Work Packages 3

Work package 3: III-V-free window/protective layer

This work package focuses on combining special semiconductor materials known as III-V semiconductors with protective layers. These layers should not contain indium (In), gallium (Ga) or arsenic (As) and should be both transparent and electrically compatible. Depending on the arrangement of the semiconductors, this integration will be carried out either flat or in a core-shell structure. For applications in the field of water splitting, a metal oxide layer will be applied. Processes such as atomic layer deposition or physical vapour deposition are available for this purpose. These coating processes must be adapted to create an optimal interface between the applied layer and the semiconductor in terms of both optical and electrical properties. The physical and chemical layer formation processes play a decisive role here. Collaboration with other work packages, in particular WP5, ensures that existing knowledge is applied to the specific challenges of III-V semiconductors in order to support the reduction and recycling of the critical elements used.