Defekte von Silizium

We want to understand the fundamental structure and kinetics of defects in silicon to control their impact on silicon device properties. In the focus of our current research is one special sort of defects, which consist of an acceptor atom and a silicon interstitial atom nearby. We call these defects ASi-Sii-defects. These defects have a detrimental impact on silicon solar cells, silicon photon detectors as well as silicon radiation detectors. They degrade the device performance under charge carrier injection. If a detailed understanding of e.g. the defect kinetics is revealed, these defects could be rendered harmless by defect-engineering. Therefore, the ASi-Sii-defect kinetics are analysed by low temperature photoluminescence spectroscopy.

Further reading: 

C. Möller und K. Lauer, „Light-induced degradation in indium-doped silicon“, physica status solidi (RRL) - Rapid Research Letters, Bd. 7, Nr. 7, S. 461–464, Juli 2013, doi: 10.1002/pssr.201307165.

K. Lauer, C. Möller, D. Schulze, C. Ahrens, und J. Vanhellemont, „Discussion of ASi-Sii-defect model in frame of experimental results on P line in indium doped silicon“, Solid State Phenomena, Bd. 242, S. 90, Sep. 2015, doi: 10.4028/

K. Lauer, C. Möller, D. Schulze, und C. Ahrens, „Identification of photoluminescence P line in indium doped silicon as InSi-Sii defect“, AIP Advances, Bd. 5, Nr. 1, S. 017101, Jan. 2015, doi: 10.1063/1.4905066.


Contact person: Dr. Kevin Lauer