Micro- and Semiconductor Technology 2 - Interaktive Studienpläne der TU Ilmenau
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| Modulinformationen zu Micro- and Semiconductor Technology 2 im Studiengang Master Micro- and Nanotechnologies 2021 | |
|---|---|
| Modulnummer | 200545 |
| Prüfungsnummer | 2100887 |
| Fakultät | Fakultät für Elektrotechnik und Informationstechnik |
| Fachgebietsnummer | 2142 (Nanotechnologie) |
| Modulverantwortliche(r) | Prof. Dr. Heiko Jacobs |
| Turnus | Sommersemester |
| Sprache | Englisch |
| Leistungspunkte | 5 |
| Präsenzstudium (h) | 45 |
| Selbststudium (h) | 105 |
| Verpflichtung | Wahlmodul |
| Abschluss | schriftliche Prüfungsleistung, 120 Minuten |
| Details zum Abschluss | |
| Link zum Moodle-Kurs | |
| Lehrende | Dr. Pezoldt |
| Anmeldemodalitäten für alternative PL oder SL | |
| max. Teilnehmerzahl | |
| Vorkenntnisse | Basic knowledge in physics, chemistry and physics in semiconductor devices and integrated circuits. Basic knowledge in silicon semiconductor device and integrated circuit processing technology. |
| Lernergebnisse und erworbene Kompetenzen | After attending the lectures, students can describe the individual processes steps and the physical background of materials science in the manufacturing of SiC and group III-Nitride semiconductor devices. They can explain the fabrication of semiconductor devices based on wide band gap semiconductors. After attending the course, students are able to develop strategies for new process steps in wide band gap semiconductor proessing technology. After attending the lecture, the student can summarize physical, chemical and material-scientific fundamentals and their applicability. After the seminar, the students deepened their knowledge gained in the lecture using selected examples. After the event students can correctly assess the trends in the field of SiC and grpup III-Nitrides microtechnology. |
| Inhalt |
The lecture course is based on the lecture course "Micro- and Semiconductor Technology 1" were the fundamentals and practice of the silicon semiconductor technology are given. In the class "Micro- and Semiconductor Technology 2" the knowledge in semiconductor technology will be extended to the field of wide band gap semiconductors (SiC and group III-Nitrides) continuously penetrating into the semiconductor market since the 90th of the last millennium. This material class extends or revolutionizes the application fields of semiconductor devices based on silicon, especially in optoelectronics, power electronics, high frequency electronics, homeland security and sensors, contributing to the development of a save and sustainable society. The lecture gives and in depth understanding of the physical, chemical and technical fundamentals of silicon carbide and group III-Nitride semiconductor processing technologies applied for the production of sensors, semiconductor devices, integrated circuits, and microelectromechanical systems. A special attempt will be given to carve out the differences and specific points in silicon carbide and III-nitride semiconductor technologies compared to silicon device processing. Furthermore, the operation principles of semiconductor devices relevant for the market as well as new devices concepts will be covered. The objective of the holistic, interdisciplinary knowledge transfer consists to empower the students to gather, analyse, develop and implement silicon carbide and group III-nitride technologies, applications and system solutions. They will be also able to carve out and to assess the advantages and disadvantages of wide band gap technologies and devices compared to silicon as well as to assess the market relevance of the new technologies. (1) Introduction: Were Silicon can be beaten by other materials (2) Properties of silicon carbide and group III-nitride materials (3) Point defects in silicon carbide and group III-nitride materials (4) Boule growth of silicon carbide and group III-nitride materials (5) Epitaxy of silicon carbide and group III-nitride materials (6) Heteroepitaxy of silicon carbide and group III-nitride materials (7) Two dimensional electron gases in heterostructures of silicon carbide and group III-nitride materials (8) Doping of silicon carbide and group III-nitride materials (9) Etching silicon carbide and group III-nitride materials (11) Ohmic contacts and metallisation issues in silicon carbide and group III-nitride materials (10) Device technologies (11) Highfrequency devices (12) Power devices (13) Sensors and special devices (14) The world of polytype transitions |
| Medienformen und technische Anforderungen bei Lehr- und Abschlussleistungen in elektronischer Form | MS Powerpoint, Transparencies, Blackboard |
| Literatur | 1. T. Kimoto, J.A. Cooper: Fundamentals of Silicon Carbide Technology, Wiley, 2014. 2. Process Technology for Silicon Carbide Devices, Ed. C.-M. Zetterling, IEE Inspec, 2002, 3. H. Morkoc: Handbook of Nitride Semiconductors and Devices, Vol. 1, Wiley.VCH, 2008. 4. H. Morkoc: Handbook of Nitride Semiconductors and Devices, Vol. 2, Wiley.VCH, 2008. 5. H. Morkoc: Handbook of Nitride Semiconductors and Devices, Vol. 3, Wiley.VCH, 2008. |
| Lehrevaluation | |