Changes of electronic properties of AlGaN/GaN HEMTs by surface treatment. - In: Wide-bandgap materials for solid-state lighting and power electronics, ISBN 978-1-5108-0616-0, (2015), S. 1-6
Hydrogen adsorbed at N-polar InN: significant changes in the surface electronic properties. - In: Physical review. Condensed matter and materials physics / American Physical Society. - College Park, Md. : APS, 1970-2015 , ISSN: 1550-235X , ZDB-ID: 1473011-X, ISSN 1550-235X, Bd. 91 (2015), 24, S. 245305, insges. 8 S.
http://dx.doi.org/10.1103/PhysRevB.91.245305
Morphology, crystal structure and charge transport in donor-acceptor block copolymer thin films. - In: ACS applied materials & interfaces, ISSN 1944-8252, Bd. 7 (2015), 23, S. 12309-12318
donor acceptor block copolymers; thin films; microphase structure; crystal texture; X-ray scattering; charge carrier mobility
http://dx.doi.org/10.1021/am5049948
Electrochemical lithiation of thin silicon based layers potentiostatically deposited from ionic liquid. - In: Electrochimica acta, ISSN 1873-3859, Bd. 168 (2015), S. 403-413
http://dx.doi.org/10.1016/j.electacta.2015.03.216
Vacuum electrochemistry in ionic liquids. - In: The Electrochemical Society interface, ISSN 1944-8783, Bd. 23 (2014), 1, S. 53-57
https://doi.org/10.1149/2.F06141if
Surface structure of [XMIm]Tf 2 N ultrathin ionic liquid films probed by metastable He atoms and photoelectron spectroscopies (UPS and XPS). - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 340 (2014), S. 51-57
http://dx.doi.org/10.1016/j.nimb.2014.07.036
Densification of thin aluminum oxide films by thermal treatments. - In: Materials sciences and applications, ISSN 2153-1188, Bd. 5 (2014), 8, S. 628-638
Thin AlOx films were grown on 4H-SiC by plasma-assisted atomic layer deposition (ALD) and plasma assisted electron-beam evaporation at 300˚C. After deposition, the films were annealed in nitrogen at temperatures between 500˚C and 1050˚C. The films were analyzed by X-ray reflectivity (XRR) and atomic force microscopy (AFM) in order to determine film thickness, surface roughness and density of the AlOx layer. No differences were found in the behavior of AlOx films upon annealing for the two different employed deposition techniques. Annealing results in film densification, which is most prominent above the crystallization temperature (800˚C). In addition to the increasing density, a mass loss of ˜5% was determined and attributed to the presence of aluminum oxyhydroxide in as deposited films. All changes in film properties after high temperature annealing appear to be independent of the deposition technique.
http://dx.doi.org/10.4236/msa.2014.58065
Modification of the active layer/PEDOT:PSS interface by solvent additives resulting in improvement of the performance of organic solar cells. - In: ACS applied materials & interfaces, ISSN 1944-8252, Bd. 6 (2014), 14, S. 11068-11081
http://dx.doi.org/10.1021/am503284b
Physik als Nebenfach: fachübergreifende Kontexteinbettung am Beispiel der Ingenieurwissenschaften. - In: Frühjahrstagung der Fachverbände Didaktik der Physik, Physik der Hadronen und Kerne, 2014, DD 14.3
Reduced electron accumulation at InN(0001) surfaces via saturation of surface states by donor- or acceptor-type adsorbates. - In: DPG-Frühjahrstagung (DPG Spring Meeting) of the Condensed Matter Section [SKM] together with the DPG Divisions: Microprobes, the Working Groups: Industry and Business, young DPG as well as the Committee Accelerator Physics ; March 30 - April 4, 2014, Technical University of Dresden, 2014, HL 5.3