Lorenz, Pierre; Gutt, Richard; Schäfer, Jürgen A.; Krischok, Stefan
Oxidation of GaN(0001)-2×2 surfaces by oxygen and water. - In: 72nd annual meeting and DPG spring meeting of the Condensed Matter Section and the divisions: Physics Education, History of Physics, Radiation and Medical Physics as well as the working groups: Equal Opportunities, Industry and Business, Information, Physics and Disarmament, Physics of Socio-Economic Systems, Young DPG, 2008, HL 36.42
Oxidation of GaN(0001)-2×2 surfaces by oxygen and water. - In: 72nd annual meeting and DPG spring meeting of the Condensed Matter Section and the divisions: Physics Education, History of Physics, Radiation and Medical Physics as well as the working groups: Equal Opportunities, Industry and Business, Information, Physics and Disarmament, Physics of Socio-Economic Systems, Young DPG, 2008, HL 36.42
Hänsel, Thomas; Comouth, Andreas; Zydziak, Nicolas; Lorenz, Pierre; Ahmed, Syed Imad-Uddin; Krischok, Stefan; Kauffmann, Axel; Schäfer, Jürgen A.
Surface investigations of wood constituents and wood-based compounds. - In: 72nd annual meeting and DPG spring meeting of the Condensed Matter Section and the divisions: Physics Education, History of Physics, Radiation and Medical Physics as well as the working groups: Equal Opportunities, Industry and Business, Information, Physics and Disarmament, Physics of Socio-Economic Systems, Young DPG, 2008, O 55.77
Surface investigations of wood constituents and wood-based compounds. - In: 72nd annual meeting and DPG spring meeting of the Condensed Matter Section and the divisions: Physics Education, History of Physics, Radiation and Medical Physics as well as the working groups: Equal Opportunities, Industry and Business, Information, Physics and Disarmament, Physics of Socio-Economic Systems, Young DPG, 2008, O 55.77
Wang, Chunyu; Cimalla, Volker; Kups, Thomas; Ambacher, Oliver; Himmerlich, Marcel; Krischok, Stefan
Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD. - In: 2nd IEEE International Nanoelectronics Conference, 2008, ISBN 978-1-4244-1572-4, (2008), S. 489-492
http://dx.doi.org/10.1109/INEC.2008.4585534
Electrical and optical properties of In2O3 nanoparticles prepared by MOCVD. - In: 2nd IEEE International Nanoelectronics Conference, 2008, ISBN 978-1-4244-1572-4, (2008), S. 489-492
http://dx.doi.org/10.1109/INEC.2008.4585534
Himmerlich, Marcel; Yanev, Vasil; Opitz, Andreas; Ulbrich, Angela; Schäfer, Jürgen A.; Krischok, Stefan
Effects of X-ray radiation on the surface chemical composition of plasma deposited thin fluorocarbon films. - In: Polymer degradation and stability, Bd. 93 (2008), 3, S. 700-706
http://dx.doi.org/10.1016/j.polymdegradstab.2007.12.004
Effects of X-ray radiation on the surface chemical composition of plasma deposited thin fluorocarbon films. - In: Polymer degradation and stability, Bd. 93 (2008), 3, S. 700-706
http://dx.doi.org/10.1016/j.polymdegradstab.2007.12.004
Günster, Jens; Höfft, Oliver; Krischok, Stefan; Souda, Ryutaro
A time-of-flight secondary ion mass spectroscopy study of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide RT-ionic liquid. - In: Surface science, ISSN 1879-2758, Bd. 602 (2008), 21, S. 3403-3407
http://dx.doi.org/10.1016/j.susc.2008.09.018
A time-of-flight secondary ion mass spectroscopy study of 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide RT-ionic liquid. - In: Surface science, ISSN 1879-2758, Bd. 602 (2008), 21, S. 3403-3407
http://dx.doi.org/10.1016/j.susc.2008.09.018
Hums, Christopher; Bläsing, Jürgen; Witte, Hartmut; Hempel, Thomas; Dietz, Annette; Lorenz, Pierre; Krischok, Stefan; Schäfer, Jürgen A.; Christen, Jürgen; Krost, AloisGadanecz, Aniko; Gadanecz, Aniko *1982-*; Dadgar, Armin
MOVPE growth and characterization of AllnN FET structures on Si(1 1 1). - In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates, ISBN 978-1-605-11038-7, 2008, Kap. 1068-C04-03, insges. 6 S.
. - (Materials Research Society symposium proceedings ; 1068)
MOVPE growth and characterization of AllnN FET structures on Si(1 1 1). - In: Advances in GaN, GaAs, SiC and related alloys on silicon substrates, ISBN 978-1-605-11038-7, 2008, Kap. 1068-C04-03, insges. 6 S.
. - (Materials Research Society symposium proceedings ; 1068)
In this work metalorganic chemical vapor phase epitaxy (MOVPE) growth and characterization of AlInN in the whole compositional range and the impact on the development of field effects transistors (FET) structures will be presented. Due to the large difference in the lattice parameters of the binaries AlN and InN the growth of AlInN with high indium concentrations is ambitious, and first the growth conditions for the alloy will be discussed. An experimental phase diagram and corresponding theoretical calculations will be displayed. The critical layer thickness of AlInN on GaN has been experimentally determined. Relaxation of the AlInN-layer has a strong influence on the sample morphology. At indium concentration exceeding 30% an polarization induced hole gas is expected at the AlInN/GaN interface from theoretical calculations, but no p-channel conductivity could be confirmed. The absence of the two dimensional hole gas will be discussed.
Gutt, Richard; Lorenz, Pierre; Tonisch, Katja; Himmerlich, Marcel; Schäfer, Jürgen A.; Krischok, Stefan
Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE. - In: Physica status solidi, ISSN 1862-6270, Bd. 2 (2008), 5, S. 212-214
http://dx.doi.org/10.1002/pssr.200802146
Electronic structure of GaN(0001)-2 × 2 thin films grown by PAMBE. - In: Physica status solidi, ISSN 1862-6270, Bd. 2 (2008), 5, S. 212-214
http://dx.doi.org/10.1002/pssr.200802146
Lorenz, Pierre; Lebedev, Vadim; Niebelschütz, Florentina; Hauguth, Sindy; Ambacher, Oliver; Schäfer, Jürgen A.; Krischok, Stefan
Characterization of GaN-based lateral polarity heterostructures. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 1965-1967
http://dx.doi.org/10.1002/pssc.200778550
Characterization of GaN-based lateral polarity heterostructures. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 6, S. 1965-1967
http://dx.doi.org/10.1002/pssc.200778550
Lebedev, Vadim;
Wang, Chunyu; Hauguth, Sindy; Polyakov, Vladimir; Schwierz, Frank; Cimalla, Volker; Kups, Thomas; Morales Sánchez, Francisco Miguel; Lozano, Juan Gabriel; González, David; Himmerlich, Marcel; Schäfer, Jürgen A.; Krischok, Stefan; Ambacher, Oliver
Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 2, S. 495-498
https://doi.org/10.1002/pssc.200777455
Electron transport properties of indium oxide - indium nitride metal-oxide-semiconductor heterostructures. - In: Physica status solidi, ISSN 1610-1642, Bd. 5 (2008), 2, S. 495-498
https://doi.org/10.1002/pssc.200777455
Blank, Claudia; Krischok, Stefan; Gutt, Richard; Engel, Michael; Schäfer, Jürgen A.; Schawohl, Jens; Spieß, Lothar; Knedlik, Christian; Ecke, Gernot; Schrempel, Frank; Hüger, Erwin; Hildebrand, Gerhard; Liefeith, Klaus
Ion implanted titanium surfaces for hard tissue replacement :
Ionenimplantierte Titanoberflächen für den Hartgewebeersatz. - In: Biomaterialien, ISSN 2191-4672, Bd. 8 (2007), 4, S. 285-292
https://doi.org/10.1515/BIOMAT.2007.8.4.285
Ion implanted titanium surfaces for hard tissue replacement :
Ionenimplantierte Titanoberflächen für den Hartgewebeersatz. - In: Biomaterialien, ISSN 2191-4672, Bd. 8 (2007), 4, S. 285-292
https://doi.org/10.1515/BIOMAT.2007.8.4.285