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Prof. Ivo W. Rangelow


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Development of nano structures for electronic components and NEMS

Lithographic nano structures

Research activities at the Dept. of Microelectronic and Nanoelectronic Systems concentrate on the development of semi-conductor structures on nanometer scale. Nanoelectronic components are designed for industrial applications and basic research by using high-resolution lateral structuring methods.
Because of an atom distance of 0.2 nm in semi-conductor materials this means a structural width of about 15 atoms for the nanostructures developed at the department.

For example a single electron transistor (SET) based on "quantum islands" with a typical diameter of 1 to 2 nm has electrodes around 10 nm, which must be reproducibly manufacturable with a tolerance of 1 nm.



Positioning of nano clusters

I.W. Rangelow, J. Meijer and T. Schenkel, US Patent No: US7, 126, 139, B2, Oct.24, 2006

Nano particles show unusual physical, chemical and electronic attributes and behaviour. These are utilized to create novel nanoelectronic components and nano-systems. To realize such, a random distribution of nano particles is not sufficient, but rather an accurately defined arrangement. Very accurate positioning (below 1 nm) will make a variety of new nano approaches possible, e.g. quantum dot single electron transistors and quantum computers. Yet the necessary techniques and tools for that are not available.

Within the scope of the "Cluster-Jet" project by the Volkswagen foundation we propose a new method. It utilizes a particle (cluster) source or an ion source and a perforated AFM tip.

The perforated AFM tip is part of a self-actuated piezoresistive cantilever. The nano-sized aperture is used  to guide single charged particles and place (implant) them within a surface with nanometer accuracy.


Translation: B. Volland
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