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INHALTE

Thomas Stauden: Publikationen

Fluidic Self-Assembly on Electropleated Multilayer Solder Bumps with Tailored Transformation Imprinted Melting Points
M. Kaltwasser, U. Schmidt, l. Lösing, S. Biswas, Th. Stauden, and H.O. Jacobs
Scientific Reports, 11325 (2019)  pdfDOI:10.1038/s41598-019-47690-8

Metamorphic and stretchable electronic systems – A Materials Assembly, and Interconnection Challenge

S. Biswas, M. Mozafari, J. Reiprich, L. Schlag, N.A. Isaac, T. Stauden, J. Pezoldt, H.O. Jacobs
pp. 64-65, In: Microsystems Technology in Germany 2018 (Mikrosystemtechnik in Deutschland 2018) (ISSN 2191-7183, trias CONSULT, Berlin, 2018).

Localized collection of airborne biological hazards for environmental monitoring
J. Reiprich, M. Gebinoga, L.-P. Traue, L. Schlag, S. Biswas, M. Kaltwasser, M.C. Honecker, Th. Stauden, J. Pezoldt, A. Schober, H.O. Jacobs
Sens. Actuators, B 273 (2018) 906-915.

Von Nanostrukturen zu metamorphen Systemen
J. Pezoldt, L. Schlag, M. Kaltwasser, S. Biswas, Th. Stauden, H.O. Jacobs
journal 10-9, Ausgabe 2 (2018) 41-42.

Core–Shell Transformation-Imprinted Solder Bumps Enabling Low-Temperature Fluidic Self-Assembly and Self-Alignment of Chips and High Melting Point Interconnects
M. Kaltwasser, U. Schmidt, S. Biswas, J. Reiprich, L. Schlag, N. A. Isaac, Th. Stauden, and H.O. Jacobs
ACS Appl. Mater. Interfaces, Article ASAP, DOI:10.1021/acsami.8b12390 Publication Date (Web): November 15, 2018

Stress-adaptive meander track for stretchable electronics
S. Biswas, J. Reiprich, J. Pezoldt, M. Hein, Th. Stauden,  and H.O. Jacobs
Flex. Print. Electron. 3 (2018) 032001

Selbstjustierendes Wachstum von 3D Nanobrückenverbindungen

L. Schlag, J. Reiprich, Th. Stauden, J. Pezoldt, A. Ispas, A. Bund, P. Schaaf, H.O. Jacob
S. 317-320, Proceedings MikroSystemTechnik Kongress 2017 „MEMS, Mikroelektronik, Systeme“ (ISBN 978-3-8007-4491-6), VDE Verlag HmbH, Berlin, 2017.

Lokalisierter Transport von Schwebstoffen zu programmierbaren, mikroskopischen Sensorpunkten durch Korona-Entladung
J. Reiprich, J. Fang, S.-C. Park, L. Schlag, T. Stauden, J. Pezoldt, H.O. Jacobs
S. 578-581, Proceedings  MikroSystemTechnik Kongress 2017 „MEMS, Mikroelektronik, Systeme“ (ISBN 978-3-8007-4491-6), VDE Verlag HmbH, Berlin, 2017.

Nanostructuring of graphene on semi-insulating SiC
B. Hähnlein, M. Breiter, Th. Stauden, J. Pezoldt
Mater. Sci. Forum 897 (2017) 735-738.

3D Metamorphic Stretchable Microphone Arrays

S. Biswas, J. Reiprich, Th. Cohrs, D.T. Arboleda, A. Schöberl, M. Mozafari, L. Schlag, Th. Stauden, J. Pezoldt, and H.O. Jacobs
Adv. Mater. Technol. 2017, 1700131   pdfDOI: 10.1002/admt.201700131

Nanostructuring of Graphene on Semi-Insulating SiC
B. Hähnlein, M. Breiter, Th. Stauden, J. Pezoldt


Materials Science Forum, Vol. 897, pp. 735-738, 2017 DOI: 10.4028/www.scientific.net/MSF.897.735

Metamorphic hemispherical microphone array for three-dimensional acoustics

S. Biswas, J. Reiprich, Th. Cohrs, Th. Stauden, J. Pezoldt, and H.O. Jacobs
Appl. Phys. Lett. 111, 043109 (2017)  pdfDOI: 10.1063/1.4985710

Corona Assisted Ga Based Nanowire Growth on 3C-SiC (111)/Si (111) Pseudosubstrates
J. Reiprich, Th. Stauden, T. Berthold, M. Himmerlich, J. Pezoldt, H.O. Jacobs
Materials Science Forum (Volume 897), DOI: 10.4028/www.scientific.net/MSF.897.642

Consequences of plasma oxidation and vacuum annealing on the chemical properties and electron accumulation of In2O3 surfaces

T. Berthold, J. Rombach, Th. Stauden, V. Polyakov, V. Cimalla, S. Krischok, O. Bierwagen, M. Himmerlich
Journal of Applied Physics 12 (2016)120 Issue 24,  pdfDOI: 10.1063/1.4972474


Deformable printed circuit boards that enable metamorphic electronics

S. Biswas, A. Schöberl, M. Mozafari, J. Pezoldt, T. Stauden and  H.O. Jacobs
NPG Asia Materials 8 (2016)
 pdfe336; doi:10.1038/am.2016.186

Surface Tension Directed Fluidic Self-Assembly of Semiconductor Chips across Length Scales and Material Boundaries

S. Biswas, M. Mozafari, T. Stauden and  H.O. Jacobs
Micromachines, 7(4) 54 (2016)
 pdfLink

Approaching Roll-to-Roll Fluidic Self-Assembly: Relevant Parameters, Machine Design and Application
S.-C Park, J. Fang, S. Biswas, M. Mozafari, T. Stauden and  H.O. Jacobs
IEEE Micro, PP (99) (2015)

Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared by femtosecond direct laser writing and interference lithography [Invited]

S. Bagheri, Ch. M. Zgrabik, T. Gissibl, A. Tittl, F. Sterl, R. Walter, S. De Zuani, A. Berrier, Th. Stauden, G. Richter, E. L. Hu, and H. Giessen
Optical Materials Express  Vol. 5,   Issue 11,   pp. 2625-2633  (2015)
Link

Millimeter Thin and Rubber-Like Solid-State Lighting Modules Fabricated Using Roll-to-Roll Fluidic Self-Assembly and Lamination
S.-C Park, S. Biswas, J. Fang, M. Mozafari, T. Stauden and  H.O. Jacobs
Adv. Mater., 27: 3661–3668 (2015) Link

Localized collection of airborne analytes: A transport driven approach to improve the response time of existing gas sensor designs including SERS based detection of small molecules
J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt, H.O. Jacobs
MRS Online Proc., Symposium GG: Nanomaterials for harsh environment sensors and related electronic components – design, Synthesis, cjaracterization and utilization, Vol. 1746 (2015)Link

Active Matrix-Based Collection of Airborne Analytes: An Analyte Recording Chip Providing Exposure History and Finger
J. Fang, S.-C. Park,L. Schlag, Th. Stauden, J.  Pezoldt and H. O. Jacobs
Print. Adv. Mater., 26: 7600–7607.(2014) http://dx.doi.org/10.1002/adma.201402589

Self‐Assembly: A First Implementation of an Automated Reel‐to‐Reel Fluidic Self‐Assembly Machine
S-C. Park, J. Fang, S. Biswas, M. Mozafari, Th. Stauden, H. O. Jacobs
Advanced Materials 26 (34), 5890-5890 (2014)http://dx.doi.org/10.1002/adma.201470231

A First Implementation of an Automated Reel-to-Reel Fluidic Self-Assembly Machine
S.-C. Park, J. Fang, S. Biswas, M. Mozafari, Th. Stauden, H. O. Jacobs
Advanced Materials (online available) (2014)

Hydrogen Effects in ECR-Etching of 3C-SiC (100) Mesa Structures
L. Hiller, Th. Stauden, R.M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt
Materials Science Forum 778, 730-733 (2014)

Localized Collection of Airborne Analytes: A Transport Driven Approach to Improbe the Response Time of Existing Gas Sensor Designs
J. Fang, S.-C. Park, L. Schlag, Th. Stauden, J. Pezoldt and H. O. Jacobs
Advanced Functional Materials 24(24), 3706-3714 (2014)

Cubic GaN/AlN multi‐quantum wells grown on pre‐patterned 3C‐SiC/Si (001)
R.M. Kemper, C. Mietze, L. Hiller, Th. Stauden, J. Pezoldt, D. Meertens, M. Luysberg, D.J. As, J.K.N. Lindner
physica status solidi (c) 11 (2), 265-268 (2014)

Die Herstellung haftfester Metallschichten auf PMMA-Oberflächen
Th. Stauden, M. Himmerlich, A. Grewe, S. Krischock
Thüringer Werkstofftag 2013, S. 207-208

Effective collection and detection of airborne species using SERS-based detection and localized electrodynamic precipation
E.-C. Lin, J. Fang, S.-C. Park, Th. Stauden, J. Pezoldt, H.O. Jacobs
Adv. Mater. 25 (2013) 3554-3559

Growth of cubic GaN on 3C-SiC/Si(001) nanostructures
R.M. Kemper, L. Hiller, T. Stauden, J. Pezoldt, K. Duschik, T. Niendorf, H.J. Maier, D. Meertens, K. Tillmann, D.J. As, J.K.N. Lindner
J. Cryst. Growth 378 (2013) 291-294.

Integrated optofluidic system for monitoring particle mass concentration based planar emitter-receiver units
M. Hofmann, R. Müller, S. Stoebenau, Th. Stauden, O. Brodersen, S. Sinzinger
Appl. Optics 51 (2012) 7800-7809


ECR-etching of submicron and nanometer sized 3C-SiC(100) Mesa structures, 
L. Hiller, Th. Stauden, R. M. Kemper, J.K.N. Lindner, D.J. As, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2011 (ICSCRM2011), 717-720 (2012) 90

Smooth ceramic titanium nitride contacts on AlNGaN/GaN-heterostructures
C. Maus, T. Stauden, G. Ecke, K. Tonisch and J. Pezoldt
Semicond. Sci. Technol. 27 (2012) 115007

Schichten über Schichten - Innovative Beschichtungen für komplexe Anwendungen
P. Schaaf, L. Spieß, Th. Kups, H. Romanus, R. Grieseler, M. Hopfeld, M. Wilke, Th. Stauden, D. Lorenz, A. Fischer
Vacuum 3 (2011) 24-32

Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications

K. Brueckner, F. Niebelschuetz, K. Tonisch, Ch. Foerster, V. Cimalla, R. Stephan, J. Pezoldt,T. Stauden, O. Ambacher, and M. A. Hein
Phys. Status Solidi A  (2010) 1–20

Silicon nanoresonator
 
M. Hofer, Th. Stauden, S.A.K. Nomvussi, J. Pezoldt, I.W. Rangelow
Sensor und Messsysteme 2010, Nürnberg, Germany (18. – 19.5.2010), Konferenzbeiträge der 15. ITG-/GMA-Fachtagung “Sensoren und Messsysteme 2010", VDE Verlag GmbH, ISBN 978-3-8007-3260-9,  Berlin, Offenbach, 2010, pages 330 - 333

Tuning resuidual stress in 3C-SiC(100) on Si(100)
 J. Pezoldt, Th. Stauden, F. Niebelschütz, M.A. Alsioufy, R. Nader, P. Masri
 Mater. Sci. Forum, 645-648 (2010) 159-162
 
 Nanostructuring techniques for 3C-SiC(100) NEMS structures
 M. Hofer, Th. Stauden, I.W. Rangelow, J. Pezoldt
 Mater. Sci. Forum, 645-648 (2010) 841-844
 
 Temperature facilated ECR-etching for isotropic SiC structuring
 F. Niebelschütz, Th. Stauden, K. Tonisch, J. Pezoldt 
 Mater. Sci. Forum, 645-648 (2010) 849-852

Polarity determination and control of SiC grown on Si 
J. Pezoldt, Th. Kups, Th. Stauden, B. Schröter
Mater. Sci. Eng. B 165 (2009) 28-33

Surface morphology of Ge-modified 3C-SiC/Si films 

R. Nader, M. Kazan, E. Moussaed, Th.Stauden, M. Niebelschütz , P. Masri, J. Pezoldt 
Surf. Interface Anal.  40 (2008) 1310-1317

Isotropic etching of SiC

Th. Stauden, F. Niebelschütz, K. Tonisch, V. Cimalla, G. Ecke, Ch. Haupt, and J. Pezoldt
Materials Science Forum 600-603 (2009) 651-654

Spectroscopic investigations of the role of Ge in modifying the Si to SiC conversion process
J. Pezoldt, R. Nader, Ch. Zgheib, G. Ecke, R. Pieterwas, Th. Stauden, Th. Wöhner and P. Masri
Surf. Interface Anal. 40 (2008) 794-797

Stress and stress monitoring in SiC–Si heterostructures
 
J. Pezoldt, R. Nader, F. Niebelschütz, V. Cimalla, T. Stauden, Ch. Zgheib and P. Masri
 phys. stat. sol. (a) 205 (2008) 867-871

AlN as a piezoelectric material for integrated micro and nano sensors on silicon
T. Polster, M. Hoffmann, A. Albrecht, K. Tonisch, O. Ambacher, T. Stauden, M. Donahue, S. Michael
Smart Systems Integration 2007, Paris, VDE Verlag, S. 161-166
ISBN 978-3-8007-3009-4


Integration of 
In2O3 nanoparticle based ozone sensors with GaInN/GaN light emitting diodes
Ch.Y. Wang, V. Cimalla, Th. Kups, C.-C. Röhlig, Th. Stauden, O. Ambacher, M. Kunzer, T. Passow, W. Schirmacher, W. Pletschen, K. Köhler, and J. Wagner
 Appl. Phys. Lett. 91 (2007) 103509 (also: Virtual Journal of Nanoscale Science & Technology 16 (2007) Issue 12)

Photoreduction and oxidation behavior of In2O3 nanoparticles by metal organic chemical vapor deposition

Ch. Y. Wang, V. Cimalla, T. Kups, C.-C. Röhlig, H. Romanus, V. Lebedev, J. Pezoldt, T. Stauden, O. Ambacher
 J. Appl. Phys. 102 (2007) 044310 (also: Virtual Journal of Nanoscale Science & Technology 16 (2007) Issue 11)

NOx sensing properties of In2O3 thin films grown by MOCVD

M. Ali, Ch. Y. Wang, C.-C. Röhlig, V. Cimalla, Th. Stauden, and O. Ambacher
Sens. Actuat. B, submitted (2007)

Morphology and Stress Control in UHVCVD of 3C-SiC(100) on Si

J. Pezoldt, Ch. Förster, Th. Stauden, V. Cimalla F. M. Morales, C. Zgheib, P. Masri, and O. Ambacher
Mater. Sci. For. 556-557 (2007) 203-206

SiC-based FET for detection of NOand O2 using InSnOx as a gate material 
 
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik and O. Ambacher
 Sens. Actuators B 122 (2007) 182-186

Reactively sputtered InxVyOz films for detection of NOx, D2, and O2

M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher
Sens. Actuators B123 (2007) 779-783
 
A new type of highly sensitive portable ozone sensor operating at room temperature 
 
Ch. Y. Wang, V. Cimalla, C.-C. Röhlig, Th. Stauden, F. Niebelschuetz, O. Ambacher, O. Kiesewetter, and S. Kittelmann
 5th IEEE Conference on Sensors, EXCO, Daegu, Korea, October 22.-26. 2006, 81-84.

Simulation of quality of SiC/Si interface during MBE deposition of C on Si
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, Yu. V. Trushin, J. Pezoldt
Mat. wiss. Werkst. techn. 37 (2006) 929

Simulation of quality of SiC/Si interface during MBE deposition 
of C on Si
 
D.V. Kulikov, A.A. Schmidt, S.A. Korolev, F.M. Morales, Th. Stauden, J. Pezoldt, Yu.V. Trushin
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, September 11 – 15, (2006) 307


SiC-based FET for NOx gas sensing applications using InVOx metal oxides as a gate material
M. Ali, G. Ecke, V. Cimalla, Th. Stauden, V. Tilak, P. Sandvik, and O. Ambacher
51st Internationales Wissenschaftliches Kolloquium
Technische Universität Ilmenau, 
September 11 – 15, (2006) 245

Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC
J. Pezoldt, Th. Kups, P. Weih, Th. Stauden, O. Ambacher 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 1559 - 1562

Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification 
J. Pezoldt, F.M. Morales, Th. Stauden, Ch. Förster, E. Polychroniadis, J. Stoemenos, D. Panknin, W. Skorupa
Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 295 - 298 

Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts 
 
G. Ferro, M. Soueidan, C. Jacquier, P. Godignon, Th. Stauden, J. Pezoldt, M. Lazar, J. Montserrat, Y. Monteil
 Mater. Sci. Forum, Silicon Carbide and Related Materials 2005 (ICSCRM 2005), 527-529, (2006) 275 - 279 

Investigation of the interface manipulation in SiC(100) on Si(100) with isovalent impurities 
 
J. Pezoldt, F.M. Morales, Ch. Zgheib, Ch. Förster, Th. Stauden, G. Ecke, Ch. Wang, P. Masri 
 Surf. Interface Anal. 38 (2006) 444 - 447 


Phase selective growth and properties of rhombohedral and cubic indium oxide
Ch. Y. Wang, V. Cimalla, H. Romanus, Th. Kups, G. Ecke, Th. Stauden, M. Ali, V. Lebedev, J. Pezoldt, and O. Ambacher
Appl. Phys. Lett. 89 (2006) 011904

Ge-modified Si(100) substrates for the growth of 3C-SiC(100)
Ch. Zgheib, L.E. Mc Neil, P. Masri, Ch. Förster, F.M. Morales, Th. Stauden, O. Ambacher, and J. Pezoldt
Appl. Phys. Lett. 88 (2006) 211909

SiC-based FET for detection of NOx and O2 using InSnOx as a gate material 
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, and O. Ambacher,
Sensors Actuat. B (2006) submitted.

SiC-based MOSFETS for harsh environment emissions sensors 
P. Sandvik, M. Ali, V. Tilak, K. Matocha, Th. Stauden, J. Tucker, J. Deluca, and O. Ambacher
Mater. Sci. Forum 527-529 (2006) 1457 - 1460
 
Stress manipulation in CVD grown SiC on Si mono- and submonolayer Ge precoverages
J. Pezoldt, Ch. Zgheib, F.M. Morales, Ch. Förster, Th. Stauden, Ch. Wang, P. Masri, A. Leycuras, G. Ferro, O. Ambacher 
Electrochem. Soc. Proc., 2005-09 (2005) 707 - 714

Ion beam synthesis of 3C-(Si1-xC1-y)Gex+y solid solutions
P. Weih, Th. Stauden, G. Ecke, S. Shokhovets, Ch. Zgheib, M. Voelskow, W. Skorupa, O. Ambacher, J Pezoldt 
phys. stat. sol. (a) 202 (2005), 545-549.

Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy 
P. Weih, H. Romanus, Th. Stauden, L. Spieß, O. Ambacher, J. Pezoldt 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 173-176.

Nucleation control in FLASIC assisted short time liquid phase epitaxy by melt modification 
J. Pezoldt, E. Polychroniadis, Th. Stauden, G. Ecke, T. Chassagne, P. Vennegues, A. Leycuras, D. Panknin, J. Stoemenos, W.Skorupa 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2004 (ECSCRM 2004), 483-485 (2005) 213–216.

Linear alignement of SiC dots on silicon substrates
V. Cimalla, A.A. Schmidt, Th. Stauden, K. Zekentes, O. Ambacher, J.Pezoldt, 
J. Vac. Sci. Technol. B22 (2004) L20-L24.

The role of Ge predeposition temperature in the epitaxy of SiC on Silicon
F.M. Morales, Ch. Zgheib, S.I. Molina, D. Araujo, R. Garcia, C. Fernandez, A. Sanz-Hervas, P. Masri, P. Weih, Th. Stauden, V. Cimalla, O. Ambacher and J. Pezoldt 
phys. stat. sol. (c) 1 (2004) 341.

Lateral alignment of SiC dots on silicon substrates
V. Cimalla, J. Pezoldt, Th. Stauden, Ch. Förster, and O. Ambacher
phys. stat. sol. (c) 1 (2004) 337. 

3C-SiC:Ge alloy grown on Si(111) substrates by SSMBE
P. Weih, V. Cimalla, Th. Stauden, R. Kosiba, G. Ecke, L. Spiess, H. Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt 
phys. stat. sol. (c) 1 (2004) 347. 

Structure and composition of 3C-SiC:Ge alloys grown on Si (111) substrates by SSMBE 
P. Weih, V. Cimalla, Th. Stauden, R. Kosiba, L. Spieß, H. Romanus, M. Gubisch, W. Bock, Th. Freitag, P. Fricke, O. Ambacher, J. Pezoldt 
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 293.

Influence of the Ge coverage prior to carbonization on the structure of SiC grown on Si(111)
F.M. Morales,Ch. Zgheib, S.I. Molina, D. Araújo, R. García, C. Fernández, A. Sanz-Hervás, P. Masri , P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Mater. Sci. Forum, Silicon Carbide and Related Materials 2003 (ICSCRM 2003), 457-460 (2004) 297. 

In situ spectroscopic ellipsometry of hydrogen-argon plasma cleaned silicon surfaces
Ch. Förster, F. Schnabel, P. Weih, Th. Stauden, O. Ambacher, J. Pezoldt
Thin Solid Films 455-456 (2004) 695. 

High resolution XRD investigations of the strain reduction in 3C-SiC thin films grown on Si(111) substrates
P. Weih, V. Cimalla, Ch. Förster, J. Pezoldt, Th. Stauden, L. Spieß, H. Romanus, M. Hermann, M. Eikhoff, P. Masri, O. Ambacher 
Materials Sci. Forum, Silicon Carbide and Related Materials - 2002 (ECSCRM2002), 433-436 (2003) 233. 

In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)
P. Weih, Th. Stauden and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 
(ICSCRM 2001), 389-393 (2002) 725. 

Silicon Carbide Buffer Layers for Nitride Growth on Si
P. Masri, Z. Herro, Th. Stauden, J. Pezoldt and M. Sumiya,
Mater. Sci. Forum, Silicon Carbide and Related Materials 2001 (ICSCRM 2001), 389-393 (2002) 1485.

Carbonization induced change of polarity for MBE grown 3C-SiC/Si(111)
J. Pezoldt, B. Schröter, V. Cimalla, Th. Stauden, R. Goldhahn, and L. Spieß,
Mater. Sci. Forum, Silicon Carbide and Related Materials (ECSCRM 2000), 353-356 (2001) 179. 

The influnece of Ge on the SiC nucleation on (111)Si surfaces
J. Pezoldt, T. Wöhner, Th. Stauden, J. A. Schaefer, and P. Masri,
Mater. Sci. Forum, Silicon Carbide and Related Materials (ECSCRM 2000), 353-356 (2001) 183.

In situ RHEED studies on the influence of Ge on the early stages of SiC on Si(111) and (100) surfaces
V. Cimalla, K. Zekentes, K. Tsagaraki, Th. Stauden, F. Scharmann, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials (ECSCRM 2000), 353-356 (2001) 187.

Evaluation of carbon surface diffusion on silicon by using surface phase transition
F. Scharmann, P. Maslarski, D. Lehmkuhl, Th. Stauden, and J. Pezoldt,
Proc. of SPIE, Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering (HI-TECH 00), 4348 (2001) 173.

Characterization of SiC grown on Ge modified silicon substrates
J. Pezoldt, Th. Stauden, Ch. Förster, and P. Masri,
Mater. Res. Soc. Symp. Proc. 640 (2001) H5.7.1.

Structural and elasticity-based properties of SiC-based interfaces: their relevance to the heteroepitaxy of III-V nitrides
Averous M.,P. Masri, M. Rouhani Laridjani, Th. Stauden, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc. 639 (2001) G3.49.1:

Elasticity based approach of interfaces: application to heteroepitaxy and hetero-systems
M. Averous, P. Masri, Th. Stauden, and J. Pezoldt,
phys. stat. sol. (a) 87 (2001) 439.

Real time spectroscopic ellipsometry monitoring of the SiC growth during the interaction process of elemental carbon with Si surfaces
T. Wöhner, V. Cimalla, Th. Stauden, J. A. Schaefer, and J. Pezoldt,
Thin Solid Films 364 (2000) 28.

In situ monitoring of the effect of Ge on the SiC growth on Si surfaces
T. Wöhner, Th. Stauden, J. A. Schaefer, and J. Pezoldt,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999 (ICSRM 1999), 338-342 (2000) 281.

The influence of foreign atoms on the the early stages of SiC growth on (111)Si
J. Pezoldt, P. Masri, M. Roughani Laridjani, P. Falgayrettes, 
M. Averous, T. Wöhner, Th. Stauden, G. Ecke, and R. Pieterwas, and L. Spieß,
Mater. Sci. Forum, Silicon Carbide and Related Materials - 1999, part 1, 338 (2000) 289.

Investigation of the nucleation and growth of SiC nanostructures on Si
F. Scharmann, P. Maslarski, Th. Stauden, W. Attenberger, 
J. K. N. Lindner, B. Stritzker, and J. Pezoldt,
Thin Solid Films 380 (2000) 92.

Influence of the heating ramp on the heteroepitaxial growth of SiC on Si
V. Cimalla, Th. Stauden, G. Eichhorn, and J. Pezoldt,
Mater. Sci. Eng. B 61 (1999) 553. 

In situ spectroscopic ellipsometry studies of the interaction process of ethene with Si surfaces during SiC formation
T. Wöhner, Th. Stauden, V. Cimalla, G. Eichhorn, J. A. Schaefer, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc. 569 (1999) 95.

On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces
P. Masri, N. Moreaud, M. Averous, Th. Stauden, T. Wöhner, and J. Pezoldt,
Mater. Res. Soc. Symp. Proc., Wide-Bandgap Semiconductors for High-Power, High-Frequency and High-Temperature Applications- 1999, 572 (1999) 213.

Growth of SiC layers on (111) Si by solid source molecular beam epitaxy
J. Pezoldt, Th. Stauden, V. Cimalla, G. Ecke, H. Romanus, and G. Eichhorn,
Mater. Sci. Forum, Silicon Carbide, III-Nitrides and Related Materials, part 1, 264 (1998) 251. 

Deposition of aluminum nitride films by electron cyclotron resonance plasma-enhanced chemical vapour deposition
G. Ecke, G. Eichhorn, J. Pezoldt, C. Reinhold, Th. Stauden, and F. Supplieth,
Surf. Coat. Technol. 98 (1998) 1503.

Auger investigations of thin SiC films
G. Ecke, H. Rößler, V. Cimalla, J. Pezoldt, and Th. Stauden,
Fresenius J. Anal. Chem., 361 (1998) 564.

Ein Wachstumsmodell für die Karbonisierung von Siliziumsubstraten
W. Attenberger, J. K. N. Lindener, B. Stritzker, V. Cimalla, Th. Stauden, G. Ecke, G. Eichhorn, and J. Pezoldt,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24. September, 1998, Ilmenau, Bd.2 (1998) 476.

Kohlenstoffinduzierte Rekonstruktionen auf Si-Oberflächen
F. Scharmann, J. Pezoldt, and V. Cimalla, Th. Stauden, and G. Eichhorn,
43. Internationales Wissenschaftliches Kolloquium, Technische Universität Ilmenau, 21.-24. September, 1998, Ilmenau, Bd.2 (1998) 648.

Initial stages in the carbonization of (111)Si by solid-source molecular beam epitaxy
V. Cimalla, Th. Stauden, G. Ecke, F. Scharmann, G. Eichhorn, S. Sloboshanin, J.A. Schaefer, and J. Pezoldt,
Appl. Phys. Lett. 73 (1998) 3542.