Micro and semiconductor technology 2 - Interaktive Studienpläne der TU Ilmenau

Grundkenntnisse in Physik, Chemie und den Funktionsweisen von elektronischen Bauelementen und integrierten Schaltkreisen

Grundverständnis und Verständnis für die Einzelprozesse und des physikalisch materialwissenschaftlichen Hintergrundes der Herstellung von Halbleiterbauelementen, integrierten Schaltkreisen, Sensor- und Mikrosystemen. Es werden Fähigkeiten vermittelt, die es ermöglichen, die einzelnen Prozessschritte in der Mikro- und Halbleitertechnologie hinsichtlich der physikalischen, chemischen und materialwissenschftlichen Grundlagen und ihrer Anwendbarkeit zu analysieren und zu bewerten.

The lecture course is based on the lecture course „Micro- and Semiconductor Technology 1“ were the fundamentals and practice of the silicon semiconductor technology are given. In the class „Micro- and Semiconductor Technology 2“ the knowledge in semiconductor technology will be extended to the field of wide band gap semiconductors (SiC and group III-Nitrides) continuously penetrating into the semiconductor market since the 90th of the last millennium. This material class extends or revolutionizes the application fields of semiconductor devices based on silicon, especially in optoelectronics, power electronics, high frequency electronics, homeland security and sensors, contributing to the development of a save and sustainable society. The lecture gives and in depth understanding of the physical, chemical and technical fundamentals of silicon carbide and group III-Nitride semiconductor processing technologies applied for the production of sensors, semiconductor devices, integrated circuits, and microelectromechanical systems. A special attempt will be given to carve out the differences and specific points in silicon carbide and III-nitride semiconductor technologies compared to silicon device processing. Furthermore, the operation principles of semiconductor devices relevant for the market as well as new devices concepts will be covered. The objective of the holistic, interdisciplinary knowledge transfer consists to empower the students to gather, analyse, develop and implement silicon carbide and group III-nitride technologies, applications and system solutions. They will be also able to carve out and to assess the advantages and disadvantages of wide band gap technologies and devices compared to silicon as well as to assess the market relevance of the new technologies.

(1) Introduction: Were Silicon can be beaten by other materials

(2) Properties of silicon carbide and group III-nitride materials

(3) Point defects in silicon carbide and group III-nitride materials

(4) Boule growth of silicon carbide and group III-nitride materials

(5) Epitaxy of silicon carbide and group III-nitride materials

(6) Heteroepitaxy of silicon carbide and group III-nitride materials

(7) Two dimensional electron gases in heterostructures of silicon carbide and group III-nitride materials

(8) Doping of silicon carbide and group III-nitride materials

(9) Etching silicon carbide and group III-nitride materials

(11) Ohmic contacts and metallisation issues in silicon carbide and group III-nitride materials

(10) Device technologies

(11) Highfrequency devices

(12) Power devices

(13) Sensors and special devices

(14) The world of polytype transitions

Folien, Powerpoint Präsentationen, Tafel

https://moodle2.tu-ilmenau.de/course/view.php?id=3574

[1] J.D. Plummer, M.D. Deal, P.B. Griffin, Silicon Technology: Fundamentals, Practice and Modelling, Prentice Hall, 2000. [2] U. Hilleringmann, Silizium - Halbleitertechnologie, B.G. Teubner, 1999. [3] D. Widmann, H. Mader, H. Friedrich, Technology of Integrated Circuits, Springer, 2000. [4] VLSI Technology, Ed. S.M. Sze, McGraw-Hill, 1988. [5] ULSI Technology, Ed. C.Y. Chang, S.M. Sze, McGraw-Hill, 1996. [6] I. Ruge, H. Mader, Halbleiter-Technologie, Springer, 1991. [7] U. Hilleringmann, Mikrosystemtechnik auf Silizium, B.G. Teubner, 1995.