Kretzer, Olaf; Lenk, Gerald; Wesch, Werner; Gunst, Ullrich
SIMS-characterization of ultra shallow boron-profiles after BF2+- and B+-low-energy-implantation in silicon. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 349 (1994), 1, S. 184-186
Im Titel ist "2" tiefgestellt, "+" hochgestellt
http://dx.doi.org/10.1007/BF00323265
SIMS-characterization of ultra shallow boron-profiles after BF2+- and B+-low-energy-implantation in silicon. - In: Fresenius' journal of analytical chemistry, ISSN 1432-1130, Bd. 349 (1994), 1, S. 184-186
Im Titel ist "2" tiefgestellt, "+" hochgestellt
http://dx.doi.org/10.1007/BF00323265
Nennewitz, Olaf; Schmidt, H.; Pezoldt, Jörg; Stauden, Thomas; Schawohl, Jens; Spieß, Lothar
X-ray diffraction analysis of RTP-annealed thin ZnO films. - In: Thin films, (1994), S. 666-669
X-ray diffraction analysis of RTP-annealed thin ZnO films. - In: Thin films, (1994), S. 666-669
Nennewitz, Olaf; Schmidt, H.; Pezoldt, Jörg; Stauden, Thomas; Schawohl, Jens; Spieß, Lothar
Rapid thermal annealing of thin ZnO films. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 145 (1994), 2, S. 283-288
http://dx.doi.org/10.1002/pssa.2211450208
Rapid thermal annealing of thin ZnO films. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 145 (1994), 2, S. 283-288
http://dx.doi.org/10.1002/pssa.2211450208
Zöllner, Jens-Peter; Patzschke, Ingo; Pietzuch, V.; Pezoldt, Jörg; Leitz, Gunnar
Mathematical modelling of the dynamic behaviour in RTP. - In: Microelectronic engineering, Bd. 25 (1994), 2/4, S. 359-364
http://dx.doi.org/10.1016/0167-9317(94)90037-X
Mathematical modelling of the dynamic behaviour in RTP. - In: Microelectronic engineering, Bd. 25 (1994), 2/4, S. 359-364
http://dx.doi.org/10.1016/0167-9317(94)90037-X
Zöllner, Jens-Peter; Patzschke, Ingo; Pietzuch, V.; Pezoldt, Jörg; Eichhorn, Gerd
To the influence of the wafer edge in RTP. - In: Rapid thermal and integrated processing II, (1993), S. 177-182
To the influence of the wafer edge in RTP. - In: Rapid thermal and integrated processing II, (1993), S. 177-182
Leitz, Gunnar; Pezoldt, Jörg; Patzschke, Ingo; Zöllner, Jens-Peter; Eichhorn, Gerd
Investigation of dynamical temperature behaviour in RTP. - In: Rapid thermal and integrated processing II, (1993), S. 171-176
Investigation of dynamical temperature behaviour in RTP. - In: Rapid thermal and integrated processing II, (1993), S. 171-176
Zöllner, Jens-Peter; Ullrich, Klaus; Pezoldt, Jörg; Eichhorn, Gerd
New lamp arrangement for rapid thermal processing. - In: Applied surface science, Bd. 69 (1993), 1/4, S. 193-197
http://dx.doi.org/10.1016/0169-4332(93)90503-4
New lamp arrangement for rapid thermal processing. - In: Applied surface science, Bd. 69 (1993), 1/4, S. 193-197
http://dx.doi.org/10.1016/0169-4332(93)90503-4
Pezoldt, Jörg; Kalnin, Andrei A.; Moskwina, D. R.; Savelyev, W. D.
Polytype transitions in ion implanted silicon carbide. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 80/81 (1993), 2, S. 943-948
http://dx.doi.org/10.1016/0168-583X(93)90714-H
Polytype transitions in ion implanted silicon carbide. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 80/81 (1993), 2, S. 943-948
http://dx.doi.org/10.1016/0168-583X(93)90714-H
Pezoldt, Jörg; Kalnin, Andrei A.; Savelyev, W. D.
Application of nonequilibrium phase transition to heteropolytype structure creation. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 65 (1992), 1/4, S. 361-365
http://dx.doi.org/10.1016/0168-583X(92)95067-2
Application of nonequilibrium phase transition to heteropolytype structure creation. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 65 (1992), 1/4, S. 361-365
http://dx.doi.org/10.1016/0168-583X(92)95067-2
Festic, Vladimir; Kocanda, Jozef; Vesely, Marian; Gunst, Ullrich; Müller, Bernhard
Gating technique on SIMS depth profiling - dynamic range of Ga implanted Si. - In: Vortragsreihen Mikroelektronik und Schaltungstechnik, Kommunikations- und Meßtechnik, (1992), S. 485-490
Gating technique on SIMS depth profiling - dynamic range of Ga implanted Si. - In: Vortragsreihen Mikroelektronik und Schaltungstechnik, Kommunikations- und Meßtechnik, (1992), S. 485-490