Jatal, Wael; Baumann, Uwe; Jacobs, Heiko O.; Schwierz, Frank; Pezoldt, Jörg
Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600415, insges. 7 S.
https://doi.org/10.1002/pssa.201600415
Enhancement- and depletion-mode AlGaN/GaN HEMTs on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600415, insges. 7 S.
https://doi.org/10.1002/pssa.201600415
Jatal, Wael; Hörselmann, Ingo; Jacobs, Heiko O.; Schwierz, Frank; Pezoldt, Jörg
AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600416, insges. 6 S.
https://doi.org/10.1002/pssa.201600416
AlGaN HEMT based digital circuits on 3C-SiC(111)/Si(111) pseudosubstrates. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 214 (2017), 4, S. 1600416, insges. 6 S.
https://doi.org/10.1002/pssa.201600416
Biswas, Shantonu;
Schöberl, Andreas; Kaltwasser, Mahsa; Pezoldt, Jörg; Stauden, Thomas; Jacobs, Heiko O.
Deformable printed circuit boards that enable metamorphic electronics. - In: NPG Asia Materials, ISSN 1884-4057, 8 (2016), e336, 8 Seiten
http://dx.doi.org/10.1038/am.2016.186
Deformable printed circuit boards that enable metamorphic electronics. - In: NPG Asia Materials, ISSN 1884-4057, 8 (2016), e336, 8 Seiten
http://dx.doi.org/10.1038/am.2016.186
Zakharko, Yuriy;
Held, Martin; Graf, Arko; Rödlmeier, Tobias; Eckstein, Ralph; Hernandez-Sosa, Gerardo; Hähnlein, Bernd; Pezoldt, Jörg; Zaumseil, Jana
Surface lattice resonances for enhanced and directional electroluminescence at high current densities. - In: ACS photonics, ISSN 2330-4022, Bd. 3 (2016), 12, S. 2225-2230, insges. 6 S.
Gesehen am 01.10.2021
http://dx.doi.org/10.1021/acsphotonics.6b00491
Surface lattice resonances for enhanced and directional electroluminescence at high current densities. - In: ACS photonics, ISSN 2330-4022, Bd. 3 (2016), 12, S. 2225-2230, insges. 6 S.
Gesehen am 01.10.2021
http://dx.doi.org/10.1021/acsphotonics.6b00491
Berthold, Theresa; Stauden, Thomas; Krischok, Stefan; Himmerlich, Marcel; Mischo, Markus; Cimalla, Volker; Rombach, Julius; Bierwagen, Oliver
Influence of thermal and oxidative treatments on the electronic surface properties of In2O3 films. - In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM), (2016), HL 23.6, insges. 1 S.
Im Titel ist "2" und "3" tiefgestellt
Influence of thermal and oxidative treatments on the electronic surface properties of In2O3 films. - In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM), (2016), HL 23.6, insges. 1 S.
Im Titel ist "2" und "3" tiefgestellt
Bagheri, Shahin; Zgrabik, Christine M.; Gissibl, Timo; Tittl, Andreas; Sterl, Florian; Walter, Ramon; De Zuani, Stefano; Berrier, Audrey; Stauden, Thomas; Richter, Gunther; Hu, Evelyn L.; Giessen, Harald
Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared. - In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM), (2016), O 33.11, insges. 1 S.
Large-area fabrication of TiN nanoantenna arrays for refractory plasmonics in the mid-infrared. - In: 80th Annual Meeting of the DPG and DPG-Frühjahrstagung (Spring Meeting) of the Condensed Matter Section (SKM), (2016), O 33.11, insges. 1 S.
Geng, Zhansong; Kinberger, Wilhelm; Granzner, Ralf; Pezoldt, Jörg; Schwierz, Frank
2D electronics - opportunities and limitations. - In: 2016 46th European Solid-State Device Research Conference (ESSDERC), ISBN 978-1-5090-2969-3, (2016), S. 230-235
http://dx.doi.org/10.1109/ESSDERC.2016.7599628
2D electronics - opportunities and limitations. - In: 2016 46th European Solid-State Device Research Conference (ESSDERC), ISBN 978-1-5090-2969-3, (2016), S. 230-235
http://dx.doi.org/10.1109/ESSDERC.2016.7599628
Pezoldt, Jörg; Kharlamov, Vladimir S.; Kulikov, Dmitri V.; Lubov, Maxim N.; Trushin, Yuri V.
Concentration profile simulation of SiC/Si heterostructures. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 501-504
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.501
Concentration profile simulation of SiC/Si heterostructures. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 501-504
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.501
Pezoldt, Jörg;
Heteropolytypic superlattices. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 278-282
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.278
Heteropolytypic superlattices. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 278-282
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.278
Jatal, Wael; Baumann, Uwe; Jacobs, Heiko O.; Schwierz, Frank; Pezoldt, Jörg
Tri-gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 1174-1177
Im Titel sind "0.2" und "0.8" tiefgestellt
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.1174
Tri-gate Al0.2Ga0.8N/AlN/GaN HEMTs on SiC/Si-substrates. - In: Materials science forum, ISSN 1662-9752, Bd. 858 (2016), S. 1174-1177
Im Titel sind "0.2" und "0.8" tiefgestellt
http://dx.doi.org/10.4028/www.scientific.net/MSF.858.1174