Funded OA publications

Well-defined semiconductor heterostructures are a basic requirement for the development of high-performance optoelectronic devices. In order to achieve the desired properties, a thorough study of the electrical behavior with a suitable spatial resolution is essential. For this, various sophisticated tip-based methods can be employed, such as conductive atomic force microscopy or multitip scanning tunneling microscopy (MT-STM). We demonstrate that in any tip-based measurement method, the tip-to-semiconductor contact is decisive for reliable and precise measurements and in interpreting the properties of the sample. For that, we used our ultrahigh-vacuum-based MT-STM coupled in vacuo to a reactor for the preparation of nanowires (NWs) with metal organic vapor phase epitaxy, and operated our MT-STM as a four-point nanoprober on III-V semiconductor NW heterostructures. We investigated a variety of upright, free-standing NWs with axial as well as coaxial heterostructures on the growth substrates. Our investigation reveals charging currents at the interface between the measuring tip and the semiconductor via native insulating oxide layers, which act as a metal-insulator-semiconductor capacitor with charging and discharging conditions in the operating voltage range. We analyze in detail the observed I-V characteristics and propose a strategy to achieve an optimized tip-to-semiconductor junction, which includes the influence of the native oxide layer on the overall electrical measurements. Our advanced experimental procedure enables a direct relation between the tip-to-NW junction and the electronic properties of as-grown (co)axial NWs providing precise guidance for all future tip-based investigations.

We propose a Lagrangian method for simultaneous, volumetric temperature and velocity measurements. As tracer particles for both quantities, we employ encapsulated thermochromic liquid crystals (TLCs). We discuss the challenges arising from color imaging of small particles and present measurements in an equilateral hexagonal-shaped convection cell of height h = 60 mm and distance between the parallel side walls w = 10^4 mm, which corresponds to an aspect ratio Γ = 1.73. As fluid, we use a water-glycerol mixture to match the density of the TLC particles. We propose a densely-connected neural network, trained on calibration data, to predict the temperature for individual particles based on their particle image and position in the color camera images, which achieves uncertainties below 0.2 K over a temperature range of 3 K. We use Shake-the-Box to determine the 3D position and velocity of the particles and couple it with our temperature measurement approach. We validate our approach by adjusting a stable temperature stratification and comparing our measured temperatures with the theoretical results. Finally, we apply our approach to thermal convection at Rayleigh number Ra = 3.4 × 10^7 and Prandtl number Pr = 10.6. We can visualize detaching plumes in individual temperature and convective heat transfer snapshots. Furthermore, we demonstrate that our approach allows us to compute statistics of the convective heat transfer and briefly validate our results against the literature.

Two-dimensional layered transition metal dichalcogenides (TMDCs) are promising memristive materials for neuromorphic computing systems. Despite extensive experimental work, the underlying switching mechanisms are still not understood, impeding progress in material and device functionality. This study reveals the dominant role of defect dynamics in the switching process of 2D TMDC materials. The switching process is governed by the formation and annihilation dynamics of a local vacancy depletion zone. It explains the distinct features of the device characteristics observed experimentally, including fundamentally different device behavior previously thought to originate from multiple mechanisms. Key influence factors are identified and discussed with a fully coupled and dynamic charge transport model for electrons, holes, and ionic point defects, including image-charge-induced Schottky barrier lowering (SBL). Thermal effects and local Joule heating are considered by coupling the transient heat transfer equation to the electronic properties. The model is validated with hysteresis and pulse measurements for various lateral 2D MoS2-based devices, strongly corroborating the relevance of vacancy dynamics in TMDC devices and offering a new perspective on the switching mechanisms. The insights gained from this study can be used to extend the functional behavior of 2D TMDC memristive devices in future neuromorphic computing applications.

An unconventional approach for the resistless nanopatterning 2H- and 1T’-MoTe2 by means of scanning probe lithography is presented. A Fowler-Nordheim tunneling current of low energetic electrons (E = 30-60 eV) emitted from the tip of an atomic force microscopy (AFM) cantilever is utilized to induce a nanoscale oxidation on a MoTe2 nanosheet surface under ambient conditions. Due to the water solubility of the generated oxide, a direct pattern transfer into the MoTe2 surface can be achieved by a simple immersion of the sample in deionized water. The tip-grown oxide was characterized using Auger electron and Raman spectroscopy, revealing it consists of amorphous MoO3/MoOx as well as TeO2/TeOx. With the presented technology in combination with subsequent AFM imaging it was possible to demonstrate a strong anisotropic sensitivity of 1T’-/(Td)-MoTe2 to aqueous environments. We finally used the discussed approach to structure a nanoribbon field effect transistor out of a few-layer 2H-MoTe2 nanosheet. This article is protected by copyright. All rights reserved

The growing applications and constant miniaturization of electronic devices and of low-temperature co-fired ceramics (LTCC) in various fields, such as aviation, telecommunications, automotive, satellite communications, and military, have led to an increase in the demand for LTCC. Such prospects arise due to the continuous scaling down of components and high-density interconnection in electronics packaging. This paper reports a technique for the transfer of high-resolution microstructures from silicon substrates to LTCC. In this method, gold and copper patterns were formed by photolithography, electrodeposition, and residual layer stripping on silicon substrate. Lithography provides the opportunity to create and transfer complex patterns for use in several different applications and electroplating enables the use of pure metal for excellent electrical properties. The developed structures were transferred onto a top layer of LTCC tape using hot embossing. Then, the subsequent layers were stacked, laminated, and sintered. A resolution of 1.5 μm after free sintering and 4.5 μm after pressure-assisted sintering was achieved. This distinctive method can be useful for several applications requiring high-resolution and superior electrical properties.