. Hannappel, W.E. McMahon, J.M. Olson;
An RDS, LEED, and STM study of MOCVD-prepared Si(100) surfaces
J. Cryst. Growth 272
(2004) 24

33.) Z. Kollonitsch, K. Möller, F. Willig, T.
Hannappel;
Reconstructions of MOVPE-prepared group-V-rich GaAsSb(100) surfaces
J. Cryst. Growth 272 (2004) 694

35.) T. Hannappel, S. Visbeck, L. Töben, F. Willig;
Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques
Rev. Sci. Instr. 75 (2004) 1297

36.) J. Geisz, J.M. Olson, W.E. McMahon, T.
Hannappel, K. Jones, H. Moutinho, M.M. Al-Jassim;
Growth and characterization of GaPNAs on Si

Mat. Res. Soc. Symp. Proc. 799 (2004) 27

37.) Z. Kollonitsch, K. Möller, H.-J. Schimper, Ch. Giesen, M. Heuken, F. Willig, T. Hannappel;
In situ monitored MOVPE growth of undoped and p-doped GaSb(100)
J. Cryst. Growth 261 (2004) 289

38.) L. Töben, L. Gundlach, T.
Hannappel, R. Ernstorfer, R. Eichberger, F. Willig;
Dynamics of electron scattering between bulk states and the C1 surface state of InP(100)
Appl. Phys. A78
(2004) 239

39.) Ch. Giesen, M. Heuken, F. Dimroth, A. W. Bett, M. Seip, J. Koch, A. Greiling, Z. Kollonitsch, K. Möller, T. Hannappel;
Growth of Sb-based semiconductors in a 9×2-inch planetary MOVPE reactor
American Institute of Physics Conf. Proc. 738 (2004) 267

40.) L. Töben, T. Hannappel, R. Eichberger, K. Möller, L. Gundlach, R. Ernstorfer, F. Willig;
Two-photon photoemission as a probe of unoccupied and occupied surface states of InP(100)
J. Cryst. Growth 248 (2003) 206

41.) K. Möller, Z. Kollonitsch, Ch. Giesen, M. Heuken, F. Willig, T. Hannappel;
Optical in-situ monitoring of MOVPE GaSb(100) film growth
J. Cryst. Growth 248 (2003) 244

42.) T. Hannappel, L. Töben, K.  Moller, L.  Gundlach, R.  Ernstorfer, R. Eichberger, F.  Willig;
Energetics and fs-dynamics at (100) surfaces of MOCVD-grown III-V semiconductors
Proc.
InP Rel. Mat. Conf. (2002) 99

43.) S. Visbeck, T. Hannappel, M. Zorn, J.-T. Zettler, F. Willig;
Temperature dependence and origin of InP(100) reflectance anisotropy down to 20 K
Phys.
Rev. 63 (2001) 245303

44.) T. Hannappel , L. Töben, S. Visbeck, K. Möller, F. Willig;
In-situ monitoring of InP(100) and GaP(100) interfaces and characterization with RDS at 20 K
J. Electr. Mat. 30 (2001) 1425

45.) L. Töben, T.
Hannappel , K. Möller, H.-J. Crawack, C. Pettenkofer, F. Willig;
RDS, LEED and STM of the P-rich and Ga-rich surfaces of GaP(100)
Surf. Sci.
494 (2001) L755

46.) T. Hannappel , L. Töben, S. Visbeck, H.-J. Crawack, C. Pettenkofer, F. Willig;
UPS and 20 K RAS of the P-rich and In-rich surfaces of InP(100)
Surf. Sci. 470 (2000) L1

47.) P. Vogt, T. Hannappel, A.M. Frisch, S. Visbeck, F. Willig, Ch. Jung, W. Braun, W. Richter, N. Esser;
Atomic structure and composition of the P-rich InP(100) surfaces
Appl. Surf. Sci. 166
(2000) 190

48.) W.G. Schmidt, N. Esser, A. M. Frisch, P. Vogt, J. Bernholc, F. Bechstedt, M. Zorn, T.
Hannappel, S. Visbeck, F. Willig, W. Richter;
Understanding reflectance anisotropy: Surface-state signatures and bulk-related features in the optical spectrum of InP(001) (2x4)
Phys. Rev. B61 (2000) R16335

49.) A.M. Frisch, P. Vogt, T. Hannappel, S. Visbeck, F. Willig, W. Braun, W.G. Schmidt, J. Bernholc, W. Richter, N. Esser;
Angle resolved photoemission spectroscopy of the InP(100) surface
Appl. Surf. Sci. 166
(2000) 224

50.) T. Hannappel,  S. Visbeck, M. Zorn, J.-T. Zettler, F. Willig;
Reflectance anisotropy spectra for the transition from the P-rich to the In-rich surface reconstruction of InP(100)
J. Cryst. Growth 221 (2000) 124

51.) B. Burfeindt, C. Zimmermann, S. Ramakrishna, T. Hannappel, B. Meissner, W. Storck, F. Willig;
Femtosecond electron transfer from the excited state of chemically anchored chromophores into the empty conduction band of nano-crystalline sponge-like TiO2 films
Z. Phys. Chem. 212 (1999) 67

52.) T. Hannappel, S. Visbeck, K. Knorr, J. Mahrt, M. Zorn, F. Willig;
Preparation of P‑rich InP‑surfaces via MOCVD and surface characterization in UHV
Appl. Phys. A69
(1999) 427

53.) T. Hannappel, S. Visbeck, K. Knorr, M. Zorn, F. Willig;
MOCVD-preparation and in-situ / UHV-analysis of InP-films
Mat. Res. Soc. Symp. Proc. 535 (1999) 207

54.) T. Hannappel, F. Willig;
Vorrichtung und Verfahren zum Überführen einer Probe aus einem Reaktionsgefäß in ein Ultrahochvakuum
Deutsches Patent (1999) DE 19837851

55.) N. Esser, W.G. Schmidt, J. Bernholc, A.M. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck;
GaP(001) and InP(001): Reflectance anisotropy and surface geometry
J. Vac. Sci. Technol. B 17 (1999) 1691

56.) P. Vogt, T. Hannappel, S. Visbeck, K. Knorr, N. Esser, W. Richter;
Atomic surface structure of the phosphorous-terminated InP(001) grown by MOVPE
Phys. Rev. B 60 (1999) R5117 

57.) P. Vogt, A.M. Frisch, T. Hannappel, S. Visbeck, Ch. Jung, N. Esser, W. Braun, W. Richter;
Atomic surface structure of MOVPE-grown InP(100)
Phys. stat. sol. (b) 215 (1999) 737

58.) T. Hannappel, C. Zimmermann, B. Meissner, B.  Burfeindt, W. Storck, F. Willig;
Reply to Comment on ‘Measurement of ultrafast photoinduced electron transfer from chemically anchored Ru-dye molecules into empty electronic states in a colloidal anatase TiO2 film
J. Phys. Chem. B. 102 (1998) 3651

59.) T. Hannappel, B. Burfeindt, W. Storck, F. Willig;
Measurement of ultrafast photoinduced electron transfer from chemically anchored Ru-dye molecules into empty electronic states in a colloidal anatase TiO2 film
J. Phys. Chem. B. 101 (1997) 6799

60.) B. Burfeindt, T. Hannappel, W. Storck, F. Willig;
Measurement of temperature-independent femtosecond interfacial electron transfer from an molecular electron donor to a semiconductor as acceptor
J. Phys. Chem. B 100 (1996) 16463