5.) S. Shekarabi, M.A. Zare Pour, H. Su, W. Zhang, C. He, K.D. Hanke, O. Romanyuk, A. Paszuk, W. Jaegermann, S. Hu, T. Hannappel;
Photoemission Study of GaN Passivation Layers and Band Alignment at GaInP(100) Heterointerfaces
ACS Applied Materials & Interfaces  17 (2025) 7087−7097

4.) M. Großmann, K.D. Hanke, C.Y. Bohlemann, A. Paszuk, T. Hannappel, W.G. Schmidt, E. Runge;
On the origin of bulk-related anisotropies in surface optical spectra
arXiv preprint arXiv:2503.11253 (2025)

3.) M.A. Zare Pour, S. Shekarabi, I.A. Ruiz Alvarado, J. Diederich, Y. Gao, A. Paszuk, D.C. Moritz, W.Jaegermann, D. Friedrich, R. van de Krol, W.G. Schmidt, T. Hannappel;
Exploring Electronic States and Ultrafast Electron Dynamics in AlInP Window Layers: The Role of Surface Reconstruction
Advanced Functional Materials (2025) 2423702

2.) M.A. Zare Pour, M.N. Qaisrani, C. Höhn, JL Wolf, N. Mogharehabed, J. Velazquez Rojas, W. Jaegermann, E. Runge, R. van de Krol, T. Hannappel, C. Dreßler, A. Paszuk;
Composition and Resulting Band Alignment at the TiO2/InP Heterointerface: A Fundamental Study Combining Photoemission Spectroscopy and Theory
Advanced Functional Materials (2025) 2506105

1.) J. Diederich, A Paszuk, I.A. Ruiz Alvarado, M. Krenz, M.A. Zare Pour, D. Suresh Babu, J. Velazquez Rojas, C. Höhn, Y. Gao, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G.Schmidt, T. Hannappel, R. van de Krol, D. Friedrich;
Ultrafast Electron Dynamics at the Water‐Modified InP (100) Surface
Advanced Materials Interfaces (2025) e00463

7.) D. Ostheimer, C. Dreßler, M. Großmann, M.A. Zare Pour, S. Shekarabi, K.D. Hanke, J. Koch, A. Paszuk, E. Runge, T. Hannappel;
Water Vapor Interaction with Well-Ordered GaInP (100) Surfaces
The Journal of Physical Chemistry C 128 (46) (2024) 19559

6.) J. Diederich, J. Velazquez Rojas, A. Paszuk, M.A. Zare Pour, C. Höhn, I.A. Ruiz Alvarado, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van de Krol, D. Friedrich;
Ultrafast Electron Dynamics at the P-rich Indium Phosphide/TiO2 Interface
Advanced Functional Materials 34 (49) (2024) 2409455

5.) C.Y. Bohlemann, A. Flötotto, A. Paszuk, M. Nandy, M. Großmann, O. Romanyuk, K.D. Hanke, A. Gieß, P. Kleinschmidt, E. Runge, T. Hannappel;
Surface structure of MOVPE-prepared As-modified Si (100) substrates
Applied Surface Science 675 (2024) 160879

4.) T. Hannappel, S. Shekarabi, W. Jaegermann, E. Runge, J.P. Hofmann, R. van de Krol, M.M. May, A. Paszuk, F. Hess, A. Bergmann, A. Bund, C. Cierpka, C. Dreßler, F. Dionigi, D. Friedrich, M. Favaro, S. Krischok, M. Kurniawan, K. Lüdge, Y. Lei, B. Roldan Cuenya, P. Schaaf, R. Schmidt-Grund, W.G. Schmidt, P. Strasser, E. Unger, M.V. Montoya, D. Wang, H. Zhang;
Integration of multi-junctionabsorbersandcatalystsforefficient solar-drivenartificialleafstructures: a physicalandmaterialsscienceperspective
RRL Solar 8 (2024) 2301047; DOI: 10.1002/solr.202301047

3.) D.C. Moritz, W. Calvet, M.A. ZarePour, A. Paszuk, T. Mayer, T. Hannappel, J.P. Hofmann, W. Jaegermann;
(Photo-)electrochemicalreactions on semiconductorsurfaces A: Si surfaces–atomicand electronic structure
Encyclopediaof Solid-Liquid Interfaces (First Edition) (2024) 93-119, ISBN 9780323856706,
DOI: 10.1016/B978-0-323-85669-0.00130-6

2.) A. Hajduk, M.A. ZarePour, A. Paszuk, M. Guidat, M. Löw, F. Ullmann, D.C. Moritz, J.P. Hofmann, S. Krischok, E. Runge, W.G. Schmidt, W. Jaegermann, M.M. May, T. Hannappel;
(Photo-)electrochemicalreactions on semiconductorsurfaces, part B: III-V surfaces–atomicand electronic structure
Encyclopediaof Solid-Liquid Interfaces (First Edition) (2024) 120-156, ISBN 9780323856706,
DOI: 10.1016/B978-0-323-85669-0.00113-6

1.) J. Diederich, J. Velasquez Rojas, M.A. ZarePour, I.A. Ruiz Alvarado, A. Paszuk, R Sciotto, C. Höhn, K. Schwarzburg, D. Ostheimer, R. Eichberger, W.G. Schmidt, T. Hannappel, R. van de Krol, D. Friedrich;
UnravelingElectron Dynamics in p-type Indium Phosphide (100): A Time-ResolvedTwo-Photon Photoemission Study
Journal ofthe American Chemical Society 146 (2024) 8949; DOI: 10.1021/jacs.3c12487

4.) M. Nandy, A. Paszuk, K.D. Hanke, P. Kleinschmidt, T. Hannappel;
Optical In Situ Studies ofGe(100) Interfacial Exchange Reactions in GaAs-Rich MOVPE Reactorsfor Low-Defect III-P Growth
ACS Applied Electronic Materials 5 (2023) 1295; DOI: 10.1021/acsaelm.2c01775

3.) C. Maheu, M.A. ZarePour, I. Damestoy, D. Ostheimer, M. Mellin, D.C. Moritz, A. Paszuk, W. Jaegermann, T. Mayer, T. Hannappel, J.P. Hofmann;
Tapered Cross SectionPhotoelectronSpectroscopyProvidesInsightsintotheBuried Interfaces of III‐V Semiconductor Devices
Advanced Materials Interfaces 10 (2023) 220164810; DOI: 10.1002/admi.20220164

2.) D.C. Moritz, W. Calvet, M.A. ZarePour, A. Paszuk, T. Mayer, T. Hannappel, J.P. Hofmann, W. Jaegermann;
Dangling Bond Defects on Si SurfacesandTheirConsequences on Energy Band Diagrams: From a PhotoelectrochemicalPerspective
Solar RRL 7 (2023), 2201063; DOI: 10.1002/solr.202201063

1.) S. Shekarabi, M.A. Pour, H. Su, W. Zhang, C. He, O. Romanyuk, A. Paszuk, S. Hu, T. Hannappel;
Photoemissionstudyand band alignmentofGaNpassivationlayers on GaInPheterointerface
arXiv:2310.15212v1 [physics.app-ph], DOI: 10.48550/arXiv.2310.15212   

6.) O. Romanyuk, A. Paszuk, I. Gordeev, R.G. Wilks, S. Ueda, C. Hartmann, R. Felix, M. Bär, C. Schlueter, A. Gloskovskii, I. Bartoš, M. Nandy, J. Houdková, P. Jiříček, W. Jaegermann, J.P. Hofmann, T. Hannappel;
Combiningadvancedphotoelectronspectroscopy approaches toanalysedeeplyburiedGaP (As)/Si (100) interfaces: Interfacialchemicalstatesandcomplete band energydiagrams
Applied Surface Science 605 (2022) 154630; DOI: 10.1016/j.apsusc.2022.154630

5.) M.A. ZarePour, O. Romanyuk, D.C. Moritz, A. Paszuk, C. Maheu, S. Shekarabi, K.D. Hanke, D. Ostheimer, T. Mayer, J.P. Hofmann, W. Jaegermann, T. Hannappel;
Band energydiagramsof n-GaInP/n-AlInP(100) surfacesand heterointerfaces studiedby X-rayphotoelectronspectroscopy
Surfacesand Interfaces 34 (2022) 102384; DOI: 10.1016/j.surfin.2022.102384

4.) B. Borkenhagen, A. Paszuk, F.N. Knoop, O. Supplie, M. Nandy, G. Lilienkamp, P. Kleinschmidt, T. Hannappel, W. Daum;
Structure and Origin of Antiphase Domains andRelatedDefects in ThinGaPEpilayers on As-Modified Si(100)
Crystal Growth & Design  22 (2022) 7040; DOI: 10.1021/acs.cgd.2c00697

3.) L.J. Glahn, I.A.R. Alvarado, S. Neufeld, M.A. ZarePour, A. Paszuk, D. Ostheimer, S. Shekarabi, O. Romanyuk, D.C. Moritz, J.P. Hofmann, W. Jägermann, T. Hannappel, W.G. Schmidt;
Clean and Hydrogen-AbsorbedAlInP(001) Surfaces: Structuresand Electronic Properties
Physica Status Solidi (b) 259 (2022) 2200308; DOI: 10.1002/pssb.202200308

2.) D.C. Moritz, I.A.R. Alvarado, M.A. ZarePour, A. Paszuk, T. Frieß, E. Runge, J.P. Hofmann, T. Hannappel, W.G. Schmidt, W. Jaegermann;
P-terminatedInP (001) surfaces: Surface band bendingandreactivitytowater
Applied Materials and Interfaces 14 (2022) 47255; DOI: 10.1021/acsami.2c13352

1.) T. E. Saenz, M. Nandy, A. Paszuk, D. Ostheimer, J. Koch, W. E. McMahon, J. D. Zimmerman, T. Hannappel, E. L. Warren,
MOCVD surface preparation of V-groove Si for III-V growth
Journal of Crystal Growth 597 (2022) 126843; DOI: 10.1016/j.jcrysgro.2022.126843

5.) M. Nandy, A. Paszuk, M. Feifel, C. Koppka, P. Kleinschmidt, F. Dimroth, T. Hannappel;
A Route toObtaining Low-Defect III–V Epilayers on Si (100) Utilizing MOCVD
Crystal Growth & Design 21 (2021) 5603; DOI: 10.1021/acs.cgd.1c00410

4.) O. Romanyuk, A. Paszuk, I. Bartoš, R.G. Wilks, M. Nandy, J. Bombsch, C. Hartmann, R. Félix, S. Ueda, I. Gordeev, J. Houdkova, P. Kleinschmidt, P. Machek, M. Bär, P. Jiříček, T. Hannappel;
Band Bending at Heterovalent Interfaces: Hard X-rayPhotoelectronSpectroscopyofGaP/Si (001) Heterostructures
Applied Surface Science 565 (2021) 150514; DOI: 10.1016/j.apsusc.2021.150514

3.) A. Paszuk, O. Supplie, S. Brückner, E. Barrigón, M. M. May, M. Nandy, A. Gieß, A. Dobrich, P. Kleinschmidt, I. Rey-Stolle, T. Hannappel;
AtomicsurfacecontrolofGe (100) in MOCVD reactorscoatedwith (Ga) As residuals
Applied Surface Science 565 (2021) 150513; DOI: 10.1016/j.apsusc.2021.150513

2.) N. V. Ryzhkov, O. Ledovich, L. Eggert, A. Bund, A. Paszuk, T. Hannappel, K. Klyukin, V. Alexandrov, E. V. Skorb;
Layer-By-Layer PolyelectrolyteAssemblyfortheProtectionofGaPSurfacesfromPhotocorrosion
ACS Applied Nano Materials 4(2021) 425; DOI: 10.1021/acsanm.0c02768

1.) M. Nandy, A. Paszuk, M. Feifel, C. Koppka, P. Kleinschmidt, F. Dimroth, T. Hannappel;
Reductionofdefects in GaPlayersgrown on Si (100) by MOCVD
2021 IEEE 48th PhotovoltaicSpecialists Conference (PVSC 2021) 1344;
DOI: 10.1109/PVSC43889.2021.9518758

4.) P. Kleinschmidt, P. Mutombo, T .Berthold, A. Paszuk, M. Steidl, G. Ecke, A. Nägelein, C. Koppka, O. Supplie, S. Krischok, O. Romanyuk, M. Himmerlich, T. Hannappel;
Atomicsurface structure of MOVPE-preparedGaP (111) B
Applied Surface Science 534 (2020) 147346; DOI: 10.1016/j.apsusc.2020.147346

3.) O. Romanyuk, I. Gordeev, A. Paszuk, O. Supplie, J.P. Stoeckmann, J. Houdkova, E. Ukraintsev, I. Bartos, P. Jiiricek, T. Hannappel;
GaP/Si(001) interfacestudyby XPS in combinationwith Ar gas clusterion beam sputtering
Applied Surface Sciences 514 (2020) 145903; DOI: 10.1016/j.apsusc.2020.145903

2.) O. Supplie, A. Heinisch, A. Paszuk, M. Nandy, A. Tummalieh, P. Kleinschmidt, M. Sugiyama, T. Hannappel;  
Quantificationofthe As/P content in GaAsPduring MOVPE growth
Applied Physics Letters 117 (2020) 061601; DOI: 10.1063/5.0012948

1.) O. Romanyuk, O. Supplie, A. Paszuk, J.P. Stoeckmann, R.G. Wilks, J. Bombsch, C. Hartmann, R. Garcia-Diez, S. Ueda, I. Bartos, I. Gordeev, J. Houdkkova, P. Kleinschmidt, M. Bär, P. Jiricek, T. Hannappel;
Hard X‐rayphotoelectronspectroscopystudyofcorelevelshifts at buriedGaP/Si (001) interfaces
Surface and Interface Analysis 52 (2020) 933; DOI: 10.1002/sia.6829

13.) O. Supplie, O. Romanyuk, C. Koppka, M. Steidl, A. Nägelein, A. Paszuk, A. Dobrich, L. Winterfeld, P. Kleinschmidt, E. Runge, T. Hannappel;
MetalorganicVapor Phase Epitaxyof III-V-on-Silicon: Experiment & Theory
Progress in Crystal Growth andCharacterizationof Materials 64 (2018) 103;
DOI: 10.1016/j.pcrysgrow.2018.07.002

12. ) A. Paszuk, O. Supplie, M. Nandy, S. Brückner, A. Dobrich, P. Kleinschmidt, B. Kim, Y. Nakano, M. Sugiyama, T. Hannappel;
Double-layerStepped Si(100) SurfacesPrepared in As-rich CVD ambience
Applied Surface Science 462 (2018) 1002; DOI: 10.1016/j.apsusc.2018.07.181      

11.) A. Paszuk, O. Supplie, B. Kim, S. Brückner, M. Nandy, A. Heinisch, P. Kleinschmidt, Y. Nakano, M. Sugiyama, T. Hannappel;
GaAsP/Si tandem solar cells: In situ study on GaP/Si:Asvirtualsubstrate preparation
Solar Energy Materials and Solar Cells 180 (2018) 343; DOI: 10.1016/j.solmat.2017.07.032

10.) B. Kim, K. Toprasertpong, A. Paszuk, O. Supplie, Y. Nakano, T. Hannappel, M. Sugiyama;
GaAsP/Si tandem solar cells: Realisticpredictionofefficiencygainbyapplyingstrain-balanced multiple quantumwells
Solar Energy Materials and Solar Cells 180 (2018) 303; DOI: 10.1016/j.solmat.2017.06.060

9.) A. Paszuk, O. Supplie, M. Nandy, S. Brückner, A. Dobrich, P. Kleinschmidt, B. Kim, Y. Nakano, M. Sugiyama, T. Hannappel; 
As-modified Si(100) Surfacesfor III-V-on-Si Tandem Solar Cells 
Proc. IEEE PVSC 45 / Proc. IEEE WCPEC 7, IEEE PhotovoltaicSpecialists Conference, WaikoloaVillage, HI, USA (2018) 0233; DOI: 10.1109/PVSC.2018.8547817

8.) W. Zhao, M. Steidl, A. Paszuk, S. Brückner, A. Dobrich, O. Supplie, P. Kleinschmidt, T. Hannappel;
Analysis ofthe Si(111) surfaceprepared in chemicalvaporambientfor subsequent III-V heteroepitaxy
Applied Surface Science 392 (2017) 1043; DOI: 10.1016/j.apsusc.2016.09.081

7.) A. Paszuk, A. Dobrich, C. Koppka, S. Brückner, M. Duda, P. Kleinschmidt, O. Supplie, T. Hannappel;
In situ preparation of Si p-n junctionsand subsequent surface preparation for III-V heteroepitaxy in MOCVD ambient
Journal of Crystal Growth 464 (2017) 14; DOI: 10.1016/j.jcrysgro.2016.11.109

6.) A. Paszuk, O. Supplie, S. Brückner, M. M. May, A. Dobrich, A. Nägelein, B. Kim, Y. Nakano, M. Sugiyama, P. Kleinschmidt, T. Hannappel;
In situ controloverthesublatticeorientationofGaP/Si(100):As virtualsubstratesfortandemabsorbers
Proc. IEEE PVSC 44, IEEE PhotovoltaicSpecialists Conference, Washington, WA, USA (2017) 2538; DOI: 10.1109/PVSC.2017.8366561

5.) B. Kim, K. Toprasertpong, O. Supplie, A. Paszuk, T. Hannappel, M. Sugiyama; 
Efficiency ofGaAsP/Si Two-junction Solar Cells with Multi-Quantum Wells: A Realistic Modeling with Carrier Collection Efficiency 
Proc. IEEE PVSC 44, IEEE PhotovoltaicSpecialists Conference, Washington, WA, USA (2017) 2524; DOI: 10.1109/PVSC.2017.8366310

4.) C. Koppka, A. Paszuk, M. Steidl, O. Supplie, P. Kleinschmidt, T. Hannappel;
Suppression ofrotationaltwinformation in virtualGaP/Si(111) substratesfor III−V nanowiregrowth
Crystal Growth & Design 16 (2016) 6208; DOI: 10.1021/acs.cgd.6b00541

3.) O. Supplie, MM. May, P. Kleinschmidt, A. Nägelein, A. Paszuk, S. Brückner, T. Hannappel;
In situ controlledheteroepitaxyof single-domain GaP on As-modified Si(100)
APL Materials 3 (2015) 126110; DOI: 10.1063/1.4939005

2.) A. Paszuk, S. Brückner, M. Steidl, W. Zhao, A. Dobrich, O. Supplie, P. Kleinschmidt, W. Prost, T. Hannappel;
Controlling thepolarityofmetalorganicvaporphaseepitaxy-grownGaP on Si(111) for subsequent III-V nanowiregrowth
Applied Physics Letters  106 (2015)  231601; DOI: 10.1063/1.4922275

1.)  O. Skibitzki, A. Paszuk, F. Hatami, P. Zaumseil, Y. Yamamoto, M.A. Schubert, A. Trampert, B. Tillack, W.T. Masselink, T. Hannappel, T. Schroeder; 
Lattice-engineered Si1-xGex-buffer on Si(001) forGaPintegration 
Journal of Applied Physics 115 (2014) 103501; DOI: 10.1063/1.4864777