2D-Sens

Ultrasensitive energy efficient gas sensors made of 2D materials

Contact

PD Dr.- Ing. habil. Frank Schwierz

FG Micro- and Nanoelectronic Systems Phone: +49 3677 69 3120

Visiting address: Helmholtzplatz 2, 98693 Ilmenau, Germany

Funding information

Funding source: Europäischer Sozialfond für Deutschland - Kofinanziert von der EU

Project executing agency:  TAB / The 2D-Sens research group is funded by the Free State of Thuringia from the European Social Fund.

Duration:  01.04.2019 - 31.03.2022

Project partner

 

Micro- and Nanoelectronic Systems Group

Nanotechnology Group

Group of Materials in Electrical Engineering and Electronics

FSU Jena / Institute for Applied Physics

Industry Advisory Board:

avateramedical Mechatronics GmbH, Ilmenau5microns GmbH, IlmenauJENA-GEOS®-Ingenieurbüro GmbH, JenaKompass - Pioneering Sensor Solutions GmbH, IlmenauMelexis Microelectronic Integrated Systems, ErfurtX-FAB Semiconductor Foundries AG, Erfurt

Contents and goals

2D materials consist almost exclusively of surfaces and therefore interact extremely strongly with their environment. This makes them ideal for nanoscale and quantum-sensitive applications. Due to their strong interaction between light and matter, it is equally possible to read their status even from a distance.

Other properties of TMDs that are of particular interest for 2D sensing include:

  • Strong interaction with gases already at room temperature,
  • Possibility of realizing controllable emitters for quantum light,
  • Extremely strong optical nonlinearities.
 

The aim of 2D-Sens is to exploit the properties of transition metal dichalcogenides (TMDs) specifically for gas sensors and to design, fabricate and characterize four types of innovative TMD-based gas sensors.

Workshops

Publications

  1. T. Bucher, A. Vaskin, R. Mupparapu, F. Löchner, A. George, K. Chong, S. Fasold, C. Neumann, D.-Y. Choi, F. Eilenberger, F. Setzpfandt, Y. S. Kivshar, T. Pertsch, A. Turchanin, I. Staude, Tailoring photoluminescence from MoS2 monolayers by Mie-resonant metasurfaces, ACS Photonics 6 (2019)1002–1009.
  2. F. J. F. Löchner, R. Mupparapu, M. Steinert, A. George, Z. Tang, A. Turchanin, T. Pertsch, I. Staude, F. Setzpfandt, Controlling second-harmonic diffraction by nano-patterning MoS2 monolayers, Optics Express 27 (2019) 35475-35484.
  3. T. Scheler, D. Flock, J. Pezoldt, F. Schwierz, and P. Schaaf, Structural and stoichiometric investigation of magnetron RF sputtered MoS2 and WS2 thin films, Euromat (2019).
  4. S. Shree, A. George, T. Lehnert, C. Neumann, M. Benelajla, C. Robert, X. Marie, K. Watanabe, T. Taniguchi, U. Kaiser, B. Urbaszek, A. Turchanin,High optical quality of MoS2 monolayers grown by chemical vapor deposition, 2D Materials 7 (2020) 015011.
  5. F. Trillitzsch, A. Janas, A. Özogul, C. Neumann, A. George, B. R. Jany, F. Krok, A. Turchanin, E. Gnecco, Scanning-probe-induced assembling of gold striations on mono- and bi-layered MoS2 on SiO2, MRS Advances(2020) DOI: 10.1557/adv.2020.151.
  6. I. Paradeisanos, S. Shree, A. George, N. Leisgang, C. Robert, K. Watanabe, T. Taniguchi, R. J. Warburton, A. Turchanin, X. Marie, I. Gerber, B. Urbaszek, Controlling interlayer excitons in MoS2 layers grown by chemical vapor deposition, Nature Communications 11 (2020) 2391.
  7. G. Q. Ngo, A. George, R. T. K. Schock, A. Tuniz, E. Najafidehaghani, Z. Gan, N. C. Geib, T. Bucher, H. Knopf, C. Neumann, T. Lühder, S. Warren-Smith, H. Ebendorff-Heidepriem, T. Pertsch, M. A. Schmidt, A. Turchanin, F. Eilenberger, Scalable functionalization of optical fibers using atomically thin semiconductors, Advanced Materials 32 (2020) 2003826.
  8. F. Eilenberger, A. George, M. Schmidt, and A. Turchanin, Anordnung und Verfahren zur effizienten nichtlinearen Lichtkonversion, Poster (2020).
  9. F. J. F. Löchner, A. George, K. Koshelev, T. Bucher, E. Najafidehaghani, A. Fedotova, D. Yong Choi, T. Pertsch, I. Staude, Y. Kivshar, A. Turchanin, F. Setzpfandt, Hybrid dielectric metasurfaces for enhancing second-harmonic generation in chemical vapor deposition grown MoS2 monolayers, ACS Photonics 8 (2021) 218-227.
  10. E. Najafidehaghani, Z. Gan, A. George, T. Lehnert, G. Q. Ngo, C. Neumann, T. Bucher, I. Staude, D. Kaiser, T. Vogl, U. Hübner, U. Kaiser, F. Eilenberger, A. Turchanin, One-dimensional p-n junction electronic and optoelectronic devices from transition metal dichalcogenide lateral heterostructures grown by one-pot chemical vapor deposition synthesis, Advanced Functional Materials 31 (2021)2101086.
  11. S. Thiele, I. A. Eliseyev, A. N. Smirnov, H. O. Jacobs, V. Y. Davydov, F. Schwierz, and J. Pezoldt, Electric bias-induced edge degradation of few-layer MoS2 devices, Materials Today: Proceedings, Under Review (2021).
  12. T. Scheler, D. Flock, H. Honig, M. Hopfeld, A. Knauer, T. Kups, H. Romanus, M. Sojkova, M. Vojs, P. Schaaf, Investigation of PVD grown MoS2 films for gas sensing applications, Thüringer Werkstofftag (2021).
  13. F. Schwierz and M. Ziegler, Six decades of research on 2D materials: Progress, dead ends, and new horizons, Invited Paper, Proc. LAEDC (2021).