5.) S. Shekarabi, M.A. Zare Pour, H. Su, W. Zhang, C. He, K.D. Hanke, O. Romanyuk, A. Paszuk, W. Jaegermann, S. Hu, T. Hannappel;
Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces
ACS Applied Materials & Interfaces  17 (2025) 7087−7097

4.) M. Großmann, K.D. Hanke, C.Y. Bohlemann, A. Paszuk, T. Hannappel, W.G. Schmidt, E. Runge;
On the origin of bulk-related anisotropies in surface optical spectra
arXiv preprint arXiv:2503.11253 (2025)

3.) M.A. Zare Pour, S. Shekarabi, I.A. Ruiz Alvarado, J. Diederich, Y. Gao, A. Paszuk, D.C. Moritz, W.Jaegermann, D. Friedrich, R. van de Krol, W.G. Schmidt, T. Hannappel;
Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction
Advanced Functional Materials (2025) 2423702

2.) M.A. Zare Pour, M.N. Qaisrani, C. Höhn, JL Wolf, N. Mogharehabed, J. Velazquez Rojas, W. Jaegermann, E. Runge, R. van de Krol, T. Hannappel, C. Dreßler, A. Paszuk;
Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory
Advanced Functional Materials (2025) 2506105

1.) J. Diederich, A Paszuk, I.A. Ruiz Alvarado, M. Krenz, M.A. Zare Pour, D. Suresh Babu, J. Velazquez Rojas, C. Höhn, Y. Gao, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G.Schmidt, T. Hannappel, R. van de Krol, D. Friedrich;
Ultrafast Electron Dynamics at the Water‐Modified InP (100) Surface
Advanced Materials Interfaces (2025) e00463

7.) D. Ostheimer, C. Dreßler, M. Großmann, M.A. Zare Pour, S. Shekarabi, K.D. Hanke, J. Koch, A. Paszuk, E. Runge, T. Hannappel;
Water Vapor Interaction with Well-Ordered GaInP (100) Surfaces
The Journal of Physical Chemistry C 128 (46) (2024) 19559

6.) J. Diederich, J. Velazquez Rojas, A. Paszuk, M.A. Zare Pour, C. Höhn, I.A. Ruiz Alvarado, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van de Krol, D. Friedrich;
Ultrafast Electron Dynamics at the P-rich Indium Phosphide/TiO2 Interface
Advanced Functional Materials 34 (49) (2024) 2409455

5.) C.Y. Bohlemann, A. Flötotto, A. Paszuk, M. Nandy, M. Großmann, O. Romanyuk, K.D. Hanke, A. Gieß, P. Kleinschmidt, E. Runge, T. Hannappel;
Surface structure of MOVPE-prepared As-modified Si (100) substrates
Applied Surface Science 675 (2024) 160879

4.) T. Hannappel, S. Shekarabi, W. Jaegermann, E. Runge, J.P. Hofmann, R. van de Krol, M.M. May, A. Paszuk, F. Hess, A. Bergmann, A. Bund, C. Cierpka, C. Dreßler, F. Dionigi, D. Friedrich, M. Favaro, S. Krischok, M. Kurniawan, K. Lüdge, Y. Lei, B. Roldan Cuenya, P. Schaaf, R. Schmidt-Grund, W.G. Schmidt, P. Strasser, E. Unger, M.V. Montoya, D. Wang, H. Zhang;
Integration of multi-junctionabsorbersandcatalystsforefficient solar-drivenartificialleafstructures: a physicalandmaterialsscienceperspective
RRL Solar 8 (2024) 2301047; DOI: 10.1002/solr.202301047

3.) D.C. Moritz, W. Calvet, M.A. ZarePour, A. Paszuk, T. Mayer, T. Hannappel, J.P. Hofmann, W. Jaegermann;
(Photo-)electrochemicalreactions on semiconductorsurfaces A: Si surfaces–atomicand electronic structure
Encyclopediaof Solid-Liquid Interfaces (First Edition) (2024) 93-119, ISBN 9780323856706,
DOI: 10.1016/B978-0-323-85669-0.00130-6

2.) A. Hajduk, M.A. ZarePour, A. Paszuk, M. Guidat, M. Löw, F. Ullmann, D.C. Moritz, J.P. Hofmann, S. Krischok, E. Runge, W.G. Schmidt, W. Jaegermann, M.M. May, T. Hannappel;
(Photo-)electrochemicalreactions on semiconductorsurfaces, part B: III-V surfaces–atomicand electronic structure
Encyclopediaof Solid-Liquid Interfaces (First Edition) (2024) 120-156, ISBN 9780323856706,
DOI: 10.1016/B978-0-323-85669-0.00113-6

1.) J. Diederich, J. Velasquez Rojas, M.A. ZarePour, I.A. Ruiz Alvarado, A. Paszuk, R Sciotto, C. Höhn, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van de Krol, D. Friedrich;
UnravelingElectron Dynamics in p-type Indium Phosphide (100): A Time-ResolvedTwo-Photon Photoemission Study
Journal ofthe American Chemical Society 146 (2024) 8949; DOI: 10.1021/jacs.3c12487

4.) M. Nandy, A. Paszuk, K.D. Hanke, P. Kleinschmidt, T. Hannappel;Optical In Situ Studies ofGe(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE reactorsfor Low-Defect III-P GrowthACS Applied Electronic Materials 5 (2023) 1295; DOI: 10.1021/acsaelm.2c01775

3.) C. Maheu, M.A. ZarePour, I. Damestoy, D. Ostheimer, M. Mellin, D.C. Moritz, A. Paszuk, W. JaegermannT. Mayer, T. Hannappel, J.P. Hofmann;Tapered Cross SectionPhotoelectronSpectroscopyProvidesInsightsintotheBuried Interfaces of III-V Semiconductor DevicesAdvanced Materials Interfaces 10 (2023) 220164810DOI: 10.1002/admi.20220164

2.) D.C. Moritz, W. Calvet, M.A. ZarePour, A. Paszuk, T. Mayer, T. Hannappel, J.P. Hofmann, W. Jaegermann;Dangling Bond Defects on Si SurfacesandTheirConsequences on Energy Volume Diagrams: From a PhotoelectrochemicalPerspectiveSolar RRL 7 (2023), 2201063; DOI: 10.1002/solr.202201063

1.) S. Shekarabi, M.A. Pour, H. Su, W. Zhang, C. He, O. Romanyuk, A. Paszuk, S. Hu, T. Hannappel;Photoemissionstudyand band alignmentofGaNpassivationlayers on GaInPheterointerfacearXiv:2310.15212v1 [physics.app-ph], DOI: 10.48550/arXiv.2310.15212

6.) O. Romanyuk, A. Paszuk, I. GordeevR.G. Wilks, S. Ueda, C. Hartmann, R. Felix, M. Bär, C. Schlueter, A. Gloskovskii, I. Bartoš, M. Nandy, J. Houdková, P. Jiříček, W. Jaegermann, J.P. Hofmann, T. Hannappel;Combiningadvancedphotoelectronspectroscopy approaches toanalyzedeeplyburiedGaP (As)/Si (100) interfaces: Interfacialchemicalstatesandcomplete band energydiagramsApplied Surface Science 605 (2022) 154630; DOI: 10.1016/j.apsusc.2022.154630

5.) M.A. ZarePour, O. Romanyuk, D.C. Moritz, A. Paszuk, C. Maheu, S. Shekarabi, K.D. Hanke, D. Ostheimer, T. Mayer, J.P. Hofmann, W. Jaegermann, T. Hannappel;volume energydiagramsof n-GaInP/n-AlInP(100) surfacesand heterointerfaces studiedby X-rayphotoelectronspectroscopySurfacesand Interfaces 34 (2022) 102384DOI: 10.1016/j.surfin.2022.102384

4.) B. Borkenhagen, A. Paszuk, F.N. Knoop, O. Supplie, M. NandyG. Lilienkamp, P. Kleinschmidt, T. Hannappel, W. Daum;Structure and Origin of Antiphase Domains andRelatedDefects in ThinGaPEpilayers on As-Modified Si(100)Crystal Growth & Design22 (2022) 7040; DOI: 10.1021/acs.cgd.2c00697

3.) L.J. Glahn, I.A.R. Alvarado, S. Neufeld, M.A. ZarePour, A. Paszuk, D. Ostheimer, S. Shekarabi, O. RomanyukD.C. Moritz, J.P. Hofmann, W. Jägermann, T. Hannappel, W.G. Schmidt;Clean and Hydrogen-AbsorbedAlInP(001) Surfaces: Structuresand Electronic PropertiesPhysica Status Solidi (b) 259 (2022) 2200308DOI: 10.1002/pssb.202200308

2.) D.C. Moritz, I.A.R. Alvarado, M.A. ZarePour, A. Paszuk, T. FrießE. Runge, J.P. Hofmann, T. Hannappel, W.G. Schmidt, W. Jaegermann;P-terminatedInP (001) surfaces: Surface band bendingandreactivitytowaterApplied Materials and Interfaces 14 (2022) 47255; DOI: 10.1021/acsami.2c13352

1.) T. E. Saenz, M. Nandy, A. Paszuk, D. Ostheimer, J. Koch, W. E. McMahon, J. D. Zimmerman, T. Hannappel, E. L. Warren,MOCVD surface preparation of V-groove Si for III-V growthJournal of Crystal Growth 597 (2022) 126843; DOI: 10.1016/j.jcrysgro.2022.126843

5.) M. Nandy, A. Paszuk, M. Feifel, C. Koppka, P. Kleinschmidt, F. DimrothT. Hannappel;A route toObtaining Low-Defect III-V Epilayers on Si (100) Utilizing MOCVDCrystal Growth & Design 21 (2021) 5603; DOI: 10.1021/acs.cgd.1c00410

4.) O. Romanyuk, A. Paszuk, I. Bartoš, R.G. Wilks, M. Nandy, J. Bombsch, C. Hartmann, R. Félix, S. Ueda, I. Gordeev, J. Houdkova, P. Kleinschmidt, P. Machek, M. Bär, P. Jiříček, T. Hannappel;Volume Bending at Heterovalent Interfaces: Hard X-rayPhotoelectronSpectroscopyofGaP/Si (001) HeterostructuresApplied Surface Science 565 (2021) 150514; DOI: 10.1016/j.apsusc.2021.150514

3.) A. Paszuk, O. Supplie, S. Brückner, E. Barrigón, M. M. May, M. NandyA. Gieß, A. Dobrich, P. Kleinschmidt, I. Rey-Stolle, T. Hannappel;AtomicsurfacecontrolofGe (100) in MOCVD reactorscoatedwith (Ga) As residualsApplied Surface Science 565 (2021) 150513; DOI: 10.1016/j.apsusc.2021.150513

2.) N. V. Ryzhkov, O. Ledovich, L. Eggert, A. Bund, A. Paszuk, T. Hannappel, K. Klyukin, V. Alexandrov, E. V. Skorb;Layer-By-layer PolyelectrolyteassemblyfortheProtectionofGaPSurfacesfromphotocorrosionACS Applied Nano Materials 4(2021) 425; DOI: 10.1021/acsanm.0c02768

1.) M. Nandy, A. Paszuk, M. Feifel, C. Koppka, P. Kleinschmidt, F. Dimroth, T. Hannappel;Reductionofdefects in GaPlayersgrown on Si (100) by MOCVD2021 IEEE 48th PhotovoltaicSpecialists Conference (PVSC 2021) 1344; DOI: 10.1109/PVSC43889.2021.9518758

4.) P. Kleinschmidt, P. MutomboT .Berthold, A. Paszuk, M. Steidl, G. Ecke, A. Nägelein, C. Koppka, O. Supplie, S. Krischok, O. Romanyuk, M. Himmerlich, T. Hannappel;Atomicsurface structure of MOVPE-preparedGaP (111) BApplied Surface Science 534 (2020) 147346; DOI: 10.1016/j.apsusc.2020.147346

3.) O. Romanyuk, I. Gordeev, A. Paszuk, O. Supplie, J.P. Stoeckmann, J. Houdkova, E. Ukraintsev, I. Bartos, P. Jiiricek, T. Hannappel;GaP/Si(001) interfacestudyby XPS in combinationwith Ar gas clusterion beam sputteringApplied Surface Sciences 514 (2020) 145903; DOI: 10.1016/j.apsusc.2020.145903

2.) O. Supplie, A. Heinisch, A. Paszuk, M. Nandy, A. Tummalieh, P. Kleinschmidt, M. SugiyamaT. Hannappel;Quantificationofthe As/P content in GaAsPduring MOVPE growthApplied Physics Letters 117 (2020) 061601; DOI: 10.1063/5.0012948

1.) O. Romanyuk, O. Supplie, A. Paszuk, J.P. Stoeckmann, R.G. Wilks, J. Bombsch, C. Hartmann, R. Garcia-Diez, S. Ueda, I. Bartos, I. Gordeev, J. Houdkkova, P. Kleinschmidt, M. Bär, P. Jiricek, T. Hannappel;Hard X-rayphotoelectronspectroscopystudyofcorelevelshifts at buriedGaP/Si (001) interfacesSurface and Interface Analysis 52 (2020) 933; DOI: 10.1002/sia.6829

13.)O. Supplie, O. Romanyuk, C. KoppkaM. Steidl, A. Nägelein, A. Paszuk, A. Dobrich, L. Winterfeld, P. Kleinschmidt, E. Runge, T. Hannappel;Metalorganicvapor phase Epitaxyof III-V-on-Silicon: Experiment & TheoryProgress in Crystal Growth andCharacterizationof Materials 64 (2018) 103; DOI: 10.1016/j.pcrysgrow.2018.07.002

12. ) A. Paszuk, O. Supplie, M. Nandy, S. Brückner, A. Dobrich, P. Kleinschmidt, B. Kim, Y. Nakano, M. SugiyamaT. Hannappel;Double-layerStepped Si(100) SurfacesPrepared in As-rich CVD ambienceApplied Surface Science 462 (2018) 1002; DOI: 10.1016/j.apsusc.2018.07.181

11.) A. Paszuk, O. Supplie, B. Kim, S. Brückner, M. Nandy, A. Heinisch, P. Kleinschmidt, Y. Nakano, M. SugiyamaT. Hannappel;GaAsP/Si tandem solar cells: In situ study on GaP/Si:Asvirtualsubstrate preparationSolar Energy Materials and Solar Cells 180 (2018) 343; DOI: 10.1016/j.solmat.2017.07.032

10.) B. Kim, K. Toprasertpong, A. Paszuk, O. Supplie, Y. Nakano, T. Hannappel, M. Sugiyama;GaAsP/Si tandem solar cells: Realisticpredictionofefficiencygainbyapplyingstrain-balanced multiple quantumwellsSolar Energy Materials and Solar Cells 180 (2018) 303; DOI: 10.1016/j.solmat.2017.06.060

9.) A. Paszuk, O. Supplie, M. Nandy, S. Brückner, A. Dobrich, P. Kleinschmidt, B. Kim, Y. Nakano, M. SugiyamaT. Hannappel;As-modified Si(100) Surfacesfor III-V-on-Si Tandem Solar CellsProc. IEEE PVSC 45 / Proc. IEEE WCPEC 7, IEEE PhotovoltaicSpecialists Conference, WaikoloaVillage, HI, USA (2018) 0233; DOI: 10.1109/PVSC.2018.8547817

8.) W. Zhao, M. Steidl, A. Paszuk, S. Brückner, A. Dobrich, O. SupplieP. Kleinschmidt, T. Hannappel;Analysis ofthe Si(111) surfaceprepared in chemicalvaporambientfor subsequent III-V heteroepitaxyApplied Surface Science 392 (2017) 1043; DOI: 10.1016/j.apsusc.2016.09.081

7.) A. Paszuk, A. Dobrich, C. Koppka, S. Brückner, M. Duda, P. Kleinschmidt, O. SupplieT. Hannappel;In situ preparation of Si p-n junctionsand subsequent surface preparation for III-V heteroepitaxy in MOCVD ambientJournal of Crystal Growth 464 (2017) 14; DOI: 10.1016/j.jcrysgro.2016.11.109

6.) A. Paszuk, O. Supplie, S. Brückner, M. M. May, A. Dobrich, A. Nägelein, B. Kim, Y. Nakano, M. SugiyamaP. Kleinschmidt, T. Hannappel;In situ controloverthesublatticeorientationofGaP/Si(100):As virtualsubstratesfortandemabsorbersProc. IEEE PVSC 44, IEEE PhotovoltaicSpecialists Conference, Washington, WA, USA (2017) 2538; DOI: 10.1109/PVSC.2017.8366561

5.) B. Kim, K. Toprasertpong, O. Supplie, A. Paszuk, T. Hannappel, M. Sugiyama;Efficiency ofGaAsP/Si Two-junction Solar Cells with Multi-Quantum Wells: A Realistic Modeling with Carrier Collection EfficiencyProc. IEEE PVSC 44, IEEE PhotovoltaicSpecialists Conference, Washington, WA, USA (2017) 2524; DOI: 10.1109/PVSC.2017.8366310

4.) C. Koppka, A. Paszuk, M. Steidl, O. SupplieP. Kleinschmidt, T. Hannappel;Suppression ofrotationaltwinformation in virtualGaP/Si(111) substratesfor III-V nanowiregrowthCrystal Growth & Design 16 (2016) 6208; DOI: 10.1021/acs.cgd.6b00541

3.)O. Supplie, MM. May, P. Kleinschmidt, A. Nägelein, A. Paszuk, S. Brückner, T. Hannappel;In situ controlledheteroepitaxyof single-domain GaP on As-modified Si(100)APL Materials 3 (2015) 126110; DOI: 10.1063/1.4939005

2.)A. Paszuk, S. Brückner, M. Steidl, W. Zhao, A. Dobrich, O. SupplieP. Kleinschmidt, W. Prost, T. Hannappel;Controlling thepolarityofmetalorganicvaporphaseepitaxy-grownGaP on Si(111) for subsequent III-V nanowiregrowthApplied Physics Letters 106 (2015) 231601; DOI: 10.1063/1.4922275

1.)O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil, Y. Yamamoto, M.A. Schubert, A. Trampert, B. TillackW.T. Masselink, T. Hannappel, T. Schroeder;Lattice-engineered Si1-xGex-buffer on Si(001) forGaPintegrationJournal of Applied Physics 115 (2014) 103501; DOI: 10.1063/1.4864777