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2018

Metamorphic and stretchable electronic systems – A Materials Assembly, and Interconnection Challenge
S. Biswas, M. Mozafari, J. Reiprich, L. Schlag, N.A. Isaac, T. Stauden, J. Pezoldt, H.O. Jacobs
pp. 64-65, In: Microsystems Technology in Germany 2018 (Mikrosystemtechnik in Deutschland 2018) (ISSN 2191-7183, trias CONSULT, Berlin, 2018).

Engineering of III-Nitride semiconductors on low temperature co-fired ceramics
J.M. Manuel, J.J. Jimenez, F.M. Morales, B. Lacroix, A.J. Santos, R. Garcia, E. Blanco, M. Dominguez, M. Ramirez, A.M. Beltran, D. Alexandrov, J. Tot, R. Dubreuil, V. Videkov, S. Andreev, B. Tzaneva, H. Bartsch, J. Breiling, J. Pezoldt, M. Fischer, J. Müller
Sci. Rep. 8 (2018) 6879.

Defects and polytype instabilities
J. Pezoldt, A.A. Kalnin,
Mater. Sci. Forum 924 (2018) 147-150.

Infrared reflectance study of the graphene/semi-insulating 6H-SiC(0001) heterostructure
M. Auge, B. Hähnlein, J. Pezoldt
Mater. Sci. Forum 924 (2018) 314-317.

MOCVD compatible atomic layer deposition process of Al2O3 on SiC and graphene/SiC heterostructures
M. Eckstein, C. Koppka, S. Thiele, Y. Mi, R. Xu, Y. Lei, B. Hähnlein, F. Schwierz, J. Pezoldt
Mater. Sci. Forum 924 (2018) 506-510.

Reconstruction of concentration profiles in heterostructures with chemically modified interfaces
V.S. Kharlamov, D.V. Kulikov, M.N. Lubov, Ch. Zgheib, H. Romanus, Yu.V. Trushin, J. Pezoldt
J. Appl. Phys. 123 (2018) 215302.

Localized collection of airborne biological hazards for environmental monitoring

J. Reiprich, M. Gebinoga, L.-P. Traue, L. Schlag, S. Biswas, M. Kaltwasser, M.C. Honecker, Th. Stauden, J. Pezoldt, A. Schober, H.O. Jacobs
Sens. Actuators, B 273 (2018) 906-915.

Radiative pumping and propagation of plexcitons in diffractive plasmonic crystals
Y. Zakharko, M. Rother, A. Graf, B. Hähnlein, J. Pezoldt, J. Zaumseil
Nano Lett. 18 (2018) 4927-4933.

Magnetron sputtered AlN layers on LTCC multilayer and silicon substrates
H. Bartsch, R. Grieseler, J. Manuel, J. Pezoldt, J. Müller
Coatings 8 (2018) 289.

Von Nanostrukturen zu metamorphen Systemen
J. Pezoldt, L. Schlag, M. Kaltwasser, S. Biswas, Th. Stauden, H.O. Jacobs
journal 10-9, Ausgabe 2 (2018) 41-42.

High quality graphene grown by sublimation on 4H-SiC(0001)
A.A. Lebedev, V.Yu. Davydov, D.Yu. Usachov, S.P. Lebedev, A.N. Smirnov, I.A. Eliseyev, M.S. Dunaevskiy, E.V. Gushchina, K.A. Bokai, J. Pezoldt
Semiconductors 52 (2018) 1882-1885.

Core–Shell Transformation-Imprinted Solder Bumps Enabling Low-Temperature Fluidic Self-Assembly and Self-Alignment of Chips and High Melting Point Interconnects
M. Kaltwasser, U. Schmidt, S. Biswas, J. Reiprich, L. Schlag, N. A. Isaac, Th. Stauden, and H.O. Jacobs
ACS Appl. Mater. Interfaces, Article ASAP, DOI:10.1021/acsami.8b12390 Publication Date (Web): November 15, 2018

Structure and Formation of Trivalent Chromium Conversion Coatings Containing Cobalt and Zinc Plated Steel
S. Hesamedini, G. Ecke, and A. Bund
J. Electrochem. Soc. 165 (10) (2018) C657-669 Synthetic Metal

Stress-adaptive meander track for stretchable electronics
S. Biswas, J. Reiprich, J. Pezoldt, M. Hein, Th. Stauden,  and H.O. Jacobs
Flex. Print. Electron. 3 (2018) 032001

2017

Effect of post-annealing treatment on the structure and luminescence properties of AlN:Tb3+ thin films prepared by radio frequency magnetron sputtering
K.Y. Tucto Salinas, L.F. Flores Escalante, J.A. Guerra Torres, R. Grieseler, T. Kups, J. Pezoldt, A. Osvet, M. Batentschuk, R. Weingärtner
Mater. Sci. Forum 890 (2017) 299-302.


High temperature grown graphene on SiC studied by Raman and FTIR spectroscopy
M. Auge, B. Hähnlein, M. Eckstein, G. Woltersdorf, J. Pezoldt
Mater. Sci. Forum 897 (2017) 727-730.

Nanostructuring of graphene on semi-insulating SiC
B. Hähnlein, M. Breiter, Th. Stauden, J. Pezoldt
Mater. Sci. Forum 897 (2017) 735-738.


Size effect of the silicon carbide Young’s modulus

B. Hähnlein, J. Kovac Jr., J. Pezoldt
Phys. Status Solidi A214 (2017) 1600390-1 - 1600390-9.

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, U. Baumann, H.O. Jacobs, F. Schwierz, J. Pezoldt
Phys. Status Solidi A214 (2017) 1600415-1 - 1600415-7.

AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, I. Hörselmann, H.O. Jacobs, F. Schwierz, J. Pezoldt
Phys. Status Solidi A214 (2017) 1600416-1 - 1600416-6.

AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, I. Hörselmann, H.O. Jacobs, F. Schwierz, J. Pezoldt
Phys. Status Solidi A214 (2017) 1600416-1 - 1600416-6.

Multispectral electroluminescence enhancement of single-walled carbon nanotubes coupled to periodic nanodisk arrays
Y. Zakharko, M. Held, A. Graf, T. Rödleimer, R. Eckstein, G. Hernandez-Sos, B. Hähnlein, J. Pezoldt, J. Zaumseil
Optics Express 25 (2017) 18092-18106.


Transport properties of graphene films grown by thermodestruction of SiC(0001) surface in argon atmosphere
S.P. Lebedev, I.A. Eliseyev, V.Yu. Davydov, A.N. Smirnov, V.S. Levitskii, M.G. Mynbaeva, M.M. Kulagina, B. Hähnlein, J. Pezoldt, A.A. Lebedev
Tech. Phys. Lett. 43 (2017) 849-852.


Metamorphic hemispherical microphone array for three-dimensional acoustics
S. Biswas, J. Reiprich, Th. Cohrs, Th. Stauden, J. Pezoldt, and H.O. Jacobs
Appl. Phys. Lett. 111, 043109 (2017)  pdfDOI: 10.1063/1.4985710

3D Metamorphic Strachable Microphone Arrays

S. Biswas, J. Reiprich, Th. Cohrs, D.T. Arboleda, A. Schöberl, M. Mozafari, L. Schlag, Th. Stauden, J. Pezoldt, and H.O. Jacobs
Adv. Mater. Technol. 2017, 1700131   pdfDOI: 10.1002/admt.201700131

Corona Assisted Ga Based Nanowire Growth on 3C-SiC (111)/Si (111) Pseudosubstrates
J. Reiprich, Th. Stauden, T. Berthold, M. Himmerlich, J. Pezoldt, H.O. Jacobs
Materials Science Forum (Volume 897), DOI: 10.4028/www.scientific.net/MSF.897.642

Selbstjustierendes Wachstum von 3D Nanobrückenverbindungen
L. Schlag, J. Reiprich, Th. Stauden, J. Pezoldt, A. Ispas, A. Bund, P. Schaaf, H.O. Jacob
S. 317-320, Proceedings MikroSystemTechnik Kongress 2017 „MEMS, Mikroelektronik, Systeme“ (ISBN 978-3-8007-4491-6), VDE Verlag HmbH, Berlin, 2017.

Lokalisierter Transprot von Schwebstoffen zu programmierbaren, mikroskopischen Sensorpunkten durch Korona-Entladung
J. Reiprich, J. Fang, S.-C. Park, L. Schlag, T. Stauden, j. Pezoldt, H.O. Jacobs
S. 578-581, Proceedings  MikroSystemTechnik Kongress 2017 „MEMS, Mikroelektronik, Systeme“ (ISBN 978-3-8007-4491-6), VDE Verlag HmbH, Berlin, 2017.

Graphene nanoribbons for electronic devices
Z. Geng, B. Hähnlein, R. Granzner, M. Auge, A.A. Lebedev, V.Y. Davydov, M. Kittler, J. Pezoldt, F. Schwierz
Ann. Physik (Berlin) 529 (2017) 1700033-1 – 1700033-15.

Low temperature epitaxial deposition of GaN on LTCC substrates

D. Alexandrov, J. Tot, R. Dubreil, F.M. Morales, J.M. Manuel, J.J. Jimienez, B. Lacroix, R. Garcia, V. Videkov, S. Andreev, B. Tzaneva, H. Bartsch, J. Pezoldt, M. Fischer, J. Mueller
P. 48-54, Proceedings of the 2017 IEEE 5th Wokshop on Wide Bandgap Power Devices and Applications (WIPDA), IEEE, Piscataway, 2017.



2016

Surface lattice resonances for enhanced and directional electroluminescence at high current densities
Y. Zakharenko, M. Held, A. Graf, T. Rödlmeier, R. Eckstein, G. Hernandez-Sosa, B. Hähnlein, J. Pezoldt, J. Zaumseil
ACS Photonics 3 (2016) 2225-2230

Approaching gas phase electrodeposition: Process and optimization to enable the self aligned growth of 3D nanobridge-based interconnects
J. Fang, L. Schlag, S.-C. Park, Th. Stauden, J. Pezoldt, P. Schaaf, H.O. Jacobs
Adv. Mater. 28 (2016) 1770-1779

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces
T. Berthold, J. Rombach, Th. Stauden, V. Polyakov, V. Cimalla, S. Krischok, O. Bierwagen, M. Himmerlich
Journal of Applied Physics 12 (2016)120 Issue 24,  pdfDOI: 10.1063/1.4972474

Deformable printed circuit boards that enable metamorphic electronics
S. Biswas, A. Schöberl, M. Mozafari, J. Pezoldt, T. Stauden and  H.O. Jacobs
NPG Asia Materials 8 (2016) e336; doi:10.1038/am.2016.186

Surface Tension Directed Fluidic Self-Assembly of Semiconductor Chips across Length Scales and Material Boundaries

S. Biswas, M. Mozafari, T. Stauden and  H.O. Jacobs
Micromachines, 7(4) 54 (2016)
 pdfLink

Amplification in Graphene Nanoribbon Junctions

J. Pezoldt, B. Hähnlein, H.O. Jacobs, F. Schwierz,
Materials Science Forum, 858,1141-1144.

Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
W.Jatal, U. Baumann, K. Tonisch, F. Schwierz, J. Pezoldt
IEEE Electron Dev., Lett. 36, 123-125 (engl.). (2015)

Simulation of 50 nm gate graphene nanoribbon transistors
C.N. Bondja, Z. Geng, R. Granzner, J. Pezoldt, F. Schwierz
Electronics 5 (2016) Issue 1, Article 3, 1-17 (engl.). (2016)

Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning microscope bending test
R. Grieseler, F. Theska, T. Stürzel, B. Hähnlein, M. Stubenrauch, M. Hopfeld, T. Kups, J. Pezoldt, P. Schaaf
Thin Solid Films 604 (2016) 85-89 (engl.). (2016)

Heteropolytypic superlattices
J. Pezoldt
Mater. Sci. Forum 858 (2016) 278-282 (engl.). (2016)

Concentration profile simulation of SiC/Si heterostructures
J.Pezoldt, V.S. Kharlamov, D.V. Kulikov, M.N. Lubov, Y.V. Trushin

Mater. Sci. Forum 858 (2016) 501-504 (engl.). (2016)

Broadband tunable, polarization-selective and directional emission of (6,5) carbon nanotubes coupled to plasmonic crystals

Y. Zakharenko, A. Graf, S.P. Schießl, B. Hähnlein, J. Pezoldt, M.C. Gather, J. Zaumseil
Nano Lett. 16 (2016) 3278-3284 (engl.). (2016)

Amplification in Graphene Nanoribbon Junctions
J. Pezoldt, B. Hähnlein, H.O. Jacobs, F. Schwierz
Mater. Sci. Forum 858, 1141-1144. Trans Tech Publications (2016)

Tri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates

W. Jatal, U.Baumann, H.O. Jacobs, F.Schwierz,J. Pezoldt

Mater. Sci. Forum 858 (2016) 1174-1177 (engl.). (2016)

Planar nanowire transistors from two-dimensional materials
B. Hähnlein,  M.A. Alsioufy,· M. Lootze, H.O. Jacobs, F. Schwierz, J. Pezoldt
Materials Science in Semiconductor Processing, 42, 183-187. Pergamon (2016)



2015

Approaching Roll-to-Roll Fluidic Self-Assembly: Relevant Parameters, Machine Design and Application
S.-C Park, J. Fang, S. Biswas, M. Mozafari, T. Stauden and  H.O. Jacobs
IEEE Micro, PP (99) (2015)


Approaching Gas Phase Electrodeposition: Process and Optimization to Enable the Self-Aligned Growth of 3D Nanobridge-Based Interconnects

J. Fang, S.-C. Park, L. Schlag, and H. O. Jacobs
Adv. Mater., 28(9) (2015)

Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared by femtosecond direct laser writing and interference lithography [Invited]

S. Bagheri, Ch. M. Zgrabik, T. Gissibl, A. Tittl, F. Sterl, R. Walter, S. De Zuani, A. Berrier, Th. Stauden, G. Richter, E. L. Hu, and H. Giessen
Optical Materials Express  Vol. 5,   Issue 11,   pp. 2625-2633  (2015)
Link

Planar nanowire transistors from two-dimensional materials
B. Hähnlein,  M.A. Alsioufy,· M. Lootze, H.O. Jacobs, F. Schwierz, J. Pezoldt Materials Science in Semiconductor Processing 07/2015 IN PRESS

Millimeter Thin and Rubber-Like Solid-State Lighting Modules Fabricated Using Roll-to-Roll Fluidic Self-Assembly and Lamination
S.-C Park, S. Biswas, J. Fang, M. Mozafari, T. Stauden and  
H.O. Jacobs
(2015). Adv. Mater., 27: 3661–3668. Link

High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
W. Jatal, U. Baumann, K. Tonisch, F. Schwierz, J. Pezoldt
IEEE Electron Dev. Lett. 36 (2015) 123-125.

Ge addition during 4H-SiC epitaxial growth by CVD: mechanism of incorporation
V. Souliere, K. Alassaad, F. Cauwet, H. Peyre, T.Kups, J. Pezoldt, P. Kwasnicki, G. Ferro
Mater. Sci Forum, Silicon Carbide and Related Materials 2014 (ECSCRM2014), 821-823 (2015) 115-120.

Mechanical properties and residual stress of thin 3C-SiC(100) films determined using MEMS structures
B. Hähnlein, M. Stubenrauch, J. Pezoldt,
Mater. Sci Forum, Silicon Carbide and Related Materials 2014 (ECSCRM2014), 821-823 (2015) 281-284.

Two-dimensional materials and their prospects in transistor electronics
F. Schwierz, J. Pezoldt, R. Granzner
Nanoscale 7 (2015) 8261-8283

Localized collection of airborne analytes: A transport driven approach to improve the response time of existing gas sensor designs including SERS based detection of small molecules
J. Fang, S.-C. Park, L. Schlag, Th.
Stauden, J. Pezoldt, H.O. Jacobs
MRS Online Proc., Symposium GG: Nanomaterials for harsh environment sensors and related electronic components – design, Synthesis, cjaracterization and utilization, Vol. 1746 (2015) Link

2014

GaN HEMTs on Si substrate with high cutoff frequency
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt,
p. 117 - 120, In: Conference Proceedings of the 10th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2014), 20th - 22nd October 2014, Smolenics Castle, Slovakia, ISBN 978-1-4799-5474-2

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs including SERS based Detection of Small Molecules
J. Fang, Se-Chul Park, L. Schlag, T. Stauden, J. Pezoldt, H. O. Jacobs
S.62-65, In: GMM-Fachberichte 81 (2014), Tagungsband der 5. GMM Workshop “Mikro-Nano-Integration”

Active Matrix-Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger
J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J.  Pezoldt and H. O. Jacobs
Print. Adv. Mater., 26: 7600–7607. http://dx.doi.org/10.1002/adma.201402589

Self‐Assembly: A First Implementation of an Automated Reel‐to‐Reel Fluidic Self‐Assembly Machine
Se-Chul Park, Jun Fang, Shantonu Biswas, Mahsa Mozafari, Thomas Stauden, Heiko O. Jacobs
Advanced Materials 26 (34), 5890-5890 (2014)

A First Implementation of an Automated Reel-to-Reel Fluidic Self-Assembly Machine
Se-Chul Park, Jun Fang, Shantonu Biswas, Mahsa Mozafari, Thomas Stauden and Heiko O. Jacobs
Advanced Materials (online available) (2014). Cover Picture  pdf

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs
Jun Fang, Se-Chul Park, Leslie Schlag, Thomas Stauden, Jörg Pezoldt and Heiko O. Jacobs
Advanced Functional Materials 24(24), 3706-3714 (2014).  pdf

Active Matrix‐Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger Print
J. Fang, S.C. Park, L. Schlag, T. Stauden, J. Pezoldt, H.O. Jacobs
Adv. Mater., 26, 7600–7607 (2014)

Size effect of Young's modulus in AlN thin layers
B. Hähnlein, P. Schaaf, J. Pezoldt
Journal of Applied Physics 116 (12), 124306 (2014)

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition
K. Alassaad, V. Soulière, F. Cauwet, H. Peyre, D. Carole, P. Kwasnicki, S. Juillaguet, T. Kups, J. Pezoldt, G. Ferro
Acta Materialia 75, 219-226 (2014)

Densification of Thin Aluminum Oxide Films by Thermal Treatments
V. Cimalla, M. Baeumler, L. Kirste, M. Prescher, B. Christian, T. Passow, F. Benkhelifa, F. Bernhardt, G. Eichapfel, M. Himmerlich, S. Krischok, J. Pezoldt
Mater.Sci. Applications,5 (2014) 628-638

Mechanical Properties and Residual Stress of Thin 3C-SiC (111) Films Determined Using MEMS Structures
B. Hähnlein, M. Stubenrauch, S. Michael, J. Pezoldt
Materials Science Forum 778, 444-448 (2014)

Hydrogen Effects in ECR-Etching of 3C-SiC (100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt
Materials Science Forum 778, 730-733 (2014)

Nanostructured plasma etched, magnetron sputtered nanolaminar Cr< sub> 2</sub> AlC MAX phase thin films
R. Grieseler, B. Hähnlein, M. Stubenrauch, T. Kups, M. Wilke, M. Hopfeld, J. Pezoldt, P. Schaaf
Applied Surface Science 292, 997-1001 (2014)

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs
J. Fang, S.C. Park, L. Schlag, T. Stauden, J. Pezoldt, H.O. Jacobs
Adv. Funct. Mater. 24 (2014) 3706-3714

Cubic GaN/AlN multi‐quantum wells grown on pre‐patterned 3C‐SiC/Si (001)
R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J.K.N. Lindner
physica status solidi (c) 11 (2), 265-268 (2014)

Side gate AlGaN/GaN FET on silicon and sapphire
L. Hiller, K. Tonisch, J. Pezoldt
physica status solidi (c) 11 (2), 280-283 (2014)

AlGaN based MEMS structures
B. Hähnlein, K. Tonisch, G. Ecke, R. Grieseler, S. Michael, P. Schaaf, J. Pezoldt
physica status solidi (c) 11 (2), 239-243 (2014)

Electrical gating and rectification in graphene three-terminal junctions
B. Händel, B. Hähnlein, R. Göckeritz, F. Schwierz, J. Pezoldt
Applied Surface Science 291, 87-92 (2014)

Cubic GaN/AlN multi‐quantum wells grown on pre‐patterned 3C‐SiC/Si (001)
R.M. Kemper, C. Mietze, L. Hiller, Th. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J.K.N. Lindner
physica status solidi (c) 11 (2), 265-268 (2014)

Improvement of P3HT–ICBA solar cell photovoltaic characteristics due to the incorporation of the maleic anhydride additive: P3HT morphology study of P3HT–ICBA and P3HT–ICBA–MA films by means of X-band LESR
A. Konkin, U. Ritter, P. Scharff, M. Schrödner, S. Sensfuss, A. Aganov, V. Klochkov, G. Ecke
Synthetic Metals 197, 210-216 (2014)

Multifrequency X, W-band ESR study on photo-induced ion radical formation in solid films of mono-and di-fullerenes embedded in conjugated polymers
A. Konkin, U. Ritter, P. Scharff, G. Mamin, A. Aganov, S. Orlinskii, V. Krinichnyi, DAM Egbe, G. Ecke, H. Romanus
Synthetic Metals 197, 210-216 (2014)

Influence of Thermal Annealing on PCDTBT: PCBM Composition ProfilesO. Synooka, K.‐R. Eberhardt, C. R. Singh, F. Hermann, G. Ecke, B. Ecker, E. von Hauff, G. Gobsch, H. Hoppe
Advanced Energy Materials 4 (5) (2014)

AlGaN based MEMS structures
B. Hähnlein, K. Tonisch, G. Ecke, R. Grieseler, S. Michael, P. Schaaf, J. Pezoldt
physica status solidi (c) 11 (2), 239-243 (2014)

2013

Properties of Graphene Side Gate Transistors
B. Hähnlein, B. Händel, F. Schwierz, J. Pezoldt
Materials Science Forum 01/2013; 740-742:1028-1031.

AlGaN solution growth on 3C-SiC(111)/Si(111) pseudosubstrates
K. Tonisch, R. Benzig, G. Ecke, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 103-106

Kinetic Monte Carlo simulation of impurity effects on nucleation and growth of SiC clusters on Si(100)
M.N. Lubov, J. Pezoldt, Yu.V. Trushin
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 393-396

Properties of Graphene Side Gate Transistors
B. Hähnlein, B. Händel, F. Schwierz, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 1028-1031

AlGaN/GaN based HEMTs on SiC/Si-substrates: Influences on high frequency performance
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 1115-1118

SiC/Si speudosubstrates for AlGaN nanoelectronic devices

L. Hiller, K. Tonisch, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 1119-1122

AlGaN/GaN three-terminal junction devices for rectification and transistor applications on 3C-SiC/Si pseudosubstrates
L. Hiller, J. Pezoldt
IEEE Trans. Electron Devices 60 (2013) 3047-3052

Verspannungsanalyse mit Raman-Spektroskopie an MEMS aus Gruppe III-Nitriden
J. Pezoldt, B. Hähnlein, M. Stubenrauch, K. Tonisch, R. Grieseler, L. Vanco, P. Schaaf
 In: Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 101 - 106 (dtsch.).

FTIR-Ellipsometrie an Mischkristallen von Gruppe III-Nitriden
J. Pezoldt, K. Tonisch
In: Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 107 - 114

Ermittelung mechanischer Eigenschaften neuer Materialien mittels freistehender Balkenstrukturen R. Grieseler. M. Stubenrauch, S. Michael, J. Klaus, K. Tonisch, J. Pezoldt, P. Schaaf,
 In: Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 209 - 210

Die Herstellung haftfester Metallschichten auf PMMA-Oberflächen Th. Stauden, M. Himmerlich,A. Grewe, S. Krischock
In: Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 207 - 208

Effective collection and detection of airborne species using SERS-based detection and localized electrodynamic precipation
E.-C. Lin, J. Fang, S.-C. Park, Th. Stauden, J. Pezoldt, H.O. Jacobs
Adv. Mater. 25 (2013) 3554-3559.

Synaptic behaviour and STDP af assymetric nanoscale memristors in biohybrid systems
A. Williamson, L. Schumann, L. Hiller, F. Klefenz, I. Hoerselmann, P. Husar, A. Schober, Nanoscale 5 (2013) 7297-7303

Growth of cubic GaN on 3C-SiC/Si(001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J.K.N. Lindner
J. Cryst. Growth 378 (2013) 291-294.

Effective charge collection and identification of airborne species through electrodynamic precipitation and SERS-based detection
E.-C. Lin, J. Fang, S.-C. Park, F.W. Johnson, H.O. Jacobs
Nature Commun. 4 (2013) 1636/1-1636/8

N-type, conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischol, J. Pezoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Felix, J.M. Manuel, F.M. Morales, D. Carvalho, T. Ben, R. Garcia, G. Kolbmüller
J. Appl. Phys. 113 (2013) 033501/1- 033501/10

2012

Device Concepts Using Two_Dimensional Electronic Materials (Graphene, MoS2, etc.)
F. Schwierz, J. Pezoldt
Proc. of the 2012 IEEE 11th Intern. Conf. On Solid-State and Integrated Circuit Technology (ICSIT), (2012) 74-77,  paper S04_02.

Gas Phase Electrodeposition: A Programmable Localized Deposition Method for Rapid Combinatorial Investigation of Nanostuctured Devices and 3D Bulk Heterojunction Photovoltaic Cells
EC Lin, J Fang, H.O Jacobs
MRS Online Proceedings Library 1439 (2012)

Self-assembly and self-tiling: integrating active dies across length scales on flexible substrates
RJ Knuesel, S Park, W Zheng, H.O Jacobs
Micromech. Sys. 21 (1), 85-99

Integrated optofluidic system for monitoring particle mass concentration based planar emitter-receiver units
M. Hofmann, R. Müller, S. Stoebenau, Th. Stauden, O. Brodersen, S. Sinzinger
Appl. Optics 51 (2012) 7800-7809

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si
J. Pezoldt, D.V. Kulikov, V.S. Kharlamov, M.N. Lubov, Yu.V. Trushin
J. Comput. Theor. Nanosci. 9 (2012) 1941-1966

Graphene field effect transistor improvement by graphene-silicon dioxide interface modification
J. Pezoldt, Ch. Hummel, F. Schwierz
Physica E 44 (2012) 985-988.

Mechanical properties of cubic SiC, GaN and AlN thin films
J. Pezoldt, R. Grieseler, T. Schupp, D.J. As, P. Schaaf 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 513-516.

T- and Y-branched three-terminal junction graphene devices
J. Pezoldt, R. Göckeritz, B. Hähnlein, B. Händel, F. Schwierz
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 683-686.

ECR-etching of submicron and nanometer sized 3C-SiC(100) Mesa structures, 
L. Hiller, Th. Stauden, R. M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 901-904.

Side-gate graphene field-effect transistors with high transconductance
B. Hähnlein, B. Händel, J. Pezoldt, H. Töpfer, R. Granzner, F. Schwierz 
Appl. Phys. Lett. 101 (2012) 093504-1 - 093504-1.

Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems
R. Grieseler, J. Klaus, M. Stubenrauch, K. Tonisch, S. Michael, J. Pezoldt, P. Schaaf
Phil. Mag. 92 (2012), 3392 - 3401.

Smooth ceramic titanium nitride contacts on AlNGaN/GaN-heterostructures
C. Maus, T. Stauden, G. Ecke, K. Tonisch and J. Pezoldt
Semicond. Sci. Technol. 27 (2012) 115007

2011

Schichten über Schichten - Innovative Beschichtungen für komplexe Anwendungen
P. Schaaf, L. Spieß, Th. Kups, H. Romanus, R. Grieseler, M. Hopfeld, M. Wilke, Th. Stauden, D. Lorenz, A. Fischer
Vacuum 3 (2011) 24-32

Quantitative evaluation of strain in epitaxial 2H-AlN layers
R. Nader, J. Pezoldt
Adv. Mater. Res. 324 (2011) 213-216

Vertical design of cubic GaN-based high electron mobility transistors
R. Granzner, E. Tschumak, M. Kittler, K. Tonisch, W. Jatal, J. Pezoldt, D.As, F. Schwierz, 
J. Appl. Phys. 110 (2011) 114501-1 - 114501-8 

Epitaxial graphene three-terminal junctions
R. Göckeritz, J. Pezoldt, F. Schwierz
Appl. Phys. Lett. 99 (2011) 173111-1 - 173111-3. 
 
Polarity control of CVD grown 3C-SiC on Si(111)
J. Pezoldt, B. Schröter
Mater. Sci. Forum, 679-680 (2011), 91-94. 
 
High temperature graphene formation on capped and uncapped SiC
R. Göckeritz, D. Schmidt, M. Beleites, G. Seifert, S. Krischock, M. Himmerlich, J. Pezoldt
Mater. Sci. Forum, 679-680 (2011), 785-788. 
 
Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates
R. Nader, J. Pezoldt
Diam. Relat. Mater. 20 (2011), 717-721. 
 
Defect interactions and polytype transitions
J. Pezoldt, A.A. Kalnin
Adv. Mater. Res. 324 (2011), 217-220. 
 
Side gate graphene and AlGaN/GaN unipolar devices
R. Göckeritz, K. Tonisch, W. Jatal, L. Hiller, F. Schwierz, J. Pezoldt
Adv. Mater. Res. 324 (2011), 427-430

ESR and LESR X-band study of morphology and charge carrier interaction in
blended P3HT–SWCNT and P3HT–PCBM–SWCNT solid thin films
A. Konkin, C.Bounioux, U. Ritter, P. Scharff, E.A. Katz, A. Aganov, G. Gobsch, H. Hoppe, G. Ecke, H.-K. Roth
Syntetic Metals 161(2011) 2241-2248

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications 
K. Tonisch, W. Jatal, F. Niebelschuetz, H. Romanus, U. Baumann, F. Schwierz, J. Pezoldt 
Thin Solid Films 520 (2011)491-496 

Black luminescent silicon 
J. Pezoldt, T. Kups, M. Stubenrauch, M. Fischer 
Phys. Status Solidi C 8 (2011) 1021-1026

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications 
K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher, and M. A. Hein 
Phys. Status Solidi A 208 (2011) 357–376 

 

2010

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt,T. Stauden, O. Ambacher, and M. A. Hein
Phys. Status Solidi A  (2010) 1–20

FTIR ellipsometry of SiC heterostructures

J. Pezoldt
AIP Conf. Ser. Proc. 1292 (2010) 83-86


Property modification of 3C-SiC MEMS on Ge-modified Si(100) substrates

F. Niebelschütz, W. Zhao, K. Brueckner, K. Tonisch, M. Linß, M.A. Hein,  J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 861-864

Resonant MEMS based on cubic GaN layers
F. Niebelschütz, K. Brückner, W. Jatal, E. Tschumak, D.J. As, M.A. Hein, J. Pezoldt
Phys. Status Solidi C7(2010) 116-119

Optical properties of InN grown on Si(111) substrate
E. Sakalauskas, P. Schley, J. Räthel, T.A. Klar, R. Müller, J. Pezoldt, K.Tonisch, J. Grandal,  M.A. Sanchez-Garcia, E. Calleja, R. Viltalta-Clemente, P. Ruterana, R. Goldhahn
Phys. Status Solidi A 207 (2010) 1066-1069

Elastic properties of nanowires
C.-C. Röhlig, M. Niebelschuetz, K. Brueckner, K.Tonisch, O. Ambacher, V. Cimalla
Phys. Status Solidi B 247 (2010) 2557–2570 

AlGaN/GaN based heterostructures for MEMS and NEMS applications
V. Cimalla, C.-C. Röhlig, V. Lebedev, O. Ambacher,  K. Tonisch, F. Niebelschütz, K. Brückner, M. Hein
Solid State Phenomena 159 (2010) 27-38

Piezoelelctric actuated epitaxially grown AlGaN/GaN-resonators
F. Niebelschütz, K. Brueckner, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher, M.A. Hein
Phys. Status Solidi C 7 (2010) 1829-1831

Contribution to the quantitative analysis of ternary alloys of group III- Nitrides by Auger Spectroscopy
J. Liday, G. Ecke, T. Baumann, P. Vogrincic, J. Breza
J. Electr. Engineering 61 (1) 2010, 62-64

Cubic AlGaN/GaN Hetero-field effect transitors with normally on and normally off operation

D.J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, and K. Lischka
Mater. Res. Soc. Symp. Proc., III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, 1202 (2010) 1202-I04-08-1 - 1202-I04-08-1

Ambient and temperature dependent electric properties of backgate graphene transistors
Ch. Hummel, F. Schwierz, A. Hanisch, J. Pezoldt
Phys. Status Solidi B 245 (2010) 903-906G

Graphenprozessierung für Transistoren: Materialanalytische Fragestellungen
R. Göckeritz; R. Koch, M. Himmerlich, M. Endlich, Ch. Hummel, M.A. Alsioufy, S. Krischok, J. A. Schaefer, F. Schwierz, J. Pezoldt
In: Thüringer Werkstofftag 2010 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 2, Hrsg. L. Spiess, E. Rädlein, P. Schaaf, Universitätsverlag Ilmenau, Ilmenau 2010, S. 91 - 98

Grenzflächenmodifikation und Eigenschaften in Heterostrukturen mit großer Gitterfehlpassung
Th. Stauden, K. Tonisch, F. Niebelschütz, P. Masri, J. Pezoldt
In: Thüringer Werkstofftag 2010 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 2, Hrsg. L. Spiess, E. Rädlein, P. Schaaf, Universitätsverlag Ilmenau, Ilmenau 2010, S. 99 - 98

Structural characterization of sputterred indium oxide films deposited at room temperature
I. Hotovy, J. Pezoldt, M.Kadlecikova, T. Kups, L. Spiess, J. Breza, E. Sakalauskas, R. Goldhahn, V. Rehacek
Thin Solid Films 518 (2010) 4508 - 4511


Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
V.S. Kharlamov, D.V. Kulikov, Yu.V. Trushin, P. Nader, P. Masri, Th. Stauden, J. Pezoldt
Bulletin of the Russian Academy of Sciences: Physics, 74  (2010) 241-244

Tuning resuidual stress in 3C-SiC(100) on Si(100)
J. Pezoldt, Th. Stauden, F. Niebelschütz, M.A. Alsioufy, R. Nader, P. Masri
Mater. Sci. Forum, 645-648 (2010) 159-162

Nanostructuring techniques for 3C-SiC(100) NEMS structures
M. Hofer, Th. Stauden, I.W. Rangelow, J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 841-844

Temperature facilated ECR-etching for isotropic SiC structuring
F. Niebelschütz, Th. Stauden, K. Tonisch, J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 849-852

2H-AlGaN/GaN HEMTs on 3C-SIC(111)/Si(111) substrates
K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann, F. Schwierz, J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 1219-1222

Designing the Si(100) conversion into SiC(100) by Ge
R. Nader, F. Niebelschütz, D.V. Kulikov, V.V. Kharlamov, Yu.V. Trushin, P. Masri, J. Pezoldt
Phys. Status Solidi C 7 (2010) 141-144

Top gated graphene transistors with different gate insulators
J. Pezoldt, Ch. Hummel, A. Hanisch, I. Hotovy, M. Kadlecikova, F. Schwierz,
Phys. Status Solidi C 7 (2010) 390-393


2009

Resonant Piezoelectric AlGaN/GaN MEMS Sensors in Longitudinal Mode Operation
K. Brückner, F. Niebelschütz, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher und M. A. Hein,
Proceeeding der IEEE MEMS Conference, Sorrento, Italien, 25.-29.01.2009

Parameter identification of piezoelectric AlGaN/GaN beam resonators by dynamic measurements
S. Michael, K. Brueckner, F. Niebelschuetz, K. Tonisch, C. Schaeffel
EUROSIME 2009: Thermal, mechanical and multi-physics simulation and experiments in micro-electronics and microsystems, Eds. L.J. Ernst, G.Q. Zhang, P. Rodgers, C. Bailey, O. de Saint Leger, IEEE, New York, (2009) 591-594

Transport properties of InN
V. Cimalla, V. Lebedev, O. Ambacher, V.M. Polyakov, F. Schwierz, M. Niebelschütz,  G. Ecke, T.H. Myers, W.J. Schaff
Indium nitride and related alloys, Eds. T.D. Veal, C.F. McConville, W.J. Schaff, CRC Press, Boca Raton, (2009) 139-180

InN nanocolumns
J. Grandal, M.A. Sanchez-Garcia, E. Calleja, S. Lazic, E. Gallardo, J.M. Calleja, E. Luna, A. Tampert, M. Niebelschütz, V. Cimalla, O. Ambacher
In: Indium nitride and related alloys, Eds. T.D. Veal, C.F. McConville, W.J. Schaff, CRC Press, Boca Raton, (2009) 599-615

Formation of different carbon phases
J. Pezoldt
Material Sci. Forum,  615-617 (2009) 227-230

SIMS investigation of Gex(4H-SiC)1-x solid solutions synthesized by Ge-ion implantation up to x=0.2
H. Peyre,  J. Pezoldt, M.Voelskow, W.Skorupa, J.Camassel 
Material Sci. Forum,  615-617 (2009) 465-468

Performance modification of SiC MEMS
F. Niebelschuetz, K. Brueckner, V. Cimalla, M.A. Hein,  J. Pezoldt
Material Sci. Forum, 615-617 (2009) 621-624

Comparative study of 3C-GaN grwon on semi-insulating 3C-SiC/Si(100) substrates
E. Tschumak, K.Tonisch, J. Pezoldt, D.J.As 
Material Sci. Forum, 615-617 (2009) 943-946

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing
M. Voelskow, W. Skorupa,  J. Pezoldt, Th. Kups 
Nucl. Instr. Meth. Phys. Res. B 267 (2009) 1269-1272

Nanostructured indium oxide deposited at room temperature
I. Hotovy, T. Kups, M. Predanocy, J. Hotovy , A. Wilke, V. Rehacek, J. Pezoldt, L. Spieß 
Proc. of the 54th International Scientific Colloquium (54. IWK), Technische Universität Ilmenau, September  7th - 10th, 2009, p. 5.2.1 - 5.2.4

Polarity determination and control of SiC grown on Si
J. Pezoldt, Th. Kups, Th. Stauden, B. Schröter
Mater. Sci. Eng. B 165 (2009) 28-33

Properties of surface and interface structure of AlN/3C-SiC/Ge/Si(111)
R. Nader, M. Kazan, Ch. Zgheib, J. Pezoldt, P. Masri 
J. Cryst. Growth 311 (2009) 4665-4669

Effect of annealing on the properties of Indium-Tin-Oxynitride Films as ohmic contactsfor GaN-based optoelectronics devices
M. Himmerlich, M. Koufaki, G. Ecke, Ch. Mauder, V. Cimalla, J.A. Schäfer, A. Kondalis, N.T. Pelekanos, M. Modreanu, S. Krischok and E. Aperathitis
Appl. Mat. Int. 1(2009) 1451-1456

Performance Modification of SiC MEMS
F. Niebelschütz, K. Brückner, V. Cimalla, M.A. Hein and J. Pezoldt
Materials Science Forum 615-617 (2009) 621-624

Buckling stabilization and stress reduction in SiC on Si by i-FLASiC processing
A. Andreadou, J. Pezoldt, Ch. Förster , E.K. Polychroniadis, M. Voelskow, W. Skorupa
Material Sci. Forum  600-603 (2009) 239 - 242

SiC polytype stability influenced by Ge impurities
R. Nader , M. Kazan , E. Moussaed, Ch. Zgheib, B. Nsouli, J. Pezoldt , P. Masri
Material Sci. Forum  600-603 (2009) 533 - 536

Structure and lattice location of Ge implanted 4H-SiC
Th. Kups, K. Tonisch, M. Voelskow, W. Skorupa, A.L. Konkin, J. Pezoldt
Material Sci. Forum  600-603 (2009) 623 - 626

Isotropic etching of SiC
Th. Stauden, F. Niebelschütz, K. Tonisch, V. Cimalla, G. Ecke, Ch. Haupt, and J. Pezoldt
Materials Science Forum 600-603 (2009) 651-654

2008

Nitrides based sensors
V. Cimalla, V. Lebedev, S. Linkohr, C.C. Röhlig, I. Cimalla, B. Lübbers, K. Tonisch, K. Brückner, F. Niebelschütz, M. Hein, and O. Ambacher
Proc. HETECH 2008, edited by Gaudenzio Meneghesso, pp. 33-40


Sensing applications of micro- and nanoelectromechanical resonators
F. Niebelschütz, V. Cimalla, K.Brückner, R.Stephan, K.Tonisch, M.A. Hein und O. Ambacher
Proc. IMechE Vol. 221 Part N: J. Nanoengineering and Nanosystems (2008) 59-65.

Structural and photoconductive properties of MBE and MOCVD grown III-nitride double-heterostructures
S. Hauguth-Frank, V. Lebedev, K. Tonisch, H. Romanus, T. Kups, H.J. Buchner, G. Jaeger, O. Ambacher, A. Schober
Mater. Res. Soc. Symp. Proc. 1076 (2008) 155-161

Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide
Ch.Y. Wang, Y. Dai, J. Pezoldt, B. Lu , Th. Kups, V. Cimalla, O. Ambacher 
Crystal Growth & Design, 8 (2008) 1257-1260

Surface morphology of Ge-modified 3C-SiC/Si films
R. Nader, M. Kazan, E. Moussaed, Th.Stauden, M. Niebelschütz , P. Masri, J. Pezoldt
Surf. Interface Anal.  40 (2008) 1310-1317

SiC polytypes process affected by Ge predeposition on Si(111) substrates
R. Nader, E. Moussaed , M. Kazan, J. Pezoldt, P. Masri Superlattices and Microstructures  44 (2008) 191-196

Buried melting in germanium implanted silicon by millisecond flash lamp annealing
M. Voelskow, R. Yankow , W. Skorupa, J. Pezoldt, Th. Kups  Appl. Phys. Lett.  93  (2008) 151903-1 - 151903-3

Study of Si and C Adatoms and SiC Clusters on the Silicon Surface by The Molecular Dynamics Method V.S. Kharlamov , Yu. V. Trushin , E.E. Zhurkin , M.N. Lubov, J. Pezoldt
Technical Physics  53 (2008) 1490-1503

Two-dimensional electron gas based actuation of piezoelectric AlGaN/GaN microelectromechanical resonators

K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost, V. Cimalla, O. Ambacher, R. Stephan, and M. A. Hein
Appl. Phys. Lett. 93 (2008) 173504.

Piezoelectric actuation of (GaN/)AlGaN/GaN heterostructures
K. Tonisch, C. Buchheim, F. Niebelschütz, A. Schober, G. Gobsch, V. Cimalla, O. Ambacher, and R. Goldhahn
J. Appl. Phys. 104 (2008) 084516.

Electronic structure of GaN(0001)-2x2 thin films grown by PAMPE
R. Gutt, P. Lorenz, K. Tonisch, M. Himmerlich, J.A. Schäfer and S. Krischok
phys. stat. sol. (RRL), 1-3 (2008) pssr.200802146

Investigation of NiOx -based contacts on p-GaN
J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vincze, I. Vavra, A. Satka, G. Ecke, A. Bonanni, J. Breza, C. Simbrunner, B. Plochberger
J. Mater Sci: Mater Electron 19 (2008) 855-862 DOI 10.1007/s 10854-007-9520-1

The Role of Ti/Al Ratio in Nanolayered Ohmic Contacts for GaN/AlGaN HEMTs
L. Kolaklieva, R. Kakanakov, V. Cimalla, St. Maroldt, F. Niebelschütz, K. Tonisch, O. Ambacher
Proc. 26th International Conference on Microelctronics (Miel 2008), Nis, Serbia 11-14th May 2008

Characterization of GaN-based lateral polarity heterostructures
P. Lorenz, V. Lebedev, F. Niebelschütz, S. Hauguth, O. Ambacher, J. A. Schaefer, and S. Krischok
phys. stat. sol. (c) 5, No. 6, (2008) 1965–1967

AlGaN/GaN – based MEMS with two-dimensional electron gas for novel sensor applications
F. Niebelschütz, V. Cimalla, K. Tonisch, Ch. Haupt, K. Brückner, R. Stephan, M. Hein and O. Ambacher
phys. stat. sol. (c) 5, No. 6, (2008) 1914–1916

Piezoelectric actuation of all-nitride MEMS
K. Tonisch, C. Buchheim, F. Niebelschütz, M. Donahue, R. Goldhahn, V. Cimalla, O. Ambacher
phys. stat. sol. (c) 5, No. 6, (2008) 1910–1913

InN/In2O3 heterostructures
Ch. Y. Wang, V. Cimalla, V. Lebedev, Th. Kups, G. Ecke, S. Hauguth, O. Ambacher, J.G. Lorenzo, F. M. Morales, and D. Gonzales
phys. stat. sol. (c) 5 (2008) 1627–1629
DOI: 10.1002/pssc.200778549


Ozone and UV assistend oxidation of InN surfaces
G. Ecke, Ch. Y. Wang, V. Cimalla, and O. Ambacher
phys. stat. sol. (c) 5 (2008) 1603–1605
DOI: 10.1002/pssc.200778519


Nanomechanics of Single Crystalline Tungsten Nanowires
V. Cimalla, C.-C. Röhlig, J. Pezoldt, M. Niebelschütz, O. Ambacher, K. Brückner, M. Hein, J. Weber, S. Milenkovic, A. J. Smith, A. W. Hassel
Journal of Nanomaterials 2008 (2008) 638947 DOI:10.1155/2008/638947

Space charged region in GaN and InN nanocolumns investigated by Atomic Force Microscopy
M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, K.-H. Franke, J. Ristic, J. Grandal, M.A. Sánchez-García and E. Calleja
phys. stat. sol. (c) 5 (2008) 1609–1611

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process
J. Pezoldt, R. Nader, Ch. Zgheib, G. Ecke, R. Pieterwas, Th. Stauden, Th.Wöhner and P. Masri
Surf. Interface Anal. 40 (2008) 794-797
DOI: 10.1002/sia.2618

Stress and stress monitoring in SiC–Si heterostructures
J. Pezoldt, R. Nader, F. Niebelschütz, V. Cimalla, T. Stauden, Ch. Zgheib and P. Masri
phys. stat. sol. (a) 205 (2008) 867-871

Sensing applications of micro- and nanoelectromechanical resonators
F. Niebelschütz, V. Cimalla, K.Brückner, R.Stephan, K.Tonisch, M.A. Hein und O. Ambacher
Proceedings of the Institution of Mechanical Engineers, Part N, Journal of Nanoengineering and Nanosystems, accepted, 2008

A novel GaN-based multiparameter sensor system for biochemical analysis

B. Lübbers, G. Kittler, P. Ort, S. Linkohr, D. Wegener, B. Baur, M. Gebinoga, F. Weise, M. Eickhoff, S. Maroldt, A. Schober and O. Ambacher
phys. stat. sol. (c), accepted, 2008
 
Electric field distribution in GaN/AlGaN/GaN heterostructures with 2DEG and 2DHG

C. Buchheim, R. Goldhahn, G. Gobsch, K. Tonisch, V. Cimalla, F. Niebelschütz, O. Ambacher
Appl. Phys. Lett. 92 (2008) 013510.

2007

Ion beam synthesis of 4H-(Si1-xC1-y )Gex+y solid solutions
J.Pezoldt , Th.Kups , M.Voelskow , W.Skorupa
phys. stat. sol. (a) 204 (2007) 998 - 1101

Local control of SiC polytypes
J.Pezoldt , F.M.Morales , A.A.Kalnin
phys. stat. sol. (a) 204 (2007) 1056 - 1062

Deconvolution of atomic force measurements in special modes - methodology and application
E. Sparrer, T. Machleidt, R. Nestler, K.-H. Franke, M. Niebelschütz
Computer science meets automation; Vol. 2: . - Ilmenau : Univ.-Verl. Ilmenau. - 2007, S. 245-250

AlGaN/GaN-sensors for monitoring of enzyme activity by pH-measurements

G. Kittler, A. Spitznas, B. Lübbers, V. Lebedev, D. Wegener, M. Gebinoga, F. Weise, A. Schober, and O. Ambacher
Advances in III-V Nitride Semiconductor Materials and Devices (2007) I14-03.

AlN as a piezoelectric material for integrated micro and nano sensors on silicon
T. Polster, M. Hoffmann, A. Albrecht, K. Tonisch, O. Ambacher, T. Stauden, M. Donahue, S. Michael
Smart Systems Integration 2007, Paris, VDE Verlag, S. 161-166
ISBN 978-3-8007-3009-4


Investigation of NiOx-based contacts on p-GaN
J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vince, I. Vavra, A. Satka, G. Ecke, A. Bonanni, J. Breza, C. Simbrunner, B. Plochberger
J. Mater Sci: Mater Electron (2007) 10854

Electrically characterization of Group III-Nitride nanocolumns with Scanning Force Microscopy
M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, K.-H. Franke, J. Ristic, J. Grandal, M.A. Sánchez-García and E. Calleja
Modern Research and Educational Topics in Microscopy, Editors: A. Méndez-Vilas and J. Díaz (2007), pp. 560-567

Analysis of nanostructures by means of Auger electron spectroscopy
G. Ecke, V. Cimalla, K. Tonisch, V. Lebedev, H. Romanus, O. Ambacher, and J. Liday
J. Electrical Eng. 58 (2007) 301-306

Ionenimplantierte Titanoberflächen für den Hartgewebeersatz
C. Blank, S. Krischok, R. Gutt, M. Engel, J. A. Schäfer, J. Schawohl, L. Spieß, Ch. Knedlik, G. Ecke, F. Schrempel, E. Hüger, G. Hildebrand, K. Liefeith
BIOmaterialien 8 (2007) 285-292

Group III nitride and SiC based MEMS and NEMS:
materials properties, technology and applications
V. Cimalla, J. Pezoldt and O. Ambacher
J. Phys. D: Appl. Phys. 40 (2007) 6386–6434

Strain- and pressure-dependent RF response of microelectromechanical resonators for sensing applications

K. Brueckner, V. Cimalla, F. Niebelschütz, R. Stephan, K. Tonisch, O. Ambacher, and M.A. Hein
J. Micromech. Microeng. 17 (2007) 2016-2023

Surface composition and electronic properties of indium tin oxide and oxynitride films
M. Himmerlich, M. Koufaki, Ch. Mauder, G. Ecke, V. Cimalla, J. A. Schäfer, E. Aperathitis, S. Krischok
Surf. Sci. 601 (2007) 4082-4086

Fabrication of one-dimensional "trenched" GaN nanowires and their interconnections
V. Lebedev, D. Cengher, M. Fischer, K. Tonisch, V. Cimalla, M. Niebelschütz, and O. Ambacher
phys. stat. sol. (a) 204 (2007) 3387-3391

Conduction-band dispersion relation and electron effective mass in III-V and II-VI zinc-blende semiconductors
S. Shokhovets, O. Ambacher, G. Gobsch
Phys. Rev. B 76 (2007) 125203

Fully unstrained GaN on sacrificial AlN layers by nano-heteroepitaxy
K. Tonisch, V. Cimalla, F. Niebelschütz, H. Romanus, M. Eickhoff, O. Ambacher
phys. stat. sol. (c) 4 (2007) 2248-2251

Integration of In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Ch.Y. Wang, V. Cimalla, Th. Kups, C.-C. Röhlig, Th. Stauden, O. Ambacher, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, K. Köhler, and J. Wagner
Appl. Phys. Lett. 91 (2007) 103509 (also: Virtual Journal of Nanoscale Science & Technology 16 (2007) Issue 12)

Nanoelectromechanical devices for sensing applications
V. Cimalla, F. Niebelschütz, K. Tonisch, Ch. Foerster, K. Brueckner, I. Cimalla, T. Friedrich, J. Pezoldt, R. Stephan, M. Hein, O. Ambacher
Sens. Actuat. B 126 (2007) 24-34


Degradation process in the cellulose/N-methylmorpholine-N-oxide system studied by HPLC and ESR. Radical formation/recombination kinetics under UV photolysis at 77 K
A. Konkin, F. Wedler, F. Meister, H.-K. Roth, A. Aganov, O. Ambacher
Cellulose (2007) 457-468

Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition

Ch. Y. Wang, V. Cimalla, T. Kups, C. Röhlig, H. Romanus, V. Lebedev, J. Pezoldt, T. Stauden, O. Ambacher
J. Appl. Phys. 102 (2007) 044310 (also: Virtual Journal of Nanoscale Science & Technology 16 (2007) Issue 11)

Using defined structures on very thin foils for characterizing AFM tips
T. Machleidt, K.-H. Franke, H. Romanus, V. Cimalla, M. Niebelschütz, L. Spieß and O. Ambacher
Ultramicroscopy 107 (2007) 1086-1090

Analysis of nanocrystalline films on rough substrates

V. Cimalla, T. Machleidt, L. Spieß, M. Gubisch, I. Hotovy, H. Romanus, and O. Ambacher
Ultramicroscopy 107 (2007) 989–994

Morphology and surface electronic structure of MBE grown InN

M. Himmerlich, S. Krischok, V. Lebedev, O. Ambacher and J. A. Schaefer
J. Cryst. Growth 306 (2007) 6-11

Evidence of electron accumulation at nonpolar surfaces of InN nanocolumns
E. Calleja, J. Grandal, M.A. Sanchez-Garcia, M. Niebelschütz, V. Cimalla, O. Ambacher
Appl. Phys. Lett. 90 (2007) 262110

Structural studies of single crystalline bixbyte In2O3 films epitaxially grown on InN(0001)

Ch.Y. Wang, V. Lebedev, V. Cimalla, Th. Kups, K. Tonisch, O. Ambacher
Appl. Phys. Lett. 90 (2007) 221902 (also: Virtual Journal of Nanoscale Science & Technology 15 (2007) Issue 23)
 
Effect of surface oxidation on electron transport in InN thin films
V. Lebedev, Ch. Y. Wang, V. Cimalla, S. Hauguth, T. Kups, M. Ali, G. Ecke, M. Himmerlich, S. Krischok, J. A. Schäfer, and O. Ambacher, V. M. Polyakov and F. Schwierz
J. Appl. Phys. 101 (2007) 123705

NOx sensing properties of In2O3 thin films grown by MOCVD

M. Ali, Ch. Y. Wang, C.-C. Röhlig, V. Cimalla, Th. Stauden, and O. Ambacher
Sens. Actuat. B, submitted (2007)

Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients
J. Liday, I. Hotovy, H. Sitter, K. Schmidegg, P. Vogrincic, A. Bonnani, J. Breza, G. Ecke, I. Vavra
Appl. Surf. Sci. 235 (2007) 3174-3180

Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si

J. Pezoldt, Ch. Förster, Th. Stauden, V. Cimalla F. M. Morales, C. Zgheib, P. Masri, and O. Ambacher
Mater. Sci. For. 556-557 (2007) 203-206

FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
J. Pezoldt, Ch. Förster, V. Cimalla, F. Will, R. Stephan, K. Brückner, M. Hein, and O. Ambacher
Mater. Sci. For. 556-557 (2007) 283-266

Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers
J. G. Lozano, F. M. Morales, R. García, V. Lebedev, V. Cimalla, O. Ambacher, and D. González
phys. stat. sol. (c) 4 (2007) 1454-1457

Dielectric function and Van Hove singularities for In-rich Inx Ga1-xN alloys: Comparison of N- and metal-face materials

P. Schley, R. Goldhahn, A. T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, H. Lu, W. J. Schaff, M. Kurouchi, Y. Nanishi, M. Rakel, C. Cobet, and N. Esser
Phys. Rev. B 75 (2007) 205204.

High efficient terahertz emission from InN surfaces

V. Cimalla, B. Pradarutti, G. Matthäus, C. Brückner, S. Riehemann, G. Notni, S. Nolte, A. Tünnermann, V. Lebedev and O. Ambacher
phys. stat. sol. (b) 244 (2007) 1829–1833

Formation of Si clusters in AlGaN: A study of local structure
A. Somogyi, G. M artinez-Criado, A. Homs, M. A. Hernandez-Fenollosa, D. Vantelon, O. Ambacher
Appl. Phys. Lett. 90 (2007) 181129

AlGaN/GaN biosensor-effect of device processing steps on the surface properties and biocompatibility

I. Cimalla, F. Will, K. Tonisch, M. Niebelschütz, V. Cimalla, V. Lebedev, G. Kittler, M. Himmerlich, S. Krischok, J.A. Schaefer, M. Gebinoga, A. Schober, T. Friedrich, and O. Ambacher
Sens. Actuat. B 123 (2007) 740–748

Tuning of electrical and structural properties of indium oxide films grown by metal organic chemical vapor deposition

Ch.Y. Wang, V. Cimalla, H. Romanus, Th. Kups, M. Niebelschütz, and O. Ambacher
Thin Solid Films 515 (2007) 6611–6614

Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres

K. Tonisch, F. Weise, M. Stubenrauch, V. Cimalla, G. Ecke, F. Will, H. Romanus, S. Mrotzek, H. Hofmeister, M. Hoffmann, D. Hülsenberg and O. Ambacher
Physica E 38 (2007) 40-43

Stability of GaN films under intense MeV He ion irradiation
R. Schwarz, R. Cabe, E. Morgado, M. Niehus, O. Ambacher, C.P. Marques, E. Alves
Diam. Relat. Mater. 16 (2007) 1437-1440

Reduced surface electron accumulation at InN films by ozone induced oxidation

V. Cimalla, V. Lebedev, Ch. Y. Wang, M. Ali, G. Ecke, V. M. Polyakov, F. Schwierz, O. Ambacher, H. Lu, and W. J. Schaff
Appl. Phys. Lett. 101 (2007) 152106

Electrical performance of gallium nitride nanocolumns

M. Niebelschütz, V. Cimalla, O. Ambacher, T. Machleidt, J. Ristic and E. Calleja
Physica E 37 (2007) 200-203

Nanowire-based electromechanical biomimetic sensor
K. Tonisch, V. Cimalla, F. Will, F. Weise, M. Stubenrauch, A. Albrecht, M. Hoffmann and O. Ambacher
Physica E 37 (2007) 208-211

Suspended nanowire web

V. Cimalla, M. Stubenrauch, F. Weise, M. Fischer, K. Tonisch, M. Hoffmann, and O. Ambacher
Appl. Phys. Lett. 90 (2007) 101504 (also: Virtual Journal of Nanoscale Science & Technology 15 (2007) Issue 11) and Virtual Journal of Biological Physics Research 13 (2007) Issue 5).

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik and O. Ambacher
Sens. Actuat. B 122 (2007) 182-186

Cubic InN growth on sapphire (0001) using cubic indium oxide as buffer layer

J. G. Lozano, F. M. Morales, R. García, and D. González V. Lebedev, Ch. Y. Wang, V. Cimalla, and O. Ambacher
Appl. Phys. Lett. 90 (2007) 091901

Effect of island coalescence on structural and electrical properties of InN thin films
V. Lebedev, V. Cimalla, F.M. Morales, J.G. Lozano, D. Gonzalez, Ch. Mauder, and O. Ambacher
J. Cryst. Growth 300 (2007) 50–56

Markers prepared by focus ion beam technique for nanopositioning procedures
H. Romanus, J. Schadewald, V. Cimalla, M. Niebelschütz, T. Machleidt, K.-H. Franke, L. Spiess, and O. Ambacher
Microelectron. Eng. 84 (2007) 524–527

Preparation of defined structures on very thin foils for characterization of AFM probes
H. Romanus, J. Schadewald, V. Cimalla, M. Niebelschütz, T. Machleidt, K.-H. Franke, L. Spiess, and O. Ambacher:
Microelectron. Eng. 84 (2007) 528–531

Coalescence aspects of III-nitride epitaxy
V. Lebedev, K. Tonisch, F. Niebelschütz, V. Cimalla, D. Cengher, I. Cimalla, Ch. Mauder, S. Hauguth, and O. Ambacher, F. M. Morales, J. G. Lozano, and D. González
J. Appl. Phys. 101 (2007) 054906
 
Evaluation of the influence of GaN and AlN as pseudosubstrates on the crystalline quality of InN layers
J. G. Lozano, F. M. Morales, R. García, V. Lebedev, V. Cimalla, O. Ambacher and D. González
phys. stat. sol. (c), submitted (2007).
 
Reactively sputtered InxVyOz films for detection of NOx, D2, and O2
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher
Sens. Actuators B 123 (2007) 779-783

Space charge limited electron transport in AlGaN photoconductors
V. Lebedev, G. Cherkashinin, G. Ecke, I. Cimalla, and O. Ambacher
J. Appl. Phys. 101 (2007) 033705

Dynamics of photoinduced radical pairs in poly(3-dodecylthiophene)/ fullerene composite
V.I. Krinichnyi, H.-K. Roth, S. Sensfuss, M. Schrödner, M. Al-Ibrahim
Physica E 36 (2007) 98-101

Transparent conducting indium oxide thin films grown by low-temperature metal organic chemical vapor deposition
Ch. Y. Wang, V. Cimalla, G. Cherkashinin, H. Romanus, M. Ali, O. Ambacher
Thin Solid Films 515 (2007) 2921-2925

Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts

M. Soueidan, G. Ferro, C. Jaquier, P. Godignon, J. Pezoldt, M. Lazar, B. Nsouli, Y. Monteil
Diam. Relat. Mater. 16 (2007) 37-45

2006

Untersuchung der Fluiddynamik in RTCVD Epitaxiereaktoren
Yu. P. Rainova, J. Pezoldt, A. Schenk, I. S. Tchulkov
In: Technologie der Mikroelektronik, Optoelektronik und Glasfaseroptik, Ed. Korkischko Yu. N., Moskau, 2006, MIET, p.214 - 233

Fermi level analysis of group III nitride semiconductor device structures by Auger peak position measurements

G. Ecke, M. Niebelschütz, R. Kosiba, U. Rossow, V. Cimalla, J. Liday, P. Vogrincic, J. Pezoldt, V. Lebedev, and O. Ambacher
J. Electr. Engin. 57 (2006) 354-359

5µm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
Ch. Zgheib, E. Nassar, M. Hamad, R. Nader, P. Masri, J. Pezoldt, G. Ferro
Superlattices Microstruct. 40 (2006) 638-643

Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
J. Pezoldt, Ch. Zgheib, V. Lebedev, P. Masri, O. Ambacher
Superlattices Microstruct. 40 (2006) 612-618

Effect of deposition temperature on the properties of amorphous silicon carbide thin films
J. Huran, I. Hotovy, J. Pezoldt, N.I. Balalykin, A.P. Kobzev
Thin solid Films 515 (2006) 651-653

Carbon surface diffusion and Sic nanocluster self-ordering
J. Pezoldt, Yu.V. Trushin, V.S. Kharlamov, A.A. Schmidt, V. Cimalla, O. Ambacher
Nucl. Instr. Meth. Phys. Res. B 253 (2006) 241-245

Impact of silicon incorporation on the formation of structural defects in AlN
M. Herrmann, F. Furtmayr, F.M. Morales, O. Ambacher, M. Stutzmann and M. Eickhoff
J. Appl. Phys. 100 (2006) 113531

Correlation between structural and electrical properties of InN thin films prepared by molecular beam epitaxy
V. Lebedev, F.M. Morales, V. Cimalla, J. G. Lozano, D. Gonzalez, M. Himmerlich, S. Krischok, J. A. Schäfer, O. Ambacher
Superlattices Microstruct. 40 (2006) 289-294

Piezoelectric properties of polycristalline AlN thin films for MEMS application
K. Tonisch, V. Cimalla, Ch. Förster, H. Romanus; O. Ambacher, D. Dontsov
Sens. Actuators A 132 (2006) 658-663

Simulation of quality of SiC/Si interface during MBE deposition of C on Si
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, Yu. V. Trushin, J. Pezoldt
Mater. wiss. Werkst. tech. 37 (2006) 929

Origin of n-type conductivity in nominally undoped InN
V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
Mater. wiss. Werkst. tech. 37 (2006) 924

Impact of Device Technolgy Processes on the Surface Properties and Biocompatibility of Group III Nitride Based Sensors
I. Cimalla, F. Will, K. Tonisch, M. Niebelschütz, V. Cimalla, V. Lebedev, G. Kittler, M. Himmerlich, S. Krischok, J.A. Schäfer, M. Gebinoga, A. Schober, T. Friedrich, O. Ambacher
Mater. wiss. Werkst. tech. 37 (2006) 919

Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen
M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, O. Ambacher
Mater. wiss. Werkst. tech. 37 (2006) 937

Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications
Ch.Y. Wang, V. Cimalla, O. Ambacher
Mater. wiss. Werkst. tech. 37 (2006) 945

Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J.A. Schäfer, and O. Ambacher
J. Appl. Phys. 100 (2006) 094902

Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
V. Lebedev, V. Cimalla, T. Baumann, O. Ambacher, F.M. Morales, J.G. Lozano, and D. Gonzales
J. Appl. Phys. 100 (2006) 094903

Optical emission spectroscopy during fabrication of indium -tin-oxynitride films by RF-sputtering
M. Koufaki, M. Sifakis, E. Iliopoulos, N. Pelekanos, M. Modreanu, V. Cimalla, G. Ecke, E. Aperathitis
Appl. Surf. Sci. 253 (2006) 405-408

"Anomalous" pseudodielectric function of GaN: Experiment, modelling and application to the study of surface properties
S. Shokhovets, G. Gobsch, V. Lebedev, O. Ambacher
Appl. Surf. Sci. 253 (2006) 224-227

Model for the thickness dependence of electron concentration in InN films
V. Cimalla, V. Lebedev, F.M. Morales, R. Goldhahn, and O. Ambacher
Appl. Phys. Lett. 89 (2006) 172109

Excitonic contribution to the optical absorption in zinc-blende III-V semiconductors
S. Shokhovets, G. Gobsch, and O. Ambacher
Phys. Rev. B 74 (2006) 155209

A study of hydrogen sensing performance of Pt-GaN Schottky diodes
M. Ali, V. Cimalla, V. Lebedev, V. Tilak, P.M. Sandvik, D.W. Merfeld, and O. Ambacher
IEEE Sensors Journal 6 (2006) 1115-1119

Work Function Analysis of GaN-based Lateral Polarity Structures by Auger Electron Energy Measurements

M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, and O. Ambacher
J. Appl. Phys. 100 (2006) 074909

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities
J. Pezoldt, F.M. Morales, Ch.Zgheib, Ch.Förster, Th.Stauden, G. Ecke, Ch. Wang, P. Masri
Surf. Interface Anal. 38 (2006) 444 - 447

PECVD silicon carbide deposited at different temperature
J. Huran, B. Zatko, I. Hotovy, J. Pezoldt, A.B. Kobzev, N.I. Balalykin
Czech. J. Phys. 56, Supl. B, (2006) B1207 - B1211

Tuning of Surface Properties of AlGaN/GaN Sensors for Nanodroplets and Picodroplets
C. Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok, V. Yanev, M. Himmerlich, G. Ecke, J. A. Schäfer, and O. Ambacher
IEEE Sensors Journal 6 (2006) 881-886

Pulsed mode operation of strained microelectromechanical resonators in air
V. Cimalla, Ch. Förster, F. Will, K. Tonisch, K. Brueckner, R. Stephan, M. E. Hein, O. Ambacher, and E. Aperathitis
Appl. Phys. Lett. 88 (2006) 253501

Pulsed mode operation of strained microelectromechanical resonators in air
V. Cimalla, Ch. Förster, F. Will, K. Tonisch, K. Brückner, R. Stephan, M. E. Hein, O. Ambacher, and E. Aperathitis
Virtual Journal of Nanoscale Science & Technology ,14 (2006), Issue 1

Phase selective growth and properties of rhombohedral and cubic indium oxide
Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, G. Ecke, Th. Stauden, M. Ali, V. Lebedev, J. Pezoldt, and O. Ambacher
Appl. Phys. Lett. 89 (2006) 011904

Localized donor state above the conduction band minimum in InN revealed by high pressure and temperature transport experiments
L.H. Dmowski, K. Dybko, J. Plesiewicz, T. Suski, H. Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla, and O. Ambacher
phys. stat. sol. (b) 243 (2006) 1537-1540

Absorption and crystallinity of poly(3-hexylthiophene)/ fullerene blends in dependence on annealing temperature
T. Erb, U. Zhokhavets, H. Hoppe, G. Gobsch, M. Al-Ibrahim, O. Ambacher
Thin Solid Films 511-512 (2006) 483-485

Quantitative Auger electron spectroscopy of SiC
R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza, P. Vogrincic
Vacuum 80 (2006) 990-995

Critical points of the bandstructure of AlN/GaN superlattices investigated by spectroscopic ellipsometry and modulation spectroscopy
C. Buchheim, R. Goldhahn, A.T. Winzer, C. Cobet , M. Rakel, N. Esser, U. Rossow, D. Fuhrmann, A. Hangleiter, and O. Ambacher
phys. stat. sol. (c) 3 (2006) 2009-2013

Growth of AlN nanowires by metal organic chemical vapour deposition
V. Cimalla, Ch. Förster, D. Cengher, K. Tonisch, and O. Ambacher
phys. stat. sol. (b) 243 (2006) 1476-1480

Wet chemical etching of AlN in KOH solution
I. Cimalla, Ch. Förster, V. Cimalla, V. Lebedev, D. Cengher, and O. Ambacher
phys. stat. sol. (c) 3 (2006) 1767-1770

The conductivity of Mg-doped InN
V. Cimalla, M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, and W. J. Schaff
phys. stat. sol. (c) 3 (2006) 1721-1724

Piezoelectronic properties of thin AlN layers for MEMS application determined by piezoresponse force microscopy
K. Tonisch, V. Cimalla, Ch. Förster, D. Dontsov, and O. Ambacher
phys. stat. sol. (c) 3 (2006) 2274-2277

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)
Ch. Zgheib, L.E. Mc Neil, P. Masri, Ch. Förster, F.M. Morales, Th. Stauden, O. Ambacher, and J. Pezoldt
Appl. Phys. Lett. 88 (2006) 211909

Transition energies and Stokes shift analysis for In-rich InGaN alloys
P. Schley, R. Goldhahn, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobet, N. Esser, H. Lu, and W.J. Schaff
phys. stat. sol. (b) 7 (2006) 1572-1576

Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
V. Lebedev, F.M. Morales, H. Romanus, G. Ecke, V. Cimalla, M. Himmerlich, S. Krischok, J.A. Schäfer, and O. Ambacher
phys. stat. sol. (c) 3 (2006) 1420-1424

Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications
Ch. Förster, V. Cimalla, V. Lebedev, J. Pezoldt, K. Brückner, R. Stephan, M. Hein, E. Aperithitis, and O. Ambacher
phys. stat. sol. (a) 203 (2006) 1829-1833

The performance of AlGaN solar blind UV photodetectors: responsivity and decay time
G. Cherkashinin, V. Lebedev, R. Wagner, I. Cimalla, and O. Ambacher
phys. stat. sol. (b) 7 (2006) 1713-1717

Nanocrystalline AlN: Si field emission arrays for vacuum electronics
V. Lebedev, F.M. Morales, M. Fischer, M. Himmerlich, S. Krischok, J.A. Schäfer, and O. Ambacher
phys. stat. sol. (a) 203 (2006) 1839-1844

Mobility edge in hydrogenated amorphous carbon
G. Cherkashinin and O. Ambacher
Appl. Phys. Lett. 88 (2006)172114

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher,
Sens. Actuators B (2006) submitted.  

Conduction band properties of ZnO
S. Shokhovets, G. Gobsch, O. Ambacher
Supperlattices Microstruct. (2006) submitted.

Electronic properties of C60/InP(001) heterostructures
G. Cherkashinien, S. Krischok, M. Himmerlich, V. Yanev, O. Ambacher and J.A. Schäfer,
J. Phys. Condens. Matter 18 (2006) 9841.
 
Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells
U. Zhokhavets, T. Erb, G. Gobsch, M. Al-Ibrahim, O. Ambacher
Chem. Phys. Lett., 418 (2006) 347-350

Luminescence properties of highly Si-doped AlN
E. Monroy, J. Zenneck, G. Cherkashinin, O. Ambacher, M. Hermann, M. Stutzmann, M. Eickhoff
Appl. Phys. Lett., 88 (2006) 071906

Pt/GaN Schottky diodes for hydrogen gas sensors
M. Ali, V. Cimalla, V. Lebedev, H. Romanus, V. Tilak, D. Merfeld, P. Sandvik, O. Ambacher
Sens. Actuators B 113 (2006) 797-804

Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy
V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J. A. Schaefer, H. Lu, and W. J. Schaff
phys. stat. sol. (a), 203 (1) (2006), 59

Detailed analysis of the dielectric function for wurtzite InN and In-rich InAlN alloys
R. Goldhahn, P. Schley, A.T. Winzer, G. Gobsch, V. Cimalla, O. Ambacher, M. Rakel, C. Cobut, N. Esser, H. Lu, W.J. Schaff
phys. stat. sol. (a), 203 (2006) 42-49

2005

Surface passivation of GaAs using a Ge interface control layer
D. Jishiashvili, G. Gobsch, G. Ecke, V. Gobronidze, G. Mtskeradze, Z. Shiolashvili
phys. stat. sol. (a) 202(9) (2005) 1778-1785

The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
V. Lebedev, F.M. Morales, H. Romanus, S. Krischok, G. Ecke, V. Cimalla, M. Himmerlich, T. Stauden, D. Cengher, and O. Ambacher,
J. Appl. Phys. 98 (2005) 093508

Defect related absorption and emission in AlGaN solar-blind UV photodetectors

V. Lebedev, I. Cimalla, V. Cimalla, R. Wagner, U. Kaiser, and O. Ambacher
phys. stat. sol (c) 2 (2005) 1360-1365

Relation between absorption and crystallinity of poly(3-hexylthiophene)/fullerene films for plastic solar cells
U. Zhokhavents, T. Erb, G. Gobsch, M. Al-Ibrahim, O. Ambacher
Chem. Phys. Lett. 418 (2005) 343-346

Silicon carbide nanoheteropolytypic structures grown by UHV-CVD on Si(111)
F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
Electrochem. Soc. Proc. 2005-09 (2005) 699 - 706

Stress manipulation in CVD grown SiC on Si mono- and submonolayer Ge precoverages
J. Pezoldt, Ch. Zgheib, F.M. Morales, Ch. Förster, Th. Stauden, Ch. Wang, P. Masri, A. Leycuras, G. Ferro, O. Ambacher
Electrochem. Soc. Proc. 2005-09 (2005) 707 - 714

a-SiC - ß-SiC heteropolytype structures on Si(111)
F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
Appl. Phys. Lett. 87 (2005) 201910-1 - 201910-3.

Micro-electromechanical system based on 3C-SiC/Si heterostructures
Ch. Förster, V. Cimalla, K. Brückner, M. Hein, J. Pezoldt and O. Ambacher
Mater. Sci. Eng. C 25 (2005) 804-808

Tribological characteristics of WC1-x, W2C and WC tungsten carbide films
M. Gubisch, Y. Liu, S. Krischok, G. Ecke, L. Spiess, J. A. Schäfer, C. Knedlik
Tribol. Interface Eng. 48 (2005) 409-417

Nanoscale multilayer WC/C coatings developed for nanopositioning: Part I. Microstructures and mechanical properties
M. Gubisch, Y. Liu, L. Spiess, H. Romanus, S. Krischok, G. Ecke, J. A. Schaefer, Ch. Knedlik
Thin Solid Films 488 (2005) 132-139

Resonant localized donor state above the conduction band minimum in InN
L.H. Dmowski, J.A. Plesiewicz, T. Suski, Hai Lu, W. Schaff, M. Kurouchi, Y. Nanishi, L. Konczewicz, V. Cimalla and O. Ambacher
Appl. Phys. Lett. 86 (2005) 262105.

Surface conductivity of epitaxial InN
V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn, H. Lu and W.J. Schaff
phys. stat. sol. (c) 7 (2005) 2254-2257

Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)
Ch. Zgheib, L.E. McNeil, M. Kazan, P Masri. F.M., Morales O. Ambacher, J. Pezoldt
Appl. Phys. Lett. 87 (2005) 041905

 Polytype control and properties of AlN on silicon
V. Cimalla, V. Lebedev, U. Kaiser, R. Goldhahn, Ch. Förster, J. Pezoldt, O. Ambacher
phys. stat. sol. (c) 2 (2005), 2199-2203.

Effect of Ge in corporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates
Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri, J. Pezoldt
phys. stat. sol. (c) 2 (2005), 1284-1287.

Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions
P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zgheib, M. Voelskow, W. Skorupa, O. Ambacher, J Pezoldt
phys. stat. sol. (a) 202 (2005), 545-549.

Growth of three-dimensional SiC clusters on Si modelled by KMC
A.A. Schmidt, V.S. Kharlamov, K.L. Safonov, Yu.V. Trushin, E.E. Zhurkin, V. Cimalla, O. Ambacher, J. Pezoldt
Comput. Mater. Sci. 33 (2005) 375-381.

Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111)
V. Lebedev, V. Cimalla, U. Kaiser, Ch. Förster, J. Pezoldt, J. Biskupek, and O. AmbacherJ.
Appl. Phys. 97 (114306) (2005)

Processing of novel SiC and group III-nitride based micro-and nanomechanical devicesCh. Förster, V. Cimalla, K. Brueckner, V. Lebedev, R. Stephan, M. Hein, O. Ambacher
phys. stat. sol.(a) 202 (2005) 671-676

Optoelectronic Properties of Conjugated Polymer/ Fullerene Binary Pairs with variety LUMO level differences: Chapter 23
S.Sensfuss, M. Al-Ibrahim,
in "Organic Photovoltaics: Mechanism, Materials and Devices", ed. by S.-S. Sun and N.S. Sariciftci, CRC Press, Boca Raton, FL, USA, (2005) 529-557

Effects of solvent and annealing on the improved performance of polymer solar cells based on poly(3-hexylthiophene)/fullerene
M. Al-Ibrahim, S.Sensfuss, G. Gobsch, O. Ambacher
Appl. Phys. Lett. 86 (201120) (2005) 3 pages.

Effects of solvent and annealing on the improved performance of polymer solar cells based on poly(3-hexylthiophene)/fullerene
M. Al-Ibrahim, S.Sensfuss, G. Gobsch, O. Ambacher
Virtual Journal of Nanoscale Science & Technology 11 (20) (2005) 3 pages.

The influence of the optoelectronic properties of poly(3-alkylthiophenes)on the device parameters inflexible polymer solar cellsM. Al-Ibrahim, H.-K. Roth, M. Schroeder, A. Konkin, U. Zhokhavets, G. Gobsch, S. Sensfuss
Organic Electronics 6 (2) (2005) 65-77

LESR study on PPV-PPE/PCBMcomposites for organic photovoltaics
A.L. Konkin, S. Sensfuss, H.-K. Roth, G. Nazmutdinova, M. Schroedner, M. Al-Ibrahim
Synth. Met. 148 (2005) 199-204

Flexible large area polymersolar cells based on poly(3-hexylthiophene)/ fullerene

M. Al-Ibrahim, H.-Klaus Roth, U. Zhokhavets, G. Gobsch, S. Sensfuss
Sol. Energy Mater. Sol. Cells 85 (1) (2005) 13-20

Comparison of normal and inverse poly (3-hexylthiophene) /fullerene solar cell architecturesM. Al-Ibrahim, S. Sensfuss, J. Uziel, G. Ecke, O. Ambacher
Sol. Energy Mater. Sol. Cells 85/2 (2005) 277.

Computer simulation of the early stages of nano scale SiC growth on Si
K.L. Safonov, Yu.V. Trushin, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 169-172.

Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam EpitaxyP. Weih, H. Romanus, Th. Stauden, L. Spieß, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 173-176.

Low temperature chemical vapor deposition of 3C-SiC on Si substratesCh. Förster, V. Cimalla, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 201–204.

Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification J.Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P.Vennegues, A. Leycuras, D. Panknin, J. Stoemenos, W.Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 213–216.

Infrared Gratings Based on SiC/Si-Heterostructures
C. Rockstuhl, H.P. Herzig, Ch. Förster, A. Leycuras, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 433- 436.

2004

Zinc Oxide as an ozone sensor
R. Martins, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, M. Bender, N. Katsarakis, V. Cimalla, and G. Kiriakidis
J. Appl. Phys. 96 (2004) 1398-1408

Gap state absorption in AlGaN photoconductors and solar-blind photodetectors
V. Lebedev, I. Cimalla, U. Kaiser, and O. Ambacher
Phys. Status Solidi C 2 (2004) c233-c237

Anisotropy of the dielectric function for wurtzite InN
R. Goldhahn, A.T. Winzer, V. Cimalla, O. Ambacher, C. Cobet, W. Richter, N. Esser, J. Furthmuller, F. Bechstedt, and H. Lu
Superlattice and Microstructures 36 (2004) 591-597

Insertion of C-60 into multi-wall carbon nanotubes - a synthesis of C-60@MWCNT
T. Frohlich, P. Scharff, W. Schliefke, H. Romanus, V. Gupta, C. Siegmund, O. Ambacher, and L. Spiess
Carbon 42 (2004) 2759-2762

Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

E. Aperathitis, M. Modreanu, M. Bender, V. Cimalla, G. Ecke, M. Androulidaki, and N. Pelekanos  
Thin Solid Films 450 (2004) 101–104

Advanced thermal processing of semiconductor materials by flash lamp annealing
W. Skorupa, D. Panknin, M. Voelskow, W. Anwand, G. Ferro, Y. Moteil, A. Leycuras, J. Pezoldt, R. McMahon, M. Smith, J. Camassel, J. Stoemenos, E. Polychroniadis, P. Godignon, N. Mestres, D. Turover, S. Rushworth, A. Friedberger, T. Gebel, R.A. Yankov, S. Paul, W. Lerch
Mater. Res. Soc. Symp. Proc. 810 (2004) C4.16.1-C4.16.6

Efficient large area polymer solar cells on flexible substrates
M. Al-Ibrahim, H.-Klaus Roth, S. Sensfuss
Applied Physics Letters Vol. 85 (9) (2004) 1481-1483

Arylene-Vinylene/Arylene-EthynyleneCopolymers: Synthesis, Characterization and Photovoltaic Applications
D. A. M. Egbe, E. Klemm, B. Carbonnier, T. Pakula, S. Sensfuss, M. Al-Ibrahim, A. Konkin, H. Hoppe, N. S. Sariciftci
Macromol. Rapid Commun. 25, February 3, 2004 (F49).

Determination of polaronlifetime and mobility in a polymer/fullerene solar cell by means of photoinduced absorption
C. Arndt, U. Zhokhavets, M. Mohr, G. Gobsch, M. Al-Ibrahim, S. Sensfuss
Synthetic Metals 147 (2004) 257–260

Auger Electron Spectroscopy of Silicon Carbide
R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza
J. Electrical Engineering 55 (2004) 269-272

Untersuchung der Anfangsstadien des Wachstums von SiC Nanoclustern auf Siliziumsubstraten
Yu.V. Trushin, E.E. Zhurkin, K.L. Safonov, A.A. Schmidt, V.S. Kharlamov, S.A. Korolyov, M.N. Lubov , J. Pezoldt
Pizma v Zh. Techn. Fiz. 30 (2004) (15) 48-54 (russ.).
Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
Tech. Phys. Lett. 30 (2004) 641-643 (engl.).

SIMS investigations of the influence of Ge pre-deposition on the interface quality between SiC and Si
J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F.M Morales , R. Kosiba, G. Ecke, P. Weih, O. Ambacher
Surf. Interface Anal. 36 (2004) 969-972.

Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures
C. Buchheim, A. T. Winzer, R. Goldhahn, G. Gobsch, O. Ambacher, A. Link, M. Eickhoff, M. Stutzmann
Thin Solid Films 450 (2004) 155-158

Structural and optical properties of both pure poly (3-octylthiophene) (P3OT) and P3OT/ fullerene films
T. Erb, S. Raleva, U. Zhokhavets, G. Gobsch, B. Stühn, M. Spode, O. Ambacher
Thin Solid Films 450 (2004) 97.

Temperature dependent electric fields in GaN Schottky diodes studied by electroreflectance
S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, M. Eickhoff
Thin Solid Films 450 (2004) 163.

Two dimensional electron gas recombination in undoped AlGaN/GaN heterostructures
G. Martinez-Criado, C. Miskys, U. Karrer, O. Ambacher, M. Stutzmann
Jap. J. Appl. Phys. 43 (2004) 3360.

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes
M. Hermann, E. Monroy, A. Helman, B. Baur, M. Albrecht, B. Daudin, O. Ambacher, M. Stutzmann, and M. Eickhoff
phys. stat. solidi (c) 1 (2004) 2210.

High-resolution diffuse x-ray scattering from threading dislocation in heteroepitaxial layers
S. Danis, V. Holy, Z. Zhong, G. Bauer, O. Ambacher
Appl. Phys. Lett. 85 (2004) 3065.

Comment on "Mie resonances, Infrared Emission, and the Band Gap of InN"
F. Bechstedt, J. Furthmüller, O. Ambacher, and R. Goldhahn
Phys. Rev. Lett. 93 (2004) 269701.

Momentum matrix element and conduction band nonparabolicity in wurtzite GaN
S. Shokhovets, G. Gobsch, and O. Ambacher
Appl. Phys. Lett. 86 (2004) 161908.

Linear alignement of SiC dots on silicon substrates
V. Cimalla, A.A. Schmidt, Th. Stauden, K. Zekentes, O. Ambacher, J. Pezoldt
J. Vac. Sci. Technol. B22 (2004) L20-L24.

Self organized SiC nanostructures on silicon
V. Cimalla, A.A. Schmidt, Ch. Förster, O. Ambacher, K. Zekentes, J. Pezoldt
Superlattices and Microstructures 36 (2004) 345-351.

Cubic InN on r-plane sapphire
V. Cimalla, U. Kaiser, I. Cimalla, G. Ecke, J. Pezoldt, L. Spiess, O. Ambacher
Superlattices and Microstructures 36 (2004) 487-495.

Diffusion from platinum silicide for the local lifetime control in Silicon
J. Vobecky, P. Hazdra, G. Ecke, D. Kolesnikov
International Seminar on Power Semiconductors, Prague, 31. August-3. September 2004, Conf. Proc. 187-190

Growth of AlxGa1-xN-layers on planar and patterned substrates
U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter
J. Cryst. Growth 272 (2004) 506.

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, and O. Ambacher
Nucl. Instr. and Meth. B 215 (2004) 486-494

Investigations of MBE grown InN and the influence of sputtering on the surface composition
R.Krischok, V. Yanev, O. Balykov, M. Himmerlich, J.A. Schäfer, R. Kosiba,G. Ecke, I. Cimalla, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, and L.F. Eastman
Surface Science 566-568 (2004) 849-855

Recent advances in GaN HEMT development
F. Schwierz and O. Ambacher
(2004) submitted.

Study of pinholes and nanotubes in AlInGaN films by cathodoluminescence and atomic force microscopy
H. Herrera, A. Cremades, J. Piqueras, M. Stutzmann, O.Ambacher
J. Appl. Phys. 95 (2004) 5305.

The role of Ge predeposition temperature in the epitaxy of SiC on Silicon
F.M.Morales, Ch. Zgheib, S.I. Molina, D. Araujo, R. Garcia, C. Fernandez, A. Sanz-Hervas, P. Masri, P. Weih, Th. Stauden, V. Cimalla, O. Ambacher and J. Pezoldt
phys. stat. sol., c1 (2004) 314-346

Lateral alignment of SiC dots on silicon substrates
V. Cimalla, J. Pezoldt, Th. Stauden, Ch. Förster, and O. Ambacher
phys. stat. sol., c1 (2004) 337-340

3C-SiC:Ge alloy grown on Si(111) substrates by SSMBE
P.Weih, V. Cimalla, Th. Stauden, R. Kosiba, G. Ecke, L. Spiess, H.Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt
phys. stat. sol., c1 (2004) 347-350

Kinetic Monte Carlo simulations of SiC nucleation on Si(111)
A.A. Schmidt, K.L. Safonov, Yu.V. Trushin, V. Cimalla, O. Ambacher, J. Pezoldt
phys. stat. sol., a201 (2004) 333-337

Flash lamp supported deposition of 3C-SiC (FLASiC) – a promising technique to produce high quality cubic SiC layers
W.Skorupa, D. Panknin, W. Anwand, M. Voelskow, G. Ferro, Y. Monteil, A.Leycuras, J. Pezoldt, R. McMahon, M. Smith, J. Camassel, J. Stoemenos,E. Polychroniadis, P. Godignon, N. Mestres, D. Turover, S. Rushworth, A. Friedberger
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 175-180

Structure and composition of 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE
P.Weih, V. Cimalla, Th. Stauden, R. Kosiba, L. Spieß, H. Romanus, M.Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related aterials 2003 (ICSCRM 2003), 457-460 (2004) 293-296

Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
F.M.Morales,Ch. Zgheib, S.I. Molina, D. Araújo, R. García, C. Fernández, A.Sanz-Hervás, P. Masri , P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 297-300

Stress control in 3C-SiC films grown on Si(111)
Ch. Zgheib, P. Masri, P. Weih, O. Ambacher, J. Pezoldt
Mater. Sci. Forum Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 301-304

Etching of SiC with fluorine ECR plasma
Ch. Förster, V. Cimalla, R. Kosiba, G. Ecke, P. Weih, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 821-824

Formation of 3C-SiC films embedded in SiO2 by sacrificial oxidation
D. Panknin, P. Godignon, N. Mestres, E. Polychroniadis, J. Stoemenos, G. Ferro, J. Pezoldt, W. Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 1515-1518

Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
Ch. Zgheib, Ch. Förster, P. Weih, V. Cimalla, M. Kazan, P. Masri, O.Ambacher, J. Pezoldt
Thin Solid Films, 455-456 (2004) 183-186

In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
Ch. Förster, F. Schnabel, P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Thin Solid Films, 455-456 (2004) 695-699

2003

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry
S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter
J. Appl. Phys. 94(1) (2003) 307-312

Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity
S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, M. Hermann, U. Karrer, and M. Eickhoff
Appl. Phys. Lett. 82(11) (2003) 1712-1714

Study of inversion domain pyramids formed during the GaN : Mg growth
G. Martinez-Criado, A. Cros, A. Cantarero, N.V. Joshi, O. Ambacher, and M. Stutzmann
Solid-State Electron. 47(3) (2003) 565-568

Ozone sensing properties of DC-sputtered, c-axis oriented ZnO films at room temperature

N. Katsarakis, M. Bender, V. Cimalla, E. Gagaoudakis, and G. Kiriakidis
Sens. Actuat. B 96 (2003) 76-81.

Mid gap photoluminescence from GaN : Mn, a magnetic semiconductor
N.V. Joshi, H. Medina, A. Cantarero, and O. Ambacher
J. Phys. Cem. Sol. 64 (2003) 1685-1689

Charge transfer at the Mn acceptor level in GaN
T. Graf, M. Gjukic, L. Gorgens, O. Ambacher, M.S. Brandt, and M. Stutzmann
J. Supercond. 16 (2003) 83-86

Plasma-assisted MBE growth of quaternary InAlGaN quantum well heterostructures with room temperature luminescence
E. Dimakis, A. Georgakilas, M. Androulidaki, K. Tsagaraki, G. Kittler, F. Kalaitzakis, D. Cengher, E. Bellet-Amalric, D. Jalbert, and N.T. Pelekanos
Journal of Crystal Growth 251(1-4) (2003) 476-480

Optical study of gallium and nitrogen polarity layers of GaN grown on sapphire
A. Cros, N.V. Joshi, T. Smith, A. Cantarero, G. Martinez-Craido, O. Ambacher, and M. Stutzmann
Physica Status Solidi C 7 (2003) 2699-2702

Fabrication of GaAs laser diodes on Si using low-temperature bonding of MBE-grown GaAs wafers with Si wafers
D. Cengher, Z. Hatzopoulos, S. Gallis, G. Deligeorgis, E. Aperathitis, M. Androulidaki, M. Alexe, V. Dragoi, E.D. Kyriakis-Bitzaros, and G. Halkias
Journal of Crystal Growth 251(1-4) (2003) 754-759

Highly sensitive ZnO ozone detectors at room temperature

M. Bender, E. Fortunato, P. Nunes, I. Ferreira, A. Marques, R. Martins, N. Katsarakis, V. Cimalla, and G. Kiriakidis
Jap. J. Appl. Phys. 42 (2003) L435-L437

Properties of rf-sputtered indium-tin-oxynitride thin films

E. Aperathitis, M. Bender, V. Cimalla, G. Ecke, and M. Modreanu
J. Appl. Phys. 94 (2003) 1258-1266

GaN polarity domains spatially resolved by x-ray standing wave microscopy
M. Drakopoulos, J. Zegenhagen, T.-L. Lee, A. Snigirev, I. Snigireva, V. Cimalla, and O. Ambacher
J. Phys. D: Appl. Phys. 36 (2003) A214-A216

Optical and ESR studies on poly(3-alkylthiophene)/fullerene composites for solar cells
S. Sensfuss, A. Konkin, H.-K. Roth, M. Al-Ibrahim, U, Zhokhavets, G. Gobsch, V.I. Krinichnyi, G.A. Nazmutdinova, E. Klemm
Synth. Met. 137/1-3 (2003) 1433–1434

Anisotropic optical properties of conjugated polymer and polymer/fullerene films
U. Zhokhavets, R. Goldhahn, G. Gobsch, M. Al-Ibrahim, H.-K. Roth, S. Sensfuß, E. Klemm, D. A. M. Egbe
Thin Solid Films Vol. 444 (2003) 215-220

Characterisation of potential donor acceptor pairs for polymer solar cells by ESR, optical and electrochemical investigations
S. Sensfuss, M. Al-Ibrahim, A. Konkin, G. Nazmutdinova, U. Zhokhavets; G. Gobsch; D. A. M. Egbe, E. Klemm, H.-K. Roth Proceedings of International Symposium on Optical Science and Technology, SPIE’s48th annual meeting, Organic Photovoltaics IV, ed. By Z.H. Kafafi andP.A. Lane, Vol. 5215, Pages 129-140 San Diego (3-8 August 2003)

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, and O. Ambacher
Nucl. Instr. and Meth. B (2003) accepted for publication

Energy gap and optical properties of InxGa1-xN
F. Bechstedt,J. Furthmüller, M. Ferhat, L. K. Teles, L. M. R. Scolfaro, J. R. Leite,V. Yu Davydov, O. Ambacher, and R. Goldhahn,
phys. stat. sol. (a) 195 (2003) 628 – 633

Growth of a-plane InN on r-plane sapphire with a GaN buffer by molecular-beam epitaxy
H. Lu, W. J. Schaff, L. F. Eastman, J. Wu, W. Walukiewicz, V. Cimalla, and O. Ambacher,
Appl. Phys. Lett. 83 (2003) 1136.

Analysis of field effect devices based on poly (3-octylthiophene)
S. Scheinert, and W. Schliefke,
Synth. Met. 139 (2003) 501.

Photoreflectance studies of N- and Ga-face AlGaN/GaN heterostructures confining a polarisation induced 2DEG
A.T. Winzer, R. Goldhahn, C. Buchheim, O. Ambacher, A. Link, M. Stutzmann, Y. Smorchkova, U.K. Mishra, and J.S. Speck,
phys. stat. sol. (b) 240 (2003) 380.

Auger investigations of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher
Appl. Surf. Sci. 220 (2003) 304.

Electronics and Sensors Based on Pyroelectric AlGaN/GaN Heterostructures, PART A: Polarisation and Pyroelectronics
O. Ambacher, M. Eickhoff, A. Link, M. Hermann, M. Stutzmann, F. Bernardini, V. Fiorentini, Y. Smorchkova, J. Speck, U. Mishra, W. Scharff, V. Tilak, and L. F. Eastman,
phys. stat. sol. c0 (2003) 1878.
PART B: Sensor Applications
M. Eickhoff, J. Schalwig, O. Weidmann, L. Görgens, R. Neuberger, M. Hermann, G. Steinhoff, B. Baur, G. Müller, O. Ambacher, and M. Stutzmann,
phys. stat. sol. c0 (2003) 1908.

Freestanding GaN-Substrates and Devices
C. R. Miskys, M. K. Kelly, O. Ambacher, and M. Stutzmann,
phys. stat. sol. c0 (2003) 1627.

Tight-Binding Simulation of an InGaN/GaN Quantum Well with indium Concentration Fluctuation
J. Gleize, A. di Carlo, P. Lugli, J. M. Jancu, R. Scholz, O. Ambacher, D. Gerthsen, and E. Hahn,
phys. stat. sol. c1 (2003) 302.

Theoretical Evalution of the Interface Modification for Aluminium Nitride Growth on Si
P. Masri, V. Cimalla, J. Pezoldt, J. Camassel, B. Gil, and M. Averous,
phys. stat. sol. c1 (2003) 355.

Two dimensional electron gas effects on the photoluminescence form a noninterntionally doped AlGaN/GaN heterojunction
G. Martinez-Criado, A. Cros, A. Cantarero, U. Karrer, O. Ambacher, C. R. Miskys, and M. Stutzmann
phys. stat. sol. c1 (2003) 392.

Preparation of Epitaxial Templates for Molecular Beam Epitaxy of III-Nitrides on Silicon Substrates
V. Lebedev, J. Pezoldt, V. Cimalla, J. Jinschek, F. M. Morales, and O. Ambacher
phys. Stat. Sol. c1 (2003) 183.

Dielectric function and one-dimensional description of the absorption of poly(octylthiophene)
T. Zhokhavets, R. Goldhahn, G. Gobsch, W. Schliefke
Sythetic Metals 138 (2003) 491.

Photoelectron emission micorscopy observation of inversion domain boundaries of GaN-based lateral polarity heterostructures
W.-C. Yang, B.J. Rodriguez, M. Park, R.J. Nemanich, O. Ambacher, and V. Cimalla
J. Appl. Phys. 94 (2003) 5720.

Micro-Raman Study of Electronic Properties of Inversion Domains in GaN-based lateral Polarity Heterostructures
M. Park, J. J. Cuomo, B. Rodriguez, W. Yang, R. J. Nemanich, and O. Ambacher
J. Appl. Phys. 92 (2003) 9542.

Auger depth profiling and factor analysis of SiC layers altered by sputtering
R. Kosiba, G. Ecke, J. Liday, J. Breza, and O. Ambacher
J. Electrical Engineering 54 (2003) 25-29

Spin resonance of Mn2+ in wurtzite GaN and AlN films
T. Graf, M. Gjukic, M. Hermann, M.S. Brandt, M. Stutzmann, O. Ambacher
Phys. Rev. B 67 (2003) 165215.

Growth and Characterization of Mn:GaN Epitaxial Films
T. Graf, M. Gjukic, L. Görgens, B. Phillip, O. Ambacher, M. S. Brandt, M. Stutzmann
J. Appl. Phys. 93 (2003) 9697.

Magnetotransport properties of a polarzation-doped three-dimensional electron slab
D. Jena, S. Heikman, J. S. Speck, A. Gossard, U. K. Mishra, A. Link, and O. Ambacher
Phys. Rev. Lett. B 67 (2003) 153306.

Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
F. M. Morales, S. I. Molina, D. Arauj, V. Cimalla, J. Pezoldt, L. Barbadillo, M. J. Hernandez, J. Piqueras
phys. stat. sol., A195 (2003) 116-121

SiC voids, mosaic microstructure and dislocation distribution in Si carbonized layers
F. M. Morales, S. I. Molina, D. Raujo, R. Garca, V. Cimalla, J. Pezoldt
Diamond and Related Materials, 12 (2003) 1227-1230

The transistion from 2D to 3D nanoclusters of silicon carbide on silicon
Yu V. Trushin, K L. Safonov, O. Ambacher, J. Pezoldt
Techn. Phys. Lett., 29 (2003) (8) 663-665
Pizma v Zh. Techn. Fiz., 29 (2003) (16) 11-15

Growth of cubic InN on r-plane sapphire
V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieß, G. Teichert, H. L., W. J. Schaff
Appl. Phys. Lett. 83 (2003) 3468-3470

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, S. Krischok, J.A. Schaefer, O. Ambacher, W.J. Schaff,
Nucl. Instr. and Meth. B (2003) accepted for publication.

Sputtering of SiC with low energy He and Ar ions under grazing incidence
R. Kosiba, G. Ecke, O. Ambacher, M. Menyhard,
Radiat. Eff. and Def. in Solids 158 (2003) 721.

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher,
Appl. Surf. Sci. 220 (2003) 304.

Energy gap and optical properties of InxGa1-xN
F. Bechstedt, J. Furthmüller, M. Ferhat, L. K. Teles, L. M. R. Scolfaro, J. R. Leite, V. Yu Davydov, O. Ambacher, and R. Goldhahn,
phys. stat. sol. (2003) in press.

AlN/diamond heterojunction diode
C. R. Miskys, J. A. Garrido, C. Nebel, M. Hermann, O. Ambacher, M. Eickhoff, and M. Stutzmann,
Appl. Phys. Lett. 82 (2003) 290.

High resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates
P. Weih, V. Cimalla, Ch. Förster, J. Pezoldt, Th. Stauden, L. Spieß, H. Romanus, M. Hermann, M. Eikhoff, P. Masri, O. Ambacher
Materials Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 233-236

Correlation between strain, optical and electrical properties of InN grown by MBE
V.Cimalla, Ch.Förster, G.Kittler, I.Cimalla, R.Kosiba, G.Ecke, O.Ambacher, R.Goldhahn, S.Shokhovets, A.Georgakilas, H.Lu, W.Schaff,
physica status solidi c0 (2003) 2818-2821

ESR of Mn2+wurtzite GaN and AlN films
T. Graf, M. Gjukic, O. Ambacher, M. S. Brandt, and M. Stutzmann
Phys. Rev. B (2003) in press.

2002

Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG
R. Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M.Stutzmann, Y. Smorchkova, U. K. Mishra, J. S. Speck
phys. stat. sol. (b) 234, 713 (2002)

Gas sensitive GaN/AlGaN-heterostructures
J. Schalwig, J. Müller, M. Eickhoff, O. Ambacher, and M. Stutzmann,
Sensor Actuat. 87 (2002) 425.

Progress in nitride–based microwave HEMTs
L. F. Eastman, V. Tilak, J. Smart, O. Ambacher et al.
Inst. Phys. Conf. Ser. 170 (2002).

Group III-Nitride based gas sensors for combustion monitoring
J. Schalwig, G. Müller, O. Ambacher, and M. Stutzmann,
Mat. Sci Eng. B-Solid 93 (2002) 207.

Nanotechnology for SAW devices on AlN epilayers
T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, and C. Prieto,
Mat. Sci. Eng. B-Solid 93 (2002) 154.

The Mn3+/2+ acceptor level in group III-nitrides
T. Graf, M. Gjukic, M. S. Brandt, M. Stutzmann, and O. Ambacher
Appl. Phys. Lett. 81 (2002) 5159.

Hypersonic characterization of sound propagation velocity in AlxGa1-xN thin films
R. J. J. Riobóo, E. Rodriguez-Canas, M. Vila, C. Prieto, F. Calle, T. Palacios, M.A. Sánchez, F.Omnès, O. Ambacher, B. Assouar, and O. Elmazria,
J. Appl. Phys. 92 (2002) 6868.

GaN-based Heterostructures for Sensor Applications
M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, and G. Müller,
Diamond and Related Materials 11 (2002) 886.

Study of Exciton Dead Layers in GaN Schottky Diodes with N- and Ga-face Polarity
S. Shokhovets, D. Fuhrmann, R. Goldhahn, G. Gobsch, O. Ambacher, and U. Karrer,
phys. stat. sol. (a) 194 (2002) 480.

Photoreflectance Studies of AlGaN/GaN Heterostructures Containing a Polarisation Induced 2DEG
R. Goldhahn, C. Buchheim, S. Shokhovets, G. Gobsch, O. Ambacher, A. Link, M. Hermann, M.Stutzmann, Y. Smorchkova, U.K. Mishra, and J. S. Speck,
phys. stat. sol. (b) 234 (2002) 713.

Observation of ion-induced changes in the channel current of high electron mobility AlGaN/GaN transistors (HEMT)
R. Neuberger, G. Müller, M. Eickhoff, and O. Ambacher,
Mat. Sci Eng. 93 (2002) 143.

The estimation of sputtering yields for SiC and Si
G. Ecke, R. Kosiba, V. Kharlamov, Y. Trushin and J. Pezoldt
Nucl. Instrum. Methods Phys. Res. B. 196 (2002) 39.

Pyroelectric Properties of Al(In)GaN/GaN Hetero- and Quantum Well-Structures
O. Ambacher, J. Majewski, C. Miskys, A. Link, M. Hermann, M. Eickhoff, M. Stutzmann, F. Bernardini, V. Fiorentini, V. Tilak, B. Schaff, and L.F. Eastman,
J. Phys.: Condensed Matter 14 (2002) 3399.

Transport properties of 2DEGs in AlGaN/GaN Heterostructures: spin splitting and occupation of higher subbands
A. Link, T. Graf, O. Ambacher, A. Jimenez, E. Calleja, Y. Smorchkova, J. Speck, U. Mishra, and M. Stutzmann,
phys. stat. sol. (b) 234 (2001) 805.

Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures
V. Fiorentini, F. Bernardini, and O. Ambacher,
Appl. Phys. Lett. 80 (2002) 1204.

Hydrogen response mechanism of Pt-GaN Schottky diodes
J. Schalwig, G. Müller, U. Karrer, M. Eickhoff, O. Ambacher, M. Stutzmann, L. Görgens, and G. Dollinger,
Appl. Phys. Lett. 80 (2002) 1222.

Role of defect centers in recombination processes in GaN monocrystals
N. V. Joshi, A. Cros, A. Cantarero, H. Medina, O. Ambacher, and M. Stutzmann,
Appl. Phys. Lett. 80 (2002) 2824.

Influence of GaN domain size on the electron mobility of two-diemsional electron gases in AlGaN/GaN heterostructures determined by x-ray reflectivity and diffraction
Z. Zhong, O. Ambacher, A. Link, V. Holy, J. Stangl, R. T. Lechner, T. Roch, and G. Bauer,
Appl. Phys. Lett. 80 (2002) 3521.

Piezoresponse Force Microscopy for Polarity Imaging of GaN
B. J. Rodriguez, A. Gruverman, A. I. Kingon, R. J. Nemanich, and O. Ambacher,
Appl. Phys. Lett. 80 (2002) 4166.

Thermoresistivity and piezoresistive properties of wurtzite GaN
S. Mingiacchi, P. Lugli, A. Bonfiglio, G. Conte, M. Eickhoff, O. Ambacher, A. Rizzi, A. Passaseo, P. Visconti, and R. Cingolani,
phys. stat. sol. (a) 190 (2002) 281.

Critical island size of the SiC formation on Si (100) and Si (111)
F. Scharmann, W. Attenberger, J. K. N. Lindner and J. Pezoldt,
Mater. Sci. Eng., B 89 (2002) 201-204.

MC simulations of depth profiling by low energy ions
R. Kosiba, and G. Ecke,
Nucl. Instrum. Methods Phys. Res. B. 187 (2002) 36.

2001

Playing with Polarity
M. Stutzmann, O. Ambacher, M. Eickhoff, U. Karrer, A. Lima Pimenta, R. Neuberger, J. Schalwig, R. Dimitrov, P. J. Schuck, and R. D. Grober,
phys. stat. sol. (b) 228 (2001) 505.

Wetting behaviour of GaN-surfaces with Ga- or N-face polarity
M. Eickhoff, R. Neuberger, G. Steinhoff, O. Ambacher, G. Müller, and M. Stutzmann,
phys. stat. sol. (b) 228 (2001) 519.

Transport properties of two dimensional electron gases induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures
A. Link, T. Graf, R. Dimitrov, O. Ambacher, M. Stutzmann, Y. Smorchkova, U. Mishra, and J. Speck,
phys. stat. sol. (b) 228 (2001) 603.

Excitonic transitions in homoepitaxial GaN
G. Martinez-Criado, C. R. Miskys, A. Cros, A. Cantarero, O. Ambacher, and M. Stutzmann,
phys. stat. sol. (b) 228 (2001) 497.

Group-III-nitride based sensors for exhaust gas monitoring
J. Schalwig, G. Müller, O. Ambacher, and M. Stutzmann,
phys. stat. sol. (a) 185 (2001) 39.

High electron mobility AlGaN/GaN transistors for fluid monitoring applications
R. Neuberger, G. Müller, O. Ambacher, and M. Stutzmann,
phys. stat. sol. (a) 185 (2001) 85.

Formation and electronic transport of 2D electron and hole gases in AlGaN/GaN heterostructures
A. Link, O. Ambacher, I. P. Smorchkova, U. K. Mishra, J. S. Speck, and M. Stutzmann,
Mater. Sci. Forum 353 (2001) 787.

Optically detected magnetic resonance of the red and near infrared luminescence in Mg-doped GaN
M. W. Bayerl, M. S. Brandt, O. Ambacher, M. Stutzmann, E. R. Glaser, R. L. Henry, A. E. Wickenden, D. D. Koleske, T. Suski, I. Grzegory, and S. Porowski,
Phys. Rev. B 63 (2001) 125203.

Generation-recombination noise of DX-centers in AlN:Si
S. T. B. Goennenwein, S. Baldovino, R. Zeisel, O. Ambacher, M. S. Brandt, and M. Stutzmann,
Appl.Phys. Lett. 79 (2001) 2396.

Excitonic transitions in homoepitaxial GaN
G. Martinez-Criado, C. R. Miskys, A. Cros, A. Cantarero, O. Ambacher, and M. Stutzmann,
phys. stat. sol. (b) 228 (2001) 497.

Inhomogeneous incorporation of In and Al in molecular beam epitaxial AlInGaN films
A. Cremades, V. Navarro, J. Piqueras, A. P. Lima, O. Ambacher, and M. Stutzmann,
J. Appl. Phys. 90 (2001) 4868.

Spatially resolved photoluminescence of inversion domain boundaries in GaN based lateral polarity heterostructures
J. Schuck, R. D. Grober, O. Ambacher, A. P. Lima, C. Miskys, R. Dimitrov, and M. Stutzmann,
Appl. Phys. Lett. 79 (2001) 952.

Photoluminescence study of excitons in homoepitaxial GaN
G. Martinez-Criado, C. R. Miskys, A. Cros, O. Ambacher, A. Cantarero, and M. Stutzmann,
J. Appl. Phys. 90 (2001) 5627.

g-values of effective mass donors in AlGaN alloys
M. W. Bayerl, M. S. Brandt, T. Graf, O. Ambacher, J. A. Majewski, M. Stutzmann, D. J. As, and K. Liska,
Phys. Rev. B 63 (2001) 165204.

Residual strain effect on the two-dimensional electron gas concentration of AlGaN/GaN heterostructures
G. Martinez-Criado, A. Cros, A. Cantarero, O. Ambacher, C. R. Miskys, R. Dimitrov, M. Stutzmann, J. Smart, and J. R. Shealy,
J. Appl. Phys. 90 (2001) 4735.

Electron affinity of AlGaN (0001)
S. P. Grabowski, M. Schneider, H. Nienhaus, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann,
Appl. Phys. Lett. 78 (2001) 2503.

Piezoresistivity of AlxGa1-xN-layers and AlxGa1-xN /GaN heterostructures
M. Eickhoff, O. Ambacher, G. Krötz, and M. Stutzmann
J. Appl. Phys. 90 (2001) 3383-3386

Ion-induced modulation of channel currents in AlGaN/GaN high electron mobility transistors
R. Neuberger, G. Müller, O. Ambacher, and M. Stutzmann,
phys. stat. sol. rapid communication (2001) 01-006.

Theoretical and experimental investigations of the defect evolution in silicon carbide during N and Al ion implantation taking into account internal stress fields
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, F. Scharmann, and J. Pezoldt,
Nucl. Instrum. Methods Phys. Res., B 178 (2001) 269.

The influence of surface preparation on the properties of SiC on Si(111)
J. Pezoldt, B. Schröter, V. Cimalla, and P. Masri,
phys. status solidi (a) 185 (2001) 159.

Carbon-induced reconstruction on Si(111) investigated by RHEED and molecular dynamics
C. Koitzsch, D. Conrad, K. Scheerschmidt, F. Scharmann, P. Maslarski, and J. Pezoldt,
Appl. Surf. Sci., 179 (2001) 49.

Elasticity based approach of interfaces: application to heteroepitaxy and hetero-systems
M. Averous, P. Masri, Th. Stauden, and J. Pezoldt,
phys. status solidi (a) 187 (2001) 439.

Electrical characterization of SiC/Si heterostructures with Ge modified interfaces
J. Pezoldt, Ch. Förster, P. Weih and P. Masri,
Appl. Surf. Sci., 184 (2001) 80-84.

(AlN)1-x(SiC)x buried layers implanted in 6H-SiC: A theoretical study of their optimized compostion
P. Masri, M. Rouhani Laridjani, J. Pezoldt, W. Skorupa, R. A. Yankov and M. Averous,
Appl. Surf. Sci. 184 (2001) 384-387

Growth of SiC Nanoclusters on Si surface using molecular beam epitaxy, In: Modern condensed matter physics: experimental methods and devices, related topics
D. V. Kulikov, K. L. Safonov, Yu. V. Trushin, and J. Pezoldt,
Proc. of the 4th Moscow Intern. ITEP School of Physics, ED. A. L. Suvorov, Yu. G. Abov, V. G. Firsov, Akademprint, 2001, 299-303

Quantitative Auger depth profiling of Ni/C multilayers by factor analysis and comparison with T-dyn simulations
J. Liday, M. Catarova, E. Matuskova, R. Kosiba, G. Ecke, P. Vogrincic, and J. Breza,
J. Electr. Eng. 52, 5 (2001) 162.

Undoped AlGaN/GaN HEMT´s for Microwave Power Amplification
L. F. Eastman, V. Tilak, J. Smart, B. Green, E. M. Chumbes, R. Dimitrov, H. T. Kim, O. Ambacher, N. Weimann, T. Prunty, M. Murphy, W. Schaff, and J. R. Shealy,
IEEE Transaction on Electron Devices 48 (2001) 479.

2000

Two dimensional electron gases in undoped and doped AlGaN/GaN heterostructures
O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M.Murphy, A.J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A.Mitchell,and M. Stutzmann,
J. Appl. Phys. 87 (2000) 334.

Characterization of InGaN thin films using high-resolution x-ray diffraction
L. Görgens, O. Ambacher, M. Stutzmann, C. Miskys, F. Scholz, and J. Off,
Appl. Phys. Lett. 76 (2000) 577.

Structural properties of AlxGa1-xN grown on sapphire by molecular beam epitaxy
J. W. Kim, C.-S. Son, I.-H. Choi, Y. K. Park, Y. T. Kim, O. Ambacher, and M. Stutzmann,
J. Cryst. Growth 208 (2000) 37.

Structural and optical properties of Si-doped GaN
A. Cremades, L. Görgens, O. Ambacher, and M. Stutzmann,
Phys. Rev. B 61 (2000) 2812.

High electron mobility AlGaN/GaN heterostructure on (111)Si
A. T. Schremer, J. A. Smart, Y. Wang, O. Ambacher, N. C. MacDonald, and J. R. Shealy,
Appl. Phys. Lett. (2000) 736.

GaN/SiC heterojunction bipolar transistors
W. J. Schaff, H. Wu, C. J. Praharaj, M. Murphy, T. Eustis, B. Foutz, O. Ambacher, and L. F. Eastman,
Sol.-Stat. Electron. 44 (2000) 259.

Two-dimensionalelectrongases in Ga-face and N-face AlGaN/GaN heterostructures grownbyplasma-induced molecular beam epitaxy and metalorganic chemicalvapordeposition on sapphire
R. Dimitrov, M. Murphy, J. Smart, W. Schaff, J. R. Shealy, L. F. Eastman, O. Ambacher, and M. Stutzmann,
J. Appl. Phys. 87 (2000) 3375.

Structural properties of AlGaN/GaN heterostructures on Si(111) substrates suitable for high electron mobility transistors
S. Kaiser, M. Jakob, J. Zweck, W. Gebhardt, O. Ambacher, R. Dimitrov, A. T. Schremer, J. A. Smart, and J. R. Shealy,
J. Vac. Sci. Technol. B 18 (2000) 733.

AlGaN-based ultraviolet light detectors with integrated optical filters
U. Karrer, A. Dobner, O. Ambacher, and M. Stutzmann,
J. Vac. Sci. Technol. B 12 (2000) 757.

DX-behavior of Si in AlN
R. Zeisel, M. W. Bayerl, S. T. B. Goennenwein, R. Dimitrov, O. Ambacher, M. S. Brandt, and M. Stutzmann,
Phys. Rev. B 61 (2000) R16283.

Influenceof oxygen and methane plasma on the electrical properties ofundopedAlGaN/GaN heterostructures for high power transistors
R.Dimitrov,V. Tilak, W. Yeo, B. Green, H. Kim, J. Smart, E. Chumbes, J.R. Shealy,W. J. Schaff, and L .F. Eastman, C. Miskys, O. Ambacher, andM.Stutzmann,
Sol. Stat. Electr. 44 (2000) 1361.

The polarization-induced electron gas in a heterostructure
B. K. Ridley, O. Ambacher, and L. F. Eastman,
Semicond. Sci. Technol. 15 (2000) 270.

Magnetic Resonance Investigations of Defects in Ga14N and Ga15N
M. W. Bayerl, N. M. Reinacher, H. Angerer, O. Ambacher, M. S. Brandt, and M. Stutzmann,
J. Appl. Phys. 88 (2000) 3249.

GaN homoepitaxy by metalorganic chemical-vapor deposition on free-standing GaN substrates
C. R. Miskys, M. K. Kelly, O. Ambacher, G. Martinez-Criado, and M. Stutzmann,
Appl. Phys. Lett. 77 (2000) 1858.

Influence of crystal polarity on the properties of GaN/Pt Schottky diodes
U. Karrer, O. Ambacher, and M. Stutzmann,
Appl. Phys. Lett. 77 (2000) 2012.

Optical characterization of Mg-doped GaN films grown by metalorganic chemical vapor phase deposition
G. Martinez-Criado, A. Cros, A. Cantarero, R. Dimitrov, O. Ambacher, and M. Stutzmann,
J. Appl. Phys. 88 (2000) 3470.

Growth of quaternary AlNGaN/GaN heterostructures by plasma-induced molecular beam epitaxy
A. P. Lima, C. R. Miskys, U. Karrer, O. Ambacher, A. Wenzel, B. Rauschenbach, and M. Stutzmann,
J. Cryst. Growth 220 (2000) 341-344.

Polarization induced effects in AlGaN/GaN heterostructures
O. Ambacher,
Acta Phys. Pol. A 98 (2000) 195.

Realtime spectroscopic ellipsometry monitoring of the SiC growth during theinteraction process of elemental carbon with Si surfaces
T. Wöhner, V. Cimalla, Th. Stauden, J. A. Schaefer, and J. Pezoldt,
Thin Solid Films 364 (2000) 28.

The influence of the implantation sequence on the (SiC)1-x(AlN)x formation
J. Pezoldt, P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, M. Voelskov, and U. Kreissig,
Nucl. Instrum. Methods Phys. Res. B 166 (2000) 761.

In situ monitoring of the effect of Ge on the SiC growth on Si surfaces
T. Wöhner, Th. Stauden, J. A. Schaefer, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, part 1, 338 (2000) 281.

Structural investigations of the nucleation and growth of SiC during rapid thermal conversion of (111)Si
V. Cimalla, W. Attenberger, J. K. N. Lindner, B. Stritzker, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, part 1, 338 (2000) 285.

The influence of foreign atoms on the the early stages of SiC growth on (111)Si
J. Pezoldt, P. Masri, M. Roughani Laridjani, P. Falgayrettes,
M. Averous, T. Wöhner, Th. Stauden, G. Ecke, and R. Pieterwas, and L. Spieß
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, part 1, 338 (2000) 289.

The diffusion coefficient of silicon in thin SiC layers as a criterion for the quality of the grown layers
V. Cimalla, Th. Wöhner, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, part 1, 338 (2000) 321.

Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth
P. Masri, M. Rouhani Lourdjani, T. Wöhner, J. Pezoldt, and M. Averous,
Comp. Mater. Sci. 17 (2000) 544.

Investigation of the nucleation and growth of SiC nanostructures on Si
F. Scharmann, P. Maslarski, Th. Stauden, W. Attenberger,
J. K. N. Lindner, B. Stritzker, and J. Pezoldt,
Thin Solid Films 380 (2000) 92.

A new method of the determination of significant factors with factor analysis in AES
R. Pieterwas, G. Ecke, R. Kosiba, and H. Rößler,
Fresenius J. Anal. Chem. 368 (2000) 326.

Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H. Romanus, V. Cimalla, J. A. Schaefer, L. Spieß, G. Ecke,
and J. Pezoldt,
Thin Solid Films 359 (2000) 146.

Cubic GaN epilayers grown by molecular beam epitaxy on thin ß-SiC/Si(001) substrates
D. J. As, T. Frey, D. Schikora, K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt,
Appl. Phys. Lett. 76 (2000) 1686.

1999

Excitonic transitions in cubic AlGaN
G. Salvati, C. Zanotti-Fregonara, M. Albrecht, N. Armani, S. Christiansen, H. P. Strunk, H. Angerer, O. Ambacher, and M. Stutzmann,
Microscopy of Semiconducting Materials, Proc. Inst. Phys. Conf. 164 (1999) 419.

Dielectric function of hexagonal AlN films determined
by spectroscopic ellipsometry in the vacuum-uv spectral range
T. Wethkamp, K. Wilmers, C. Cobet, N. Esser, W. Richter, O. Ambacher, M. Stutzmann and M. Cardona,
Phys. Rev. B 59 (1999) 1845.

Large free-standing GaN substrates by hydride vapor phase epitaxy and laser-induced lift off
M. K. Kelly, R. P. Vaudo, V. M. Phanse, L. Görgens, O. Ambacher, and M. Stutzmann,
Jpn. J. Appl. Phys. 38 (1999) L217.

Growth of piezoelectric HEMT structures on sapphire and silicon carbide applying insulating AlGaN nucleation layer
J. A. Smart, A. T. Schremer, N. G. Weimann, O. Ambacher, L. F. Eastman, and J. R. Shealy,
Appl. Phys. Lett. 75 (1999) 388.

Two dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck,
J. Appl. Phys. 85 (1999) 3222.

Compositional disorder in GaInN/GaN double heterostructures investigated by selectively excited photoluminescence and Raman spectroscopy
N. Wieser, O. Ambacher, H.-P. Felsl, L. Görgens, M. Stutzmann,
Appl. Phys. Lett. 74 (1999) 3981.

MBE Growth of Normal and Inverted Two-Dimensional Electron Gases in AlGaN/GaN Based Heterostructures
M. J. Murphy, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, J. Smart, J. R. Shealy, L. F. Eastman, and T. J. Eustis,
J. Vac. Sci. Technol. B 17 (1999) 1252.

Comparison of N-face and Ga-face AlGaN/GaN-based high electron mobility transistors grown by plasma-induced molecular beam epitaxy
R. Dimitrov, A. Mitchell, L. Wittmer, O. Ambacher, M. Stutzmann, J. Hilsenbeck, and W. Rieger,
Jpn. J. Appl. Phys. 38 (1999) 4962.

Influence of strain and buffer layer type on In incorporation during GaInN MOVPE
F. Scholz, J. Off. A. Kniest, L. Görgens, and O. Ambacher,
Mater. Sci. Eng. B 59 (1999) 268.

High frequency AlGaN/GaN PI-HEMTs grown by plasma assisted molecular beam epitaxy
M. J. Murphy, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, T. J . Eustis, and L. F. Eastman,
Appl. Phys. Lett. 75 (1999) 3653.

Transmission spectra of InGaN single quantum wells and InGaN/GaN heterostructures grown by metalorganic chemical vapor deposition
J. W. Kim, Y. K. Park, Y. T. Kim, C. S. Son, I. H. Choi, O. Ambacher, and M. Stutzmann,
J. Korean Phys. Soc. 35 (1999) 42.

Characterization of the absorption edges of epitaxial AlGaN layers grown by plasma-induced molecular beam epitaxy
J. W. Kim, C. S. Son, I. H. Choi, Y. K. Park, Y. T. Kim, O. Ambacher, and M. Stutzmann,
J. Korean Phys. Soc. 35 (1999) 279.

MOCVD-epitaxy on free-standing HVPE-GaN substrates
C. R. Miskys, M. K. Kelly, O. Ambacher, and M. Stutzmann,
phys. stat. sol. (b) 216 (1999) 443.

Gallium nitride moves into the blue
O. Ambacher,
Vacuum Solutions 3 (1999) 11.

Polarization Induced Charge at Heterojunctions of the III-V Nitrides and Their Alloys
B. E. Foutz, O. Ambacher, M. J. Murphy, V. Tilak, and L. F. Eastman,
phys. stat. sol. (b) 216 (1999) 415.

Role of Spontaneous and Piezoelectric Polarization Induced Effects in Group-III Nitride Based Heterostructures and Devices
O. Ambacher, R. Dimitrov, M. Stutzmann, B. E. Foutz, M. J. Murphy, J. A. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Chumbes, B. Green, A. J. Sierakowski, W. J. Schaff, and L. F. Eastman,
phys. stat. sol. (b) 216 (1999) 381.

AlGaN based ultra violet light detectors with interated optical filters
U. Karrer, A. Dobner, M. Stutzmann, and O. Ambacher,
sol. stat. phys. (b) 216 (1999) 807.

Disorder-Activated Scattering and Two-Mode Behavior in Raman Spectra of Isotopic GaN and AlGaN
N. Wieser, O. Ambacher, H. Angerer, R. Dimitrov, M. Stutzmann, B. Stritzker, and J. K. N. Lindner,
phys. stat. sol. (b) 216 (1999) 807.

Composition Analysis Using Elastic Recoil Detection
L. Görgens, G. Dollinger, A. Bergmaier, O. Ambacher, L. F. Eastman, J. A. Smart, J. R. Shealy, R. Dimitrov, M. Stutzmann, and A. Mitschel,
phys. stat. sol. (b) 216 (1999) 679.

Reflectance Difference Spectroscopy Characterization of AlxGa1-xN-Compound Layers
U. Rossow, D. E. Aspnes, O. Ambacher, V. Cimalla, N.V. Edwards, M. Bremser, R. F. Davis, J. A. Schaefer, and M. Stutzmann,
phys. stat. sol. (b) 216 (1999) 215.

Normal and inverted AlGaN/GaN based piezoelectric field effect transistors grown by plasma induced molecular beam epitaxy
M. J. Murphy, B. E. Foutz, K. Chu, H. Wu, W. Yeo, W. J. Schaff, O. Ambacher, L. F. Eastman, T. J. Eustis, R. Dimitrov, M. Stutzmann, and W. Rieger,
MRS Internet. J. Nitride Semicond. Res. 4S1 (1999) G8.4.

Persistent Photoconductivity and Optical Quenching in GaN- and AlGaN-films: Spectral Dependence and Interface Effects
O. P. Seifert, M. T. Hirsch, O. Kirfel, J. Parisi, O. Ambacher, M. Kelly, and M. Stutzmann,
MRS Internet. J. Nitride Semicond. Res. 4S1 (1999) G5.5.

The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. (1999).

A novel (SiC)1-x(AlN)xcompound synthesized using ion beams
J. Pezoldt, R. A. Yankov, A. Mücklich, W. Fukarek, M. Voelskow, H. Reuther, and W. Skorupa,
Nucl. Instrum. Methods Phys. Res. B 147 (1999) 273.

Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, G. Ecke, W. Fukarek, W. Skorupa, and J. Pezoldt,
Nucl. Instrum. Methods Phys. Res. B 147 (1999) 279.

Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods
J. Pezoldt, R. A. Yankov, T. Werninghaus, D. R. T. Zahn, W. Fukarek, G. Teichert, M. Luebbe, and W. Skorupa,
Diam. Relat. Mater. 8 (1999) 346.

Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon
J. Scheiner, R. Goldhahn, V. Cimalla, G. Ecke, W. Attenberger, J. K. N. Lindner, G. Gobsch, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 526.

Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si
W. Attenberger, K. K. N. Lindner, V. Cimalla, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 544.

Influence of the heating ramp on the heteroepitaxial growth of SiC on Si
V. Cimalla, Th. Stauden, G. Eichhorn, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 553.

Reflectivity study of hexagonal GaN films grown on GaAs: Surface roughness, interface layer, and refractive index
S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, T. J. Foxon,
Appl. Phys. 84 (1999) 1561.

The influence of ion beam sputtering on the composition of the near surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. 365 (1999) 195.

1998

Seperation of structural defects in MOCVD grown GaN and AlN films on c-plane sapphire by HR-XRD
T. Metzger, R. Stömmer, M. Schuster, H. Göbel, E. Born, O. Ambacher, and M. Stutzmann,
Adv. X-Ray. Anal. 40 (1998) 11.

Defect Structure of epitaxial GaN films determined by Transmission Electron Microscopy and Triple-Axis X-ray Diffractometry
T. Metzger, R. Höpler, E. Born, O. Ambacher, M. Stutzmann, T. H. Metzger, R. Stoemmer, M. Schuster, H. Göbel, S. Christiansen, M. Albrecht, and H. P. Strunk,
Phil. Mag. A 77 (1998) 1013.

Quantitative TEM investigations to the relaxation by misfit dislocations confined at the interface of GaN/Al2O3(0001)
S. Kaiser, H. Preis, W. Gebhardt, O. Ambacher, H. Angerer, M. Stutzmann, A. Rosenauer, and D. Gerthsen,
Jpn. J. Appl. Phys. 37 (1998) 84.

Absorption of InGaN single quantum wells determined by photothermal deflection spectroscopy
O. Ambacher, D. Brunner, R. Dimitrov, M. Stutzmann, F. Scholz, and A. Sohmer,
Jpn. J. Appl. Phys. 37 (1998) 745.

Spectroscopic Ellipsometry Measurements of AlxGa1-xN in the Energy Range 3-25 eV
T. Wethkamp, K. Wilmers, N. Esser, W. Richter, O. Ambacher, H. Angerer, G. Jungk, R. L. Johnson, and M. Cardonna,
Thin Solid Films, 313 (1998) 745.

Nitrogen self-diffusion in Ga14N/Ga15N isotope heterostructures
O. Ambacher, F. Freudenberg, R. Dimitrov, H. Angerer, and M. Stutzmann,
Jpn. J. Appl. Phys. 37 (1998) 2416.

Sound velocity of AlxGa1-xN thin films obtained by surface acoustic wave measurements
C. Deger, E. Born, H. Angerer, O. Ambacher, M. Stutzmann, J. Hornsteiner, E. Riha, and G. Fischerauer,
Appl. Phys. Lett. 72 (1998) 2400.

Polarity determination of GaN thin films on sapphire (0001) with x-ray standing waves
A. Kazimirov, G. Scherb, J. Zegenhagen, T. L. Lee, M. J. Bedzyk, M. K. Kelly, H. Angerer, and O. Ambacher,
J. Appl Phys. 84 (1998) 1703.

Thermopower investigation of p-type doping in GaN
M. S. Brandt, P. Herbst, H. Angerer, O. Ambacher, M. Stutzmann,
Phys. Rev. B 58 (1998) 7786.

Nanoscale hexagonal Gallium Nitride from single molecule precursors: microstructure and crystallite size dependent photoluminescence
A. C. Frank, F. Stowasser, C. R. Miskys, O. Ambacher, M. Giersig, and R. A. Fischer,
phys. stat. sol. (a) 165 (1998) 239.

Detonations of gallium azides: A simple route to hexagonal GaN nanocrystals
A. C. Frank, F. Stohwasser, C. R. Miskys, O. Ambacher, M. Giersig, and R. A. Fischer,
J. Am. Chem. Soc. 120 (1998) 3512.

Comparative Determination of Absolute Raman Scattering Efficiencies and Application to GaN
I. Loa, S. Gronemeyer, C. Thomsen, O. Ambacher, D. Schikora, and D.J. As,
J. Raman Spectr. 29 (1998) 291.

Analysis of composition fluctuation on an atomic scale in Al0.25Ga0.75N by high-resolution transmission electron microscopy
B. Neubauer, A. Rosenauer, D. Gerthsen, O. Ambacher, and M. Stutzmann,
Appl. Phys. Lett. 73 (1998) 930.

Time-resolved photoluminescence study of excitons in hexagonal GaN layers grown on sapphire
S. Pau, Z. X. Liu, J. Kuhl, J. Ringling, H. T. Grahn, M.A. Khan, C. J. Sun, O. Ambacher, and M. Stutzmann,
Phys. Rev. B 57 (1998) 7066.

Electrical Confinement in AlGaN/GaN heterostructures grown by plasma induced molecular beam epitaxy
Dimitrov, L. Wittmer, H. P. Felsl, A. Mitchell, O. Ambacher, and M. Stutzmann,
phys. stat. sol. (a) 168 (1998) R7.

Electrical and structural properties of AlGaN: a comparison with CVD diamond
M. Stutzmann, O. Ambacher, H. Angerer, C. Deger, R. Dimitrov,
Diam. Relat. Mater. 7 (1998) 123.

Negative electron affinity of cesiated p-GaN (0001) surfaces
M. Eyckeler, W. Mönch, T. U. Kampen, R. Dimitrov, O. Ambacher, and M. Stutzmann,
J. Vac. Sci. Technol. B 16 (1998) 2224.

Microstructural Characterization of Nanocrystalline GaN Prepared by Detonations of Gallium Azides
A. C. Frank, F. Stohwasser, O. Stark, H.-T. Kwak, H. Sussek, A. Rupp, H. Pritzkow, O. Ambacher, M. Giersig, and R. A. Fischer,
Adv. Mater. Opt. Electron. 8 (1998) 135.

SEM-EBIC sudy of defects in epitaxial AlGaN layers
G. N. Panin, O. V. Kononenko, V. N. Matveev, E. B. Yakimov, and O. Ambacher,
Solid State Phenomena 63 (1998) 131.

Growth and Applications of Group-III-Nitrides
O. Ambacher,
J. Phys. D: Appl. Phys. 31 (1998) 2653.

Elemental Analysis on Group-III-Nitrides using Heavy Ion ERD
G. Dollinger, S. Karsch, O. Ambacher, H. Angerer, A. Bergmaier, G. Schmelmer, and M. Stutzmann,
Mat. Res. Soc. Symp. Proc. 482 (1998) 745.

Sputtering-induced Surface Roughness of Polycrystalline Al Films and its Influence on AES Depth Profiles
Th. Wöhner, G. Ecke, H. Rößler, and S. Hofmann,
Surf. Interface Anal. 26 (1998) 1.

Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions
D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, J. Pezoldt, W. Skorupa,
Tech. Phys. Lett. 24 (1998) (1) 17.

Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
J. Pezoldt, Th. Stauden, V. Cimalla, G. Ecke, H. Romanus, and G. Eichhorn,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 251.

The measurement of the thickness of thin SiC layers on Silicon
V. Cimalla, J. Scheiner, G. Ecke, M. Friedrich, R. Goldhahn, D. R. T. Zahn, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 641.

Cross-sectional micro-Raman spectroscopy: A tool for structural invetigations of thin polytypic SiC layers
T. Werninghaus, D. R. T. Zahn, R. A. Yankov, A. Mücklich, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 661.

Ion beam synthesis: A novel method of producing (SiC)1-x(AlN)x layers
R. A. Yankov, W. Fukarek, M. Voelskow, J. Pezoldt, W. Skorupa,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 2, 264 (1998) 753.

A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high dose N+ and Al+ co-implantation
V. Trushin, R. A. Yankov, V. S. Kharlamov, D. V. Kulikov, D. N. Tsigankov, U. Kreissig, M. Voelskow, J. Pezoldt, and W. Skorupa,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 2, 264 (1998) 757.

Deposition of aluminum nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
G. Ecke, G. Eichhorn, J. Pezoldt, C. Reinhold, Th. Stauden, and F. Supplieth,
Surf. Coat. Technol. 98 (1998) 1503.

Auger investigations of thin SiC films
G. Ecke, H. Rößler, V. Cimalla, J. Pezoldt, and Th. Stauden,
Fresenius J. Anal. Chem., 361 (1998) 564.

Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)
T. Werninghaus, M. Friedrich, V. Cimalla, J. Scheiner, R. Goldhahn, D. R. T. Zahn, and J. Pezoldt,
Diam. Relat. Mater. 7 (1998) 1385.

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, S. Sloboshanin, J.A. Schaefer, and J. Pezoldt,
Appl. Phys. Lett. 73 (1998) 3542.

Analysis of reflectivity measurements for GaN films grown on GaAs: Influence of surface roughness and interface layer
S. Shokhovets, R. Goldhahn, V. Cimalla, T. S. Cheng, C. T. Foxon,
Mater. Sci. Forum 264 (1998) 1347.

Konferenzen

Localized Programmable Gas Phase Electrodeposition; A new Transport Process with Applications Ranging from the Deposition of Functional Nanostructures to the Collection and Identification of Airborne Species for Sensing Applications
L. Schlag, T. Stauden, J. Pezoldt, H.O. Jacobs
22nd International Conference and Expo on Nanoscience and Molecular Nanotechnology, Frankfurt, 2017

Selbstjustierendes Wachstum von 3D Nano-Brücken-Verbindungen
L. Schlag, Johannes Reiprich, T. Stauden, J. Pezoldt, A. Ispas, P. Schaaf, A. Bund, H.O. Jacobs Mikrosystemtechnik Kongress, München, 2017

2D electronics – oportunities and limitations
Z. Geng, W. Kinberger, R. Granzner, J. Pezoldt, F. Schwierz
In: Proceedings of the 46th European Solid-State Device Research Conference (ESSDERC2016), 12th – 15th Sept. 2016, Laussane, Switzerland, IEEE, Piscataway, Curan Associates Inc., Red Hook, New York, 2016, pp. 250-255

Self-Aligned Growth of 3D Nanoparticle-Bridge-Based Interconnects by Gas Phase Electrodeposition

J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt, H.O. Jacobs
2nd International Symposium on Nanoparticles/Nanomaterials and Applications, Lissabon, 2016

Self-Aligned Growth of 3D Nano-Bridge-Based Interconnects by Gas Phase Electrodeposition
J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt, H.O. Jacobs
3rd CPFN, Ilmenau, 2016

Application of nanostructuring, nanomaterials and micro-nano-integration for improved components and system's performance
T. Hannappel, M. Hoffmann, H.O. Jacobs, Y. Lei, I. Rangelow, P. Schaaf,
Pan Pacific Microelectronics Symposium. Pan Pacific, Seiten 1-10. IEEE (2016)

Influence of thermal and oxidative treatments on the electronic surface properties of In2O3 films
T. Berthold, T. Stauden, S. Krischok, M. Himmerlich, M. Mischo, V. Cimalla, J. Rombach, O. Bierwagen
Verhandlungen der DPG, Regensburg. (2016)

Large-Area Fabrication of TiN Nanoantenna Arrays for Refractory Plasmonics in the Mid-Infrared
S. Bagheri, C.M. Zgrabik, T. Gissibl, A. Tittl, F. Sterl, R. Walter, S. De Zuani, A. Berrier, T. Stauden, G. Richter, E.L. Hu, H. Giessen
Verhandlungen der DPG, Regensburg. (2016)

Influence of thermal and oxidative treatments on the chemical and electronic surface properties of In2O3
T. Berthold, T. Stauden, S. Krischok, M. Himmerlich, M. Mischo, V. Cimalla, J. Rombach, O. Bierwagen,
E-MRS 2016 SPRING MEETING, Lille. (2016)

Self-Aligned Growth of 3D Nano-Bridge-Based Interconnects by Gas Phase Electrodeposition
J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt, H.O. Jacobs
2nd CPFN, Ilmenau, 2015

Effective Localized Collection and Identification of Airborne Species Through Electrodynamic Precipitation and SERS-Based Detection
H.O. Jacobs
4th Annual Conference and EXPO of AnalytiX-2015, Nanjing, China, April 25 to 28, (2015)

Localized collection of airborne analytes: A transport driven approach to improve the response time of existing gas sensor designs including SERS based detection of small molecules
J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt, H.O. Jacobs
MRS Online Proc., Symposium GG:

Nanomaterials for harsh environment sensors and related electronic components – design, Synthesis, caracterization and utilization
Vol. 1746 (2015), DOI: http://dx.doi.org/10.1557/opl.2015.398

GaN HEMTs on Si substrate with high cutoff frequency
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt,
p. 117 - 120, In: Conference Proceedings of the 10th International Conference on Advanced Semiconductor Devices and Microsystems (ASDAM 2014), 20th - 22nd October 2014, Smolenics Castle, Slovakia, ISBN 978-1-4799-5474-2

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs including SERS based Detection of Small Molecules
J. Fang, Se-Chul Park, L. Schlag, T. Stauden, J. Pezoldt, H. O. Jacobs
S.62-65, In: GMM-Fachberichte 81 (2014), Tagungsband der 5. GMM Workshop “Mikro-Nano-Integration”

Effective Localized Collection and Identification of Airborne Species Through Electrodynamic Precipitation and SERS-Based Detection
H. O  Jacobs
4th Annual Conference and EXPO of AnalytiX-2015, Nanjing, China, April 25 to 28, 2015.2014

 

Localized Programmable Gas Phase Electrodeposition and Its Application
L. Schlag, J.
Fang, J. Pezoldt, T. Stauden, S.-C Park, H. O. Jacobs
1st International Conference & 3rd International MacroNano-Colloquium on the Challenges and Perspectives of Functional Nanostructures, Technische Universität Ilmenau; 07/2014

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs including SERS based Detection of Small Molecules
J. Fang, , S.-C. Park, L. Schlag, T. Stauden, J. Pezoldt, , H. O. Jacobs
5. GMM Workshop zur Mikro- und Nano-Integration der VDE/VDI, 8. bis 9. Oktober 2014 in Ilmenau, GMM-Fachbericht Band 81

Automated reel-to-reel fluidic self-assembly enabling the production of solid state lighting panels
S.-C. Park, J. Fang, S. Biswas, M. Mozafari, T. Stauden, H.O. Jacobs
5.
GMM Workshop zur Mikro- und Nano-Integration der VDE/VDI, 8. bis 9. Oktober 2014 in Ilmenau, GMM-Fachbericht Band 81

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs including SERS based Detection of Small Molecules
L. Schlag, J. Fang, H.O. Jacobs
Conference: ICORS 2014, At Friedrich-Schiller-Universität Jena

Automated reel-to-reel fluidic self-assembly enabling the production of solid state lighting panels
S.-C. Park, J., Fang, S. Biswas, M. Mozafari, T. Stauden, H.O. Jacobs,
2014 Materials Research Society Fall Meeting, Boston, US, Nov. 30 – Dec. 5 (2014)

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs including SERS Based Detection of Small Molecules Annual
H.O. Jacobs
Conference and EXPO of AnalytiX-2014 Dalian, China

2010

Silicon nanoresonator
M. Hofer, Th. Stauden, S.A.K. Nomvussi, J. Pezoldt, I.W. Rangelow
Sensor und Messsysteme 2010, Nürnberg, Germany (18. – 19.5.2010), Konferenzbeiträge der 15. ITG-/GMA-Fachtagung “Sensoren und Messsysteme 2010", VDE Verlag GmbH, ISBN 978-3-8007-3260-9,  Berlin, Offenbach, 2010, pages 330 - 333

FTIR ellipsometry of SiC heterostructures
J. Pezoldt
EMRS Spring Meeting 2010, Symposium F: Wide bandgap cubic semiconductors: from growth to devices, Strasbourg, France, (7. – 11.6.2010), AIP Conf. Ser. Proc. 1292 (2010) pages 83 - 86

Temperature facilated ECR-etching for isotropic SiC structuring
F. Niebelschütz, Th. Stauden, K. Tonisch, J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 849-852

Property modification of 3C-SiC MEMS on Ge-modified Si(100) substrates
F. Niebelschütz, W. Zhao, K. Brueckner, K. Tonisch, M. Linß, M.A. Hein,  J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 861-864

2H-AlGaN/GaN HEMTs on 3C-SIC(111)/Si(111) substrates
K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann, F. Schwierz, J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 1219-1222

Tuning residual stress in 3C-SiC(100) on Si(100)
J. Pezoldt, Th. Stauden, F. Niebelschütz, M.A. Alsioufy, R. Nader, P. Masri
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 159-162

Nanostructuring techniques for 3C-SiC(100) NEMS structures
M. Hofer, Th. Stauden, I.W. Rangelow, J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 841-844



2009

Nonpolar cubic AlGaN/GaN HFETs grown by MBE on 3C-SiC/Si(001)
E. Tschumak, J. Pezoldt, D.J. As 
15th European Molecular Beam Epitaxy Workshop, March 8th - 11th, Zakopane, Poland, 2009

Graphene transitors - Breakthrough or Ballyhoo?
F. Schwierz, Ch. Hummel,  J. Pezoldt
EMRS Spring Meeting 2009, Symposium N: Carbon Nanotubes and Graphene Low Dimensional Carbon Structures,  June 8th - 12th, Strasbourg, France, (2009)
 

Graphene as FET channel material - What are the benefits?
F. Schwierz, J. Pezoldt
54th International Scientific Colloquium (54. IWK): Information Technology and Electrical Engineering - Devices and Systems, Materials and Technologies for the Future, Technische Universität  Ilmenau, Germany, September  7th - 10th, 2009

Top gated graphene transistors with different gate insulators
  J. Pezoldt, Ch. Hummel, A. Hanisch, I. Hotovy, M. Kadlecikova, F. Schwierz
12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology (ICFSI-12), Weimar, July 5th - 10th, Germany, 2009

Ambient and temperature dependent electric Properties of backgate graphene transistors
Ch. Hummel, F. Schwierz, J. Pezoldt
EMRS Spring Meeting 2009, Symposium N: Carbon Nanotubes and Graphene Low Dimensional Carbon Structures,  June 8th - 12th, Strasbourg, France, 2009

Carbyne on SiC
J. Pezoldt
EMRS Spring Meeting 2009, Symposium O: Science and Technology of sp2 Carbon allotropes,  June 8th - 12th, Strasbourg, France, 2009

Resonant Piezoelectric AlGaN/GaN MEMS Sensors in Longitudinal Mode Operation
K. Brückner, F. Niebelschütz, K. Tonisch, R. Stephan, V. Cimalla, O. Ambacher and M.A. Hein
Proceeding der IEEE MEMS Conference, Sorrento, Italien, 25.-29.01.2009

2008

PECVD silicon nitride thin films: properties
P. Bohacek , J. Huran , A.P. Kobzev , N.I. Balalykin , J. Pezoldt
ASDAM 2008, Proceedings of the 7th International  Conference on Advanced Semiconductor Devices and Microsystems, Eds. S. Hascik, J. Osvald, Piscataway: IEEE (2008) 291-294

Hydrogenated carbon films preparedby plasma-enhanced chemical vapour deposition

J. Huran , A.P. Kobzev , N.I. Balalykin , J. Pezoldt
ASDAM 2008, Proceedings of the 7th International  Conference on Advanced Semiconductor Devices and Microsystems, Eds. S. Hascik, J. Osvald, Piscataway: IEEE, (2008) 127-130

Lattice location determination of Ge in SiC by ALCHEMI

T. Kups, M. Voelskow, W. Skorupa, M. Soueidan, G. Ferro, J. Pezoldt 
Microscopy of Semiconducting Materials 2007; Proceedings of the 15th Conference, April 2nd - 5th, Oxford, 2005, Springer Proceedings in Physics Vol. 120, Eds. Cullins A.G., Midgley P.A.., Springer, Berlin 2007 (not 2008) 353-358

2007


Wide band gap amorphous silicon carbide films deposited by PECVD
J. Huran, I. Hotovy, J.Pezoldt, N.I. Balalykin, A.P. Kobzev
In: Light Sources 2007; Proceedings of the 11th International Symposium on the Science and Technology of Light Sources (ISBN 978-0-9555445-0-7), Ed. Liu M.Q.,  Fudan University, Shanghai, China, May 20th - 24th (2007) 61-62

Nanomechanics with nanowires and nano-electro-mechanical systems
V. Cimalla, K. Brückner, A.W. Hassel, S. Milenkovic, M.A. Hein, F. Niebelschütz, M. Niebelschütz, J. Pezoldt, H. Romanus, C.-C. Röhlig, K. Tonisch, J. Weber, and O. Ambacher
Proc. Intern Workshop Nanostruct. Thin Films (NANOHARD 2007) May 13-16 2007, Velingrad, Bulgaria (Eds. R. Kakanakov and L. Kolaklieva), 2007, p. 27-48.

Resonant Sensors for Microfluidic Applications

F. Niebelschütz, K. Tonisch, V. Cimalla, K. Brückner, R. Stephan, M. Hein, A. Schober, and O. Ambacher
MRS Symp. Proc. 951 (2007) E05-07

Fully Unstrained GaN on Thick AlN Layers for MEMS Application

K. Tonisch, F. Niebelschuetz, V. Cimalla, H. Romanus, and O. Ambacher
MRS Symp. Proc. 955 (2007) I16-03.

2006

RF plasma deposition of thin amorphous silicon carbide films using a combination of silan and methane
J. Huran, I. Hotovy, J. Pezoldt, N.I. Balalykin, Kobzev A.P.
ASDAM 2006, Proceedings of the 6th International  Conference on Advanced Semiconductor Devices and Microsystems (ISBN 1-4244-0396-0), Eds. J. Breza et al., Piscataway: IEEE (2006)  59-62

Setup for colorimetric measurements of aqueous micro- and nanoliter droplets
B. Lübbers, G. Kittler, V. Cimalla, M. Gebinoga, C. Buchheim, D. Wegener, and O. Ambacher
Proceedings of the 51 IWK (2006) 249.

AlGaN/GaN-sensors for monitoring of enzyme activity by pH-measurements
G. Kittler, A. Spitznas, B. Lübbers, V. Lebedev, D. Wegener, A. Schober, M. Gebinoga, F. Schwierz, V. Polyakov, F. Weise, and O. Ambacher
Proceedings of the 51 IWK (2006) 251.

Eine neue Klasse von Sensoren für mikro- und nanofluidische Systeme für biotechnologische Anwendungen
J. Burgold, F. Weise, A. Schober, G. Kittler, B. Lübbers, V. Cimalla, M. Fischer, A. Spitznas, M. Gebinoga, I. Cimalla, and V. Yanev
3. Workshop Chemische und Biologische Mikrolabortechnik (2006)

Low Energy Ion Modification of 3C-SiC Surfaces
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, and J. Pezoldt
Silicon Carbide and Related Materials 2005 (ICSCRM 2005), Mater. Sci. Forum 527-529, (2006) 685–688.

Micromachining of Novel SiC on Si Structures for Device and Sensor Applications
Ch. Foerster, V. Cimalla, M. Stubenrauch, C. Rockstuhl, K. Brueckner, M. Hein, J. Pezoldt, and O. Ambacher
Silicon Carbide and Related Materials 2005 (ICSCRM 2005), Mater. Sci. Forum 527-529, (2006) 1111–1114.

A new type of highly sensitive portable ozone sensor operating at room temperature
Ch. Y. Wang, V. Cimalla, C.-C. Röhlig, Th. Stauden, F. Niebelschuetz, O. Ambacher, O. Kiesewetter, and S. Kittelmann
5th IEEE Conference on Sensors, EXCO, Daegu, Korea, October 22.-26. 2006, 81-84.
 
Fully Unstrained GaN on Thick AlN Layers for MEMS Application
K. Tonisch, V. Cimalla, F. Will, H. Romanus, M. Eickhoff, and O. Ambacher
MRS Fall Meeting 2006, Hynes Convention Center and Shereton Hotel, Boston, MA, Nov. 27 - Dez. 1, 2006

AlGaN/GaN-sensors for Monitoring of Enzyme Activity by pH-Measurements
G. Kittler, A. Spitznas, B. Lübbers, V. Lebedev, D. Wegener, M. Gebinoga, F. Weise, A. Schober, and O. Ambacher
MRS Fall Meeting 2006, Hynes Convention Center and Shereton Hotel, Boston, MA, Nov. 27 - Dez. 1, 2006

III-Nitride Nanocolumnar Heterostructures: Growth, Properties and Application to Devices
E. Calleja, J. Ristić, L. Cerutti, S. Fernández-Garrido, A. Trampert, U. Jahn, K. H. Ploog, M. Gurioli, A. Vinattieri, M. Povoloskyi, A. di Carlo, S. Lazic, J. M. Calleja, M. Niebelschütz, V. Cimalla, O. Ambacher
Summerschool on Wide-bandgap Semiconductor Quantum Structures August 27 - September 1, 2006 / Monte Verità (Ascona), Switzerland

New approach for nanowires fabrication for integration in sensor applications

R. Adelung, D. Cengher, V. Cimalla, F. Will, Ch. Foerster, M. Elbahri, S. Jebril, S. K. Raudra and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 235

Micro- and nanomechanical resonators for sensing Applications
F. Will, K. Tonisch, V. Cimalla, D. Cengher, C. Haupt, K. Brückner, R. Stephan, M. Hein and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 241

First steps towards a nanowire-based electromechanical biomimetic sensor
K. Tonisch, V. Cimalla, F. Will, C. Haupt, D. Cengher, F. Weise, M. Stubenrauch, A. Albrecht, M. Hoffmann, O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau,
September 11 – 15, (2006) 243

SiC-based FET for NOx gas sensing applications using InVOx metal oxides as a gate material
M. Ali, G. Ecke, V. Cimalla, Th. Stauden, V. Tilak, P. Sandvik, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 245

Setup for colorimetric measurements of aqueous microand nanoliter droplets
B. Lübbers, G. Kittler, V. Cimalla, M. Gebinoga, C. Buchheim, D. Wegener, Schober and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 249

AlGaN/GaN-sensors for monitoreing og enzyme activity by pH-measurements
G. Kittler, A. Spitznas, B. Lübbers, V. Lebedev, D. Wegener, A. Schober, M. Gebinoga, F. Schwierz, V. Polyakov, F. Weise, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 251

Composition Measurements of Group-III Nitride Ternary and Quaternary Compound Nanostructures by AES
G. Ecke, T. Baumann, O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 253

Work Function Analysis of GaN-based Lateral Polarity Structures by Auger Electron Energy Measurements
M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 297

Impact of device processing on the surface properties and the biocompatibility of AlGaN/GaN HEMT sensors
I. Cimalla, F. Will, K. Tonisch, V. Lebedev, M. Niebelschütz, M. Himmerlich, S. Krischok, V. Cimalla, G. Kittler, C. Kremin, T. Friedrich and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 299

Origin of n-type conductivity in nominally undoped InN
V. Cimalla, V. Lebedev, F. M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 303

Tuning of electrical properties of InxOy thin films grown by MOCVD for different applications
Ch. Wang, V. Cimalla, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 311

Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene):fullerene
M. Al-Ibrahim, O. Ambacher, G. Gobsch, U. Ritter
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 317

Self organization and properties of Black Silicon
M. Fischer, M. Stubenrauch, Th. Kups, H. Romanus, F.M. Morales, G. Ecke, M. Hoffmann, C. Knedlik, O. Ambacher and J. Pezoldt
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 237

Hetereopolytype and low dimensional structures in SiC
J. Pezoldt
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 263

Simulation of quality of SiC/Si interface during MBE deposition of C on Si
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, J. Pezoldt, Yu.V. Trushin
51st Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, September 11 – 15, (2006) 307

Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
G. Ferro, M. Soueidan, C. Jacquier, P. Godignon, Th. Stauden, J. Pezoldt, M. Lazar, J. Montserrat, Y. Monteil
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 275 - 279

Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
J. Pezoldt, F.M. Morales, Th. Stauden, Ch. Förster, E. Polychroniadis, J. Stoemenos, D. Panknin, W. Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 295 - 298

Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
A.A. Schmidt, Yu.V. Trushin, K.L. Safonov, V.S. Kharlamov, D.V. Kulikov, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 315 - 318

Low Energy Ion Modification of 3C-SiC Surfaces
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 685 - 688

High Dose High Temperature Ion Implantation of Ge into 4H-SiC
Th. Kups, P. Weih, M. Voelskow, W. Skorupa, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 851 - 854

Micromachining of Novel SiC on Si Structures for Device and Sensor Applications
Ch. Foerster, V. Cimalla, M. Stubenrauch, C. Rockstuhl, K. Brueckner, M. Hein, J. Pezoldt, O. Ambacher
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 1111 - 1114

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC
J. Pezoldt, Th. Kups, P. Weih, Th. Stauden, O. Ambacher
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 1559 - 1562

Self organization and properties of Black Silicon
M. Fischer, M. Stubenrauch, Th. Kups, H. Romanus, F.M. Morales, G. Ecke, M. Hoffmann, C. Knedlik, O. Ambacher, J. Pezoldt
p. 4-2-5-1 - 4-2-5-9, In: 51. Internationales Wissenschaftliches Kolloquiums, Technische Universität Ilmenau, 11. - 15.09.2006, 2006, DVD.

Simulation of quality of SiC/Si interface during MBE deposition of C on Si

D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, J. Pezoldt, Yu.V. Trushin
p. 5-0-13-1 - 5-0-13-9, In:51. Internationales Wissenschaftliches Kolloquiums, Technische Universität Ilmenau, 11. - 15.09.2006, 2006, DVD.

Carbon surface diffusion and SiC nanocluster self-ordering
J. Pezoldt, Yu.V. Trushin, V.S. Kharlamov, A.A. Schmidt, V. Cimalla, and O. Ambacher
E-MRS Spring Meeting 2006, May 29- June 3, 2006, Nizza

Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
J. Pezoldt, Ch. Zgheib, V. Lebedev, P. Masri, O. Ambacher
E-MRS Spring Meeting 2006, May 29- June 3, 2006, Nizza

Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres
K. Tonisch, F. Weise, M. Stubenrauch, V. Cimalla, G. Ecke, F. Will, H. Romanus, S. Mrotzek, H. Hofmeister, M. Hoffmann, D. Hülsenberg, and O. Ambacher
E-MRS Spring Meeting 2006, May 29- June 3, 2006, Nizza

Nanowire-based electromechanical biomimetic sensor
K. Tonisch, V. Cimalla, F. Will, F. Weise, M. Stubenrauch, A. Albrecht, M. Hoffmann, and O. Ambacher
E-MRS Spring Meeting 2006, May 29- June 3, 2006, Nizza

Tuning of electrical and structural properties of In2O3 films grown by MOCVD
Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, M. Niebelschütz, and O. Ambacher
E-MRS Spring Meeting 2006, May 29- June 3, 2006, Nizza

Analysis of nanocrystalline films on rough substrates
V. Cimalla, T. Machleidt, L. Spieß, M. Gubisch, I. Hotovy, H. Romanus, and O. Ambacher
E-MRS Spring Meeting 2006, May 29- June 3, 2006, Nizza

InN as THz emitter exited at 1060nm and 800nm
B. Pradarutti, G. Matthäus, C. Brückner, St. Riehemann, G. Noti, St. Nolte, V. Cimalla, V. Lebedev, O. Ambacher, and A. Tünnermann
Proc. SPIE 6194 (2006) 619401

SiC-based MOSFETS for harsh environment emissions sensors
P. Sandvik, M. Ali, V. Tilak, K. Matocha, Th. Stauden, J. Tucker, J. Deluca, and O. Ambacher
Mater. Sci. Forum 527-529 (2006) 1457 - 1460

2005

A Novel Class of Sensors for System Integrative Concepts in Biotechnological Applications
A. Schober, G. Kittler, C. Buchheim, A. Majdeddin, V. Cimalla, M. Fischer, V. Yanev, M. Himmerlich, S. Krischok, J.A. Schaefer, H. Romanus, T. Sändig, J. Burgold, F. Weise, H. Wurmus, K.H. Drüe, M. Hintz, H. Thust, M. Gebinoga, M. Kittler, A. Spitznas, E. Gottwald, K-F. Weibezahn, D. Wegener, A. Schwienhorst, and O. Ambacher
Techn. Proc. 2005 NSTI Nanotechnology Conference and Trade Show, Volume 1, (2005) 489-492.

Molecular dynamics study of diffusion barriers of Si and C adatoms on Si surfaces
V.S. Kharlamov, M.N. Lubov, J. Pezoldt, Yu.V Trushin., E.E. Zhurkin
Proc.of SPIE, Eighth International Workshop on Nondestructive Testing andComputer Simulations in Science and Engineering (HI-TECH 02), 5831(2005) 51-55.

Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si
M. Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J. Perez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, M. Grundmann
Wissenschaftlich-Technische Berichte des Forschungszentrums Rossendorf, FZR-433 (2005) 74 - 82

Stress design in 3C-SiC/Si heteroepitaxial systems
J. Pezoldt, Ch. Zgheib, Ch. Förster, F.M. Morales, G. Cherkachinin, Ch. Wang, A. Leycuras, G. Ferro, Y. Monteil, I. Cimalla, O. Ambacher, P. Masri
Wissenschaftlich-Technische Berichte des Forschungszentrums Rossendorf, FZR-433 (2005) 20 - 26

Fabrication of 3C-SiC/Si MEMS and NEMS for sensor applications
Ch. Förster, V. Cimalla, E. Aperathitis, K. Brückner, R. Stephan, M. Hein, J. Pezoldt, O. Ambacher
Wissenschaftlich-Technische Berichte des Forschungszentrums Rossendorf, FZR-433 (2005) 44 - 49

Beta to alpha transition and defects on SiC on Si grown by CVD
F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
In: Microscopy of Semiconducting Materials; Proceedings of the 14th Conference, April 11th - 14th, Oxford, 2005, Springer Proceedings in Physics Vol. 107, Eds. Cullins A.G., Hutchison J.L., Springer, Berlin 2005, p.131-134

Strain relaxation and void reduction in SiC on Si by Ge predeposition
F.M. Morales, P.Weih, Ch. Wang, Th. Stauden, O. Ambacher , J. Pezoldt
In: Microscopy of Semiconducting Materials; Proceedings of the 14th Conference, April 11th - 14th, Oxford, 2005, Springer Proceedings in Physics Vol. 107, Eds. Cullins A.G., Hutchison J.L., Springer, Berlin 2005, p.135-138 

New route of nanowire integration in microfabrication processes for sensor applications
M. Elbahari, S. Jebril, S.K. Raudra, D. Chenger, V. Cimalla, O. Ambacher, D. Paretkar, S. Wille, R. Adelung
Nanofair 2005, New Ideas for Industry, 4th International Nanotechnology Symposium, November 25-30, Dresden, VDI-Berichte 1920, 17-20

Fermi Level Analysis of Wide Band Gap Semiconductor Optoelectronic Device Structures by Auger Peak Position Measurements
G. Ecke, R. Kosiba, U. Rossow, V. Cimalla, J. Liday, J. Pezoldt, V. Lebedv, O. Ambacher
11th ECASIA 2005, Sept. 25-30, Vienna, Austria, oral presentation, Abstr. Proc. p. 234

Effects of solvent and annealing on the improved performance of solar cells based on poly(3-hexylthiophene): fullerene
M. Al-Ibrahim, O. Ambacher, S. Sensfuss, U. Zhokhavets, T. Erb, G. Gobsch
International Conference on Organic Electronics ICOE The Conference Centre High Tech Campus, Eidhoven/ The Netherlands (21.06.-23.06. 2005)

Polymersolarzellen- Aktueller Stand und Perspektiven
M. Al-Ibrahim und O. Ambacher
PV-Uni-Netz, TU Ilmenau (16.-17.02.2005)

"Anomalous" pseudodielectric function of GaN: experiment, model and application to study the surface properties
S. Shokhovets, G. Gobsch, V. Lebedev, and O. Ambacher
E-MRSSpringMeeting,Symposium P: Current trends in optical and X-raymetrology ofadvancedmaterials for nanoscale devices, May 31-June 3,2005,Strasbourg, france,
Scientific Programme, p. P-11/11: Vortrag

Conduction band parameters of ZnO
S. Shokhovets, G. Gobsch, and O. Ambacher
E-MRS Spring Meeting, Symposium G: ZnO and related materials, May 31- June 3, 2005, Strasbourg, France,
Scientific Programme, p. G-15/19: Poster

2004

Influence of metal thickness to sensitivity of Pt/GaN Schottky diodes for gas sensing applications
V. Tilak, M. Ali, V. Cimalla, V. Manivannan, P. Sandvik, J. Fedison, O. Ambacher, and D. Merfeld
GaN and Related Alloys - 2003 Symposium, 2004, 593-597

Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy

H. Lu, W.J. Schaff, L.F. Eastman, V. Cimalla, J, Pezoldt, O. Ambacher, J. Wu, and W. Walukiewicz
MRS Symp. Proc. 798 (2004) Y12.6.

Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets

C. Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok, V. Yanev, G. Ecke, J.A. Schaefer, and O. Ambacher
Proc. IEEE Sensors 2004, October, 24-27, Vienna, Austria, p.1007-1010.

SiC/Si and AlN/Si heterostructures for microelectromechanical RF sensors
C. Foerster, V. Cimalla, V. Lebedev, D. Cengher, O. Ambacher, K. Brueckner, R. Stephan, and M.A. Hein
2004 International Semiconductor Conference. CAS 2004 Proceedings, 2004, 2, 371-374

Micro-electromechanical RF resonators from SiC/Si heterostructures
K. Brueckner, R. Stephan, M.A. Hein, Ch. Foerster, V. Cimalla, and O. Ambacher
MEMSWAVE 2004, Uppsala, Sweden, 30 June - 2 July 2004

SiC/Si and AlN/Si heterostructures for microelectromechanical RF sensors
Ch. Förster, V. Cimalla, V. Lebedev, D. Chenger, O. Ambacher, K. Brueckner, R. Stephan, M.A. Hein
International Semiconductor Conference 27th Edition Oct. 4-6, 2004, Sinaia, Romania, 371-374.

Infrarotellipsometrie - ein Verfahren für die Materialcharakterisierung
J. Pezoldt, Ch. Wang
In:Thüringer Werkstofftag 2004 – Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd.18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik,Verlag Dr. Köster, Berlin2004, S. 159 -166

Strukturselektion in multivariablen Kristallen
J. Pezoldt, A.A. Kalnin
In:Thüringer Werkstofftag2004 - Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd.18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik,Verlag Dr. Köster, Berlin 2004, S. 167 - 176

Ionenstrahlätzen von Siliziumkarbid
Ch. Förster, V. Cimalla, J. Pezoldt, G. Ecke, O. Ambacher
In:Thüringer Werkstofftag2004 - Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd.18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik,Verlag Dr. Köster, Berlin2004, S. 185 - 190

Determination of dopands and polytypes of SiC by Auger Electron Spectroscopy
G. Ecke, R. Kosiba, P. Weih, J. Pezoldt
13. Arbeitstagung „Angewandte Oberflächenanalytik“ AOFA 13, Dresden, 14. – 17. September 2004

Nachweis der Oberflächenleitfähigkeit von epitaktischen InN Schichten
G. Ecke, V. Cimalla, M. Niebelschütz, O. Ambacher
13. Arbeitstagung „Angewandte Oberflächenanalytik“ AOFA 13, Dresden, 14. – 17. September 2004

Surface Conductivity of Epitaxial InN
V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn,H. Lu, and W.J. Schaff
International Workshop on Nitride Semiconductors
July 19 - 23, 2004, Sheraton Station Square Pittsburgh, Pennsylvania, USA

Anforderungen an Werkstoffe und Technologien zur Herstellung von effizienten langzeitstabilen Polymersolarzellen
M. Al-Ibrahim, H.-K. Roth, S. Sensfuss, C. Knedlik, O. Ambacher
Thüringer Werkstofftag 2004, TU Ilmenau, (21. April 2004).

Comparison of normal and inverse poly(3-alkylthiophene)/fullerene solar cell architectures
M. Al-Ibrahim, S. Sensfuss, G. Ecke, O. Ambacher
40th International Symposium on macromolecules (Macro 2004), Paris, (4.-9. July 2004).

Polymer solar cells with normal and inverse architectures
M. Al-Ibrahim, H.-K- Roth, S. Sensfuss, J. Uziel, G. Ecke, O. Ambacher
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany (28.-30. Sept. 2004)

Large area polymer solar cells on flexible substrates
S. Sensfuss, M. Al-Ibrahim, H. Schache, A. Konkin, H.-K. Roth, D.A.M. Egbe, F. Apsel, U. Miethe, U. Herzau-Gerhard
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany (28.-30. Sept. 2004)

Effect of morphology of polymer fullerene composite films on their optical and electronic properties
G. Gobsch, U. Zhokhavets, T. Erb, H. Hoppe, N.S. Sariciftci, M. Al-Ibrahim
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany, (28.-30. Sept. 2004)

Investigation of contacts of polymer solar cells by Auger sputter depth profiling
G. Ecke, M. Al-Ibrahim, S. Sensfuss, O. Ambacher
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany, (28.-30. Sept. 2004)

X-Ray diffraction and spectroscopic ellipsometry to analyze the morphology of active layers of organic solar cells
T. Erb, U. Zhokhavets, G. Gobsch, M. Al-Ibrahim, P. Schilinsky, Ch. Waldauf, Ch. Brabec
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany, (28.-30. Sept. 2004)

Determination of polaron lifetime and mobility in a polymer/fullerene solar cell by means of photoinduced absorption spectroscopy
U. Zhokhavets, C. Arndt, M. MOhr, G. Gobsch, M. Al-Ibrahim, S. Sensfuss
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany, (28.-30. Sept. 2004)

Sputter depth profiling of GaN/InAlGan multi quantum well structures
G. Ecke, R. Kosiba, G. Kittler, K. Pelekanos, O. Ambacher
DPG Regensburg/Germany (8-12 April 2004)

Pt/GaN Schottky Diodes for Hydrogen Gas Sensors
M. Ali, V. Cimalla, V. Tilak, P. Sandvik, D. Merfeld, O. Ambacher
DPG Regensburg/Germany (8-12 April 2004)

Pt/GaN based Schottky diodes for gas sensing applications
M. Ali, V. Cimalla, V. Tilak, P. Sandvik, D. Merfeld, O. Ambacher
Proc. IEEE Sensors 2004, October, 24-27, Vienna, Austria, p.959-962.

2003

Tungsten Carbide layers for Nanomeasuring Systems
L. Spiess; M. Gubisch; H. Romanus; M. Breiter; C. Müller; V. Cimalla; G. Ecke, Y. Liu, C. Knedlik
Proc. MICRO.tec 2003, VDE Verlag, Berlin, Offenbach, 2003, 165-170

Pd-based Ohmic contacts to LPE 4H-SiC with improved thermal stability

L. Kassamakova-Kolaklieva, R. Kakanakov, V. Cimalla, N. Hristeva, G. Lepoeva, N. Kuznetsov, and K. Zekentes
Mater. Sci. Forum 433-436 (2003) 713-716.

High resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates
P. Weih, V. Cimalla, Ch. Förster, J. Pezoldt, Th. Stauden, L. Spieß, H. Romanus, M. Hermann, M. Eickhoff, P. Masri, O. Ambacher
Mater. Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 233-236

Comparative TEM investigations of MBE and RTCVD conversion of Si into SiC
F. M. Morales, S. I. Molina, D. Araujo, V. Cimalla, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 285-288

Modelling the formation of nano-sized SiC on Si
K. L. Safonov, A. A. Schmidt, Yu V. Trushin, D. V. Kulikov, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 591-594

Structural study of GaN layers grown on carbonized Si(111) substrates
F.M. Morales, A. Ponce, S. I. Molina, D. Saraujo, R. Garcia, J. Ristic, M. A. Sanchez-Garcia, E. Calleja, V. Cimalla, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 1003-1006

Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process
K. L. Safonov, D. V. Kulikov, Yu V. Trushin, J. Pezoldt
Proc. of SPIE, Sixth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering
(HI-TECH 02), vol. 5127 (2003) 128-131

Electroreflectance and Photoreflectance Studies of Electric Fields in Pt/GaN Schottky Diodes and AlGaN/GaN Heterostructures
S.Shokhovets,G. Goldhahn, G. Gobsch, O. Ambacher, I. P. Smorchkova, J.S. Speck, U.Mishra, A. Link, M. Herrmann, and M. Eickhoff,
Mat. Res. Soc. Symp. Proc., Fall Meeting, Boston (2003) submitted.

Dielectric Function of "Narrow" Band Gap InN
G. Goldhahn, S. Shokhovets, V. Cimalla, L. Spiess, G. Ecke, O. Ambacher, J. Furthmüller, F.Bechstedt, H. Lu, and W.J. Schaff,
Mat. Res. Soc. Symp. Proc., Fall Meeting, Boston (2003) submitted.

Photo-ElectronEmissionMicroscopy (PEEM) observation of inversion domain boundariesofGaN-based lateral polarity heterostructures
W.-C. Yang, B. J. Rodriguez, R .J. Nemanich, and O. Ambacher,
Mat. Res. Soc. Symp. Proc., Fall Meeting, Boston (2003).

2002

Progress in nitride–based microwave HEMTs
L. F. Eastman, V. Tilak, J. Smart, O. Ambacher et al.
Inst. Phys. Conf. Ser. 170 (2002).

High Frequency SAW Devices on AlGaN: Fabrication, Characterization and Integration with Optoelectronics
T. Palacios, F. Calle, J. Grajal, E. Monroy, M. Eickhoff, O. Ambacher, and F. Omnes,
IEEE International Ultrasonics Symposium, Proc. 2002.

Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental Investigations
F. Scharmann, J. Pezoldt,
Proc.ofSPIE,Fourth International Workshop on Nondestructive TestingandComputerSimulations in Science and Engineering (HI-TECH 01),4627(2002) 160-164

Nucleation of SiC on Si and their relationship to nano-dot formation: II Theoretical investigation
K. L. Safonov, D. V. Kulikov, Yu V. Trushin, J. Pezoldt,
Proc.ofSPIE,Fifth International Workshop on Nondestructive TestingandComputerSimulations in Science and Engineering (HI-TECH 01),4637(2002) 165-169

Electrical characterization of SiC/Si heterostructures with modified interfaces
Ch. Förster, P. Masri and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 355-358

Physics of Heteroepitaxy and Heterophases
P. Masri, J. Pezoldt, M. Sumiya and M. Averous,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 379-382

A Tool for Structural Investigations of Thin Polytypic SiC Layers
F. Scharmann and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 463-466

In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)
P. Weih, Th. Stauden and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 725-728

Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides
P. Masri, J. Pezoldt, M. Sumiya and M. Averous,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 733-736

Silicon Carbide Buffer Layers for Nitride Growth on Si
P. Masri, Z. Herro, Th. Stauden, J. Pezoldt and M. Sumiya,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 1485-1488

2001

GaN-based Heterostructures for Sensor Applications
M. Stutzmann, G. Steinhoff, M. Eickhoff, O. Ambacher, C. E. Nebel, J. Schalwig, R. Neuberger, and G. Müller,
12thEuropeanConferenceon Diamond, Diamond like Materials, CarbonNanotubes,Nitrides andSilicon Carbide, Budapest, Ungary (2001).

Novel Sensor Applications based on group-III-nitrides
M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, G. Müller, and M. Stutzmann,
Mat. Res. Soc. Symp. Proc. Fall Meeting, Boston (2001).

Progress in Nitride-Based Microwave HEMT´s
L. F.Eastman,V.Tilak, J. Smart, B. Green, A. Vertiatchikh, N. Weimann, O.Ambacher,E.Chumbes, H. Kim, T. Prunty, J. H. Hwang, W. J. Schaff, B.K. Ridley,J.R. Shealy, and V. Kaper,
Proc. 28th International Symposium on Compound Semiconductors (ISCS 2001), Tokyo, Japan, October 10, 2001.

Sub-micron technology in group-III nitrides: Applications to electronic devices
T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, F. Omnes, Z. Bougrioua, and E. Munoz,
Proc. 11th European Heterostructure Technology Workshop, Padova, 28-30 October 2001.

Nanotechnology for SAW devices on AlN epilayers
T. Palacios, F. Calle, E. Monroy, J. Grajal, M. Eickhoff, O. Ambacher, and C. Prieto,
submitted for Proc. Eur. Mat. Res. Soc. Symp. Proc . H (2001) PI.17.

Group III-Nitride based gas sensors for combustion monitoring
J. Schalwig, G. Müller, O. Ambacher, and M. Stutzmann,
Eur. Mat. Res. Soc. Symp. Proc . H (2001).

Ionization Energy and Electron Affinity of Clean and Oxidized AlxGa1-xN(0001) Surfaces
H. Nienhaus, M. Schneider, S. P. Grabowski, W. Mönch, R. Dimitrov, O. Ambacher, and M. Stutzmann,
Mat. Res. Soc. Symp. Proc. 680 (2001) E4.5.1.

Carbonization induced change of polarity for MBE grown 3C-SiC/Si(111)
J. Pezoldt, B. Schröter, V. Cimalla, Th. Stauden, R. Goldhahn, and L. Spieß,
Mater. Sci. Forum, Silicon Carbide and Related Materials (ECSCRM 2000), 353 (2001) 179.

The influnece of Ge on the SiC nucleation on (111)Si surfaces
J. Pezoldt, T. Wöhner, Th. Stauden, J. A. Schaefer, and P. Masri,
Mater. Sci. Forum, Silicon Carbide and Related Materials (ECSCRM 2000), 353 (2001) 183.

In situ RHEED studies on the influence of Ge on the early stages of SiC on Si(111) and (100) surfaces
V. Cimalla, K. Zekentes, K. Tsagaraki, Th. Stauden, F. Scharmann, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials (ECSCRM 2000), 353 (2001) 187.

Evaluation of carbon surface diffusion on silicon by using surface phase transition
F. Scharmann, P. Maslarski, D. Lehmkuhl, Th. Stauden, and J. Pezoldt,
Proc.ofSPIE,Fourth International Workshop on Nondestructive TestingandComputerSimulations in Science and Engineering (HI-TECH 00),4348(2001) 173.

Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, and J. Pezoldt,
Proc.ofSPIE,Fourth International Workshop on Nondestructive TestingandComputerimulations in Science and Engineering (HI-TECH 00), 4348(2001)257.

Characterization of SiC grown on Ge modified silicon substrates
J. Pezoldt, Th. Stauden, Ch. Förster, and P. Masri,
Mater. Res. Soc. Symp. Proc., 640 (2001) H5.7.1.

Structural and elasticity-based properties of SiC-based interfaces: their relevance to the heteroepitaxy of III-V nitrides
Averous M.,P. Masri, M. Rouhani Laridjani, Th. Stauden, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc., 639 (2001) G3.49.1:

2000

Polarization induced 2D hole gas in GaN/AlGaN heterostructures
S. Hackenbuchner, J. A. Majewski, G. Zandler, O. Ambacher, and P. Vogl,
Mat. Res. Soc. Symp. Proc. 622 (2000) T5.10.1.

Complex DX-behavior of Si in AlGaN alloys
S. T. B. Goennenwein, R. Zeisel, U. Karrer, M. W. Bayerl, O. Ambacher, M. S. Brandt, and M. Stutzmann,
Proceed. 25th Int. Conf. Phys. Semiconductors 87 Part II (2000) 1597.

Laser-Induced Liftoff and Laser Patterning of Large Free-Standing GaN Substrates
O. Ambacher, M. K. Kelly, C. R. Miskys, L. Höppel, C. Nebel, and M. Stutzmann,
Mat. Res. Soc. Symp. 617 (2000) J1.7.1.

Lateral polarity heterostructures by overgrowth of patterned AlxGa1-xN nucleation layers
R. Dimitrov, V. Tilak, M. Murphy, W. Schaff, L. F. Eastman, O. Ambacher, C. Miskys, A. Lima, A. Link, and M. Stutzmann,
Mat. Res. Soc. Symp. Proc. 622 (2000) T4.6.

2DEGs and 2DHGs induced by spontaneous and piezoelectric polarization in AlGaN/GaN heterostructures
O. Ambacher, M. Stutzmann, R. Dimitrov, B. Foutz, J. Smart, J. R. Shealy, M. Murphy, W. Schaff, and L. F. Eastman,
Mat. Res. Soc. Symp. Proc. 622 (2000) T5.10.

High performance polarization induced AlGaN/GaN HEMT´s
O. Ambacher, K. Chu, B. Green, V. Tilak, N. Weimann, J. Smart,
J. R. Shealy, and L. F. Eastman,
26thInternationalSymposiumon Compound Semiconductors, Berlin,Germany, 22-26. August,1999, Inst.Phys. Conf. Ser. 166 (2000)483.

Two-dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped AlGaN/GaN HEMTs
O. Ambacher, R. Dimitrov, M. Stutzmann. B. Foutz, M. Murphy, J. Smart, J. R. Shealy, N. G. Weimann, and L. F. Eastman,
26thInternationalSymposium on Compound Semiconductors, Berlin,Germany, 22-26. August,1999, Inst. Phys. Conf. Ser. 166 (2000)493.

Photothermal measurements of Al+ and Al+/N+ implanted 6H-SiC, Proc. of SPIE
J. Pezoldt, G. Teichert, D. Panknin, and M. Voelskov,
Third International Workshop on Nondestructive Testing and
Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 276.

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc.ofSPIE,Third International Workshop on Nondestructive TestingandComputerSimulations in Science and Engineering (HI-TECH 99) 4064(2000)281.

Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth
P. Masri, M. Rouhani Lourdjani, T. Wöhner, J. Pezoldt, and M. Averous,
Comp. Mater. Sci., 17 (2000) 544.

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc. of SPIE, Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 281.

Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation
P. V. Rybin, D. V. Kulikov, V. Trushin, J. Pezoldt, and R. A. Yankov,
Proc. of SPIE, Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 301.

Optimization of heterointerfaces in epitaxial growth, The European Materials Conference CD-ROM Proceedings
P. Masri, M. Rouhani Lourdjani, T. Wöhner, J. Pezoldt, and M. Averous,
EMRS Spring Meeting, Symposium C: Progress in Computational Mater. Sci., File CIIP16.PDF.

1999

Auger depth profiling of thin SiClayers-practical aspects for a better understanding ofatomicmixing,preferential sputtering and quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, and J. Pezoldt,
ThirdInternationalworkshopon: New Approaches to High-Tech: NondestructiveTesting andComputerSimulations in Science and Engeneering. 7.-11.June 1999, St.Petersburg;Russia, Conf. Proc. SPAS 3.

Theoretical and experimental studies of (SiC)1-x(AlN)x layer structures formed by N+ and Al+ co-implantation in 6H-SiC
D. V. Kulikov, J. Pezoldt, P. V. Rybin, W. Skorupa, V. Trushin,
and R. A. Yankov,
Proc.of SPIE, Nondestructive Testing and Computersimulations in Materials Science and Engineering (HI-TECH 98) 3687 (1999) 254.

Thermal wave analysis: A tool for non-invasive testing in ion beam synthesis of wide band gap materials
G. Teichert, L. Schleicher, Ch. Knedlik, M. Voelskow, W. Skorupa, R. A. Yankov, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc., 540 (1999) 103.

In situ spectroscopic ellipsometry studies of the interaction process of ethene with Si surfaces during SiC formation
T. Wöhner, Th. Stauden, V. Cimalla, G. Eichhorn, J. A. Schaefer, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc., 569 (1999) 95.

On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfacesP. Masri, N. Moreaud, M. Averous, Th. Stauden, T. Wöhner, and J. Pezoldt,
Mater.Res.Soc. Symp. Proc., Wide-Bandgap Semiconductors forHigh-Power,High-Frequency and High-Temperature Applications- 1999, 572(1999) 213.

1998

Photoquenching of persistent photoconductivity in n-type GaN
M. T. Hirsch, O. Seifert, O. Kirfel, J. Parisi, J. A. Wolk, W. Walukiewicz, E. E. Haller, O. Ambacher, and M. Stutzmann,
Mat. Res. Soc. Symp. Proc. 482 (1998) 531.

Laser-processing for patterned and free-standing nitride films
M. K. Kelly, O. Ambacher, R. Dimitrov, H. Angerer, R. Handschuh, and M. Stutzmann,
Mat. Res. Soc. Symp. Proc. 482 (1998) 973.

Thermopower investigation of p-type doping in GaN
M. S. Brandt, P. Herbst, R. Dimitrov, O. Ambacher, M. Stutzmann,
Mat. Res. Soc. Symp. Proc. 482 (1998) 573.

Ionenstrahl-induzierte Oberflächenrauhigkeit auf Metallisierungsschichten und deren Einfluss auf AES Tiefenprofile
Th. Wöhner, G. Ecke, and H. Rößler,
43. IWK Ilmenau, Sept. 1998, Conf.-Proc.

Depth Profiles of Multilayer Structures: Measured by AES and Simulated
J. Liday, G. Ecke, R. Kosiba, P. Vogrincic, and J. Breza,
43. IWK Ilmenau, Sept. 1998, Conf.-Proc.

High Sensitive Thermal Sensors in heat Spreading Diamond Films for Industrial Applications
J. Bonhaus, W. Borchert, F. Fontage, Th. Harlander, G. Ecke, and W. Fahrner,
IEEE Conference, Peteroria 1998.

Computer simulation and RBS/C studies of high dose N+ and Al+ co-implantation in 6H-SiC
V. S. Kharlamov, D. V. Kulikov, Yu. V. Truschin, D. N. Tsigankov,
R. A. Yankov, M. Voelskow, W. Skorupa, and J. Pezoldt,
Proc.of SPIE, Nondestructive Testing and Computersimulations in Materials Science and Engineering (HI-TECH 97), 3345 (1998) 260.

Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
J. Pezoldt, R. A. Yankov, M. Voelskow, G. Brauer, W. Anwand, V. Heera, W. Skorupa, P. G. Coleman,
Inst. Phys. Conf. Ser., Defect Recognition and Image Processing in Semiconductors (DRIP VII), 160 (1998) 335.

Simulation von Strömungsprozessen in einem RTP-Reaktor
A. Schenk, Yu. P. Rainova, and J. Pezoldt,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 435.

Ein Wachstumsmodell für die Karbonisierung von Siliziumsubstraten
W. Attenberger, J. K. N. Lindener, B. Stritzker, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, and J. Pezoldt,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 476.

Werkstoffanalytische Probleme bei der Charakterisierung von Siliziumkarbid für mikrotechnik Anwendungen
L. Spieß, H. Romanus, G. Teichert, and J. Pezoldt,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 546.

Thermowellenanalyse an implantiertem SiC
G. Teichert, L. Schleicher, L. Spieß, R. A. Yankov, C. Knedlik, and J. Pezoldt,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 558.

Polytypanalyse von Epitaxieschichten mit RHEED
F. Scharmann, G. Teichert, G. Eichhorn, and J. Pezoldt,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 571.

Kohlenstoffinduzierte Rekonstruktionen auf Si-Oberflächen
F. Scharmann, J. Pezoldt, and V. Cimalla, Th. Stauden, and G. Eichhorn,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 648.

Der Einfluss der Aufheizgeschwindigkeit auf die Keimbildung von SiC auf Silizium
V. Cimalla, G. Eichhorn, V. Nakov, and J. Pezoldt,
43.InternationalesWissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, 2 (1998) 659.

On the entrance effects and the influence of buoyancy forces on the fluid flow in RTP reactors
Yu. P. Rainova, K. I. Antonenko, J. Pezoldt, A. Schenk, G. Eichhorn,
Mater. Res. Symp. Proc., 525 (1998) 39.