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INHALTE

Gernot Ecke: Publikationen

Structure and Formation of Trivalent Chromium Conversion Coatings Containing Cobalt and Zinc Plated Steel
S. Hesamedini, G. Ecke, and A. Bund
J. Electrochem. Soc. 165 (10) (2018) C657-669 Synthetic Metal

Improvement of P3HT–ICBA solar cell photovoltaic characteristics due to the incorporation of the maleic anhydride additive: P3HT morphology study of P3HT–ICBA and P3HT–ICBA–MA films by means of X-band LESR
A.Konkin, U. Ritter, P. Scharff, M. Schrödner, S. Sensfuss, A. Aganov, V. Klochkov, G. Ecke
Synthetic Metal

Structure and Formation of Trivalent Chromium Conversion Coatings Containing Cobalt and Zinc Plated Steel

Improvement of P3HT–ICBA solar cell photovoltaic characteristics due to the incorporation of the maleic anhydride additive: P3HT morphology study of P3HT–ICBA and P3HT–ICBA–MA films by means of X-band LESR
A. Konkin, U. Ritter, P. Scharff, M. Schrödner, S. Sensfuss, A. Aganov, V. Klochkov, G. Ecke
Synthetic Metals 197, 210-216 (2014)

Multifrequency X, W-band ESR study on photo-induced ion radical formation in solid films of mono-and di-fullerenes embedded in conjugated polymers
A. Konkin, U. Ritter, P. Scharff, G. Mamin, A. Aganov, S. Orlinskii, V. Krinichnyi, DAM Egbe, G. Ecke, H. Romanus
Synthetic Metals 197, 210-216 (2014)

Influence of Thermal Annealing on PCDTBT: PCBM Composition ProfilesO. Synooka, K.‐R. Eberhardt, C. R. Singh, F. Hermann, G. Ecke, B. Ecker, E. von Hauff, G. Gobsch, H. Hoppe
Advanced Energy Materials 4 (5) (2014)

AlGaN based MEMS structures
B. Hähnlein, K. Tonisch, G. Ecke, R. Grieseler, S. Michael, P. Schaaf, J. Pezoldt
physica status solidi (c) 11 (2), 239-243 (2014)

AlGaN solution growth on 3C-SiC(111)/Si(111) pseudosubstrates
K. Tonisch, R. Benzig, G. Ecke, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 103-106

Smooth ceramic titanium nitride contacts on AlNGaN/GaN-heterostructures
C. Maus, T. Stauden, G. Ecke, K. Tonisch and J. Pezoldt
Semicond. Sci. Technol. 27 (2012) 115007

ESR and LESR X-band study of morphology and charge carrier interaction in
blended P3HT–SWCNT and P3HT–PCBM–SWCNT solid thin films
A. Konkin, C.Bounioux, U. Ritter, P. Scharff, E.A. Katz, A. Aganov, G. Gobsch, H. Hoppe, G. Ecke, H.-K. Roth
Syntetic Metals 161(2011) 2241-2248

Contribution to the quantitative analysis of ternary alloys of group III- Nitrides by Auger Spectroscopy
J. Liday, G. Ecke, T. Baumann, P. Vogrincic, J. Breza
J. Electr. Engineering 61 (1) 2010, 62-64

Effect of annealing on theproperties of Indium-Tin-Oxynitride Films as ohmic contactsfor GaN-based optoelectronics devices
M. Himmerlich, M. Koufaki, G. Ecke, Ch. Mauder, V. Cimalla, J.A. Schäfer, A. Kondalis, N.T. Pelekanos, M. Modreanu, S. Krischok and E. Aperathitis
Appl. Mat. Int. 1(2009) 1451-1456

Isotropic etching of SiC

Th. Stauden, F. Niebelschütz, K. Tonisch, V. Cimalla, G. Ecke, Ch. Haupt, and J. Pezoldt
Materials Science Forum 600-603 (2009) 651-654

Investigation of NiO-based contacts on p-GaN
 
J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vincze, I. Vavra, A. Satka, G. Ecke, A. Bonanni, J. Breza, C. Simbrunner, B. Plochberger
 J. Mater Sci: Mater Electron 19 (2008) 855-862 DOI 10.1007/s 10854-007-9520-1

InN/In2Oheterostructures
Ch. Y. Wang, V. Cimalla, V. Lebedev, Th. Kups, G. Ecke, S. Hauguth, O. Ambacher, J.G. Lorenzo, F. M. Morales, and D. Gonzales
phys. stat. sol. (c) 5 (2008) 1627–1629
DOI: 10.1002/pssc.200778549


Ozone and UV assistend oxidation of InN surfaces
G. Ecke, Ch. Y. Wang, V. Cimalla, and O. Ambacher
phys. stat. sol. (c) 5 (2008) 1603–1605
DOI: 10.1002/pssc.200778519


Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process
J. Pezoldt, R. Nader, Ch. Zgheib, G. Ecke, R. Pieterwas, Th. Stauden, Th. Wöhner and P. Masri
Surf. Interface Anal. 40 (2008) 794-797
DOI: 10.1002/sia.2618


Investigation of NiOx-based contacts on p-GaN
J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vince, I. Vavra, A. Satka, G. Ecke, A. Bonanni, J. Breza, C. Simbrunner, B. Plochberger
J. Mater Sci: Mater Electron (2007) 10854

Analysis of nanostructures by means of Auger electron spectroscopy
G. Ecke, V. Cimalla, K. Tonisch, V. Lebedev, H. Romanus, O. Ambacher, and J. Liday
J. Electrical Eng. 58 (2007) 301-306

Ionenimplantierte Titanoberflächen für den Hartgewebeersatz
C. Blank, S. Krischok, R. Gutt, M. Engel, J. A. Schäfer, J. Schawohl, L. Spieß, Ch. Knedlik, G. Ecke, F. Schrempel, E. Hüger, G. Hildebrand, K. Liefeith
BIOmaterialien 8 (2007) 285-292

Surface composition and electronic properties of indium tin oxide and oxynitride films
M. Himmerlich, M. Koufaki, Ch. Mauder, G. Ecke, V. Cimalla, J. A. Schäfer, E. Aperathitis, S. Krischok
Surf. Sci. 601 (2007) 4082-4086

Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients

J. Liday, I. Hotovy, H. Sitter, K. Schmidegg, P. Vogrincic, A. Bonnani, J. Breza, G. Ecke, I. Vavra
Appl. Surf. Sci. 235 (2007) 3174-3180

Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres

K. Tonisch, F. Weise, M. Stubenrauch, V. Cimalla, G. Ecke, F. Will, H. Romanus, S. Mrotzek, H. Hofmeister, M. Hoffmann, D. Hülsenberg and O. Ambacher
Physica E 38 (2007) 40-43

Reduced surface electron accumulation at InN films by ozone induced oxidation

V. Cimalla, V. Lebedev, Ch. Y. Wang, M. Ali, G. Ecke, V. M. Polyakov, F. Schwierz, O. Ambacher, H. Lu, and W. J. Schaff
 Appl. Phys. Lett. 101 (2007) 152106

SiC-based FET for detection of NOand O2 using InSnOx as a gate material 
 
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik and O. Ambacher
 Sens. Actuat. B 122 (2007) 182-186

Reactively sputtered InxVyOz films for detection of NOx, D2, and O2

M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher
Sens. Actuators B 123 (2007) 779-783

Effect of surface oxidation on electron density and transport properties of InN thin films

V. Lebedev, V. Cimalla, Ch. Y. Wang, G. Ecke, S. Hauguth, M. Ali and O. Ambacher, V. M. Polyakov and F. Schwierz
J. Appl. Phys.101 (2007) 123705

Space charge limited electron transport in AlGaN photoconductors
V. Lebedev, G. Cherkashinin, G. Ecke, I. Cimalla, and O. Ambacher
J. Appl. Phys. 101 (2007) 033705

Fermi level analysis of group III nitride semiconductor device structures by Auger peak position measurements
G. Ecke, M. Niebelschütz, R. Kosiba, U. Rossow, V. Cimalla, J. Liday, P. Vogrincic, J. Pezoldt, V. Lebedev, and O. Ambacher
J. Electr. Engin. 57 (2006) 354-359

Low Energy Ion Modification of 3C-SiC Surfaces
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, and J. Pezoldt
Silicon Carbide and Related Materials 2005 (ICSCRM 2005), Mater. Sci. Forum 527-529, (2006) 685–688.

Origin of n-type conductivity in nominally undoped InN
V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
Mat. wiss. Werkst. techn. 37 (2006) 924

Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen
M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, O. Ambacher
Mat. wiss. Werkst. techn. 37 (2006) 937

Optical emission spectroscopy during fabrication of indium -tin-oxynitride films by RF-sputtering
M. Koufaki, M. Sifakis, E. Iliopoulos, N. Pelekanos, M. Modreanu, V. Cimalla, G. Ecke, E. Aperathitis
Appl. Surf. Sci. 253 (2006) 405-408

Work Function Analysis of GaN-based Lateral Polarity Structures by Auger Electron Energy Measurements

M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, and O. Ambacher
J. Appl. Phys. 100 (2006) 074909

Self organization and properties of Black Silicon
 
M. Fischer, M. Stubenrauch, Th. Kups, H. Romanus, F.M. Morales, G. Ecke, M. Hoffmann, C. Knedlik, O. Ambacher and J. Pezoldt
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 237

Origin of n-type conductivity in nominally undoped InN
 
V. Cimalla, V. Lebedev, F. M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, September 11 – 15, (2006) 303


Work Function Analysis of GaN-based Lateral Polarity 
Structures by Auger Electron Energy Measurements
M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 297

Composition Measurements of Group-III Nitride Ternary 
and Quaternary Compound Nanostructures by AES 
G. Ecke, T. Baumann, O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 253

SiC-based FET for NOx gas sensing applications using 
InVOx metal oxides as a gate material
M. Ali, G. Ecke, V. Cimalla, Th. Stauden, V. Tilak, P. Sandvik, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 245

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities 
J. Pezoldt, F.M. Morales, Ch. Zgheib, Ch. Förster, Th. Stauden, G. Ecke, Ch. Wang, P. Masri 
Surf. Interface Anal. 38 (2006) 444 - 447 

Low Energy Ion Modification of 3C-SiC Surfaces 
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, J. Pezoldt 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 685 - 688 

Tuning of Surface Properties of AlGaN/GaN Sensors for Nanodroplets and Picodroplets
C.Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok,V. Yanev, M. Himmerlich, G. Ecke, J. A. Schäfer, and O. Ambacher
IEEE Sensors Journal 6 (2006) 881-886 

Phase selective growth and properties of rhombohedral and cubic indium oxide
Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, G. Ecke, Th. Stauden, M. Ali, V. Lebedev, J. Pezoldt, and O. Ambacher
Appl. Phys. Lett. 89 (2006) 011904

Quantitative Auger electron spectroscopy of SiC
R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza, P. Vogrincic
Vacuum 80 (2006) 990-995

The conductivity of Mg-doped InN
V. Cimalla, M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, and W. J. Schaff
phys. stat. sol. (c) 3 (2006) 1721-1724

Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
V. Lebedev, F.M. Morales, H. Romanus, G. Ecke, V. Cimalla, M. Himmerlich, S. Krischok, J.A. Schäfer, and O. Ambacher
phys. stat. sol. (c) 3 (2006) 1420-1424

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material 
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher,
Sensors Actuat. B (2006) submitted. 

Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy
V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J. A. Schaefer, H. Lu, and W. J. Schaff
phys. stat. sol. (a) 203 (1) (2006), 59

Surface passivation of GaAs using a Ge interface control layer
D. Jishiashvili, G. Gobsch, G. Ecke, V. Gobronidze, G. Mtskeradze, Z. Shiolashvili
phys. stat. sol. (a) 202(9) (2005) 1778-1785 

The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
V. Lebedev, F.M. Morales, H. Romanus, S. Krischok, G. Ecke, V. Cimalla, M. Himmerlich, T. Stauden, D. Cengher, and O. Ambacher, 
J. Appl. Phys. 98 (2005) 093508

Tribological characteristics of WC1-x, W2C and WC tungsten carbide films
M. Gubisch, Y. Liu, S. Krischok, G. Ecke, L. Spiess, J. A. Schäfer, C. Knedlik
Tribology and Interface Engineering, 48 (2005) 409-417

Nanoscale multilayer WC/C coatings developed for nanopositioning: Part I. Microstructures and mechanical properties
M. Gubisch, Y. Liu, L. Spiess, H. Romanus, S. Krischok, G. Ecke, J. A. Schaefer, Ch. Knedlik
Thin Solid Films 488 (2005) 132-139

Surface conductivity of epitaxial InN
V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn, H. Lu and W.J. Schaff
phys. stat. sol. (c) 7 (2005) 2254-2257

Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions
P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zgheib, M. Voelskow, W. Skorupa, O. Ambacher, J Pezoldt 
phys. stat. sol. (a) 202 (2005) 545-549

Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification 
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennegues, A. Leycuras, D. Panknin, J. Stoemenos, W.Skorupa 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 213–216

Comparison of normal and inverse poly (3-hexylthiophene) /fullerene solar cell architectures
M. Al-Ibrahim, S. Sensfuss, J. Uziel, G. Ecke, O. Ambacher
Sol. Energy Mater. Sol. Cells 85/2 (2005) 277

Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets
C. Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok, V. Yanev, G. Ecke, J.A. Schaefer, and O. Ambacher
Proc. IEEE Sensors 2004, October, 24-27, Vienna, Austria, 1007-1010


Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

E. Aperathitis, M. Modreanu, M. Bender, V. Cimalla, G. Ecke, M. Androulidaki, and N. Pelekanos  
Thin Solid Films 450 (2004) 101–104

Auger Electron Spectroscopy of Silicon Carbide
R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza
J. Electrical Eng. 55 (2004) 269-272

Cubic InN on r-plane sapphire
V. Cimalla, U. Kaiser, I. Cimalla, G. Ecke, J. Pezoldt, L. Spiess, O. Ambacher 
Superlattices Microstruct. 36 (2004) 487-495

SIMS investigations of the influence of Ge pre-deposition on the interface quality between SiC and Si
J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F.M Morales , R. Kosiba, G. Ecke, P. Weih, O. Ambacher 
Surf. Interface Anal. 36 (2004) 969-972

Diffusion from platinum silicide for the local lifetime control in Silicon
J. Vobecky, P. Hazdra, G. Ecke, D. Kolesnikov
International Seminar on Power Semiconductors, Prague, 31. August-3. September 2004, Conf. Proc. 187-190

Growth of AlxGa1-xN-layers on planar and patterned substrates
U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter
J. Cryst. Growth 272 (2004) 506

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, and O. Ambacher
Nucl. Instr. and Meth. B 215 (2004) 486-494

Investigations of MBE grown InN and the influence of sputtering on the surface composition
R. Krischok, V. Yanev, O. Balykov, M. Himmerlich, J.A. Schäfer, R. Kosiba, G. Ecke, I. Cimalla, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, and L.F. Eastman 
Surface Science 566-568 (2004) 849-855

3C-SiC:Ge alloy grown on Si(111) substrates by SSMBE
P. Weih, V. Cimalla, Th. Stauden, R. Kosiba, G. Ecke, L. Spiess, 
H. Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt 
phys. stat. sol. (c) 1 (2004) 347

Etching of SiC with fluorine ECR plasma
Ch. Förster, V. Cimalla, R. Kosiba, G. Ecke, P. Weih, O. Ambacher, J. Pezoldt 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 821

Ionenstrahlätzen von Siliziumkarbid 
Ch. Förster, V. Cimalla, J. Pezoldt, G. Ecke, O. Ambacher
In: Thüringer Werkstofftag 2004 - Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd. 18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik, Verlag Dr. Köster, Berlin 2004, 185

Comparison of normal and inverse poly(3-alkylthiophene)/fullerene solar cell architectures 
M. Al-Ibrahim, S. Sensfuss, G. Ecke, O. Ambacher
40th International Symposium on macromolecules (Macro 2004), Paris, (4.-9. July 2004)

Polymer solar cells with normal and inverse architectures
M. Al-Ibrahim, H.-K- Roth, S. Sensfuss, J. Uziel, G. Ecke, O. Ambacher
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany (28.-30. Sept. 2004)

Sputter depth profiling of GaN/InAlGan multi quantum well structures
G. Ecke, R. Kosiba, G. Kittler, K. Pelekanos, O. Ambacher
DPG Regensburg/Germany (8-12 April 2004)


Investigation of contacts of polymer solar cells by Auger sputter depth profiling 
G. Ecke, M. Al-Ibrahim, S. Sensfuss, O. Ambacher
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany, (28.-30. Sept. 2004)

Tungsten Carbide layers for Nanomeasuring Systems
L. Spiess; M. Gubisch; H. Romanus; M. Breiter; C. Müller; V. Cimalla; G. Ecke, Y. Liu, C. Knedlik
Proc. MICRO.tec 2003, VDE Verlag, Berlin, Offenbach, 2003, 165-170

Properties of rf-sputtered indium-tin-oxynitride thin films

E. Aperathitis, M. Bender, V. Cimalla, G. Ecke, and M. Modreanu
J. Appl. Phys. 94 (2003) 1258-1266

Auger depth profiling and factor analysis of SiC layers altered by sputtering

R. Kosiba, G. Ecke, J. Liday, J. Breza, and O. Ambacher
J. Electr. Eng. 54 (2003) 25-29

Auger investigations of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher
Appl. Surf. Sci. 220 (2003) 304

Growth of cubic InN on r-plane sapphire
V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieß, G. Teichert, H. L., W. J. Schaff 
Appl. Phys. Lett. 83 (2003) 3468-3470 

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, S. Krischok, J.A. Schaefer, O. Ambacher, W.J. Schaff,
Nucl. Instr. and Meth. B (2003) accepted for publication

Sputtering of SiC with low energy He and Ar ions under grazing incidence
R. Kosiba, G. Ecke, O. Ambacher, M. Menyhard,
Radiat. Eff. Def. Sol. 158 (2003) 721

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher,
Appl. Surf. Sci. 220 (2003) 304

Dielectric Function of "Narrow" Band Gap InN
G. Goldhahn, S. Shokhovets, V. Cimalla, L. Spiess, G. Ecke, 
O. Ambacher, J. Furthmüller, F.Bechstedt, H. Lu, and W.J. Schaff,
Mat. Res. Soc. Symp. Proc., Fall Meeting, Boston (2003) submitted

Correlation between strain, optical and electrical properties of InN grown by MBE
V.Cimalla, Ch.Förster, G.Kittler, I.Cimalla, R.Kosiba, G.Ecke, O.Ambacher, R.Goldhahn, S.Shokhovets, A.Georgakilas, H.Lu, W.Schaff, 
phy. stat. sol. (c) 0 (2003) 2818-2821

The estimation of sputtering yields for SiC and Si
G. Ecke, R. Kosiba, V. Kharlamov, Y. Trushin and J. Pezoldt
Nucl. Instrum. Methods Phys. Res. B. 196 (2002) 39

MC simulations of depth profiling by low energy ions
R. Kosiba, and G. Ecke,
Nucl. Instrum. Methods Phys. Res. B. 187 (2002) 36

Quantitative Auger depth profiling of Ni/C multilayers by factor analysis and comparison with T-dyn simulations
J. Liday, M. Catarova, E. Matuskova, R. Kosiba, G. Ecke, P. Vogrincic, and J. Breza,
J. Electr. Eng. 52, 5 (2001) 162

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc. of SPIE, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 281

The influence of foreign atoms on the the early stages of SiC growth on (111)Si
J. Pezoldt, P. Masri, M. Roughani Laridjani, P. Falgayrettes, M. Averous, T. Wöhner, Th. Stauden, G. Ecke, and R. Pieterwas, and L. Spieß,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, 
part 1, 338 (2000) 289

A new method of the determination of significant factors with factor analysis in AES
R. Pieterwas, G. Ecke, R. Kosiba, and H. Rößler,
Fresenius J. Anal. Chem. 368 (2000) 326

Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H. Romanus, V. Cimalla, J. A. Schaefer, L. Spieß, G. Ecke, and J. Pezoldt,
Thin Solid Films 359 (2000) 146

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc. of SPIE, Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 281

The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. (1999)

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of atomic mixing, preferential sputtering and quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, and J. Pezoldt,
Third International workshop on: New Approaches to High-Tech: Nondestructive Testing and Computer Simulations in Science and Engeneering. 7.-11. June 1999, St. Petersburg; Russia, Conf. Proc. SPAS 3

Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, G. Ecke, W. Fukarek, W. Skorupa, and J. Pezoldt,
Nucl. Instrum. Methods Phys. Res. B 147 (1999) 279

Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon
J. Scheiner, R. Goldhahn, V. Cimalla, G. Ecke, W. Attenberger, J. K. N. Lindner, G. Gobsch, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 526

The influence of ion beam sputtering on the composition of the near surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. 365 (1999) 195

Ionenstrahl-induzierte Oberflächenrauhigkeit auf Metallisierungsschichten und deren Einfluss auf AES Tiefenprofile
Th. Wöhner, G. Ecke, and H. Rößler,
43. IWK Ilmenau, Sept. 1998, Conf.-Proc. 

Depth Profiles of Multilayer Structures: Measured by AES and Simulated
J. Liday, G. Ecke, R. Kosiba, P. Vogrincic, and J. Breza,
43. IWK Ilmenau, Sept. 1998, Conf.-Proc.

Sputtering-induced Surface Roughness of Polycrystalline Al Films and its Influence on AES Depth Profiles
Th. Wöhner, G. Ecke, H. Rößler, and S. Hofmann,
Surf. Interface Anal. 26 (1998) 1

High Sensitive Thermal Sensors in heat Spreading Diamond Films for Industrial Applications
J. Bonhaus, W. Borchert, F. Fontage, Th. Harlander, G. Ecke, and W. Fahrner,
IEEE Conference, Peteroria 1998

Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
J. Pezoldt, Th. Stauden, V. Cimalla, G. Ecke, H. Romanus, and G. Eichhorn,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 251

The measurement of the thickness of thin SiC layers on Silicon
V. Cimalla, J. Scheiner, G. Ecke, M. Friedrich, R. Goldhahn, D. R. T. Zahn, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 641

Deposition of aluminum nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
G. Ecke, G. Eichhorn, J. Pezoldt, C. Reinhold, Th. Stauden, and F. Supplieth,
Surf. Coat. Technol. 98 (1998) 1503

Auger investigations of thin SiC films
G. Ecke, H. Rößler, V. Cimalla, J. Pezoldt, and Th. Stauden,
Fresenius J. Anal. Chem., 361 (1998) 564

Ein Wachstumsmodell für die Karbonisierung von Siliziumsubstraten
W. Attenberger, J. K. N. Lindener, B. Stritzker, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24. September, 1998, Ilmenau, 2 (1998) 476

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, S. Sloboshanin, J.A. Schaefer, and J. Pezoldt,
Appl. Phys. Lett. 73 (1998) 3542

s 197, 210-216 (2014)

Multifrequency X, W-band ESR study on photo-induced ion radical formation in solid films of mono-and di-fullerenes embedded in conjugated polymers
A. Konkin, U. Ritter, P. Scharff, G. Mamin, A. Aganov, S. Orlinskii, V. Krinichnyi, DAM Egbe, G. Ecke, H. Romanus
Synthetic Metals 197, 210-216 (2014)

Influence of Thermal Annealing on PCDTBT: PCBM Composition ProfilesO. Synooka, K.‐R. Eberhardt, C. R. Singh, F. Hermann, G. Ecke, B. Ecker, E. von Hauff, G. Gobsch, H. Hoppe
Advanced Energy Materials 4 (5) (2014)

AlGaN based MEMS structures
B. Hähnlein, K. Tonisch, G. Ecke, R. Grieseler, S. Michael, P. Schaaf, J. Pezoldt
physica status solidi (c) 11 (2), 239-243 (2014)

AlGaN solution growth on 3C-SiC(111)/Si(111) pseudosubstrates
K. Tonisch, R. Benzig, G. Ecke, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 103-106

Smooth ceramic titanium nitride contacts on AlNGaN/GaN-heterostructures
C. Maus, T. Stauden, G. Ecke, K. Tonisch and J. Pezoldt
Semicond. Sci. Technol. 27 (2012) 115007

ESR and LESR X-band study of morphology and charge carrier interaction in
blended P3HT–SWCNT and P3HT–PCBM–SWCNT solid thin films
A. Konkin, C.Bounioux, U. Ritter, P. Scharff, E.A. Katz, A. Aganov, G. Gobsch, H. Hoppe, G. Ecke, H.-K. Roth
Syntetic Metals 161(2011) 2241-2248

Contribution to the quantitative analysis of ternary alloys of group III- Nitrides by Auger Spectroscopy
J. Liday, G. Ecke, T. Baumann, P. Vogrincic, J. Breza
J. Electr. Engineering 61 (1) 2010, 62-64

Effect of annealing on theproperties of Indium-Tin-Oxynitride Films as ohmic contactsfor GaN-based optoelectronics devices
M. Himmerlich, M. Koufaki, G. Ecke, Ch. Mauder, V. Cimalla, J.A. Schäfer, A. Kondalis, N.T. Pelekanos, M. Modreanu, S. Krischok and E. Aperathitis
Appl. Mat. Int. 1(2009) 1451-1456

Isotropic etching of SiC

Th. Stauden, F. Niebelschütz, K. Tonisch, V. Cimalla, G. Ecke, Ch. Haupt, and J. Pezoldt
Materials Science Forum 600-603 (2009) 651-654

Investigation of NiO-based contacts on p-GaN
 
J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vincze, I. Vavra, A. Satka, G. Ecke, A. Bonanni, J. Breza, C. Simbrunner, B. Plochberger
 J. Mater Sci: Mater Electron 19 (2008) 855-862 DOI 10.1007/s 10854-007-9520-1

InN/In2Oheterostructures
Ch. Y. Wang, V. Cimalla, V. Lebedev, Th. Kups, G. Ecke, S. Hauguth, O. Ambacher, J.G. Lorenzo, F. M. Morales, and D. Gonzales
phys. stat. sol. (c) 5 (2008) 1627–1629
DOI: 10.1002/pssc.200778549


Ozone and UV assistend oxidation of InN surfaces
G. Ecke, Ch. Y. Wang, V. Cimalla, and O. Ambacher
phys. stat. sol. (c) 5 (2008) 1603–1605
DOI: 10.1002/pssc.200778519


Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process
J. Pezoldt, R. Nader, Ch. Zgheib, G. Ecke, R. Pieterwas, Th. Stauden, Th. Wöhner and P. Masri
Surf. Interface Anal. 40 (2008) 794-797
DOI: 10.1002/sia.2618


Investigation of NiOx-based contacts on p-GaN
J. Liday, I. Hotovy, H. Sitter, P. Vogrincic, A. Vince, I. Vavra, A. Satka, G. Ecke, A. Bonanni, J. Breza, C. Simbrunner, B. Plochberger
J. Mater Sci: Mater Electron (2007) 10854

Analysis of nanostructures by means of Auger electron spectroscopy
G. Ecke, V. Cimalla, K. Tonisch, V. Lebedev, H. Romanus, O. Ambacher, and J. Liday
J. Electrical Eng. 58 (2007) 301-306

Ionenimplantierte Titanoberflächen für den Hartgewebeersatz
C. Blank, S. Krischok, R. Gutt, M. Engel, J. A. Schäfer, J. Schawohl, L. Spieß, Ch. Knedlik, G. Ecke, F. Schrempel, E. Hüger, G. Hildebrand, K. Liefeith
BIOmaterialien 8 (2007) 285-292

Surface composition and electronic properties of indium tin oxide and oxynitride films
M. Himmerlich, M. Koufaki, Ch. Mauder, G. Ecke, V. Cimalla, J. A. Schäfer, E. Aperathitis, S. Krischok
Surf. Sci. 601 (2007) 4082-4086

Auger electron spectroscopy of Au/NiOx contacts on p-GaN annealed in N2 and O2 + N2 ambients

J. Liday, I. Hotovy, H. Sitter, K. Schmidegg, P. Vogrincic, A. Bonnani, J. Breza, G. Ecke, I. Vavra
Appl. Surf. Sci. 235 (2007) 3174-3180

Growth of silicon nanowires on UV-structurable glass using self-organized nucleation centres

K. Tonisch, F. Weise, M. Stubenrauch, V. Cimalla, G. Ecke, F. Will, H. Romanus, S. Mrotzek, H. Hofmeister, M. Hoffmann, D. Hülsenberg and O. Ambacher
Physica E 38 (2007) 40-43

Reduced surface electron accumulation at InN films by ozone induced oxidation

V. Cimalla, V. Lebedev, Ch. Y. Wang, M. Ali, G. Ecke, V. M. Polyakov, F. Schwierz, O. Ambacher, H. Lu, and W. J. Schaff
 Appl. Phys. Lett. 101 (2007) 152106

SiC-based FET for detection of NOand O2 using InSnOx as a gate material 
 
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik and O. Ambacher
 Sens. Actuat. B 122 (2007) 182-186

Reactively sputtered InxVyOz films for detection of NOx, D2, and O2

M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher
Sens. Actuators B 123 (2007) 779-783

Effect of surface oxidation on electron density and transport properties of InN thin films

V. Lebedev, V. Cimalla, Ch. Y. Wang, G. Ecke, S. Hauguth, M. Ali and O. Ambacher, V. M. Polyakov and F. Schwierz
J. Appl. Phys.101 (2007) 123705

Space charge limited electron transport in AlGaN photoconductors
V. Lebedev, G. Cherkashinin, G. Ecke, I. Cimalla, and O. Ambacher
J. Appl. Phys. 101 (2007) 033705

Fermi level analysis of group III nitride semiconductor device structures by Auger peak position measurements
G. Ecke, M. Niebelschütz, R. Kosiba, U. Rossow, V. Cimalla, J. Liday, P. Vogrincic, J. Pezoldt, V. Lebedev, and O. Ambacher
J. Electr. Engin. 57 (2006) 354-359

Low Energy Ion Modification of 3C-SiC Surfaces
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, and J. Pezoldt
Silicon Carbide and Related Materials 2005 (ICSCRM 2005), Mater. Sci. Forum 527-529, (2006) 685–688.

Origin of n-type conductivity in nominally undoped InN
V. Cimalla, V. Lebedev, F.M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, O. Ambacher
Mat. wiss. Werkst. techn. 37 (2006) 924

Austrittsarbeitsanalyse von GaN basierten Lateral Polarity Strukturen durch Auger-Elektronen-Energie-Messungen
M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, O. Ambacher
Mat. wiss. Werkst. techn. 37 (2006) 937

Optical emission spectroscopy during fabrication of indium -tin-oxynitride films by RF-sputtering
M. Koufaki, M. Sifakis, E. Iliopoulos, N. Pelekanos, M. Modreanu, V. Cimalla, G. Ecke, E. Aperathitis
Appl. Surf. Sci. 253 (2006) 405-408

Work Function Analysis of GaN-based Lateral Polarity Structures by Auger Electron Energy Measurements

M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch, and O. Ambacher
J. Appl. Phys. 100 (2006) 074909

Self organization and properties of Black Silicon
 
M. Fischer, M. Stubenrauch, Th. Kups, H. Romanus, F.M. Morales, G. Ecke, M. Hoffmann, C. Knedlik, O. Ambacher and J. Pezoldt
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 237

Origin of n-type conductivity in nominally undoped InN
 
V. Cimalla, V. Lebedev, F. M. Morales, M. Niebelschütz, G. Ecke, R. Goldhahn, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, September 11 – 15, (2006) 303


Work Function Analysis of GaN-based Lateral Polarity 
Structures by Auger Electron Energy Measurements
M. Niebelschütz, G. Ecke, V. Cimalla, K. Tonisch and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 297

Composition Measurements of Group-III Nitride Ternary 
and Quaternary Compound Nanostructures by AES 
G. Ecke, T. Baumann, O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 253

SiC-based FET for NOx gas sensing applications using 
InVOx metal oxides as a gate material
M. Ali, G. Ecke, V. Cimalla, Th. Stauden, V. Tilak, P. Sandvik, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 245

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities 
J. Pezoldt, F.M. Morales, Ch. Zgheib, Ch. Förster, Th. Stauden, G. Ecke, Ch. Wang, P. Masri 
Surf. Interface Anal. 38 (2006) 444 - 447 

Low Energy Ion Modification of 3C-SiC Surfaces 
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, J. Pezoldt 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 685 - 688 

Tuning of Surface Properties of AlGaN/GaN Sensors for Nanodroplets and Picodroplets
C.Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok,V. Yanev, M. Himmerlich, G. Ecke, J. A. Schäfer, and O. Ambacher
IEEE Sensors Journal 6 (2006) 881-886 

Phase selective growth and properties of rhombohedral and cubic indium oxide
Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, G. Ecke, Th. Stauden, M. Ali, V. Lebedev, J. Pezoldt, and O. Ambacher
Appl. Phys. Lett. 89 (2006) 011904

Quantitative Auger electron spectroscopy of SiC
R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza, P. Vogrincic
Vacuum 80 (2006) 990-995

The conductivity of Mg-doped InN
V. Cimalla, M. Niebelschütz, G. Ecke, O. Ambacher, R. Goldhahn, H. Lu, and W. J. Schaff
phys. stat. sol. (c) 3 (2006) 1721-1724

Doping efficiency and segregation of Si in AlN grown by molecular beam epitaxy
V. Lebedev, F.M. Morales, H. Romanus, G. Ecke, V. Cimalla, M. Himmerlich, S. Krischok, J.A. Schäfer, and O. Ambacher
phys. stat. sol. (c) 3 (2006) 1420-1424

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material 
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher,
Sensors Actuat. B (2006) submitted. 

Surface band bending at nominally undoped and Mg-doped InN by Auger Electron Spectroscopy
V. Cimalla, M. Niebelschütz, G. Ecke, V. Lebedev, O. Ambacher, M. Himmerlich, S. Krischok, J. A. Schaefer, H. Lu, and W. J. Schaff
phys. stat. sol. (a) 203 (1) (2006), 59

Surface passivation of GaAs using a Ge interface control layer
D. Jishiashvili, G. Gobsch, G. Ecke, V. Gobronidze, G. Mtskeradze, Z. Shiolashvili
phys. stat. sol. (a) 202(9) (2005) 1778-1785 

The role of Si as surfactant and donor in molecular-beam epitaxy of AlN
V. Lebedev, F.M. Morales, H. Romanus, S. Krischok, G. Ecke, V. Cimalla, M. Himmerlich, T. Stauden, D. Cengher, and O. Ambacher, 
J. Appl. Phys. 98 (2005) 093508

Tribological characteristics of WC1-x, W2C and WC tungsten carbide films
M. Gubisch, Y. Liu, S. Krischok, G. Ecke, L. Spiess, J. A. Schäfer, C. Knedlik
Tribology and Interface Engineering, 48 (2005) 409-417

Nanoscale multilayer WC/C coatings developed for nanopositioning: Part I. Microstructures and mechanical properties
M. Gubisch, Y. Liu, L. Spiess, H. Romanus, S. Krischok, G. Ecke, J. A. Schaefer, Ch. Knedlik
Thin Solid Films 488 (2005) 132-139

Surface conductivity of epitaxial InN
V. Cimalla, G. Ecke, M. Niebelschütz, O. Ambacher, R. Goldhahn, H. Lu and W.J. Schaff
phys. stat. sol. (c) 7 (2005) 2254-2257

Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions
P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zgheib, M. Voelskow, W. Skorupa, O. Ambacher, J Pezoldt 
phys. stat. sol. (a) 202 (2005) 545-549

Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification 
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennegues, A. Leycuras, D. Panknin, J. Stoemenos, W.Skorupa 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 213–216

Comparison of normal and inverse poly (3-hexylthiophene) /fullerene solar cell architectures
M. Al-Ibrahim, S. Sensfuss, J. Uziel, G. Ecke, O. Ambacher
Sol. Energy Mater. Sol. Cells 85/2 (2005) 277

Surface modifications of AlGaN/GaN sensors for water based nano- and picodroplets
C. Buchheim, G. Kittler, V. Cimalla, V. Lebedev, M. Fischer, S. Krischok, V. Yanev, G. Ecke, J.A. Schaefer, and O. Ambacher
Proc. IEEE Sensors 2004, October, 24-27, Vienna, Austria, 1007-1010


Optical characterization of indium-tin-oxynitride fabricated by RF-sputtering

E. Aperathitis, M. Modreanu, M. Bender, V. Cimalla, G. Ecke, M. Androulidaki, and N. Pelekanos  
Thin Solid Films 450 (2004) 101–104

Auger Electron Spectroscopy of Silicon Carbide
R. Kosiba, J. Liday, G. Ecke, O. Ambacher, J. Breza
J. Electrical Eng. 55 (2004) 269-272

Cubic InN on r-plane sapphire
V. Cimalla, U. Kaiser, I. Cimalla, G. Ecke, J. Pezoldt, L. Spiess, O. Ambacher 
Superlattices Microstruct. 36 (2004) 487-495

SIMS investigations of the influence of Ge pre-deposition on the interface quality between SiC and Si
J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F.M Morales , R. Kosiba, G. Ecke, P. Weih, O. Ambacher 
Surf. Interface Anal. 36 (2004) 969-972

Diffusion from platinum silicide for the local lifetime control in Silicon
J. Vobecky, P. Hazdra, G. Ecke, D. Kolesnikov
International Seminar on Power Semiconductors, Prague, 31. August-3. September 2004, Conf. Proc. 187-190

Growth of AlxGa1-xN-layers on planar and patterned substrates
U. Rossow, D. Fuhrmann, M. Greve, J. Bläsing, A. Krost, G. Ecke, N. Riedel, A. Hangleiter
J. Cryst. Growth 272 (2004) 506

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, and O. Ambacher
Nucl. Instr. and Meth. B 215 (2004) 486-494

Investigations of MBE grown InN and the influence of sputtering on the surface composition
R. Krischok, V. Yanev, O. Balykov, M. Himmerlich, J.A. Schäfer, R. Kosiba, G. Ecke, I. Cimalla, V. Cimalla, O. Ambacher, H. Lu, W.J. Schaff, and L.F. Eastman 
Surface Science 566-568 (2004) 849-855

3C-SiC:Ge alloy grown on Si(111) substrates by SSMBE
P. Weih, V. Cimalla, Th. Stauden, R. Kosiba, G. Ecke, L. Spiess, 
H. Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt 
phys. stat. sol. (c) 1 (2004) 347

Etching of SiC with fluorine ECR plasma
Ch. Förster, V. Cimalla, R. Kosiba, G. Ecke, P. Weih, O. Ambacher, J. Pezoldt 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 821

Ionenstrahlätzen von Siliziumkarbid 
Ch. Förster, V. Cimalla, J. Pezoldt, G. Ecke, O. Ambacher
In: Thüringer Werkstofftag 2004 - Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd. 18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik, Verlag Dr. Köster, Berlin 2004, 185

Comparison of normal and inverse poly(3-alkylthiophene)/fullerene solar cell architectures 
M. Al-Ibrahim, S. Sensfuss, G. Ecke, O. Ambacher
40th International Symposium on macromolecules (Macro 2004), Paris, (4.-9. July 2004)

Polymer solar cells with normal and inverse architectures
M. Al-Ibrahim, H.-K- Roth, S. Sensfuss, J. Uziel, G. Ecke, O. Ambacher
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany (28.-30. Sept. 2004)

Sputter depth profiling of GaN/InAlGan multi quantum well structures
G. Ecke, R. Kosiba, G. Kittler, K. Pelekanos, O. Ambacher
DPG Regensburg/Germany (8-12 April 2004)


Investigation of contacts of polymer solar cells by Auger sputter depth profiling 
G. Ecke, M. Al-Ibrahim, S. Sensfuss, O. Ambacher
Technology for Polymer Electronics 04, TITK Rudolstadt/ Germany, (28.-30. Sept. 2004)

Tungsten Carbide layers for Nanomeasuring Systems
L. Spiess; M. Gubisch; H. Romanus; M. Breiter; C. Müller; V. Cimalla; G. Ecke, Y. Liu, C. Knedlik
Proc. MICRO.tec 2003, VDE Verlag, Berlin, Offenbach, 2003, 165-170

Properties of rf-sputtered indium-tin-oxynitride thin films

E. Aperathitis, M. Bender, V. Cimalla, G. Ecke, and M. Modreanu
J. Appl. Phys. 94 (2003) 1258-1266

Auger depth profiling and factor analysis of SiC layers altered by sputtering

R. Kosiba, G. Ecke, J. Liday, J. Breza, and O. Ambacher
J. Electr. Eng. 54 (2003) 25-29

Auger investigations of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher
Appl. Surf. Sci. 220 (2003) 304

Growth of cubic InN on r-plane sapphire
V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieß, G. Teichert, H. L., W. J. Schaff 
Appl. Phys. Lett. 83 (2003) 3468-3470 

Sputter depth profiling of InN layers
R. Kosiba, G. Ecke, V. Cimalla, L. Spieß, S. Krischok, J.A. Schaefer, O. Ambacher, W.J. Schaff,
Nucl. Instr. and Meth. B (2003) accepted for publication

Sputtering of SiC with low energy He and Ar ions under grazing incidence
R. Kosiba, G. Ecke, O. Ambacher, M. Menyhard,
Radiat. Eff. Def. Sol. 158 (2003) 721

Auger electron spectroscopy investigation of sputter induced altered layers in SiC by low energy sputter depth profiling and factor analysis
R. Kosiba, G. Ecke, J. Liday, J. Breza, O. Ambacher,
Appl. Surf. Sci. 220 (2003) 304

Dielectric Function of "Narrow" Band Gap InN
G. Goldhahn, S. Shokhovets, V. Cimalla, L. Spiess, G. Ecke, 
O. Ambacher, J. Furthmüller, F.Bechstedt, H. Lu, and W.J. Schaff,
Mat. Res. Soc. Symp. Proc., Fall Meeting, Boston (2003) submitted

Correlation between strain, optical and electrical properties of InN grown by MBE
V.Cimalla, Ch.Förster, G.Kittler, I.Cimalla, R.Kosiba, G.Ecke, O.Ambacher, R.Goldhahn, S.Shokhovets, A.Georgakilas, H.Lu, W.Schaff, 
phy. stat. sol. (c) 0 (2003) 2818-2821

The estimation of sputtering yields for SiC and Si
G. Ecke, R. Kosiba, V. Kharlamov, Y. Trushin and J. Pezoldt
Nucl. Instrum. Methods Phys. Res. B. 196 (2002) 39

MC simulations of depth profiling by low energy ions
R. Kosiba, and G. Ecke,
Nucl. Instrum. Methods Phys. Res. B. 187 (2002) 36

Quantitative Auger depth profiling of Ni/C multilayers by factor analysis and comparison with T-dyn simulations
J. Liday, M. Catarova, E. Matuskova, R. Kosiba, G. Ecke, P. Vogrincic, and J. Breza,
J. Electr. Eng. 52, 5 (2001) 162

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc. of SPIE, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 281

The influence of foreign atoms on the the early stages of SiC growth on (111)Si
J. Pezoldt, P. Masri, M. Roughani Laridjani, P. Falgayrettes, M. Averous, T. Wöhner, Th. Stauden, G. Ecke, and R. Pieterwas, and L. Spieß,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, 
part 1, 338 (2000) 289

A new method of the determination of significant factors with factor analysis in AES
R. Pieterwas, G. Ecke, R. Kosiba, and H. Rößler,
Fresenius J. Anal. Chem. 368 (2000) 326

Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H. Romanus, V. Cimalla, J. A. Schaefer, L. Spieß, G. Ecke, and J. Pezoldt,
Thin Solid Films 359 (2000) 146

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc. of SPIE, Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99) 4064 (2000) 281

The influence of ion beam sputtering on the composition of the near-surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. (1999)

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of atomic mixing, preferential sputtering and quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, and J. Pezoldt,
Third International workshop on: New Approaches to High-Tech: Nondestructive Testing and Computer Simulations in Science and Engeneering. 7.-11. June 1999, St. Petersburg; Russia, Conf. Proc. SPAS 3

Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, G. Ecke, W. Fukarek, W. Skorupa, and J. Pezoldt,
Nucl. Instrum. Methods Phys. Res. B 147 (1999) 279

Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon
J. Scheiner, R. Goldhahn, V. Cimalla, G. Ecke, W. Attenberger, J. K. N. Lindner, G. Gobsch, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 526

The influence of ion beam sputtering on the composition of the near surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. 365 (1999) 195

Ionenstrahl-induzierte Oberflächenrauhigkeit auf Metallisierungsschichten und deren Einfluss auf AES Tiefenprofile
Th. Wöhner, G. Ecke, and H. Rößler,
43. IWK Ilmenau, Sept. 1998, Conf.-Proc. 

Depth Profiles of Multilayer Structures: Measured by AES and Simulated
J. Liday, G. Ecke, R. Kosiba, P. Vogrincic, and J. Breza,
43. IWK Ilmenau, Sept. 1998, Conf.-Proc.

Sputtering-induced Surface Roughness of Polycrystalline Al Films and its Influence on AES Depth Profiles
Th. Wöhner, G. Ecke, H. Rößler, and S. Hofmann,
Surf. Interface Anal. 26 (1998) 1

High Sensitive Thermal Sensors in heat Spreading Diamond Films for Industrial Applications
J. Bonhaus, W. Borchert, F. Fontage, Th. Harlander, G. Ecke, and W. Fahrner,
IEEE Conference, Peteroria 1998

Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
J. Pezoldt, Th. Stauden, V. Cimalla, G. Ecke, H. Romanus, and G. Eichhorn,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 251

The measurement of the thickness of thin SiC layers on Silicon
V. Cimalla, J. Scheiner, G. Ecke, M. Friedrich, R. Goldhahn, D. R. T. Zahn, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 641

Deposition of aluminum nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
G. Ecke, G. Eichhorn, J. Pezoldt, C. Reinhold, Th. Stauden, and F. Supplieth,
Surf. Coat. Technol. 98 (1998) 1503

Auger investigations of thin SiC films
G. Ecke, H. Rößler, V. Cimalla, J. Pezoldt, and Th. Stauden,
Fresenius J. Anal. Chem., 361 (1998) 564

Ein Wachstumsmodell für die Karbonisierung von Siliziumsubstraten
W. Attenberger, J. K. N. Lindener, B. Stritzker, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24. September, 1998, Ilmenau, 2 (1998) 476

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, S. Sloboshanin, J.A. Schaefer, and J. Pezoldt,
Appl. Phys. Lett. 73 (1998) 3542