Imprinting the polytype structure of silicon carbide by rapid thermal processing. - In: Crystals, ISSN 2073-4352, Bd. 10 (2020), 6, 523, insges. 21 S.
https://doi.org/10.3390/cryst10060523
RF properties of stretchable transmission line structures. - In: 2020 German Microwave Conference, (2020), S. 272-275
https://ieeexplore.ieee.org/document/9080242
Structural and local electronic properties of clean and Li-intercalated graphene on SiC(0001). - In: Surface science, ISSN 1879-2758, Bd. 699 (2020), 121638
https://doi.org/10.1016/j.susc.2020.121638
Transformation of the buffer layer grown on 4H-SiC to single-layer graphene by ex situ hydrogen intercalation. - In: Fullerenes, nanotubes & carbon nanostructures, ISSN 1536-4046, Bd. 28 (2020), 4, S. 316-320
https://doi.org/10.1080/1536383X.2019.1708733
Bonding mechanisms in laser-assisted joining of metal-polymer composites. - In: Journal of advanced joining processes, ISSN 2666-3309, Bd. 1 (2020), 100008, insges. 12 S.
Metal-Plastic hybrid components and assemblies are gaining importance due to novel lightweight constructions and a growing integration of functions by using the right material at the right place. Thermal joining enables a joining technology for thermoplastic materials and engineering metals without using adhesive or joining elements. The paper provides novel investigations on the interaction between form fit and physicochemical interactions due to the combined use of specifically used oxide layers, interaction barriers and defined surface structuring by laser processing. Thereby, the design of experiments allows the investigation of the form fit as dominant interaction mode.
https://doi.org/10.1016/j.jajp.2020.100008
Automated parameter extraction of ScAlN MEMS devices using an extended Euler-Bernoulli beam theory. - In: Sensors, ISSN 1424-8220, Bd. 20 (2020), 4, 1001, insges. 19 S.
https://doi.org/10.3390/s20041001
Electrodeposition of aluminium-nickel films in 1-butyl-1-methylpyrrolidinium-bis(trifluoromethylsulfonyl) amide. - In: Meeting abstracts, ISSN 2151-2043, Bd. MA2019-02 (2019), 17, 963
https://doi.org/10.1149/MA2019-02/17/963
Impurity effects on nucleation and growth of SiC clusters and layers on Si(100) and Si(111). - In: Physics of the solid state, ISSN 1090-6460, Bd. 61 (2019), 12, S. 2468-2472
https://doi.org/10.1134/S1063783419120382
Optical estimation of the carrier concentration and the value of strain in monolayer graphene grown on 4H-SiC. - In: Semiconductors, ISSN 1090-6479, Bd. 53 (2019), 14, S. 1904-1909
https://doi.org/10.1134/S1063782619140057
LTCC as substrate - enabling semiconductor and packaging integration. - In: 2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC), (2019), insges. 4 S.
https://doi.org/10.23919/EMPC44848.2019.8951794