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Ansprechpartner

Prof. Dr. Martin Ziegler

Fachgebietsleiter

Telefon +49 3677 69-3717

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Ihre Position

INHALTE

Publikationen

Beiträge in Zeitschriften und Konferenzbänden

2020

Novel hardware and concepts for unconventional computing.
Martin Ziegler
Sci Rep 10, 11843 (2020).

Thermal Simulation for Power Density Optimization of a SiC-MOSFET Automotive Inverter
Nathalie Becker, Sandro Bulovic, Roland Bittner, Reinhard Herzer,
CIPS2020 (2020).

110 kW, 2.6 l SiC-inverter for DRIVEMODE - a highly integrated automotive drivetrain
Roland Bittner, Sandro Bulovic, Matthias Kujath, Nathalie Becker, Sven Bütow, Nicola Burani
PCIM 2020 (2020). 

Optimization of Automotive SiC-SIcpack Converter System with New Gate Connection for SiC devices and New Integrated Discharge Unit for Functional Safety,
S. Buetow, R. Bittner, S. Bulovic, R. Herzer, J. Klier, N. Becker
ISPSD2020 (2020).

Boron nitride switches for 5G and beyond
F. Schwierz
Nature Electronics, Accepted for publication (2020).

Insulators for 2D nanoelectronics: The gap to bridge
Y. Y. Illarionov, T. Knobloch, M. Lanza, D. Akinwande, M. I. Vexler, T. Mueller, M. Lemme, G. Fiori, F. Schwierz, and T. Grasser
Nature Communications
 11, 3385 (2020).

Status and future prospects of CMOS scaling and Moore's Law – A personal perspective
F. Schwierz and J. J. Liou
Invited Paper
Latin American Electron Devices Conference LAEDC, San Jose, Costa Rica (2020).

Resistive Switching Behavior of Lateral and Vertical MoS2 Devices
Z. Geng, C. Ziebold, S. Thiele, M. Mikolasek, J. Breza, J. Pezoldt, M. Ziegler, and F. Schwierz
Accepted for presentation at CIMTEC, Montecatimi Terme, Italy (2020).

2D Electronics – Opportunities and Challenges
F. Schwierz
IEEE EDS Distinguished Lecture, IEEE Germany Chapter, Giessen, Germany (2020).

2019

Hippocampal Dentate Gyrus Atrophy Predicts Pattern Separation Impairment in Patients with LGI1 Encephalitis, A. Hanert, J. Rave, O. Granert, M. Ziegler, A. Pedersen, J. Born, C. Finke and T. Bartsch, Neuroscience 6. January 2019 Doi.org/10.1016/j.neuroscience.2018.12.046

Inherent stochastic learning in CMOS integrated HfO2 arrays for neuromorphic computing. Wenger, C., Zahari, F., Mahadevaiah, M. K., Perez, E., Beckers, I., Kohlstedt, H., & Ziegler, M., IEEE Electron Device Letters. (2019).

Reliability of CMOS Integrated Memristive HfO2 Arrays with Respect to Neuromorphic Computing
Mahadevaiah, M. K, Perez, E., Wenger, Ch., Grossi, A., Zambelli, C., Olivo, P., Zahari, F., Kohlstedt, H., Ziegler, M., IEEE International Reliability Physics Symposium (IRPS) (2019)

Correlation between sputter deposition parameters and I-V characteristics in double-barrier memristive devices, Finn Zahari, Felix Schlichting, Julian Strobe, Sven Dirkmann, Julia Cipo, Sven Gauter, Jan Trieschmann, Richard Marquardt, Georg Haberfehlner, Gerald Kothleitner, Lorenz Kienle,  Thomas Mussenbrock, Martin Ziegler, Holger Kersten, and Hermann Kohlstedt, Journal of Vacuum Science & Technology B 37, 061203 (2019);  

A flashback for resistive memory, Martin Ziegler, Nature Electronics 2, 561–562(2019);

2D electronics – Status, prospects, and challenges
F. Schwierz,
Keynote EDSSC
15th IEEE Int. Conf. on Electron Devices and Solid-State Circuits EDSSC, Xi’an, China (2019).

Lateral MoS2 memristors
Z. Geng, C. Ziebold, S. Thiele, M. Mikolasek, J. Breza, J. Pezoldt, M. Ziegler, and F. Schwierz
E-MRS 2019 Fall Meeting, Warzaw, Poland (2019).

Vertical current transport in this MOS structures expressed via transport velocities
J. Racko, M. Mikolasek, P. Benko, S. Thiele, F. Schwierz, and J. Breza
SURFINT – Progress in Applied Surface, Interface and Thin Film Science, Florence, Italy (2019).

Halbleitende 2D-Materialen: Neue Werkstoffe für optische Schichten, Quantenlichtquellen und Fluoreszenzmikroskopie
H. Knopf, A. Kuppadakkath, F. Rickelt, U. Schulz, N. Lundt, F. Löchner, T. Bucher, R. Mupparapu, 
A. George,  C. Schneider, I. Staude, F. Setzpfandt, S.-Y. Lim, T. Pertsch, A. Turchanin, F. Schwierz, and F. Eilenberger
17. Thüringer Werkstofftag, TU Ilmenau, Germany (2019).

2D materials and 2D electronics – Prospects, merits, and limitations
F. Schwierz
Invited Seminar, Slovak University of Technology (STU), Bratislava, Slovakia (2019)

2D electronics – Opportunities and challenges
F. Schwierz
IEEE EDS Distinguished Lecture, IEEE ED/SSC New York Chapter, Columbia University, New York City, NY, USA (2019).

2D electronics – Opportunities and challenges
F. Schwierz
IEEE EDS Distinguished Lecture, IEEE ED Germany Chapter, RWTH Aachen, Germany (2019).

2018

Concepts for closely Mimicking Biological Learning with Memristive Devices: Principles to Emulate Cellular Forms of Learning
M. Ziegler, Ch. Wenger, E. Chicca and H. Kohlstedt
Journal of Applied Physics (Vol.124, Issue 15)
DOI: 10.1063/1.5042040

Technology and electrical characterization of MemFlash cells for neuromorphic applications
H. Winterfeld, M. Ziegler, H. Hanssen, D. Friedrich, W. Benecke and H. Kohlstedt
Journal of Physics D: Applied Physics 51 (32), 324003

Unsupervised Hebbian learning experimentally realized with analogue memrisistive crossbar arrays
M. Hansen, F. Zahari, H. Kohlstedt and M. Ziegler
Scientific reports 8 (1) pp. 8914

A memrisistive plasticity model of voltage-based STDP suitable for recurrent bidirectional neural networks in the hippocampus
N. Diedrich, T. Bartsch, H. Kohlstedt and M. Ziegler
Scientific Reports (nature Publisher Group) 8, pp. 1-12

Intergration of Double Barrier Memristor Die with Neuron ASIC for Neuromorphic Hardware Learning
R. Ranjan, M. Hansen, P.M. Ponce, L.A. Saleh, D. Schroeder, M. Ziegler, .....
Circuits and Systems (ISCAS, 2018 IEEE International Symposium on, pp. 1 - 5

Anticipation of digital patterns
K. Ochs, M. Ziegler, E. Hernandez-Guevara, E. Solan, M. Ignatov, M. Hansen, .....
International Journal of Circuit Theory and Applications 46 (2), pp. 235-243

Guest editorial special issue on 2-D materials for electronic, optoelectronic, and sensor devices,
N. Bhat, S. Das,
D. Esseni, G. Liang,  S. A. Moshkalev, I. Muneta, F. Schwierz, J. T. Teherani, M. de Vittorio, and Y. Yoon,
IEEE Trans. Electron Devices 65, 4034-4039 (2018).

The prospects of transition metal dichalcogenides for ultimately scaled CMOS
S. Thiele, W. Kinberger, R. Granzner, G. Fiori, and F. Schwierz
Solid-State Electron. 143, 2-9 (2018).

MOCVD compatible atomic layer deposition process of Al2O3 on SiC and Graphene/SiC heterostructures
M. Eckstein, C. Koppka, S. Thiele, Y. Mi, R. Xu, Y. Lei, B. Hähnlein, F. Schwierz, and J. Pezoldt
Mater. Sci. Forum 924, 506-510 (2018).

CMOS scaling – Where we are and where we are heading
S. Thiele, J. J. Liou, and F. Schwierz
Plenary Paper
Book of Abstracts 12th Spanish Conference on Electron Devices CDE, Salamanca, Spain, 31-32 (2018).

Simulation of 1-nanometer gate MoS2 MOSFETs
S. Thiele and F. Schwierz
Invited Paper
Proc. 14th ICSICT, Qingdao, China, S19-4 (2018).

2D electronics – Opportunities and challenges
F. Schwierz
Keynote
Book of Abstracts Int. Conf. on Science, Engineering, Vocational Education, and Novelty ICSEVEN, Zhengzhou, China, p. 10 and p. 20 (2018).

2D Electronics – A Promising Option or a Type C Hype Cycle?
F. Schwierz
Invited Paper
Proc. EDTM, Kobe, Japan, 233-235 (2018).

2D Electronics – Motivation, Prospects, and Challenges
F. Schwierz
Tutorial
14th IEEE Int. Conf. Solid-State and Integrated Circuit Technol. ICSICT, Qingdao, China (2018).

Two-Dimensional Materials (Graphene and Beyond) for Electronics - Opportunities and Challenges
F. Schwierz
IEEE EDS Distinguished Lecture, IEEE ED Spain Chapter, Universidad de Salamanca, Spain (2018).

2017

Memristive stochastic plasticity enables mimicking of neural synchrony: Memristive circuit emulates an optical illusion
Ignatov. M,  Ziegler M.,  Hansen, M.,  Ziegler M. and  Kohlstedt H.
Science Advances Vol. 3, no. 10, e1700849 (2017)

Double-Barrier Memristive Devices for Unsupervised Learning and Pattern Recognition
Hansen, M.; Zahari, F.; Ziegler M.;  Kohlstedt H.
Front. Neurosci. 11:91 (2017).

Memristive device based on a depletion-type SONOS field effect transistor
Himmel, N., Ziegler, M., Mähne, H., Thiem, S., Winterfeld, H., Kohlstedt, H.
Semicond. Sci. Technol. (2017).

An enhanced lumped element electrical model of a double barrier memristive device
Solan, E., Dirkmann, S., Hansen, M., Schroeder, D., Kohlstedt, H., Ziegler, M., Thomas Mussenbrock, Ochs, K.
J. Phys. D: Appl. Phys. 50, 195102 (2017).

In depth nano spectroscopic analysis on homogeneously switching double barrier memristive devices
Strobel, J., Hansen, M., Dirkmann, S., Neelisetty, K. K., Ziegler, M., Haberfehlner, G., Popescu, R., Kothleitner, G., Chakravadhanula, V. S. K., Kübel, C., Kohlstedt, H., Mussenbrock, T., Kienle, L.
arXiv preprint arXiv:1703.06741 (2017).

Anticipation of digital patterns
Ochs, K., Ziegler, M., Hernandez-Guevara, E., Solan, E., Hansen, M., Ignatov, M., Singh Gill, M., Kohlstedt, H.,
Journal of Circuit Theory & Applications (2017).

Graphene nanoribbons for electronic devices
Z. Geng, B. Hähnlein, R. Granzner, M. Auge, A. A. Lebedev, V. Y. Davydov, M. Kittler, J. Pezoldt, and F. Schwierz
Ann. Phys. 529, 1700033 (2017).

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, I. Hörselmann, H. O. Jacobs, F. Schwierz, and J. Pezoldt
phys. stat. sol. A 214, 1600415 (2017).

AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, I. Hörselmann, H. O. Jacobs, F. Schwierz, and J. Pezoldt
phys. stat. sol. A 214, 1600416 (2017).

Simulation of real I-V characteristics of metal/GaN/AlGaN heterostructure based on the 12-EXT model of trap-assisted tunneling
J. Racko, P. Benko, M. Mikolasek, R. Granzner, M. Kittler, F. Schwierz, L. Harmatha, and J. Breza
Appl. Surf. Sci. 395, 122-130 (2017).

Simulation of DIBL effect in junctionless SOI MOSFETs with extended gate
A. E. Atamuratov, M. Khalilloev, A. Abdikarimov, Z. A. Atamuratova, M. Kittler, R. Granzner, and F. Schwierz
Nanosystems: Physics, Chemistry, Mathematics 8, 75-78 (2017).

The prospects of 2D materials for ultimately scaled CMOS
S. Thiele, 
W. Kinberger, R. Granzner, G. Fiori, and F. Schwierz
Invited Talk
Proc. EURO SOI – ULIS, Athens, Greece, 113-116 (2017).

First demonstration of W-Band Tri-gate GaN-HEMT power amplifier MMIC with 30 dBm output power
E. Ture, P. Brückner, R. Quay, M. Alsharef, R. Granzner, F. Schwierz, and O. Ambacher
Proc. IEEE MTT-S International Microwave Symposium (IMS), 35-37, Hawaii, USA (2017).

Two-Dimensional Electronic Materials – Opportunities and Challenges
F. Schwierz
Keynote
ISNE, Keelung, Taiwan (2017).

Effects of electron effective mass on ultimately scaled 2D MOSFETs
S.Thiele, W. Kinberger, G. Fiori, and F. Schwierz
Flatlands Beyond Graphene, Lausanne, Switzerland (2017).

2D Electronics – Opportunities and Challenges
F. Schwierz
IEEE Electron Devices Society Distinguished Lecture
Graduate Students Meeting on Electronics Engineering, Universitat Rovira I Virgili, Tarragona (Spain).

2D Electronics – Opportunities and Challenges
F. Schwierz
IEEE EDS Distinguished Lecture, IEEE EDS Santa Clara Valley / San Francisco Joint Chapter, Stanford University, Stanford, CA, USA (2017).

2016

Complementary Floating Gate Transistors with Memristive Operation Mode
Ziegler, M., Günther, R., and Kohlstedt, H.
IEEE Electron Device Letters 37: 186-189 (2016)

Synchronization of two memristively coupled van der Pol oscillators
Ignatov, M., Hansen, M., Ziegler, M., and Kohlstedt, H.
Appl. Phys. Lett. 108, 084105 (2016)

Polarity-tunable spin transport in all-oxide multiferroic tunnel junctions
Soni, R., Petraru, A., Nair, H.S., Vavra, O., Ziegler, M., Kim, S.K., Jeong, D.S., Kohlstedt, H. Nanoscale 8, 10799-10805 (2016)

The role of ion transport phenomena in memristive double barrier devices
Dirkmann, S., Hansen, M., Ziegler M., Kohlstedt H., Mussenbrock, T.
Sci. Rep. 6: 35686 (2016)

Double barrier memristive devices for neuromorphic computing
Hansen, M., Ziegler M., and Kohlstedt, H.
IEEE ICRC 2016 (2016)

Two-Dimensional Electronics – Prospects and Challenges
F. Schwierz (Editor)
Printed Edition of the Special Issue Published in Electronics
MDPI (2016).

Graphene for RF analog applications
M. C. Lemme and F. Schwierz
In: A. Dimoulas, M. Houssa, and A. Molle (eds.), 2D Materials for Nanoelectronics
CRC Press (2016).

RF Performance of tri-gate GaN HEMTs
M. Alsharef, M. Christiansen, R. Granzner, E. Ture, R. Quay, O. Ambacher, and F. Schwierz
IEEE Trans. Electron Dev. 63, 4255-4261 (2016).

Tri-gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates
W. Jatal, U. Baumann, H. O. Jacobs, F. Schwierz, and Jörg Pezoldt
Mat
erials Science Forum 858, 1174-1177 (2016).

Amplification in graphene nanoribbon junctions
J. Pezoldt,
B. Hähnlein, H. O. Jacobs, and F. Schwierz
Materials Science Forum 858, 1141-1144 (2016).

Planar nanowire transistors from two-dimensional materials
B. Hähnlein, M. A. Alsioufy, M. Lootze, H. O. Jacobs, F. Schwierz, and J. Pezoldt
Materials Science in Semiconductor Processing 42, 183–187 (2016).

High-current submicron tri-gate GaN high-electron mobility transistors with binary and quarternary barriers
E. Ture, P. Brückner, B.-J. Godejohann, R. Aidam, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, and O. Ambacher
IEEE J. Electron Devices Soc. 4, 1-4 (2016).

Two-dimensional electronics – prospects and challenges
F. Schwierz
Editorial
Electronics 5, p. 30 (2016).

Simulation of 50-nm gate graphene nanoribbon transistors
C. Nanmeni Bondja, Z. Geng, R. Granzner, J. Pezoldt, and F. Schwierz
Electronics 5, p. 3 (2016).

CMOS scaling – Impact of low-dimensional channel materials
R. Granzner, Z. Geng, W. Kinberger, and F. Schwierz
Invited paper
Proc. ICSICT, Hangzhou, China, 466-469 (2016).

2D electronics – opportunities and limitations
Z. Geng, W. Kinberger, R. Granzner, J. Pezoldt, and F. Schwierz
Invited paper
Proc. ESSDERC 2016, Lausanne, Switzerland, 230-235 (2016).

Performance of tri-gate AlGaN/GaN HEMTs
M. Alsharef, R. Granzner, F. Schwierz, E. Ture, R. Quay, and O. Ambacher
Proc. ESSDERC 2016, Lausanne, Switzerland, 176-179 (2016).

Enhancement-mode AlGaN/GaN FinFETs with high on/off performance in 100 nm gate length
E. Ture, P. Brückner, R. Quay, O. Ambacher,  M. Alsharef, R. Granzner, and F. Schwierz
Proc. EuMIC 2016, London, UK, 61-64 (2016).

Scaling issues of transistors based on 2D materials
Z. Geng, R. Granzner, J. Pezoldt, and F. Schwierz
Invited talk
E-MRS 2016 Spring Meeting, Lille, France (2016).

2D materials for future electronics
F. Schwierz
Invited talk
Book of Abstracts
2nd Annual World Congress of Smart Materials WCSM, Singapore, 332 (2016).

Two-Dimensional Materials (Graphene & Beyond) for Electronics – Opportunities and Challenges
F. Schwierz
IEEE EDS Distinguished Lecture, University of Central Florida, Orlando, FL, USA (2016).

2015

Memristive Hebbian Plasticity Model: Device Requirements for the Emulation of Hebbian Plasticity Based on Memristive Device
Ziegler, M., Riggert, C., Hansen, M., Bartsch, T., Kohlstedt, H.
IEEE TBio CAS 9: 197-206 (2015)

Pattern recognition with TiOx-based memristive devices
Zahari, F., Hansen, M., Mussenbrock, T., Ziegler, M., and Kohlstedt, H.
AIMS Materials Science 2: 203-216 (2015)

A memristive spiking neuron with firing rate coding
Ignatov M, Ziegler M, Hansen M, Petraru A and Kohlstedt H
Front. Neurosci. 9:376. doi: 10.3389/fnins.2015.00376 (2015)

A double barrier memristive device
M. Hansen, M. Ziegler, L. Kolberg, R. Soni, S. Dirkmann, T. Mussenbrock, and H. Kohlstedt
Scientific Reports, vol. 5, p. 13753 (2015)

Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices
Dirkmann,S., Ziegler, M., Hansen, M., Kohlstedt, H., Trieschmann, J., and Mussenbrock, T.
J. Appl. Phys. 118, 214501 (2015)

Graphene electronics
F. Schwierz
In: A. Chen, J. Hutchby, V. Zhirnov, and G. Bourianoff (eds.), Emerging nanoelectronic devices
J. Wiley & Sons (2015).

Performance of graphene and beyond graphene 2D semiconductor devices
F. Schwierz
Invited Paper

ECS Trans. 69, 231-240 (2015).

Bias-free lateral THz emitters - a simulation study
R. Granzner, V. M. Polyakov, V. Cimalla, and F. Schwierz
J. Appl. Phys. 118, 043102 (2015).

Two-dimensional materials and their prospects in transistor electronics
F. Schwierz, J. Pezoldt, and R. Granzner
Invited feature article
Nanoscale 7, 8261-8283 (2015).

High frequency performance of GaN HEMTs on 3C-SiC/Si substrates with Au-Free ohmic contacts
W. Jatal, U. Baumann, K. Tonisch, F. Schwierz, and J. Pezoldt
IEEE Electron Device Lett. 36, 123-125, (2015).

Graphene transistors
F. Schwierz
Invited Paper
Brazil
MRS Meeting, Rio de Janeiro, Brazil (2015).

Graphene and 2D based devices performance
F. Schwierz
Invited Paper
ULSI Process Integration 9, 228th Electrochem. Soc. Meeting, Phoenix, AZ, USA (2015).

Graphentransistoren - Potential und Probleme
F. Schwierz
Invited Talk
Workshop Graphen – Vakuumverfahrenstechnik und Werkstoffanwendungen, Dresden, Germany (2015).

Tri-gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates
W. Jatal, F. Schwierz, and J. Pezoldt
ICSCRM, Giardini Naxos, Italy (2015).

Amplification in graphene nanoribbon junctions
B. Hähnlein, F. Schwierz, and J. Pezoldt
ICSCRM, Giardini Naxos, Italy (2015).

Lateral nanowire transistors from two dimensional materials
B. Hähnlein, A. Alsioufy, M. Lootze, F. Schwierz, and J. Pezoldt
E-MRS 2015 Spring Meeting, Lille, France (2015).

Simulation of leakage current in AlGaN/GaN heterostructures with a new model of trap-assisted tunneling
J. Racko, P. Benko, A. Grmanova, L. Harmatha, R. Granzner, M. Kittler, F. Schwierz, and J. Breza
Proc. APCOM, Strbske Pleso, Slovakia, 208-211 (2015).

Graphene and beyond – Two-dimensional materials for transistor applications
F. Schwierz
Invited Paper
SPIE DSS, Balimore, MD, USA (2015).

2D materials beyond graphene for future electronics
F. Schwierz
Invited Paper
Proc. FCMN, 72-75, Dresden, Germany (2015)

Performance and parasitic analysis of submicron-scaled tri-gate AlGaN/GaN HEMTs
E. Ture, P. Brückner, F. V. Raay, M. Alsharef, R. Granzner, F. Schwierz, R. Quay, and O. Ambacher
Proc. EuMIC, 97-100, Paris, France (2015).

2014

Giant electrode effect on tunneling electroresistance in ferroelectric tunnel junctions
R. Soni, A. Petraru, P. Meuffels, O. Vavra, M. Ziegler, S. K. Kim, D. S. Jeong, N. A. Pertsev, H. Kohlstedt
Nature Communications 5, 5414 (2014)

An electronic implementation of amoeba anticipation
Ziegler, M; Ochs, K.; Hansen, M; Kohlstedt, H.
Appl. Phys. A 114, , Issue 2, pp 565-570 (2014)

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing
Riggert, C., Ziegler, M., Schröder, D., Krautschneider, W.H., Kohlstedt, H.
Semicond. Sci. Technol. 29, 104011 (2014)

Building memristive neurons and synapses
Ziegler, M.; Hansen, M.; Ignatov, M.; Kohlstedt, H.
IEEE International Symposium on Circuits and Systems (ISCAS) 1066, 1069 (2014)

Resistive switching in lateral juctions with nanometer separated electrodes
Ziegler, M., Harnack, O., Kohlstedt, H.
Solid-State Electronics Volume: 92, p. 24 - 27 (2014)

Empirical model for the effective electron mobility in silicon nanowires
R. Granzner, V. M. Polyakov, C. Schippel, and F. Schwierz
IEEE Trans. Electron Devices 61, 3601-3607 (2014).

Two-dimensional materials for electronic applications
M. C. Lemme, L. Li, T. Palacios, and F. Schwierz
Invited paper
MRS Bulletin 39, 711-718 (2014).

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange times
J. Racko, P. Benko, I. Hotovy, L. Harmatha, M. Mikolasek, R. Granzner, M. Kittler, F. Schwierz, and J. Breza
Appl. Surf. Sci. 312, 68-73 (2014).

Electrical gating and rectification in graphene three-terminal junctions
B. Händel, B. Hähnlein, R. Göckeritz, F. Schwierz, and J. Pezoldt
Appl. Surf. Sci. 291, 87-92 (2014).

Design of GaN tri-gate HEMTs
M. Alsharef, R. Granzner, E. Ture, R. Quay, J. Racko, J. Breza, and F. Schwierz
Proc. ASDAM, 105-108 (2014).

GaN HEMTs on Si substrate with high cutoff frequency
W. Jatal, K.Tonisch, U. Baumann, F. Schwierz, and J. Pezoldt
Proc. ASDAM, 117-120 (2014).

Model of coupled defect level recombination with participation of multiphonons
J. Racko, R. Granzner,, P. Benko, M. Mikolasek, L. Harmatha, M. Kittler, F. Schwierz, and J. Breza
Proc. ASDAM, 185-188 (2014).

Electron mobility in Si nanowire MOSFETs
R. Granzner and F. Schwierz
Invited talk
Proc. ICSICT, Guilin, China (2014).

Carbon nanomaterials – A friendly critic's perspective
F. Schwierz
Invited talk
ITRS ERD Emerging Logic Assessment Workshop, Albuquerque, NM, USA (2014).

Prospects and opportunities of 2d crystals beyond graphene
F. Schwierz
Keynote
Technical Exchange Meeting on 2D Atomic Sheets Beyond Graphene, Army Research Labs, Adelphi, MD, USA (2014).

Two-dimensional materials and their application in transistors
F. Schwierz
Inited talk
Book of Abstracts Flatlands Beyond Graphene, Dublin, Ireland, 55 (2014)

Graphene-based nanoelectronics
F. Schwierz
Invited talk
Book of Abstract Microelectronics Workshop, Istanbul, Turkey, 36-39 (2014)

New model of coupled defect level recombination
J. Racko, J. Jakus, R. Granzner, M. Kittler, F. Schwierz, L. Harmatha, and J. Breza
Proc. EDS'14 IMAPS CS&SK Int. Conf., 32-36, Brno, Czech Republic (2014).

RF graphene transistors
F. Schwierz
Keynote
Book of Abstract GigaHertz Symposium, Göteborg, Sweden, 20 (2014)

The prospects of two-dimensional layered materials in electronics
F. Schwierz
Invited talk
Edgar Luescher Seminar, Klosters, Switzerland (2014)

MoSeS device simulations
F. Schwierz
Invited talk
Book of Abstracts CECAM Workshop Two-dimensional inorganic materials (2DIM): Property simulations from band structure to devices, Lausanne, Switzerland, 9-10 (2014).

Two-dimensional materials and their application in transistors
F. Schwierz
Invited Seminar
Universität Siegen, Germany (2014).

 

 

2013

Mimic synaptic behavior with a single floating gate transistor: A MemFlash synapse
Ziegler, M., Kohlstedt, H.
J. Appl. Phys. Volume:114 Issue:19 

Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
Soni, R., Meuffels, P., Adrian Petraru, Hansen, M., Ziegler, M., Vavra, O., Hermann Kohlstedt, H., Seok, D. S.Jeong, D. S.
Nanoscale 12598-12606, doi. 10.1039/C3NR03993E

Towards artificial neurons and synapses: a materials point of view
Jeong, Doo Seok; Kim, Inho; Ziegler, Martin; Kohlstedt, H..
RSC Adv. Volume: 3 Issue: 10 Pages: 3169-3183

An electronic implementation of amoeba anticipation
Ziegler, M; Ochs, K.; Hansen, M; Kohlstedt, H.
Appl. Phys. A, DOI:10.1007/s00339-013-7615-5

Theoretical investigation of tri-gate AlGaN/GaN HEMTs
M. A. Alsharef, R. Granzner, and F. Schwierz
IEEE Trans. Electron Devices 60, 3335-3341 (2013).

Graphene transistors:
Status, prospects, and problems
F. Schwierz
Invited Paper
Proc. IEEE 101, 1567-1584 (2013).

Improved empirical nonlinear compact model for studying intermodulation in HEMTs and LDMOSFETs
T. Sadi and F. Schwierz
Solid-State Electron. 81, 91-100 (2013).

Performance fluctuations in 10-nm trigate MOSFETs – Impact of the channel geometry
R. Granzner, F. Schwierz, S. Engert, and H. Töpfer
Japanese J. Appl. Phys. 52, 04CC19 (2013).

AlGaN/GaN based HEMTs on SiC/Si substrates: Influences on high frequency performance
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, and J. Pezoldt
Mat. Sci. Forum 740-742, 1115-1118 (2013).

Properties of graphene side gate transistors
B. Hähnlein, B. Händel, F. Schwierz, and J. Pezoldt
Mat. Sci. Forum 740-742, 1028-1031 (2013).

Two-dimensional semiconductors for nanoelectronics – Is this the future or wishful thinking?
F. Schwierz
Invited Paper
Book of Abstracts, 140-141, ICSS, Las Vegas, USA (2013).

Transition metal dichalcogenides – A new material class for semiconductor electronics?
F. Schwierz
Invited Paper
Proc. ASICON, 527-530 (2013).

The potential and prospects of transition metal dichalcogenide transistors
F. Schwierz
Invited Paper
Book of Abstracts Flatlands beyond graphene, Bremen, Germany, 92 (2013).

Mathematische Modellierung elektrischer Rauscheinflüsse auf MOSFET-Transistoren
S. Engert, R. Granzner, F. Schwierz, and H. Töpfer
DPG-Frühjahrstagung, Jena, Germany (2013).

Mathematical analysis of random telegraph noise in low-power applications of MOSFETs
S. Engert, R. Granzner, F. Schwierz, and H. Töpfer
ISTET, Pilsen, Czech Republic (2013).

Simulation of I-V and C-V curves of metal/GaN/AlGaN/GaN heterostructures with trap-assisted tunneling
J. Racko, P. Benko, A. Grmanova, R. Granzner, F. Schwierz, L. Harmatha, and J. Breza
Proc. APCOM, 274-279 (2013).

The effect of aluminium content in metal/GaN/AlGaN/GaN heterostructures upon the tunneling current
J. Racko, A. Grmanova, P. Benko, L. Harmatha, R. Granzner, F. Schwierz, and J. Breza
Proc. Electronic Devices and Systems IMAPS CS Int. Conf., 150-154 (2013).

Transistors based on two-dimensional materials
F. Schwierz
Invited Seminar
Technische Universität Dresden, Germany (2013).

2D Electronics - Is this the future or wishful thinking?
F. Schwierz
Invited Seminar
Jacobs University
Bremen, Germany (2013).

The prospects of two-dimensional layered materials in electronics
F. Schwierz
Invited Seminar
Technische Universität Dresden, Germany (2013).

2012

Memristive operation mode of floating gate transistors: A two-terminal MemFlash-cell
Ziegler, M.; Oberlaender, M.; Schroeder, D.; et al.
Appl. Phys. Lett.  Volume: 101   Issue: 26     

An electronic version of Pavlov's dog
M. Ziegler, R. Soni, T. Patelczyk, M. Ignatow, T. Bartsch, P. Meuffels, H. Kohlstedt
Adv. Func. Mat. 143">Volume: 22   Issue: 13   Pages: 2744-2749

UV capillary force lithography for multiscale structures
M. Hansen, M. Ziegler, H. Kohlstedt, A. Pradana, M. Rädler, M. Gerken
J. Vac. Sci. Technol. B 30(3)

Side-gate graphene field-effect transistors with high transconductance
B. Hähnlein, B. Händel, J. Pezoldt, H. Töpfer, R. Granzner, and F. Schwierz
Appl. Phys. Lett. 101, 093504 (2012).

T- and Y-branch three-terminal junction graphene devices
J. Pezoldt, R. Göckeritz, B. Hähnlein, B. Händel, and F. Schwierz
Mat. Sci. Forum 717-720, 693-686 (2012).

The coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
N. Al Mustafa, R. Granzner, V. M. Polyakov, J. Racko, M. Mikolasek, J. Breza, and F. Schwierz
J. Appl.
Phys. 111, 044512 (2012).

Graphene field effect transistor improvement by graphene - silicon dioxide interface modification
J. Pezoldt, Ch. Hummel, and F. Schwierz
Physica E 44, 985-988 (2012).

Graphene transistors – Status, prospects, and problems
F. Schwierz
Micromaterials and Nanomaterials 14, 22-25 (2012).

Graphene-based FETs
F. Schwierz
Invited Paper
Proc.
ASDAM, 131-138 (2012).

Device concepts using two-dimensional electronic materials (Graphene, MoS2, etc.)
F. Schwierz and J. Pezoldt
Invited Paper
Proc. ICSICT, S04_02 (2012).

2D materials for transistors – Status and prospects
F. Schwierz
Invited talk
DARPA Workshop 2D Materials Beyond Graphene, Pont-A-Mousson, France (2012).

Graphene transistors
F. Schwierz
Invited talk
ITRS ERD Workshop, Bordeaux, France (2012).

Off-current fluctuations in 10-nm tri-gate MOSFETs – Impact of the channel geometry
R. Granzner and F. Schwierz
Proc. SSDM (2012).

Properties of graphene side gate transistors
B. Hähnlein, B. Händel, F. Schwierz, and J. Pezoldt
ECSCRM (2012).

Simulation of random telegraph noise in nanometer nMOSFET induced by interface and oxide trapped charge
A. E. Atamuratov, R. Granzner, M. Kittler, Z. Atamuratova, M. Halillaev, and F. Schwierz
NATO Advanced Research Workshop on Low-Dimensional Functional Materials, Tashkent, Uzbekistan, 2012.

The impact of changed barrier layer parameters upon tunnelling in GaN/AlGaN/GaN Schottky structures
J. Racko, M. Mikolasek, R. Granzner, N. Al Mustafa, F. Schwierz, J. Breza
Proc. ASDAM, 207-210 (2012).

Device concepts using 2D materials
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2012).

Some recent results on GaN HEMTs
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2012).

Das Potential von Graphen für die Elektronik
F. Schwierz
Invited talk
Seminarreihe Neue Materialien – Halbleiter, O. v. Guericke Universität Magdeburg, Germany (2012).

2011

Spin valve effect in single-atom contacts
M. Ziegler, N. Nèel, C. Lazo, P. Ferriani, S. Heinze, J. Kröger and R. Berndt
New Journal of Physics 13 (8), 085011

Vertical design of cubic GaN-based high electron mobility transistors
R. Granzner, E. Tschumak, M. Kittler, K. Tonisch, W. Jatal, J. Pezoldt, D. As, and F. Schwierz
J. Appl. Phys. 110, 114501 (2011).

Coupled defect level recombination in the p-n junction
J.
Racko, M. Mikolasek, P. Benko, O. Gallo, L. Harmatha, R. Granzner, and F. Schwierz
J. Electrical Eng. – Elektrotechnicky Casopis 62, 355-358 (2011).

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications
K. Tonisch, W. Jatal, F. Niebelschuetz, H. Romanus, U. Baumann, F. Schwierz, and J. Pezoldt
Thin Solid Films 520, 491-496 (2011).

Epitaxial graphene three-terminal junctions
R. Göckeritz, J. Pezoldt, and F. Schwierz
Appl. Phys. Lett. 99, 173111 (2011).

Modeling of the steady state characteristics of large-area graphene field-effect transistors
S. Thiele and F. Schwierz
J. App
l. Phys. 110, 034506 (2011).

Industry-compatible graphene transistors
F. Schwierz
Nature 472, 41-42 (2011).

Flat transistors get off the ground
F. Schwierz
Nature Nanotechnology 6, 135-136 (2011).

Analysis of leakage current mechanisms in RuO
2-TiO2-RuO2 MIM structures
J. Racko, M. Mikolasek, L. Harmatha, J. Breza, B. Hudec, K. Fröhlich, J. Aarik, A. Tarre, R. Granzner, and F. Schwierz
J. Vac. Sci. Technol. B 29, 01AC08 1-8 (2011).

Nanotechnology for telecommunications – Book review
F. Schwierz
IEEE Nanotechnol. Mag. 5, 34-38 (2011).

Side gate graphene and AlGaN/GaN unipolar nanoelectronic devices
R. Göckeritz, K. Tonisch, W. Jatal, L. Hiller, F. Schwierz, and J. Pezoldt
Advanced Materials Research 324, 427-430 (2011).

Electron and hole accumulation in InN/InGaN heterostructures
V. Lebedev, V. Polyakov, A. Knuebel, R. Aidam, L. Kirste, V. Cimalla, R. Granzner, F. Schwierz, and O.
Ambacher
Phys. Stat. Sol. C 8, DOI: 10.1002/pssc.201000441 (2011).

Graphene transistors 2011
F. Schwierz
Invited Paper
Proc. IEEE VLSI-TSA, pp. 16-17 Hsinchu, Taiwan (2011).

On the coexistence of two-dimensional electron and hole gases in GaN-based heterostructures
R. Granzner, N. Mustafa, J. Racko, M. Mikolasek, J. Breza, and F. Schwierz
Proc. APCOM, 126-129 (2011).

Graphene transistors – Status, prospects, and problems
F. Schwierz
Invited talk7. Chemnitzer Seminar Nanotechnology, Nanomaterials, and Nanoreliability, Chemnitz, Germany (2011).

Graphene transistors 2011 – Prospects and problems
F. Schwierz
Invited talk, Nanoelektronisches Frühjahrskolloquium, TU Darmstadt, Germany (2011).

Graphene – The material for future electronics?
F. Schwierz
Invited Seminar, Friedrich-Schiller-Universität, Jena, Germany (2011).

Graphen – Das Material für die Elektronik von Morgen?
F. Schwierz
Invited Talk, Fraunhofer CNT, Dresden, Germany (2011).

2010

Control of spin-polarized current in a scanning tunneling microscope by single-atom transfer
M. Ziegler, N. Ruppelt, N. Néel, J. Kröger and R. Berndt
Applied Physics Letters 96 (13) pp. 132505

Nanometer CMOS
F. Schwierz, H. Wong, and J. J. Liou
Pan Stanford Publishing, Singapore (2010).

Transport properties of InN
V. Cimalla, V. Lebedev, O. Ambacher, V. M. Polyakov, F. Schwierz, M. Niebelschütz, G. Ecke, T. H. Myers, and W. J. Schaff
In: T. D. Veal, C. F. McConville, and W. J. Schaff (eds.), Indium Nitride and Related Alloys, CRC Press, Boca Raton (2010).

Quantum effects on the gate capacitance of trigate SOI MOSFETs
R. Granzner, S. Thiele, C. Schippel, and F. Schwierz
IEEE Trans. Electron Dev. 57, 3231-3237 (2010).

Trap-assisted tunneling current in MIM structures
J. Racko, M. Mikolasek, R. Granzner, J. Breza, D. Donoval, A. Grmanova, L. Harmatha, F. Schwierz, and K. Fröhlich
Cent. Eur. J. Phys. 9, 230-241 (2010).

Graphene Transistors
F. Schwierz
Nature Nanotechnology 5, 487-496 (2010).

Impact of n-type doping on the terahertz surface emission from c-plane InN
V. M. Polyakov, V. Cimalla, V. Lebedev, and F. Schwierz
Physica status solidi A 207, 1353-1355 (2010).

Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C-SiC (001)
E. Tschumak, R. Granzner, J. K. N. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and D. J. As
Appl. Phys. Lett. 96, 253501 (2010).

Modeling of graphene metal-oxide-semiconductor field-effect transistors with gapless large-area graphene channels
S. Thiele, J. A. Schaefer, and F. Schwierz
J. Appl. Phys. 107, 094505 (2010).

Ambient and temperature dependent electric properties of backgate graphene transistors
C. Hummel, F. Schwierz, A. Hanisch, and J. Pezoldt
Physica status solidi B 247, 903-903 (2010).

Influence of the surface potential on electrical properties of AlxGa1-xN/GaN heterostructures with different Al-content: Effect of growth method
M. Köhler, S. Müller, R. Aidam, P. Waltereit, W. Pletschen, L. Kirste, H. Menner, W. Bronner, A. Leuther, R. Quay, M. Mikulla, O. Ambacher, R. Granzner, F. Schwierz, C. Buchheim, and R. Goldhahn
J. Appl. Phys. 107, 
053711 (2010).

2H-AlGaN/GaN HEMT on 3C-SiC(111)/Si(111) substrates
K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann, F. Schwierz, and J. Pezoldt
Materials Science Forum 645-648, 1219-1222 (2010).

Top gated graphene transistors with different gate insulators
J. Pezoldt, Ch.
Hummel, I. Hotovy, M. Kadlecikova, and F. Schwierz
Physica status solidi C 7, 390-393 (2010).

Graphene for electronic applications – Transistors and more
F. Schwierz
Invited Talk
Proc. IEEE BCTM, 173-179 (2010).

Graphene transistors – A new contender for future electronics
F. Schwierz
Invited Talk
Proc. ICSICT, 1202-1205 (2010).

Improved graphene properties by graphene – silicon dioxide interface manipulation
J. Pezoldt, Ch. Hummel, and F. Schwierz
EMRS Spring Meeting (2010).

Vertical design of InN field effect transistors
R. Granzner, M. Kittler, F. Schwierz, and V. M. Polyakov
Proc. ESSDERC 428-431 (2010).

A continuous physics-based electrothermal compact model for the study of non-linearities in III-V HEMTs
T. Sadi and F. Schwierz
Proc. ESSDERC 432-435 (2010).

Physics-based large-signal electrothermal compact model for the study of non-linearities in III-V HEMTs
T. Sadi and F. Schwierz
WOCSDICE, Darmstadt, Germany (2010).

Cubic AlGaN/GaN hetero-field effect transistors with normally-on and normally-off operation
D. J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, and K. Lischka
MRS Symp.
Proc. Vol. 12020, 104-108 (2010).

Analysis of leakage mechanisms in RuO2-TiO2-RuO2 MIM structures
J. Racko, M. Mikolasek, L. Harmatha, J. Breza, B. Hudec, K. Fröhlich, J. aarik, A. Tarre, R. Granzner, and F. Schwierz
Book of Abstracts WoDiM 2010.

Comparison of different permittivity impact of dielectric materials in memory transistors
D. Durackova, M. Krajmer, J. Racko, and F. Schwierz
Proc. DISEE, 175-177 (2010).

Graphenprozessierung für Transistoren: Materialanalytische Fragestellungen
R. Göckeritz, R. Koch, M. Himmerlich, M. Endlich, C. Hummel, M. A. Alsioufy, S. Krischok, J. A. Schaefer, F. Schwierz, and J. Pezoldt
Proc. Thüringer Werkstofftag, 91-98 (2010).

Graphen – Potential für die Nanoelektronik?
F. Schwierz
FAM Workshop, Freiburg, Germany (2010).

The RF & nano device research group at TU Ilmenau
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

Graphene – The electronic material of the future?
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

Ultrafast field-effect transistors – Material issues and performance trends
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

Some considerations on RF HBTs
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

GaAs-based RF FETs
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

AlGaN/GaN HEMTs
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

Devices for THz applications – Are they already available?
F. Schwierz
Invited talk
Nanjing Electron Devices Institute, Nanjing, China (2010).

Graphene – A new electronic material
F. Schwierz
Invited talk
STU Bratislava, Slovakia (2010).

Graphene transistors – The pros and cons
F. Schwierz
Invited Seminar, Fraunhofer IAF, Freiburg, Germany (2010).

 

2009

Exploring structural, electronic, magnetic and vibrational properties of nanostructures with a scanning tunneling microscope
M. Ziegler
Christian-Albrechts Universität Kiel (2009)

Local density of states from constant-current tunneling spectra
M. Ziegler, N.Néel, A. Sperl, J. Kröger and R. Berndt
Physical Review B80 (12), pp. 125402 (2009)

Linewidth of a cesium adatom resonance on Ag (111)
M. Ziegler, J. Kröger, R. Berndt, A.G. Borisov and J.P. Gauyacq
Physical Reviwe B79 (7) pp. 075401 (2009)

Low-field and high-field electron transport in zinc blende InN
V. M. Polyakov, F. Schwierz, F. Fuchs
, F. Furthmueller, and F. Bechstedt
Appl. Phys. Lett. 94, 022102 (2009).

Gate-recessed AlGaN/GaN based enhancement-mode high electron mobility transistors for high frequency operation
St. Maroldt, Chr.
Haupt, W. Pletschen, St. Müller, R. Quay, O. Ambacher, Chr. Schippel, and Frank Schwierz
Jpn. J. Appl. Phys. 48, 04C083 (2009).

Intrinsically limited mobility of the two-dimensional electron gas in Gated AlGaN/GaN and AlGaN/AlN/AlGaN heterostructures
V. M. Polyakov, F. Schwierz, I. Cimalla, M. Kittler, B. Lübbers, and A. Schober
J. Appl. Phys. 106, 023715 (2009).

The frequency limits of field-effect transistors
F. Schwierz
Invited Talk
SAFE Workshop, Veldhoven, The Netherlands (2009).

Graphene transistors – Prospects and problems
F. Schwierz
European Graphene Week, Obergurgl, Austria (2009).

Graphene transistors – Breakthrough or ballyhoo?
F. Schwierz, Ch. Hummel, and J. Pezoldt
EMRS Spring Meeting, Strasbourg, France (2009).

Ambient and temperature dependent electric properties of backgate graphene transistors
Ch. Hummel, F. Schwierz, and J. Pezoldt
EMRS Spring Meeting, Strasbourg, France (2009).

Top gated graphene transistors with different gate insulators
J. Pezoldt, Ch. Hummel, I. Hotovy, M. Kadlecikova, and F. Schwierz
ICSFI-12, Weimar, Germany (2009).

Graphene for FET channels – What are the benefits?
F. Schwierz and J. Pezoldt
Proc. 54th IWK, 223-224, TU Ilmenau, Germany (2009).

On the vertical design of cubic AlGaN/GaN HEMTs
R. Granzner, M. Zentgraf, and F. Schwierz
Proc. 54th IWK, 205-206, TU Ilmenau, Germay (2009).

2H-AlGaN/GaN HEMTs on 3C-SiC(111)Si(111) substrates
W. Jatal, K. Tonisch, R. Granzner, M. Kittler, U. Baumann, F. Schwierz, and J. Pezoldt
ICSCRM (2009).

Trap assisted tunneling current in MIM structures
J. Racko, A. Grmanova, L. Harmatha, J. Breza, D. Donoval, F. Schwierz, R. Granzner, and K. Fröhlich
Proc. Electronic Devices and Systems IMAPS CS International Conference, 111-116 (2009).

Current transport in MIM structures
J. Racko, L. Harmatha, F. Schwierz, R. Granzner, J. Breza, and K. Fröhlich
Abstract Proc. 32nd Int. Spring Seminar on Electronic Technology "Hetero System Integration – The Path to New Solutions in Modern Electronics", 256-257 (2009).

Graphene transistors – A replacement for Si MOSFETs and III-V HEMTs?
F. Schwierz
Proc. ISANN, 96-97 (2009).

Modeling of the DC and small-signal behavior of graphene MOSFETs
F. Schwierz and St. Thiele
Proc. ISANN, 75-76 (2009).

Trap assisted tunnelling current in MIM Structures
J. Racko, M. Mikolášek, A. Grmanová, L. Harmatha, J. Breza, D. Donoval, F. Schwierz, R. Granzner, and K. Fröhlich

Progress in Applied
Surface, Interface and Thin Film Science (2009).

Graphen-Bauelemente für elektronische Anwendungen: Potential und Probleme
F. Schwierz
BMBF-Fachgespräch, Bonn, Germany (2009).

Graphen für Transistoren
F. Schwierz
DGM-Fachausschuß "Materialien für elektronische Anwendungen", Treffen des Arbeitskreises "Kohlenstoffbasierte Materialien für elektronische Anwendungen", Dresden, Germany (2009).