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Jörg Pezoldt: Publikationen

Self aligned growth of nanoparticle-based interconnects
L. Schlag, N. Isaac, H. Nahrstedt, J.T. Reiprich, J. Pezoldt, H. Jacob
p. 303 - 306, In: Proceedings of the 2018 IEEE 13th Nanotechnology Materials and Decices Conference (NMDC), IEEE, Piscataway, 2018

Metamorphic and stretchable electronic systems – A Materials Assembly, and Interconnection Challenge
S. Biswas, M. Mozafari, J. Reiprich, L. Schlag, N.A. Isaac, T. Stauden, J. Pezoldt, H.O. Jacobs
pp. 64-65, In: Microsystems Technology in Germany 2018 (Mikrosystemtechnik in Deutschland 2018) (ISSN 2191-7183, trias CONSULT, Berlin, 2018).

Engineering of III-Nitride semiconductors on low temperature co-fired ceramics

J.M. Manuel, J.J. Jimenez, F.M. Morales, B. Lacroix, A.J. Santos, R. Garcia, E. Blanco, M. Dominguez, M. Ramirez, A.M. Beltran, D. Alexandrov, J. Tot, R. Dubreuil, V. Videkov, S. Andreev, B. Tzaneva, H. Bartsch, J. Breiling, J. Pezoldt, M. Fischer, J. Müller
Sci. Rep. 8 (2018) 6879.

Defects and polytype instabilities

J. Pezoldt, A.A. Kalnin
Mater. Sci. Forum 924 (2018) 147-150.

Infrared reflectance study of the graphene/semi-insulating 6H-SiC(0001) heterostructure
M. Auge, B. Hähnlein, J. Pezoldt
Mater. Sci. Forum 924 (2018) 314-317.

MOCVD compatible atomic layer deposition process of Al2O3 on SiC and graphene/SiC heterostructures
M. Eckstein, C. Koppka, S. Thiele, Y. Mi, R. Xu, Y. Lei, B. Hähnlein, F. Schwierz, J. Pezoldt
Mater. Sci. Forum 924 (2018) 506-510.

Reconstruction of concentration profiles in heterostructures with chemically modified interfaces
V.S. Kharlamov, D.V. Kulikov, M.N. Lubov, Ch. Zgheib, H. Romanus, Yu.V. Trushin, J. Pezoldt
J. Appl. Phys. 123 (2018) 215302.

Localized collection of airborne biological hazards for environmental monitoring
J. Reiprich, M. Gebinoga, L.-P. Traue, L. Schlag, S. Biswas, M. Kaltwasser, M.C. Honecker, Th. Stauden, J. Pezoldt, A. Schober, H.O. Jacobs
Sens. Actuators, B 273 (2018) 906-915.

Radiative pumping and propagation of plexcitons in diffractive plasmonic crystals
Y. Zakharko, M. Rother, A. Graf, B. Hähnlein, J. Pezoldt, J. Zaumseil
Nano Lett. 18 (2018) 4927-4933.

Magnetron sputtered AlN layers on LTCC multilayer and silicon substrates
H. Bartsch, R. Grieseler, J. Manuel, J. Pezoldt, J. Müller
Coatings 8 (2018) 289.

Von Nanostrukturen zu metamorphen Systemen
J. Pezoldt, L. Schlag, M. Kaltwasser, S. Biswas, Th. Stauden, H.O. Jacobs
journal 10-9, Ausgabe 2 (2018) 41-42.

High quality graphene grown by sublimation on 4H-SiC(0001)
A.A. Lebedev, V.Yu. Davydov, D.Yu. Usachov, S.P. Lebedev, A.N. Smirnov, I.A. Eliseyev, M.S. Dunaevskiy, E.V. Gushchina, K.A. Bokai, J. Pezoldt
Semiconductors 52 (2018) 1882-1885.

Stress-adaptive meander track for stretchable electronics
S. Biswas, J. Reiprich, J. Pezoldt, M. Hein, Th. Stauden,  and H.O. Jacobs
Flex. Print. Electron. 3 (2018) 032001.

Effect of post-annealing treatment on the structure and luminescence properties of AlN:Tb3+ thin films prepared by radio frequency magnetron sputtering
K.Y. Tucto Salinas, L.F. Flores Escalante, J.A. Guerra Torres, R. Grieseler, T. Kups, J. Pezoldt, A. Osvet, M. Batentschuk, R. Weingärtner
Mater. Sci. Forum 890 (2017) 299-302.

High temperature grown graphene on SiC studied by Raman and FTIR spectroscopy
M. Auge, B. Hähnlein, M. Eckstein, G. Woltersdorf, J. Pezoldt
Mater. Sci. Forum 897 (2017) 727-730.

Nanostructuring of graphene on semi-insulating SiC
B. Hähnlein, M. Breiter, Th. Stauden, J. Pezoldt
Mater. Sci. Forum 897 (2017) 735-738.

Size effect of the silicon carbide Young’s modulus

B. Hähnlein, J. Kovac Jr., J. Pezoldt
Phys. Status Solidi A214 (2017) 1600390-1 - 1600390-9.

Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, U. Baumann, H.O. Jacobs, F. Schwierz, J. Pezoldt
Phys. Status Solidi A214 (2017) 1600415-1 - 1600415-7.

AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates
W. Jatal, I. Hörselmann, H.O. Jacobs, F. Schwierz, J. Pezoldt
Phys. Status Solidi A214 (2017) 1600416-1 - 1600416-6.

Multispectral electroluminescence enhancement of single-walled carbon nanotubes coupled to periodic nanodisk arrays
Y. Zakharko, M. Held, A. Graf, T. Rödleimer, R. Eckstein, G. Hernandez-Sos, B. Hähnlein, J. Pezoldt, J. Zaumseil
Optics Express 25 (2017) 18092-18106.

Transport properties of graphene films grown by thermodestruction of SiC(0001) surface in argon atmosphere
S.P. Lebedev, I.A. Eliseyev, V.Yu. Davydov, A.N. Smirnov, V.S. Levitskii, M.G. Mynbaeva, M.M. Kulagina, B. Hähnlein, J. Pezoldt, A.A. Lebedev
Tech. Phys. Lett. 43 (2017) 849-852.

Metamorphic hemispherical microphone array for three-dimensional acoustics
S. Biswas, J. Reiprich, Th. Cohrs, Th. Stauden, J. Pezoldt, and H.O. Jacobs
Appl. Phys. Lett. 111, 043109 (2017)  pdfDOI: 10.1063/1.4985710

3D Metamorphic Stretchable Microphone Arrays
S. Biswas, J. Reiprich, Th. Cohrs, D.T. Arboleda, A. Schöberl, M. Mozafari, L. Schlag, Th. Stauden, J. Pezoldt, and H.O. Jacobs
Adv. Mater. Technol. 2017, 1700131   pdfDOI: 10.1002/admt.201700131

Corona Assisted Ga Based Nanowire Growth on 3C-SiC (111)/Si (111) Pseudosubstrates

J. Reiprich, Th. Stauden, T. Berthold, M. Himmerlich, J. Pezoldt, H.O. Jacobs
Materials Science Forum (Volume 897), DOI: 10.4028/www.scientific.net/MSF.897.642

Selbstjustierendes Wachstum von 3D Nanobrückenverbindungen
L. Schlag, J. Reiprich, Th. Stauden, J. Pezoldt, A. Ispas, A. Bund, P. Schaaf, H.O. Jacob
S. 317-320, Proceedings MikroSystemTechnik Kongress 2017 „MEMS, Mikroelektronik, Systeme“ (ISBN 978-3-8007-4491-6), VDE Verlag HmbH, Berlin, 2017.

Lokalisierter Transport von Schwebstoffen zu programmierbaren, mikroskopischen Sensorpunkten durch Korona-Entladung
J. Reiprich, J. Fang, S.-C. Park, L. Schlag, T. Stauden, J. Pezoldt, H.O. Jacobs
S. 578-581, Proceedings  MikroSystemTechnik Kongress 2017 „MEMS, Mikroelektronik, Systeme“ (ISBN 978-3-8007-4491-6), VDE Verlag HmbH, Berlin, 2017.

Graphene nanoribbons for electronic devices
Z. Geng, B. Hähnlein, R. Granzner, M. Auge, A.A. Lebedev, V.Y. Davydov, M. Kittler, J. Pezoldt, F. Schwierz
Ann. Physik (Berlin) 529 (2017) 1700033-1 – 1700033-15.

Low temperature epitaxial deposition of GaN on LTCC substrates
D. Alexandrov, J. Tot, R. Dubreil, F.M. Morales, J.M. Manuel, J.J. Jimienez, B. Lacroix, R. Garcia, V. Videkov, S. Andreev, B. Tzaneva, H. Bartsch, J. Pezoldt, M. Fischer, J. Mueller
P. 48-54, Proceedings of the 2017 IEEE 5th Wokshop on Wide Bandgap Power Devices and Applications (WIPDA), IEEE, Piscataway, 2017.

Surface lattice resonances for enhanced and directional electroluminescence at high current densities
Y. Zakharenko, M. Held, A. Graf, T. Rödlmeier, R. Eckstein, G. Hernandez-Sosa, B. Hähnlein, J. Pezoldt, J. Zaumseil
ACS Photonics 3 (2016) 2225-2230.

2D electronics – oportunities and limitations
Z. Geng, W. Kinberger, R. Granzner, J. Pezoldt, F. Schwierz
In: Proceedings of the 46th European Solid-State Device Research Conference (ESSDERC2016), 12th – 15th Sept. 2016, Laussane, Switzerland, IEEE, Piscataway, Curan Associates Inc., Red Hook, New York, 2016, pp. 250-255

Approaching gas phase electrodeposition: Process and optimization to enable the self aligned growth of 3D nanobridge-based interconnects
J. Fang, L. Schlag, S.-C. Park, Th. Stauden, J. Pezoldt, P. Schaaf, H.O. Jacobs
Adv. Mater. 28 (2016) 1770-1779

Deformable printed circuit boards that enable metamorphic electronics
S. Biswas, A. Schöberl, M. Mozafari, J. Pezoldt, T. Stauden and  H.O. Jacobs
NPG Asia Materials 8 (2016)  pdfe336; doi:10.1038/am.2016.186

Simulation of 50 nm gate graphene nanoribbon transistors

C.N. Bondja, Z. Geng, R. Granzner, J. Pezoldt, F. Schwierz
Electronics 5, Issue 1, Article 3 (2016) 1-17

Elastic properties of nanolaminar Cr2AlC films and beams determined by in-situ scanning microscope bending test
R. Grieseler, F. Theska, T. Stürzel, B. Hähnlein, M. Stubenrauch, M. Hopfeld, T. Kups, J. Pezoldt, P. Schaaf
Thin Solid Films 604
(2016) 85-89

Heteropolytypic superlattices
J. Pezoldt
Mater. Sci. Forum 858 (2016) 278-282

Concentration profile simulation of SiC/Si heterostructures
J.Pezoldt, V.S. Kharlamov, D.V. Kulikov, M.N. Lubov, Y.V. Trushin

Mater. Sci. Forum 858 (2016) 501-504

Broadband tunable, polarization-selective and directional emission of (6,5) carbon nanotubes coupled to plasmonic crystals

Y. Zakharenko, A. Graf, S.P. Schießl, B. Hähnlein, J. Pezoldt, M.C. Gather, J. Zaumseil
Nano Lett. 16 (2016) 3278-3284

Amplification in Graphene Nanoribbon Junctions
J. Pezoldt, B. Hähnlein, H.O. Jacobs, F. Schwierz
Mat. Sci. Forum 858 (2016) 1141-1144

Tri-Gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates

W. Jatal, U.Baumann, H.O. Jacobs, F.Schwierz,J. Pezoldt

Mater. Sci. Forum 858 (2016) 1174-1177

Planar nanowire transistors from two-dimensional materials
B. Hähnlein,  M.A. Alsioufy,· M. Lootze, H.O. Jacobs, F. Schwierz, J. Pezoldt
Materials Science in Semiconductor Processing,42 (2016) 183-187

High-Frequency Performance of GaN High-Electron Mobility Transistors on 3C-SiC/Si Substrates With Au-Free Ohmic Contacts
W. Jatal, U. Baumann, K. Tonisch, F. Schwierz, J. Pezoldt
IEEE Electron Dev. Lett. 36 (2015) 123-125         


Ge addition during 4H-SiC epitaxial growth by CVD: mechanism of incorporation
V. Souliere, K. Alassaad, F. Cauwet, H. Peyre, T.Kups, J. Pezoldt, P. Kwasnicki, G. Ferro
Mater. Sci Forum 821-823 (2015) 115-120

Mechanical properties and residual stress of thin 3C-SiC(100) films determined using MEMS structures
B. Hähnlein, M. Stubenrauch, J. Pezoldt,
Mater. Sci Forum 821-823 (2015) 281-284

Two-dimensional materials and their prospects in transistor electronics
F. Schwierz, J. Pezoldt, R. Granzner
Nanoscale 7 (2015) 8261-8283

Localized collection of airborne analytes: A transport driven approach to improve the response time of existing gas sensor designs including SERS based detection of small molecules

J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt, H.O. Jacobs
MRS Online Proc., Symposium GG: Nanomaterials for harsh environment sensors and related electronic components – design, Synthesis, cjaracterization and utilization, Vol. 1746 (2015) Link

Active Matrix-Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger Print
J. Fang, S.-C. Park,L. Schlag, Th. Stauden, J.  Pezoldt and H. O. Jacobs
Adv. Mater. 2 7600–7607 (2014) http://dx.doi.org/10.1002/adma.201402589

Size effect of Young's modulus in AlN thin layers
B. Hähnlein, P. Schaaf, J. Pezoldt
J. Appl. Phys. 116 (12) 124306 (2014)

Ge incorporation inside 4H-SiC during homoepitaxial growth by chemical vapor deposition
K. Alassaad, V. Soulière, F. Cauwet, H. Peyre, D. Carole, P. Kwasnicki, S. Juillaguet, T. Kups, J. Pezoldt, G. Ferro
Acta Materialia 75 (2014) 219-226

Densification of Thin Aluminum Oxide Films by Thermal Treatments
V. Cimalla, M. Baeumler, L. Kirste, M. Prescher, B. Christian, T. Passow, F. Benkhelifa, F. Bernhardt, G. Eichapfel, M. Himmerlich, S. Krischok, J. Pezoldt
Mater. Sci. Applications, 5 (2014) 628-638

Mechanical Properties and Residual Stress of Thin 3C-SiC (111) Films Determined Using MEMS Structures
B. Hähnlein, M. Stubenrauch, S. Michael, J. Pezoldt
Mater. Sci. Forum 778 (2014) 444-448

Hydrogen Effects in ECR-Etching of 3C-SiC (100) Mesa Structures
L. Hiller, T. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt
Mater. Sci. Forum 778 (2014) 730-733

Nanostructured plasma etched, magnetron sputtered nanolaminar Cr< sub> 2</sub> AlC MAX phase thin films
R. Grieseler, B. Hähnlein, M. Stubenrauch, T. Kups, M. Wilke, M. Hopfeld, J. Pezoldt, P. Schaaf
Appl. Surf. Sci. 292 (2014) 997-1001

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improve the Response Time of Existing Gas Sensor Designs
J. Fang, S.C. Park, L. Schlag, T. Stauden, J. Pezoldt, H.O. Jacobs
Adv. Funct. Mater. 24 (2014) 3706-3714

Cubic GaN/AlN multi‐quantum wells grown on pre‐patterned 3C‐SiC/Si (001)
R.M. Kemper, C. Mietze, L. Hiller, T. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J.K.N. Lindner
physica status solidi (c) 11 (2), 265-268 (2014)

Side gate AlGaN/GaN FET on silicon and sapphire
L. Hiller, K. Tonisch, J. Pezoldt
physica status solidi (c) 11 (2), 280-283 (2014)

AlGaN based MEMS structures
B. Hähnlein, K. Tonisch, G. Ecke, R. Grieseler, S. Michael, P. Schaaf, J. Pezoldt
physica status solidi (c) 11 (2), 239-243 (2014)

Electrical gating and rectification in graphene three-terminal junctions
B. Händel, B. Hähnlein, R. Göckeritz, F. Schwierz, J. Pezoldt
Appl. Surf. Sci. 291 (2014) 87-92

Properties of Graphene Side Gate Transistors
B. Hähnlein, B. Händel, F. Schwierz, J. Pezoldt
Mater. Sci. Forum 740-742 (2013) 1028-1031

AlGaN solution growth on 3C-SiC(111)/Si(111) pseudosubstrates
K. Tonisch, R. Benzig, G. Ecke, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 103-106

Kinetic Monte Carlo simulation of impurity effects on nucleation and growth of SiC clusters on Si(100)
M.N. Lubov, J. Pezoldt, Yu.V. Trushin
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 393-396

Properties of Graphene Side Gate Transistors
B. Hähnlein, B. Händel, F. Schwierz, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 1028-1031

AlGaN/GaN based HEMTs on SiC/Si-substrates: Influences on high frequency performance
W. Jatal, K. Tonisch, U. Baumann, F. Schwierz, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 1115-1118

SiC/Si speudosubstrates for AlGaN nanoelectronic devices
L. Hiller, K. Tonisch, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2012 (ECSCRM2012) 740-742 (2013) 1119-1122

AlGaN/GaN three-terminal junction devices for rectification and transistor applications on 3C-SiC/Si pseudosubstrates
L. Hiller, J. Pezoldt
IEEE Trans. Electron Devices 60 (2013) 3047-3052

Verspannungsanalyse mit Raman-Spektroskopie an MEMS aus Gruppe III-Nitriden
J. Pezoldt, B. Hähnlein, M. Stubenrauch, K. Tonisch, R. Grieseler, L. Vanco, P. Schaaf
Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 101 - 106

FTIR-Ellipsometrie an Mischkristallen von Gruppe III-Nitriden
J. Pezoldt, K. Tonisch
Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 107 - 114

Ermittelung mechanischer Eigenschaften neuer Materialien mittels freistehender Balkenstrukturen
R. Grieseler. M. Stubenrauch, S. Michael, J. Klaus, K. Tonisch, J. Pezoldt, P. Schaaf
Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 209 - 210

Die Herstellung haftfester Metallschichten auf PMMA-Oberflächen
Th. Stauden, M. Himmerlich,A. Grewe, S. Krischock
Thüringer Werkstofftag 2013 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 9, Hrsg. P. Schaaf, E. Rädlein, Universitätsverlag Ilmenau, Ilmenau 2013, S. 207 - 208

Growth of cubic GaN on 3C-SiC/Si(001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J.K.N. Lindner J. Cryst
Growth 378 (2013) 291-294

Effective collection and detection of airborne species using SERS-based detection and localized electrodynamic precipation
E.-C. Lin, J. Fang, S.-C. Park, Th. Stauden, J. Pezoldt, H.O. Jacobs
Adv. Mater. 25 (2013) 3554-3559

N-type, conductivity and properties of carbon-doped InN(0001) films grown by molecular beam epitaxy
M. Himmerlich, A. Knübel, R. Aidam, L. Kirste, A. Eisenhardt, S. Krischol, J. Pezoldt, P. Schley, E. Sakalauskas, R. Goldhahn, R. Felix, J.M. Manuel, F.M. Morales, D. Carvalho, T. Ben, R. Garcia, G. Kolbmüller
Appl. Phys. 113 (2013) 033501/1- 033501/10

Device Concepts Using Two_Dimensional Electronic Materials (Graphene, MoS2, etc.)
F. Schwierz, J. Pezoldt
Proc. of the 2012 IEEE 11th Intern. Conf. On Solid-State and Integrated Circuit Technology (ICSIT), (2012) 74-77,  paper S04_02

Multi-Scale Simulation of Nucleation and Growth of Nanoscale SiC on Si
J. Pezoldt, D.V. Kulikov, V.S. Kharlamov, M.N. Lubov, Yu.V. Trushin
Comput. Theor. Nanosci. 9 (2012) 1941-1966

Graphene field effect transistor improvement by graphene-silicon dioxide interface modification
J. Pezoldt, Ch. Hummel, F. Schwierz
Physica E 44 (2012) 985-988

Mechanical properties of cubic SiC, GaN and AlN thin films
J. Pezoldt, R. Grieseler, T. Schupp, D.J. As, P. Schaaf
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 513-516

T- and Y-branched three-terminal junction graphene devices
J. Pezoldt, R. Göckeritz, B. Hähnlein, B. Händel, F. Schwierz
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 683-686

ECR-etching of submicron and nanometer sized 3C-SiC(100) Mesa structures
L. Hiller, Th. Stauden, R. M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 901-904

Side-gate graphene field-effect transistors with high transconductance
B. Hähnlein, B. Händel, J. Pezoldt, H. Töpfer, R. Granzner, F. Schwierz
Appl. Phys. Lett. 101 (2012) 093504-1 - 093504-1

Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems
R. Grieseler, J. Klaus, M. Stubenrauch, K. Tonisch, S. Michael, J. Pezoldt, P. Schaaf
Phil. Mag. 92 (2012) 3392 - 3401

Smooth ceramic titanium nitride contacts on AlNGaN/GaN-heterostructures
C. Maus, T. Stauden, G. Ecke, K. Tonisch and J. Pezoldt
Semicond. Sci. Technol. 27 (2012) 115007

Quantitative evaluation of strain in epitaxial 2H-AlN layers
R. Nader, J. Pezoldt
Adv. Mater. Res. 324 (2011) 213-216 

Vertical design of cubic GaN-based high electron mobility transistors
 
R. Granzner, E. Tschumak, M. Kittler, K. Tonisch, W. Jatal, J. Pezoldt, D.As, F. Schwierz, 
 J. Appl. Phys. 110 (2011) 114501-1 - 114501-8 

Epitaxial graph
ene three-terminal junctions
R. Göckeritz, J. Pezoldt, F. Schwierz
Appl. Phys. Lett. 99 (2011) 173111-1 - 173111-3
 
Polarity control of CVD grown 3C-SiC on Si(111)
J. Pezoldt, B. Schröter
Mater. Sci. Forum, 679-680 (2011), 91-94
 
High temperature graphene formation on capped and uncapped SiC
R. Göckeritz, D. Schmidt, M. Beleites, G. Seifert, S. Krischock, M. Himmerlich, J. Pezoldt
Mater. Sci. Forum, 679-680 (2011), 785-788
 
Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates
R. Nader, J. Pezoldt
Diam. Relat. Mater. 20 (2011) 717-721
 
Defect interactions and polytype transitions
J. Pezoldt, A.A. Kalnin
Adv. Mater. Res. 324 (2011), 217-220
 
Side gate graphene and AlGaN/GaN unipolar devices
R. Göckeritz, K. Tonisch, W. Jatal, L. Hiller, F. Schwierz, J. Pezoldt
Adv. Mater. Res. 324 (2011) 427-430

AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications 
K. Tonisch, W. Jatal, F. Niebelschuetz, H. Romanus, U. Baumann, F. Schwierz, J. Pezoldt 
Thin Solid Films 520 (2011) 491-496 

Black luminescent silicon
J. Pezoldt, T. Kups, M. Stubenrauch, M. Fischer
Phys. Status Solidi C 8 (2011) 1021-1026

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt, T. Stauden, O. Ambacher, and M. A. Hein
Phys. Status Solidi A 208 (2011) 357–376

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications
K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt,T. Stauden, O. Ambacher, and M. A. Hein
Phys. Status Solidi A  (2010) 1–20

FTIR ellipsometry of SiC heterostructures
 
 J. Pezoldt
AIP Conf. Ser. Proc. 1292 (2010) 83-86


Property modification of 3C-SiC MEMS on Ge-modified Si(100) substrates

F. Niebelschütz, W. Zhao, K. Brueckner, K. Tonisch, M. Linß, M.A. Hein,  J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 861-864

Resonant MEMS based on cubic GaN layers
F. Niebelschütz, K. Brückner, W. Jatal, E. Tschumak, D.J. As, M.A. Hein, J. Pezoldt
Phys. Status Solidi C7(2010) 116-119

Silicon nanoresonator
M. Hofer, Th. Stauden, S.A.K. Nomvussi, J. Pezoldt, I.W. Rangelow
Sensor und Messsysteme 2010, Nürnberg, Germany (18. – 19.5.2010), Konferenzbeiträge der 15. ITG-/GMA-Fachtagung “Sensoren und Messsysteme 2010", VDE Verlag GmbH, ISBN 978-3-8007-3260-9,  Berlin, Offenbach, 2010, pages 330 - 333

Cubic AlGaN/GaN Hetero-field effect transitors with normally on and normally off operation
D.J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, and K. Lischka
Mater. Res. Soc. Symp. Proc., III-Nitride Materials for Sensing, Energy Conversion, and Controlled Light-Matter Interactions, 1202 (2010) 1202-I04-08-1 - 1202-I04-08-1

Ambient and temeprature dependent electric properties of backgate graphene transistors
Ch. Hummel, F. Schwierz, A. Hanisch, J. Pezoldt
Phys. Status Solidi B 245 (2010) 903-906

Graphenprozessierung für Transistoren: Materialanalytische Fragestellungen
R. Göckeritz; R. Koch, M. Himmerlich, M. Endlich, Ch. Hummel, M.A. Alsioufy, S. Krischok, J. A. Schaefer, F. Schwierz, J. Pezoldt
Thüringer Werkstofftag 2010 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 2, Hrsg. L. Spiess, E. Rädlein, P. Schaaf, Universitätsverlag Ilmenau, Ilmenau 2010, S. 91 - 98

Grenzflächenmodifikation und Eigenschaften in Heterostrukturen mit großer Gitterfehlpassung
Th. Stauden, K. Tonisch, F. Niebelschütz, P. Masri, J. Pezoldt
Thüringer Werkstofftag 2010 - Wissenschaftliche Beiträge, Schriftenreihe Werkstofftechnik Aktuell Bd. 2, Hrsg. L. Spiess, E. Rädlein, P. Schaaf, Universitätsverlag Ilmenau, Ilmenau 2010, S. 99 - 98

Strucutural characterization of sputterred indium oxide films deposited at room temperature
I. Hotovy, J. Pezoldt, M.Kadlecikova, T. Kups, L. Spiess, J. Breza, E. Sakalauskas, R. Goldhahn, V. Rehacek
Thin Solid Films 518 (2010) 4508 - 4511

Investigation of Ge and C layer deposition on a Si substrate using SIMS profiling
V.S. Kharlamov, D.V. Kulikov, Yu.V. Trushin, P. Nader, P. Masri, Th. Stauden, J. Pezoldt
Bulletin of the Russian Academy of Sciences: Physics, 74  (2010) 241-244

Tuning resuidual stress in 3C-SiC(100) on Si(100)
J. Pezoldt, Th. Stauden, F. Niebelschütz, M.A. Alsioufy, R. Nader, P. Masri
Mater. Sci. Forum, 645-648 (2010) 159-162

Nanostructuring techniques for 3C-SiC(100) NEMS structures
M. Hofer, Th. Stauden, I.W. Rangelow, J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 841-844

Temperature facilated ECR-etching for isotropic SiC structuring
F. Niebelschütz, Th. Stauden, K. Tonisch, J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 849-852

2H-AlGaN/GaN HEMTs on 3C-SIC(111)/Si(111) substrates
K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann, F. Schwierz, J. Pezoldt
Mater. Sci. Forum, 645-648 (2010) 1219-1222

Designing the Si(100) conversion into SiC(100) by Ge
R. Nader, F. Niebelschütz, D.V. Kulikov, V.V. Kharlamov, Yu.V. Trushin, P. Masri, J. Pezoldt
Phys. Status Solidi C 7 (2010) 141-144

Top gated graphene transistors with different gate insulators
J. Pezoldt, Ch. Hummel, A. Hanisch, I. Hotovy, M. Kadlecikova, F. Schwierz,
Phys. Status Solidi C 7 (2010) 390-393

Cubic AlGaN/GaN Hetero-field effect transitors with normally on and normally off operation
D.J. As, E. Tschumak, F. Niebelschütz, W. Jatal, J. Pezoldt, R. Granzner, F. Schwierz, and K. Lischka
Mater. Res. Soc. Symp. Proc., Symposium I: III-Nitride Materials for Sensing, Energy Conversion and Controlled Light-Matter Interaction, vol. 1202 (2010) 1202-I04-08-1 - 1202-I04-08-6

Temperature facilated ECR-etching for isotropic SiC structuring
F. Niebelschütz, Th. Stauden, K. Tonisch, J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 849-852

Property modification of 3C-SiC MEMS on Ge-modified Si(100) substrates
F. Niebelschütz, W. Zhao, K. Brueckner, K. Tonisch, M. Linß, M.A. Hein,  J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 861-864

2H-AlGaN/GaN HEMTs on 3C-SIC(111)/Si(111) substrates
K. Tonisch, W. Jatal, R. Granzner, M. Kittler, U. Baumann, F. Schwierz, J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 1219-1222

Tuning residual stress in 3C-SiC(100) on Si(100)
J. Pezoldt, Th. Stauden, F. Niebelschütz, M.A. Alsioufy, R. Nader, P. Masri
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010)pages 159-162

Nanostructuring techniques for 3C-SiC(100) NEMS structures
M. Hofer, Th. Stauden, I.W. Rangelow, J. Pezoldt
13th International Conference on Silicon Carbide and Related Materials, Nürnberg, Germany (11 – 16. 10.2009), Material Science Forum, 645-648 (2010) pages 841-844

Formation of different carbon phases
J. Pezoldt
Material Sci. Forum,  615-617 (2009) 227-230

SIMS investigation of Gex(4H-SiC)1-x solid solutions synthesized by Ge-ion implantation up to x=0.2
H. Peyre,  J. Pezoldt, M.Voelskow, W.Skorupa, J.Camassel 
Material Sci. Forum,  615-617 (2009) 465-468

Performance modification of SiC MEMS
F. Niebelschuetz, K. Brueckner, V. Cimalla, M.A. Hein,  J. Pezoldt
Material Sci. Forum, 615-617 (2009) 621-624

Comparative study of 3C-GaN grwon on semi-insulating 3C-SiC/Si(100) substrates
E. Tschumak, K.Tonisch, J. Pezoldt, D.J.As 
Material Sci. Forum, 615-617 (2009) 943-946

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing
M. Voelskow, W. Skorupa,  J. Pezoldt, Th. Kups 
Nucl. Instr. Meth. Phys. Res. B 267 (2009) 1269-1272

Nanostructured indium oxide deposited at room temperature
I. Hotovy, T. Kups, M. Predanocy, J. Hotovy , A. Wilke, V. Rehacek, J. Pezoldt, L. Spieß 
Proc. of the 54th International Scientific Colloquium (54. IWK), Technische Universität Ilmenau, September  7th - 10th, 2009, p. 5.2.1 - 5.2.4

Polarity determination and control of SiC grown on Si
J. Pezoldt, Th. Kups, Th. Stauden, B. Schröter
Mater. Sci. Eng. B 165 (2009) 28-33

Properties of surface and interface structure of AlN/3C-SiC/Ge/Si(111)
R. Nader, M. Kazan, Ch. Zgheib, J. Pezoldt, P. Masri 
J. Cryst. Growth 311 (2009) 4665-4669

Nonpolar cubic AlGaN/GaN HFETs grown by MBE on 3C-SiC/Si(001)
E. Tschumak, J. Pezoldt, D.J. As 
15th European Molecular Beam Epitaxy Workshop, March 8th - 11th, Zakopane, Poland, 2009

Graphene transitors - Breakthrough or Ballyhoo?
F. Schwierz, Ch. Hummel,  J. Pezoldt
EMRS Spring Meeting 2009, Symposium N: Carbon Nanotubes and Graphene Low Dimensional Carbon Structures,  June 8th - 12th, Strasbourg, France, (2009)
 
Graphene as FET channel material - What are the benefits?
F. Schwierz, J. Pezoldt
54th International Scientific Colloquium (54. IWK): Information Technology and Electrical Engineering - Devices and Systems, Materials and Technologies for the Future, Technische Universität  Ilmenau, Germany, September  7th - 10th, 2009

Top gated graphene transistors with different gate insulators
 J. Pezoldt, Ch. Hummel, A. Hanisch, I. Hotovy, M. Kadlecikova, F. Schwierz12th International Conference on the Formation of Semiconductor Interfaces: From Semiconductor to Nanoscience and Applications with Biology (ICFSI-12), Weimar, July 5th - 10th, Germany, 2009

Ambient and temperature dependent electric Properties of backgate graphene transistors
Ch. Hummel, F. Schwierz, J. Pezoldt 
EMRS Spring Meeting 2009, Symposium N: Carbon Nanotubes and Graphene Low Dimensional Carbon Structures,  June 8th - 12th, Strasbourg, France, 2009

Carbyne on SiC
J. Pezoldt
EMRS Spring Meeting 2009, Symposium O: Science and Technology of sp2 Carbon allotropes,  June 8th - 12th, Strasbourg, France, 2009

Buckling stabilization and stress reduction in SiC on Si by i-FLASiC processing
A. Andreadou, J. Pezoldt, Ch. Förster , E.K. Polychroniadis, M. Voelskow, W. Skorupa
Material Sci. Forum  600-603 (2009) 239 - 242

SiC polytype stability influenced by Ge impurities
R. Nader , M. Kazan , E. Moussaed, Ch. Zgheib, B. Nsouli, J. Pezoldt , P. Masri
Material Sci. Forum  600-603 (2009) 533 - 536

Structure and lattice location of Ge implanted 4H-SiC
Th. Kups, K. Tonisch, M. Voelskow, W. Skorupa, A.L. Konkin, J. Pezoldt
Material Sci. Forum  600-603 (2009) 623 - 626

Isotropic etching of SiC
Th. Stauden, F. Niebelschütz, K. Tonisch, V. Cimalla, G. Ecke, Ch. Haupt, and J. Pezoldt
Materials Science Forum 600-603 (2009) 651-654

Phase Stabilization and Phonon Properties of Single Crystalline Rhombohedral Indium Oxide
Ch.Y. Wang, Y. Dai, J. Pezoldt, B. Lu , Th. Kups, V. Cimalla, O. Ambacher 
Crystal Growth & Design  8 (2008) 1257-1260

Lattice location determination of Ge in SiC by ALCHEMI
T. Kups, M. Voelskow, W. Skorupa, M. Soueidan, G. Ferro, J. Pezoldt 
Microscopy of Semiconducting Materials 2007; Proceedings of the 15th Conference, April 2nd - 5th, Oxford, 2005, Springer Proceedings in Physics Vol. 120, Eds. Cullins A.G., Midgley P.A.., Springer, Berlin 2007 (not 2008) 353-358

Surface morphology of Ge-modified 3C-SiC/Si films
R. Nader, M. Kazan, E. Moussaed, Th.Stauden, M. Niebelschütz , P. Masri, J. Pezoldt
Surf. Interface Anal.  40 (2008) 1310-1317

SiC polytypes process affected by Ge predeposition on Si(111) substrates
R. Nader, E. Moussaed , M. Kazan, J. Pezoldt, P. Masri
Superlattices and Microstructures  44 (2008) 191-196

Buried melting in germanium implanted silicon by millisecond flash lamp annealing
M. Voelskow, R. Yankow , W. Skorupa, J. Pezoldt, Th. Kups
Appl. Phys. Lett.  93  (2008) 151903-1 - 151903-3

Hydrogenated carbon films preparedby plasma-enhanced chemical vapour deposition
J. Huran , A.P. Kobzev , N.I. Balalykin , J. Pezoldt
ASDAM 2008, Proceedings of the 7th International  Conference on Advanced Semiconductor Devices and Microsystems, Eds. S. Hascik, J. Osvald, Piscataway: IEEE, (2008) 127-130

PECVD silicon nitride thin films: properties
P. Bohacek , J. Huran , A.P. Kobzev , N.I. Balalykin , J. Pezoldt
ASDAM 2008, Proceedings of the 7th International  Conference on Advanced Semiconductor Devices and Microsystems, Eds. S. Hascik, J. Osvald, Piscataway: IEEE (2008) 291-294

Study of Si and C Adatoms and SiC Clusters on the Silicon Surface by The Molecular 
Dynamics Method V.S. Kharlamov , Yu. V. Trushin , E.E. Zhurkin , M.N. Lubov, J. Pezoldt
Technical Physics  53 (2008) 1490-1503

Nanomechanics of Single Crystalline Tungsten Nanowires
V. Cimalla, C.-C. Röhlig, J. Pezoldt, M. Niebelschütz, O. Ambacher, K. Brückner, M. Hein, J. Weber, S. Milenkovic, A. J. Smith, A. W. Hassel
Journal of Nanomaterials 2008 (2008) 638947 doi:10.1155/2008/638947

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process
J. Pezoldt, R. Nader, Ch. Zgheib, G. Ecke, R. Pieterwas, Th. Stauden, Th. Wöhner and P. Masri
Surf. Interface Anal. 40 (2008) 794-797

Stress and stress monitoring in SiC–Si heterostructures
J. Pezoldt, R. Nader, F. Niebelschütz, V. Cimalla, T. Stauden, Ch. Zgheib and P. Masri
phys. stat. sol. (a) 205 (2008) 867-871

Wide band gap amorphous silicon carbide films deposited by PECVD
J. Huran, I. Hotovy, J.Pezoldt, N.I. Balalykin, A.P. Kobzev
In: Light Sources 2007; Proceedings of the 11th International Symposium on the Science and Technology of Light Sources (ISBN 978-0-9555445-0-7), Ed. Liu M.Q.,  Fudan University, Shanghai, China, May 20th - 24th (2007) 61-62

Ion beam synthesis of 4H-(Si1-xC1-y)Gex+y solid solutions
J. Pezoldt , Th.Kups , M.Voelskow , W.Skorupa
phys. stat. sol. (a) 204 (2007) 998 - 1101

Local control of SiC polytypes
J.Pezoldt , F.M.Morales , A.A.Kalnin
phys. stat. sol. (a) 204 (2007) 1056 - 1062

Nanomechanics with nanowires and nano-electro-mechanical systems
V. Cimalla, K. Brückner, A.W. Hassel, S. Milenkovic, M.A. Hein, F. Niebelschütz, M. Niebelschütz, J. Pezoldt, H. Romanus, C.-C. Röhlig, K. Tonisch, J. Weber, and O. Ambacher
Proc. Intern Workshop Nanostruct. Thin Films (NANOHARD 2007) May 13-16 2007, Velingrad, Bulgaria (Eds. R. Kakanakov and L. Kolaklieva), 2007, p. 27-48.

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V. Cimalla, J. Pezoldt and O. Ambacher
J. Phys. D: Appl. Phys. 40 (2007) 6386–6434

Nanoelectromechanical devices for sensing applications
V. Cimalla, F. Niebelschütz, K. Tonisch, Ch. Foerster, K. Brueckner, I. Cimalla, T. Friedrich, J. Pezoldt, R. Stephan, M. Hein, O. Ambacher
Sens. Actuat. B 126 (2007) 24-34

Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition
Ch. Y. Wang, V. Cimalla, T. Kups, C. Röhlig, H. Romanus, V. Lebedev, J. Pezoldt, T. Stauden, O. Ambacher
J. Appl. Phys. 102 (2007) 044310 (also: Virtual Journal of Nanoscale Science & Technology 16 (2007) Issue 11)

Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si
J. Pezoldt, Ch. Förster, Th. Stauden, V. Cimalla F. M. Morales, C. Zgheib, P. Masri, and O. Ambacher
Mater. Sci. For. 556-557 (2007) 203-206

FTIR Ellipsometry Analysis of the Internal Stress in SiC/Si MEMS
J. Pezoldt, Ch. Förster, V. Cimalla, F. Will, R. Stephan, K. Brückner, M. Hein, and O. Ambacher
Mater. Sci. For. 556-557 (2007) 283-266

Improvement of 4H-SiC selective epitaxial growth by VLS mechanism using Al and Ge based melts
M. Soueidan, G. Ferro, C. Jaquier, P. Godignon, J. Pezoldt, M. Lazar, B. Nsouli, Y. Monteil
Diam. Relat. Mater. 16 (2007) 37-45

RF plasma deposition of thin amorphous silicon carbide films using a combination of silan and methane
J. Huran, I. Hotovy, J. Pezoldt, N.I. Balalykin, Kobzev A.P.
In: ASDAM 2006, Proceedings of the 6th International  Conference on Advanced Semiconductor Devices and Microsystems (ISBN 1-4244-0396-0), Eds. J. Breza et al., Piscataway: IEEE (2006)  59-62

Untersuchung der Fluiddynamik in RTCVD Epitaxiereaktoren
Yu. P. Rainova, J. Pezoldt, A. Schenk, I. S. Tchulkov
In: Technologie der Mikroelektronik, Optoelektronik und Glasfaseroptik, Ed. Korkischko Yu. N., Moskau, 2006, MIET, p.214 - 233

Low Energy Ion Modification of 3C-SiC Surfaces
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, and J. Pezoldt
Silicon Carbide and Related Materials 2005 (ICSCRM 2005), Mater. Sci. Forum 527-529, (2006) 685–688

Fermi level analysis of group III nitride semiconductor device structures by Auger peak position measurements
G. Ecke, M. Niebelschütz, R. Kosiba, U. Rossow, V. Cimalla, J. Liday, P. Vogrincic, J. Pezoldt, V. Lebedev, and O. Ambacher
J. Electr. Engin. 57 (2006) 354-359

5µm thick 3C-SiC layers grown on Ge-modified Si(100) substrates
Ch. Zgheib, E. Nassar, M. Hamad, R. Nader, P. Masri, J. Pezoldt, G. Ferro
Superlattices Microstruct. 40 (2006) 638-643

Determination of strain and composition in SiC/Si and AlN/Si heterostructures by FTIR-ellipsometry
J. Pezoldt, Ch. Zgheib, V. Lebedev, P. Masri, O. Ambacher
Superlattices Microstruct. 40 (2006) 612-618

Effect of deposition temperature on the properties of amorphous silicon carbide thin films
J. Huran, I. Hotovy, J. Pezoldt, N.I. Balalykin, A.P. Kobzev
Thin solid Films, 515 (2006) 651-653

Carbon surface diffusion and Sic nanocluster self-ordering
J. Pezoldt, Yu.V. Trushin, V.S. Kharlamov, A.A. Schmidt, V. Cimalla, O. Ambacher
Nucl. Instr. Meth. Phys. Res. B 253 (2006) 241-245

Simulation of quality of SiC/Si interface during MBE deposition of C on Si
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, Yu. V. Trushin, J. Pezoldt
Mat. wiss. Werkst. techn. 37 (2006) 929

Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V. Lebedev, V. Cimalla, J. Pezoldt, M. Himmerlich, S. Krischok, J.A. Schäfer, and O. Ambacher
J. Appl. Phys. 100 (2006) 094902

Simulation of quality of SiC/Si interface during MBE deposition of C on Si
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, J. Pezoldt, Yu.V. Trushin
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, September 11 – 15, (2006) 307

Hetereopolytype and low dimensional structures in SiC
J. Pezoldt
51st Internationales Wissenschaftliches Kolloquium Technische Universität Ilmenau, September 11 – 15, (2006) 263

Self organization and properties of Black Silicon
M. Fischer, M. Stubenrauch, Th. Kups, H. Romanus, F.M. Morales, G. Ecke, M. Hoffmann, C. Knedlik, O. Ambacher and J. Pezoldt
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, September 11 – 15, (2006) 237

Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
G. Ferro, M. Soueidan, C. Jacquier, P. Godignon, Th. Stauden, J. Pezoldt, M. Lazar, J. Montserrat, Y. Monteil
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 275 - 279

PECVD silicon carbide deposited at different temperature
J. Huran, B. Zatko, I. Hotovy, J. Pezoldt, A.B. Kobzev, N.I. Balalykin
Czech. J. Phys. 56 B (2006) B1207 - B1211

Simulation of quality of SiC/Si interface during MBE deposition of C on Si
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, J. Pezoldt, Yu.V. Trushin
p. 5-0-13-1 - 5-0-13-9, In:51. Internationales Wissenschaftliches Kolloquiums, Technische Universität Ilmenau, 11. - 15.09.2006, 2006, DVD.

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities
J. Pezoldt, F.M. Morales, Ch.Zgheib, Ch.Förster, Th.Stauden, G.Ecke, Ch.Wang, P. Masri
Surf. Interface Anal. 38 (2006) 444 - 447

Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
G. Ferro, M. Soueidan, C. Jacquier, P. Godignon, Th. Stauden, J. Pezoldt, M. Lazar, J. Montserrat, Y. Monteil
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 275 - 279

Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
J. Pezoldt, F.M. Morales, Th. Stauden, Ch. Förster, E. Polychroniadis, J. Stoemenos, D. Panknin, W. Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 295 - 298

Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
A.A. Schmidt, Yu.V. Trushin, K.L. Safonov, V.S. Kharlamov, D.V. Kulikov, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 315 - 318

Low Energy Ion Modification of 3C-SiC Surfaces
Ch. Förster, R. Kosiba, G. Ecke, V. Cimalla, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 685 - 688

High Dose High Temperature Ion Implantation of Ge into 4H-SiC
Th. Kups, P. Weih, M. Voelskow, W. Skorupa, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 851 - 854

Micromachining of Novel SiC on Si Structures for Device and Sensor Applications
Ch. Foerster, V. Cimalla, M. Stubenrauch, C. Rockstuhl, K. Brueckner, M. Hein, J. Pezoldt, O. Ambacher
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 1111 - 1114

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC
J. Pezoldt, Th. Kups, P. Weih, Th. Stauden, O. Ambacher
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 1559 - 1562

Group III-nitride and SiC based micro- and nanoelectromechanical resonators for sensor applications
Ch. Förster, V. Cimalla, V. Lebedev, J. Pezoldt, K. Brückner, R. Stephan, M. Hein, E. Aperithitis, and O. Ambacher
phys. stat. sol. (a) 203 (2006) 1829-1833

Phase selective growth and properties of rhombohedral and cubic indium oxide
Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, G. Ecke, Th. Stauden, M. Ali, V. Lebedev, J. Pezoldt, and O. Ambacher
Appl. Phys. Lett. 89 (2006) 011904

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)
Ch. Zgheib, L.E. Mc Neil, P. Masri, Ch. Förster, F.M. Morales, Th. Stauden, O. Ambacher, and J. Pezoldt
Appl. Phys. Lett. 88 (2006) 211909

Beta to alpha transition and defects on SiC on Si grown by CVD
F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
In: Microscopy of Semiconducting Materials; Proceedings of the 14th Conference, April 11th - 14th, Oxford, 2005, Springer Proceedings in Physics Vol. 107, Eds. Cullins A.G., Hutchison J.L., Springer, Berlin 2005, p.131-134

Strain relaxation and void reduction in SiC on Si by Ge predeposition
F.M. Morales, P.Weih, Ch. Wang, Th. Stauden, O. Ambacher , J. Pezoldt
In: Microscopy of Semiconducting Materials; Proceedings of the 14th Conference, April 11th - 14th, Oxford, 2005, Springer Proceedings in Physics Vol. 107, Eds. Cullins A.G., Hutchison J.L., Springer, Berlin 2005, p.135-138

Silicon carbide nanoheteropolytypic structures grown by UHV-CVD on Si(111)
F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
Electrochem. Soc. Proc. 2005-09 (2005) 699 - 706

Stress manipulation in CVD grown SiC on Si mono- and submonolayer Ge precoverages
J. Pezoldt, Ch. Zgheib, F.M. Morales, Ch. Förster, Th. Stauden, Ch. Wang, P. Masri, A. Leycuras, G. Ferro, O. Ambacher
Electrochem. Soc. Proc. 2005-09 (2005) 707 - 714

Stress design in 3C-SiC/Si heteroepitaxial systems
J.Pezoldt,Ch. Zgheib, Ch. Förster, F.M. Morales, G. Cherkachinin, Ch.Wang, A.Leycuras, G. Ferro, Y. Monteil, I. Cimalla, O. Ambacher, P.Masri
Wissenschaftlich-Technische Berichte des Forschungszentrums Rossendorf, FZR-433 (2005) 20 - 26

Fabrication of 3C-SiC/Si MEMS and NEMS for sensor applications
Ch. Förster, V. Cimalla, E. Aperathitis, K. Brückner, R. Stephan, M. Hein, J. Pezoldt, O. Ambacher
Wissenschaftlich-Technische Berichte des Forschungszentrums Rossendorf, FZR-433 (2005) 44 - 49

Luminescence of ZnO thin films grown by pulsed laser deposition on 3C-SiC buffered Si
M.Lorenz, H. Hochmuth, A. Jammoul, G. Ferro, Ch. Förster, J. Pezoldt, J.Perez, G. Benndorf, J. Lenzner, R. Schmidt-Grund, M. Grundmann
Wissenschaftlich-Technische Berichte des Forschungszentrums Rossendorf, FZR-433 (2005) 74 - 82

a-SiC - ß-SiC heteropolytype structures on Si(111)
F.M. Morales, Ch. Förster, O. Ambacher, J. Pezoldt
Appl. Phys. Lett. 87 (2005) 201910-1 - 201910-3.

Micro-electromechanical system based on 3C-SiC/Si heterostructures
Ch. Förster, V. Cimalla, K. Brückner, M. Hein, J. Pezoldt and O. Ambacher
Mater. Sci. Eng. C 25 (2005) 804-808

Raman studies of Ge-promoted stress modulation in 3C-SiC grown on Si(111)
Ch. Zgheib, L.E. McNeil, M. Kazan, P Masri. F.M., Morales O. Ambacher, J. Pezoldt
Appl. Phys. Lett. 87 (2005) 041905

Molecular dynamics study of diffusion barriers of Si and C adatoms on Si surfaces
V.S. Kharlamov, M.N. Lubov, J. Pezoldt, Yu.V Trushin., E.E. Zhurkin
Proc. of SPIE, Eighth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 02), 5831 (2005) 51-55.

Polytype control and properties of AlN on silicon
V. Cimalla, V. Lebedev, U. Kaiser, R. Goldhahn, Ch. Förster, J. Pezoldt, O. Ambacher
phys. stat. sol. (c) 2 (2005), 2199-2203.

Effect of Ge in corporation on stoichiometric composition of 3C-SiC thin films grown on Si(111) substrates
Ch. Zgheib, M. Kazan, P. Weih, O. Ambacher, P. Masri, J. Pezoldt
phys. stat. sol. (c) 2 (2005), 1284-1287.

Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions
P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zgheib, M. Voelskow, W. Skorupa, O. Ambacher, J Pezoldt
phys. stat. sol. (a) 202 (2005), 545-549.

Growth of three-dimensional SiC clusters on Si modelled by KMC
A.A. Schmidt, V.S. Kharlamov, K.L. Safonov, Yu.V. Trushin, E.E. Zhurkin, V. Cimalla, O. Ambacher, J. Pezoldt
Comput. Mater. Sci. 33 (2005) 375-381.

Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si(111)
V. Lebedev, V. Cimalla, U. Kaiser, Ch. Förster, J. Pezoldt, J. Biskupek, and O. Ambacher
J. Appl. Phys. 97 (2005) 114306.

Computer simulation of the early stages of nano scale SiC growth on Si
K.L. Safonov, Yu.V. Trushin, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004),
483-485 (2005) 169-172.

Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy
P. Weih, H. Romanus, Th. Stauden, L. Spieß, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 173-176.

Low temperature chemical vapor deposition of 3C-SiC on Si substratesCh. Förster, V. Cimalla, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 201–204.

Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennegues, A. Leycuras, D. Panknin, J. Stoemenos, W.Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 213–216.

Infrared Gratings Based on SiC/Si-Heterostructures
C. Rockstuhl, H.P. Herzig, Ch. Förster, A. Leycuras, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 433- 436.

Growth of non-polar a-plane and cubic InN on r-plane sapphire by molecular beam epitaxy
H. Lu, W.J. Schaff, L.F. Eastman, V. Cimalla, J, Pezoldt, O. Ambacher, J. Wu, and W. Walukiewicz
MRS Symp. Proc. 798 (2004) Y12.6.

Untersuchung der Anfangsstadien des Wachstums von SiC Nanoclustern auf Siliziumsubstraten
Yu.V. Trushin, E.E. Zhurkin, K.L. Safonov, A.A. Schmidt, V.S. Kharlamov, S.A. Korolyov, M.N. Lubov, J. Pezoldt,
Pizma v Zh. Techn. Fiz. 30 (2004) (15) 48-54 (russ.).

Initial stages of the MBE growth of silicon carbide nanoclusters on a silicon substrate
Tech. Phys. Lett. 30 (2004) 641-643 (engl.).

SIMS investigations of the influence of Ge pre-deposition on the interface quality between SiC and Si
J. Pezoldt, Ch. Zgheib, P. Masri, M. Averous, F.M Morales , R. Kosiba, G. Ecke, P. Weih, O. Ambacher
Surf. Interface Anal. 36 (2004) 969-972.

Linear alignement of SiC dots on silicon substrates
V. Cimalla, A.A. Schmidt, Th. Stauden, K. Zekentes, O. Ambacher, J. Pezoldt
J. Vac. Sci. Technol. B22 (2004) L20-L24.

Self organized SiC nanostructures on silicon
V. Cimalla, A.A. Schmidt, Ch. Förster, O. Ambacher, K. Zekentes, J. Pezoldt
Superlattices Microstruct. 36 (2004) 345-351.

Cubic InN on r-plane sapphire
V. Cimalla, U. Kaiser, I. Cimalla, G. Ecke, J. Pezoldt, L. Spiess, O. Ambacher
Superlattices Microstruct. 36 (2004) 487-495.

The role of Ge predeposition temperature in the epitaxy of SiC on Silicon
F.M.Morales, Ch. Zgheib, S.I. Molina, D. Araujo, R. Garcia, C. Fernandez,A. Sanz-Hervas, P. Masri, P. Weih, Th. Stauden, V. Cimalla, O. Ambacher and J. Pezoldt
phys. stat. sol. (c) 1 (2004) 341.

Lateral alignment of SiC dots on silicon substrates
V. Cimalla, J. Pezoldt, Th. Stauden, Ch. Förster, and O. Ambacher
phys. stat. sol. (c) 1 (2004) 337.

3C-SiC:Ge alloy grown on Si(111) substrates by SSMBE
P.Weih, V. Cimalla, Th. Stauden, R. Kosiba, G. Ecke, L. Spiess, H.Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt
phys. stat. sol. (c) 1 (2004) 347.

Kinetic Monte Carlo simulations of SiC nucleation on Si(111)
A.A. Schmidt, K.L. Safonov, Yu.V. Trushin, V. Cimalla, O. Ambacher, J. Pezoldt
phys. stat. sol. (a) 201 (2004) 333.

Flash lamp supported deposition of 3C-SiC (FLASiC) – a promising technique to produce high quality cubic SiC layers
W.Skorupa, D. Panknin, W. Anwand, M. Voelskow, G. Ferro, Y. Monteil, A.Leycuras, J. Pezoldt, R. McMahon, M. Smith, J. Camassel, J. Stoemenos, E. Polychroniadis, P. Godignon, N. Mestres, D. Turover, S. Rushworth, A. Friedberger
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 175.

Structure and composition of 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE
P.Weih, V. Cimalla, Th. Stauden, R. Kosiba, L. Spieß, H. Romanus, M.Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 293.

Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
F.M.Morales,Ch. Zgheib, S.I. Molina, D. Araújo, R. García, C. Fernández, A.Sanz-Hervás, P. Masri , P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 297.

Stress control in 3C-SiC films grown on Si(111)
Ch. Zgheib, P. Masri, P. Weih, O. Ambacher, J. Pezoldt
Mater. Sci. Forum Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 301.

Etching of SiC with fluorine ECR plasma
Ch. Förster, V. Cimalla, R. Kosiba, G. Ecke, P. Weih, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 821.

Formation of 3C-SiC films embedded in SiO2 by sacrificial oxidation
D. Panknin, P. Godignon, N. Mestres, E. Polychroniadis, J. Stoemenos, G. Ferro, J. Pezoldt, W. Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 1515.

Infrarotellipsometrie - ein Verfahren für die Materialcharakterisierung
J. Pezoldt, Ch. Wang
Thüringer Werkstofftag 2004 – Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd. 18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik, Verlag Dr. Köster, Berlin 2004, 159.

Strukturselektion in multivariablen Kristallen
J. Pezoldt, A.A. Kalnin
Thüringer Werkstofftag 2004 - Vorträege und Poster, SchriftenreiheWerkstoffwissenschaften Bd. 18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik, Verlag Dr. Köster, Berlin 2004, 167.

Ionenstrahlätzen von Siliziumkarbid
Ch. Förster, V. Cimalla, J. Pezoldt, G. Ecke, O. Ambacher
Thüringer Werkstofftag 2004 - Vorträege und Poster, Schriftenreihe Werkstoffwissenschaften Bd. 18, Hrsg. L. Spiess, H. Kern, Ch. Knedlik,Verlag Dr. Köster, Berlin 2004, 185.

Infrared ellipsometry of SiC/Si heterostructures with Ge modified interfaces
Ch. Zgheib, Ch. Förster, P. Weih, V. Cimalla, M. Kazan, P. Masri, O. Ambacher, J. Pezoldt
Thin Solid Films 455-456 (2004) 183.

In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
Ch. Förster, F. Schnabel, P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Thin Solid Films 455-456 (2004) 695.

Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
F. M. Morales, S. I. Molina, D. Arauj, V. Cimalla, J. Pezoldt, L. Barbadillo, M. J. Hernandez, J. Piqueras
phys. stat. sol. (a)195 (2003) 116.

High resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates
P. Weih, V. Cimalla, Ch. Förster, J. Pezoldt, Th. Stauden, L. Spieß, H. Romanus, M. Hermann, M. Eikhoff, P. Masri, O. Ambacher
Materials Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 233.

Comparative TEM investigations of MBE and RTCVD conversion of Si into SiC
F. M. Morales, S. I. Molina, D. Araujo, V. Cimalla, J. Pezoldt
Materials Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 285.

Modelling the formation of nano-sized SiC on Si
K. L. Safonov, A. A. Schmidt, Yu V. Trushin, D. V. Kulikov, J. Pezoldt
Materials Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 591.

Structural study of GaN layers grown on carbonized Si(111) substrates
F.M. Morales, A. Ponce, S. I. Molina, D. Saraujo, R. Garcia, J. Ristic,M. A. Sanchez-Garcia, E. Calleja, V. Cimalla, J. Pezoldt
Materials Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 1003.

SiC voids, mosaic microstructure and dislocation distribution in Si carbonized layers
F. M. Morales, S. I. Molina, D. Raujo, R. Garca, V. Cimalla, J. Pezoldt
Diam. Relat. Mater. 12 (2003) 1227.

The transistion from 2D to 3D nanoclusters of silicon carbide on silicon
Yu V. Trushin, K L. Safonov, O. Ambacher, J. Pezoldt
Techn. Phys. Lett., 29 (2003) (8) 663.
Pizma v Zh. Techn. Fiz., 29 (2003) (16) 11.

Influence of the growth temperature on SiC nanocluster nucleation on Si(111) surface during MBE process
K. L. Safonov, D. V. Kulikov, Yu V. Trushin, J. Pezoldt
Proc.of SPIE, Sixth International Workshop on NondestructiveTesting and Computer Simulations in Science and Engineering (HI-TECH 02), 5127(2003) 128.

Growth of cubic InN on r-plane sapphire
V. Cimalla, J. Pezoldt, G. Ecke, R. Kosiba, O. Ambacher, L. Spieß, G. Teichert, H. L., W. J. Schaff
Appl. Phys. Lett. 83 (2003) 3468.

Transmission electron microscopy study of ultra-thin SiC layers obtained by rapid thermal carbonization of Si wafers
F. M. Morales, S. I. Molina, D. Arauj, V. Cimalla, J. Pezoldt, L. Barbadillo, M. J. Hernandez, J. Piqueras
phys. stat. sol. (a) 195 (2003) 116.

The estimation of sputtering yields for SiC and Si
G. Ecke, R. Kosiba, V. Kharlamov, Y. Trushin and J. Pezoldt
Nucl. Instrum. Methods Phys. Res. B 196 (2002) 39.

Critical island size of the SiC formation on Si (100) and Si (111)
F. Scharmann, W. Attenberger, J. K. N. Lindner and J. Pezoldt,
Mater. Sci. Eng. B 89 (2002) 201.

Nucleation of SiC on Si and their relationship to nano-dot formation: I. Experimental Investigations
F. Scharmann, J. Pezoldt,
Proc.of SPIE, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 01), 4627(2002) 160.

Nucleation of SiC on Si and their relationship to nano-dot formation: II Theoretical investigation
K. L. Safonov, D. V. Kulikov, Yu V. Trushin, J. Pezoldt,
Proc.of SPIE, Fifth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 01), 4637(2002) 165.

Electrical characterization of SiC/Si heterostructures with modified interfaces
Ch. Förster, P. Masri and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 355.

Physics of Heteroepitaxy and Heterophases
P. Masri, J. Pezoldt, M. Sumiya and M. Averous,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 379.

A Tool for Structural Investigations of Thin Polytypic SiC Layers
F. Scharmann and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 463.

In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)
P. Weih, Th. Stauden and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 725.

Optimization of Interface and Interphase Systems: The Case of SiC and III-V Nitrides
P. Masri, J. Pezoldt, M. Sumiya and M. Averous,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 733.

Silicon Carbide Buffer Layers for Nitride Growth on Si
P. Masri, Z. Herro, Th. Stauden, J. Pezoldt and M. Sumiya,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 1485.

Preparation of Epitaxial Templates for Molecular Beam Epitaxy of III-Nitrides on Silicon Substrates
V. Lebedev, J. Pezoldt, V. Cimalla, J. Jinschek, F. M. Morales, and O. Ambacher
phys. stat. sol. (c) 0 (2002) 183.

Theoretical Evalution of the Interface Modification for Aluminium Nitride Growth on Si
P. Masri, V. Cimalla, J. Pezoldt, J. Camassel, B. Gil, and M. Averous
phys. stat. sol. (c) 0 (2002) 355.

Carbonization induced change of polarity for MBE grown 3C-SiC/Si(111)
J. Pezoldt, B. Schröter, V. Cimalla, Th. Stauden, R. Goldhahn, and L. Spieß,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2000 (ECSCRM 2000), 353-356 (2001) 179.

The influnece of Ge on the SiC nucleation on (111)Si surfaces
J. Pezoldt, T. Wöhner, Th. Stauden, J. A. Schaefer, and P. Masri,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2000 (ECSCRM 2000), 353-356 (2001) 183.

In situ RHEED studies on the influence of Ge on the early stages of SiC on Si(111) and (100) surfaces
V. Cimalla, K. Zekentes, K. Tsagaraki, Th. Stauden, F. Scharmann, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2000 (ECSCRM 2000), 353-356 (2001) 187.

Evaluation of carbon surface diffusion on silicon by using surface phase transition
F. Scharmann, P. Maslarski, D. Lehmkuhl, Th. Stauden, and J. Pezoldt,
Proc.of SPIE, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 00), 4348(2001) 173.

Al+ and N+ implantation in silicon carbide: a role of point defect clusters in defect evolution
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, and J. Pezoldt,
Proc.of SPIE, Fourth International Workshop on Nondestructive Testing and Computer imulations in Science and Engineering (HI-TECH 00), 4348(2001) 257.

Theoretical and experimental investigationsof the defect evolution in silicon carbide during N and Al ionimplantation taking into account internal stress fields
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, F. Scharmann, and J. Pezoldt,
Nucl. Instrum. Methods Phys. Res. B 178 (2001) 269.

The influence of surface preparation on the properties of SiC on Si(111)
J. Pezoldt, B. Schröter, V. Cimalla, and P. Masri,
phys. stat. sol. (a) 185 (2001) 159.

Characterization of SiC grown on Ge modified silicon substrates
J. Pezoldt, Th. Stauden, Ch. Förster, and P. Masri,
Mater. Res. Soc. Symp. Proc. 640 (2001) H5.7.1.

Structural and elasticity-based properties of SiC-based interfaces: their relevance to the heteroepitaxy of III-V nitrides
Averous M.,P. Masri, M. Rouhani Laridjani, Th. Stauden, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc. 639 (2001) G3.49.1:

Carbon-induced reconstruction on Si(111) investigated by RHEED and molecular dynamics
C. Koitzsch, D. Conrad, K. Scheerschmidt, F. Scharmann, P. Maslarski, and J. Pezoldt,
Appl. Surf. Sci. 179 (2001) 49.

Elasticity based approach of interfaces: application to heteroepitaxy and hetero-systems
M. Averous, P. Masri, Th. Stauden, and J. Pezoldt,
phys. stat. sol. (a) 187 (2001) 439.

Electrical characterization of SiC/Si heterostructures with Ge modified interfaces
J. Pezoldt, Ch. Förster, P. Weih and P. Masri,
Appl. Surf. Sci. 184 (2001) 80.

(AlN)1-x(SiC)x buried layers implanted in 6H-SiC: A theoretical study of their optimized compostion
P. Masri, M. Rouhani Laridjani, J. Pezoldt, W. Skorupa, R. A. Yankov and M. Averous,
Appl. Surf. Sci. 184 (2001) 384.

Growth of SiC Nanoclusters on Si surface using molecular beam epitaxy, In: Modern condensed matter physics: experimental methods and devices, related topics
D. V. Kulikov, K. L. Safonov, Yu. V. Trushin, and J. Pezoldt,
Proc. of the 4th Moscow Intern. ITEP School of Physics, ED. A. L. Suvorov, Yu. G. Abov, V. G. Firsov, Akademprint, 2001, 299.

Photothermal measurements of Al+ and Al+/N+ implanted 6H-SiC, Proc. of SPIE
J. Pezoldt, G. Teichert, D. Panknin, and M. Voelskov,
Proc. of SPIE, Third International Workshop on Nondestructive Testing and
Computer Simulations in Science and Engineering (HI-TECH 99), 4064 (2000) 276.

Auger depth profiling of thin SiC layers - practical aspects for a better understanding of quantitative analysis
R. Pieterwas, R. Kosiba, G. Ecke, J. Pezoldt, and H. Rößler,
Proc.of SPIE, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99), 4064(2000) 281.

Real time spectroscopic ellipsometrymonitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces
T. Wöhner, V. Cimalla, Th. Stauden, J. A. Schaefer, and J. Pezoldt,
Thin Solid Films 364 (2000) 28.

The influence of the implantation sequence on the (SiC)1-x(AlN)x formation
J. Pezoldt, P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, M. Voelskov, and U. Kreissig,
Nucl. Instrum. Methods Phys. Res. B 166 (2000) 761.

In situ monitoring of the effect of Ge on the SiC growth on Si surfaces
T. Wöhner, Th. Stauden, J. A. Schaefer, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999 (ICSCRM 1999), 338-342 (2000) 281.

Structural investigations of the nucleation and growth of SiC during rapid thermal conversion of (111)Si
V. Cimalla, W. Attenberger, J. K. N. Lindner, B. Stritzker, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999 (ICSCRM 1999), 338-342 (2000) 285.

The influence of foreign atoms on the the early stages of SiC growth on (111)Si
J. Pezoldt, P. Masri, M. Roughani Laridjani, P. Falgayrettes, M. Averous, T. Wöhner, Th. Stauden, G. Ecke, and R. Pieterwas,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999 (ICSCRM 1999), 338-342 (2000) 289.

The diffusion coefficient of silicon in thin SiC layers as a criterion for the quality of the grown layers
V. Cimalla, Th. Wöhner, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999 (ICSCRM 1999), 338-342 (2000) 321.

Optimization of 3C-SiC/Si heterointerfaces in epitaxial growth
P. Masri, M. Rouhani Lourdjani, T. Wöhner, J. Pezoldt, and M. Averous,
Comp. Mater. Sci. 17 (2000) 544.

Optimization and Control of gas flows in a RTCVD Reactor
P. Rainova, K. I. Antonenko, A. Barchotkin, and J. Pezoldt,
Electrochem. Soc. Proc., Rapid Thermal and other Short-Time Processing Technologies I, 2000 (2000) 393.

Investigation of the nucleation and growth of SiC nanostructures on Si
F. Scharmann, P. Maslarski, Th. Stauden, W. Attenberger, J. K. N. Lindner, B. Stritzker, and J. Pezoldt,
Thin Solid Films 380 (2000) 92.

Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H. Romanus, V. Cimalla, J. A. Schaefer, L. Spieß, G. Ecke, and J. Pezoldt,
Thin Solid Films 359 (2000) 146.

Influence of internal stress fields due to point defect clusters on interstitial diffusion in SiC under irradiation
P. V. Rybin, D. V. Kulikov, V. Trushin, J. Pezoldt, and R. A. Yankov,
Proc.of SPIE, Third International Workschop Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 99), 4064(2000) 301.

Cubic GaN epilayers grown by molecular beam epitaxy on thin ß-SiC/Si(001) substrates
D. J. As, T. Frey, D. Schikora, K. Lischka, V. Cimalla, J. Pezoldt, R. Goldhahn, S. Kaiser, and W. Gebhardt,
Appl. Phys. Lett. 76 (2000) 1686.

A novel (SiC)1-x(AlN)x compound synthesized using ion beams
J. Pezoldt, R. A. Yankov, A. Mücklich, W. Fukarek, M. Voelskow, H. Reuther, and W. Skorupa,
Nucl. Instrum. Methods Phys. Res. B 147 (1999) 273.

Modelling high-temperature co-implantation of N+ and Al+ ions in silicon carbide: the effect of stress on the implant and damage distributions
P. V. Rybin, D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, G. Ecke,
W. Fukarek, W. Skorupa, and J. Pezoldt,
Nucl. Instrum. Methods Phys. Res. B 147 (1999) 279.

Structural and compositional characterization of 6H-SiC implanted with N+ and Al+ ions using optical methods
J. Pezoldt, R. A. Yankov, T. Werninghaus, D. R. T. Zahn, W. Fukarek, G. Teichert, M. Luebbe, and W. Skorupa,
Diam. Relat. Mater. 8 (1999) 346.

Theoretical and experimental studies of (SiC)1-x(AlN)x layer structures formed by N+ and Al+ co-implantation in 6H-SiC
D. V. Kulikov, J. Pezoldt, P. V. Rybin, W. Skorupa, V. Trushin, and R. A. Yankov,
Proc.of SPIE, International Workshop on Nondestructive Testing and Computersimulations in Materials Science and Engineering (HI-TECH
98)3687 (1999) 254.

Thermal wave analysis: A tool for non-invasive testing in ion beam synthesis of wide band gap materials
G. Teichert, L. Schleicher, Ch. Knedlik, M. Voelskow, W. Skorupa, R. A. Yankov, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc. 540 (1999) 103.

Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon
J. Scheiner, R. Goldhahn, V. Cimalla, G. Ecke, W. Attenberger, J. K. N. Lindner, G. Gobsch, and J. Pezoldt,
Mater. Sci. Eng., B 61 (1999) 526.

Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si
W. Attenberger, K. K. N. Lindner, V. Cimalla, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 544.

Influence of the heating ramp on the heteroepitaxial growth of SiC on Si
V. Cimalla, Th. Stauden, G. Eichhorn, and J. Pezoldt,
Mater. Sci. Eng., B 61 (1999) 553.

In situ spectroscopic ellipsometry studies of the interaction process of ethene with Si surfaces during SiC formation
T. Wöhner, Th. Stauden, V. Cimalla, G. Eichhorn, J. A. Schaefer, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc. 569 (1999) 95.

The influence of ion beam sputtering on the composition of the near surface region of silicon carbide layers
G. Ecke, R. Kosiba, J. Pezoldt, and H. Rößler,
Fresenius J. Anal. Chem. 365 (1999) 195.

On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces
P. Masri, N. Moreaud, M. Averous, Th. Stauden, T. Wöhner, and J. Pezoldt,
Mater.Res. Soc. Symp. Proc., Wide-Bandgap Semiconductors for High-Power,High-Frequency and High-Temperature Applications-1999, 572 (1999) 213.

Computer simulation and RBS/C studies of high dose N+ and Al+ co-implantation in 6H-SiC
V. S. Kharlamov, D. V. Kulikov, Yu. V. Truschin, D. N. Tsigankov,
R. A. Yankov, M. Voelskow, W. Skorupa, and J. Pezoldt,
Proc.of SPIE, International Workshop on new Approaches to High-TechMaterials:Nondestructive Testing and Computersimulations in Materials Science and Engineering (HI-TECH 97), 3345 (1998) 260.

Theoretical description of high-temperature implantation of silicon carbide with N+ and Al+ ions
D. V. Kulikov, Yu. V. Trushin, R. A. Yankov, J. Pezoldt, W. Skorupa,
Tech. Phys. Lett. 24 (1998) (1) 17.

Studies of buried (SiC)1-x(AlN)x layers formed by co-implantation of N+ and Al+ ions into 6H-SiC
J. Pezoldt, R. A. Yankov, M. Voelskow, G. Brauer, W. Anwand, V. Heera, W. Skorupa, P. G. Coleman,
Inst. Phys. Conf. Ser., Defect Recognition and Image Processing in Semiconductors (DRIP VII), 160 (1998) 335.

Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
J. Pezoldt, Th. Stauden, V. Cimalla, G. Ecke, H. Romanus, and G. Eichhorn,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, 264 (1998) 251.

The measurement of the thickness of thin SiC layers on Silicon
V. Cimalla, J. Scheiner, G. Ecke, M. Friedrich, R. Goldhahn, D. R. T. Zahn, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, (ICSCIII-N97), 264-268 (1998) 641.

Cross-sectional micro-Raman spectroscopy: A tool for structural invetigations of thin polytypic SiC layers
T. Werninghaus, D. R. T. Zahn, R. A. Yankov, A. Mücklich, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, (ICSCIII-N97), 264-268 (1998) 661.

Ion beam synthesis: A novel method of producing (SiC)1-x(AlN)x layers
R. A. Yankov, W. Fukarek, M. Voelskow, J. Pezoldt, W. Skorupa,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, (ICSCIII-N97), 264-268 (1998) 753.

A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high dose N+ and Al+ co-implantation
V. Trushin, R. A. Yankov, V. S. Kharlamov, D. V. Kulikov, D. N. Tsigankov, U. Kreissig, M. Voelskow, J. Pezoldt, and W. Skorupa,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, (ICSCIII-N97), 264-268 (1998) 757.

Deposition of aluminum nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
G. Ecke, G. Eichhorn, J. Pezoldt, C. Reinhold, Th. Stauden, and F. Supplieth,
Surf. Coat. Technol. 98 (1998) 1503.

Auger investigations of thin SiC films
G. Ecke, H. Rößler, V. Cimalla, J. Pezoldt, and Th. Stauden,
Fresenius J. Anal. Chem. 361 (1998) 564.

Simulation von Strömungsprozessen in einem RTP-Reaktor
A. Schenk, Yu. P. Rainova, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische UniversitätIlmenau, 21.-24. September, 1998, Ilmenau, Bd 2 (1998) 435.

Ein Wachstumsmodell für die Karbonisierung von Siliziumsubstraten
W. Attenberger, J. K. N. Lindener, B. Stritzker, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24. September, 1998, Ilmenau, Bd 2 (1998) 476.

Werkstoffanalytische Probleme bei der Charakterisierung von Siliziumkarbid für mikrotechnik Anwendungen
L. Spieß, H. Romanus, G. Teichert, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische UniversitätIlmenau, 21.-24. September, 1998, Ilmenau, Bd 2 (1998) 546.

Thermowellenanalyse an implantiertem SiC
G. Teichert, L. Schleicher, L. Spieß, R. A. Yankov, C. Knedlik, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, Bd 2 (1998) 558.

Polytypanalyse von Epitaxieschichten mit RHEED
F. Scharmann, G. Teichert, G. Eichhorn, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24.September, 1998, Ilmenau, Bd 2 (1998) 571.

Kohlenstoffinduzierte Rekonstruktionen auf Si-Oberflächen
F. Scharmann, J. Pezoldt, and V. Cimalla, Th. Stauden, and G. Eichhorn,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24. September, 1998, Ilmenau, Bd 2 (1998) 648.

Der Einfluss der Aufheizgeschwindigkeit auf die Keimbildung von SiC auf Silizium
V. Cimalla, G. Eichhorn, V. Nakov, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische UniversitätIlmenau, 21.-24. September, 1998, Ilmenau, Bd 2 (1998) 659.

On the entrance effects and the influence of buoyancy forces on the fluid flow in RTP reactors
Yu. P. Rainova, K. I. Antonenko, J. Pezoldt, A. Schenk, G. Eichhorn,
Mater. Res. Symp. Proc., 525 (1998) 39.

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, S. Sloboshanin, J.A. Schaefer, and J. Pezoldt,
Appl. Phys. Lett. 73 (1998) 3542.