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Bernd Hähnlein: Publikationen

Infrared reflectance study of the graphene/semi-insulating 6H-SiC(0001) heterostructure
M. Auge, B. Hähnlein, J. Pezoldt
Mater. Sci. Forum 924 (2018) 314-317.

MOCVD compatible atomic layer deposition process of Al2O3 on SiC and graphene/SiC heterostructures
M. Eckstein, C. Koppka, S. Thiele, Y. Mi, R. Xu, Y. Lei, B. Hähnlein, F. Schwierz, J. Pezoldt
Mater. Sci. Forum 924 (2018) 506-510.

Radiative pumping and propagation of plexcitons in diffractive plasmonic crystals
Y. Zakharko, M. Rother, A. Graf, B. Hähnlein, J. Pezoldt, J. Zaumseil
Nano Lett. 18 (2018) 4927-4933.

Transport properties of graphene films grown by thermodestruction of SiC(0001) surface in argon atmosphere
S.P. Lebedev, I.A. Eliseyev, V.Yu. Davydov, A.N. Smirnov, V.S. Levitskii, M.G. Mynbaeva, M.M. Kulagina, B. Hähnlein, J. Pezoldt, A.A. Lebedev
Tech. Phys. Lett. 43 (2017) 849-852.


High temperature grown graphene on SiC studied by Raman and FTIR spectroscopy

M. Auge, B. Hähnlein, M. Eckstein, G. Woltersdorf, J. Pezoldt
Mater. Sci. Forum 897 (2017) 727-730.

Size effect of the silicon carbide Young’s modulus

B. Hähnlein, J. Kovac Jr., J. Pezoldt
Phys. Status Solidi A214 (2017) 1600390-1 - 1600390-9.


Multispectral electroluminescence enhancement of single-walled carbon nanotubes coupled to periodic nanodisk arrays
Y. Zakharko, M. Held, A. Graf, T. Rödleimer, R. Eckstein, G. Hernandez-Sos, B. Hähnlein, J. Pezoldt, J. Zaumseil
Optics Express 25 (2017) 18092-18106.

Graphene nanoribbons for electronic devices

Z. Geng, B. Hähnlein, R. Granzner, M. Auge, A.A. Lebedev, V.Y. Davydov, M. Kittler, J. Pezoldt, F. Schwierz
Ann. Physik (Berlin) 529 (2017) 1700033-1 – 1700033-15.


Nanostructuring of Graphene on Semi-Insulating SiC
B. Hähnlein, M. Breiter, Th. Stauden, J. Pezoldt


Materials Science Forum, Vol. 897, pp. 735-738, 2017 DOI: 10.4028/www.scientific.net/MSF.897.735

Surface lattice resonances for enhanced and directional electroluminescence at high current densities
Y. Zakharko, M. Held, A. Graf, T. Rödlmeier, R. Eckstein, G. Hernandez-Sosa, B. Hähnlein, J. Pezoldt, J. Zaumseil
ACS Photonics 3 (2016) 2225-2230

Amplification in Graphene Nanoribbon Junctions
J. Pezoldt, B. Hähnlein, H.O. Jacobs, F. Schwierz,
Materials Science Forum 858 
(2016) 1141-1144. Trans Tech Publications

Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning microscope bending test
R. Grieseler, F. Theska, T. Stürzel, B. Hähnlein, M. Stubenrauch, M. Hopfeld, T. Kups, J. Pezoldt, P. Schaaf
Thin Solid Films 604 (2016) 85-89


Broadband tunable, polarization-selective and directional emission of (6,5) carbon nanotubes coupled to plasmonic crystals
Y. Zakharko, A. Graf, S.P. Schießl, B. Hähnlein, J. Pezoldt, M.C. Gather, J. Zaumseil
Nano Lett. 16 (2016) 3278-3284

Amplification in Graphene Nanoribbon Junctions
J. Pezoldt, B. Hähnlein, H.O. Jacobs, F. Schwierz
Mat. Sci. Forum 858 (2016) 1141-1144. Trans Tech Publications 

Planar nanowire transistors from two-dimensional materials
B. Hähnlein,  M.A. Alsioufy,· M. Lootze, H.O. Jacobs, F. Schwierz, J. Pezoldt
Materials Science in Semiconductor Processing 07/2015 IN PRESS

Mechanical properties and residual stress of thin 3C-SiC(100) films determined using MEMS structures

B. Hähnlein, M. Stubenrauch, J. Pezoldt,
Mater. Sci Forum, Silicon Carbide and Related Materials 2014 (ECSCRM2014), 821-823 (2015) 281-284.

Size effect of Young's modulus in AlN thin layers
B. Hähnlein, P. Schaaf, J. Pezoldt
Journal of Applied Physics 116 (12), 124306 (2014)

Mechanical Properties and Residual Stress of Thin 3C-SiC (111) Films Determined Using MEMS Structures
B. Hähnlein, M. Stubenrauch, S. Michael, J. Pezoldt
Materials Science Forum 778 (2014) 444-448

Nanostructured plasma etched, magnetron sputtered nanolaminar Cr2AlC MAX phase thin films
R. Grieseler, B. Hähnlein, M. Stubenrauch, T. Kups, M. Wilke, M. Hopfeld, J. Pezoldt, P. Schaaf
Applied Surface Science 292 (2014) 997-1001

AlGaN based MEMS structures
B. Hähnlein, K. Tonisch, G. Ecke, R. Grieseler, S. Michael, P. Schaaf, J. Pezoldt
physica status solidi (c) 11 (2), 239-243 (2014)

Electrical gating and rectification in graphene three-terminal junctions
B. Händel, B. Hähnlein, R. Göckeritz, F. Schwierz, J. Pezoldt
Applied Surface Science 29 (2014) 87-92

Properties of Graphene Side Gate Transistors
B. Hähnlein, B. Händel, F. Schwierz, J. Pezoldt
Materials Science Forum 01/2013; 740-742:1028-1031.

T- and Y-branched three-terminal junction graphene devices
J. Pezoldt, R. Göckeritz, B. Hähnlein, B. Händel, F. Schwierz
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 683-686.

Side-gate graphene field-effect transistors with high transconductance
B. Hähnlein, B. Händel, J. Pezoldt, H. Töpfer, R. Granzner, F. Schwierz 
Appl. Phys. Lett. 101 (2012) 093504-1 - 093504-1.