Novel gas phase route toward patterned deposition of sputter-free Pt/Al nanofoils. - In: Advanced Materials Technologies, ISSN 2365-709X, Bd. 8 (2023), 18, 2300448, S. 1-8
This article reports a new approach toward fabrication and directed assembly of nanoparticulate reactive system (Nanofoils) on patterned substrates. Different from current state-of-the-art, gas phase electrodeposition uses nanoparticles instead of atoms to form densely packed multilayered thin films at room temperature-pressure. On ignition, the multilayer system undergoes an exothermic self-propagating reaction. The numerous contact points between two metallic nanoparticulate layers aid in high heat release. Sub-10-nm Platinum (Pt) and Aluminum (Al) particles are synthesized through cathode erosion of metal electrodes in a flow of pure nitrogen gas (spark ablation). Pt/Al bilayer stacks with total thickness of 3–8 µm undergo self-propagating reaction with a 10.3 mm s−1 wavefront velocity on local ignition. The reaction wavefront is captured using high speed videography. Calorimetry studies reveal two exothermic peaks suggesting Pt/Al alloy formation. The peak at 135 ˚C has a higher calorific value of 150 mW g−1 while the peak at 400 ˚C has a 12 mW g−1 exothermic peak. X-ray diffraction study shows reaction-products are cubic Al2Pt with small quantities of orthorhombic Al6Pt and orthorhombic AlPt2. Electron microscopy studies help draw a correlation between film morphology, bimetallic interface, nanoparticle oxidation, and self-propagating reaction kinetics that is significant in broadening our understanding towards nanoparticulate reactive systems.
https://doi.org/10.1002/admt.202300448
Evaluation of hysteresis response in achiral edges of graphene nanoribbons on semi-insulating SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 1089 (2023), S. 15-22
Hysteresis response of epitaxially grown graphene nanoribbons devices on semi-insulating 4H-SiC in the armchair and zigzag directions is evaluated and studied. The influence of the orientation of fabrication and dimensions of graphene nanoribbons on the hysteresis effect reveals the metallic and semiconducting nature graphene nanoribbons. The hysteresis response of armchair based graphene nanoribbon side gate and top gated devices implies the influence of gate field electric strength and the contribution of surface traps, adsorbents, and initial defects on graphene as the primary sources of hysteresis. Additionally, passivation with AlOx and top gate modulation decreased the hysteresis and improved the current-voltage characteristics.
https://doi.org/10.4028/p-i2s1cm
Three-dimensional MoS2 nanosheet structures: CVD synthesis, characterization, and electrical properties. - In: Crystals, ISSN 2073-4352, Bd. 13 (2023), 3, 448, S. 1-14
The proposed study demonstrates a single-step CVD method for synthesizing three-dimensional vertical MoS2 nanosheets. The postulated synthesizing approach employs a temperature ramp with a continuous N2 gas flow during the deposition process. The distinctive signals of MoS2 were revealed via Raman spectroscopy study, and the substantial frequency difference in the characteristic signals supported the bulk nature of the synthesized material. Additionally, XRD measurements sustained the material’s crystallinity and its 2H-MoS2 nature. The FIB cross-sectional analysis provided information on the origin and evolution of the vertical MoS2 structures and their growth mechanisms. The strain energy produced by the compression between MoS2 islands is assumed to primarily drive the formation of vertical MoS2 nanosheets. In addition, vertical MoS2 structures that emerge from micro fissures (cracks) on individual MoS2 islands were observed and examined. For the evaluation of electrical properties, field-effect transistor structures were fabricated on the synthesized material employing standard semiconductor technology. The lateral back-gated field-effect transistors fabricated on the synthesized material showed an n-type behavior with field-effect mobility of 1.46 cm2 V^-1 s^-1 and an estimated carrier concentration of 4.5 × 10^12 cm^-2. Furthermore, the effects of a back-gate voltage bias and channel dimensions on the hysteresis effect of FET devices were investigated and quantified.
https://doi.org/10.3390/cryst13030448
Phase formation of cubic silicon carbide from reactive silicon-carbon multilayers. - In: MRS advances, ISSN 2059-8521, Bd. 8 (2023), 9, S. 494-498
Silicon carbide layers were fabricated using self-propagating high-temperature synthesis of binary silicon-carbon based reactive multilayers. The silicon and carbon bilayers were fabricated with two different bilayer thicknesses. They are deposited by magnetron sputtering in an alternating layer system with a total thickness of 1 μm. The entire system is annealed by rapid thermal annealing at different temperatures ranging from 500 to 1100 ˚C. From XRD analysis we could find that the formation of the silicon carbide phase was initiated from 700 ˚C. With increasing bilayer thickness the silicon carbide phase formation was partially suppressed by the silicon recrystallization due to resulting lower carbon diffusion into silicon. The transformation process proceeds in a four-step process: densification/recrystallization, interdiffusion, nucleation and transformation. From this, it was noted that when compared to low bilayer thickness samples, the formation of the silicon carbide phase is delayed with increasing bilayer thickness and needs higher reaction initiation temperatures.
https://doi.org/10.1557/s43580-023-00531-3
Energy-efficient operation conditions of MoS2-based memristors. - In: Physica status solidi, ISSN 1862-6319, Bd. 220 (2023), 13, 2200893, S. 1-12
Sufficient energy consumption for conventional information processing makes it necessary to look for new computational methods. One of the possible solutions to this problem is neuromorphic computations using memristive devices. Memristors based on molybdenum disulfide (MoS2) are a promising way to provide a sizeable amount of hysteresis at low energy costs. Herein, different configurations of MoS2 memristors as well as the mechanisms involved in hysteresis formation are shown. Bottom gated configuration is beneficial in terms of hysteresis area and energy efficiency. The impact of device channel dimensions on the hysteresis area and energy consumption is discussed. Different operation conditions with triangular, rectangular, sinusoidal, and sawtooth drain-to-source pulses are simulated, and rectangular pulses demonstrate the highest energy efficiency. The study shows the potential to realize low-power neuromorphic systems using MoS2 memristive devices.
https://doi.org/10.1002/pssa.202200893
Influence of environment on self-propagating reactions in Al/Ni multilayer foils. - In: MRS advances, ISSN 2059-8521, Bd. 8 (2023), 9, S. 477-483
Reactive aluminum-nickel multilayer system shows exothermic energetic materials which act as a heat source for packaging and bonding of microsystems. The main challenge is controlling the self-propagation reaction velocity and temperature generated by thermal management through different thermal conductive substrate materials. The current work investigates the heat distribution of Al/Ni multilayer foils from different thermal conductive substrates which act as heat sink materials during the self-propagating reaction. A two-dimensional numerical model was developed to study thermal conductive heat loss and substrate thermal properties on the self-propagating reaction in Al/Ni multilayer foils. The self-propagating reaction was introduced on the surface of the foils by an electrical spark. Here we investigate the minimum critical thickness of Al/Ni multilayer foils which shows the self-propagation reaction on different substrates and verified from the two-dimensional numerical model. The outcomes of this investigation will facilitate the integration of Al/Ni multilayer foils on different substrates as intrinsic heat sources for different applications of micro/nanodevices.
https://doi.org/10.1557/s43580-023-00574-6
Self-aligning metallic vertical interconnect access formation through microlensing gas phase electrodeposition controlling airgap and morphology. - In: Advanced electronic materials, ISSN 2199-160X, Bd. 9 (2023), 1, 2200838, S. 1-8
This publication reports self-aligning metallic via microlensing gas phase electrodeposition formation. Key operational parameters to fabricate vertical ruthenium and rhodium interconnects (via) with a diameter of 100 nm are discussed. Moreover, airgaps are implemented during the deposition process, which utilizes spark discharge to generate a flux of charged nanoparticles. An inert gas flow transports the nanoparticles through a reactor chamber close to the target substrate. The substrate uses a pre-patterned resist with openings to a silicon/silicon dioxide/metal stack to direct the deposition of the nanoparticles to form localized self-aligning vertical interconnects. Five process parameters were identified, which impact the morphology and conductance of the resulting interconnects: spark discharge power, gas flow rate, microlens via dimensions, substrate surface potential, and in situ flash lamp power. This parameter set enables a controlled adjustment of the via interconnect morphology and its minimum feature size. Gas flow rate in combination with spark discharge power contribute significantly to the morphology of the interconnect. Spark power and microlens via dimensions have the largest influence on the surface potential of the insulating resist cover, which enables a localized microlensing gas phase electrodeposition of a via with a controlled ratio between conducting diameter and airgap.
https://doi.org/10.1002/aelm.202200838
Large single domain iron oxide nanoparticles as thermal markers for lateral flow assays. - In: Biomedical engineering, ISSN 1862-278X, Bd. 67 (2022), S. 63
https://doi.org/10.1515/bmt-2022-2001
Hysteresis associated with intrinsic-oxide traps in gate-tunable tetrahedral CVD-MoS2 memristor. - In: IEEE 22nd International Conference on Nanotechnology (NANO), (2022), S. 527-530
We introduce back gated memristor based on CVD-grown 30-40 nm thick MoS2 channel. The device demonstrates bipolar behaviour and the measurements are consistent with the simulations performed within the intrinsic-oxide traps model. This confirms the theory that the source of hysteresis in thin-film MoS2 memristors is charge trapping on MoS2/SiO2 interface and the grain boundaries. The impact of back gate voltage bias, voltage sweep range and channel area on memristive effect was studied and quantified using hysteresis area. Hysteresis in bipolar memristors can be tuned by back gate voltage, which makes these devices promising for neuromorphic computing.
https://doi.org/10.1109/NANO54668.2022.9928717
Formation and characterization of three-dimensional tetrahedral MoS2 thin films by chemical vapor deposition. - In: Crystal growth & design, ISSN 1528-7505, Bd. 22 (2022), 9, S. 5229-5238
A method to synthesize the three-dimensional arrangement of bulk tetrahedral MoS2 thin films by solid source chemical vapor deposition of MoO3 and S is presented. The developed synthesizing recipe uses a temperature ramping with a constant N2 gas flow in the deposition process to grow tetrahedral MoS2 thin film layers. The study analyses the time-dependent growth morphologies, and the results are combined and presented in a growth model. A combination of optical, electron, atomic force microscopy, Raman spectroscopy, and X-ray diffraction are used to study the morphological and structural features of the tetrahedral MoS2 thin layers. The grown MoS2 is c-axis oriented 2H-MoS2. Additionally, the synthesized material is further used to fabricate back-gated field-effect transistors (FETs). The fabricated FET devices on the tetrahedral MoS2 show on/off current ratios of 10^6 and mobility up to ∼56 cm^2 V^-1 s^-1 with an estimated carrier concentration of 4 × 10^16 cm-3 for VGS = 0 V.
https://doi.org/10.1021/acs.cgd.2c00333