Erscheinungsjahr 2021

Secondary ion mass spectroscopy, Fourier transformed infrared spectroscopy, ellipsometry, reflection high energy diffraction and transmission electron microscopy are used to gain inside into the effect of Ge on the formation of ultrathin 3C-SiC layers on Si(111) substrates. Accompanying the experimental investigations with simulations it is found that the ultrathin single crystalline 3C-SiC layer is formed on top of a gradient Si1-x-yGexCy buffer layer due to a complex alloying and alloy decomposition processes promoted by carbon and germanium interdiffusion and SiC nucleation. This approach allows tuning residual stress at very early growth stages as well as the interface properties of the 3C-SiC/Si heterostructure. Useful yields of secondary ions of Ge in Si matrix and Si dimer are estimated.

Well-established metal-catalyzed vapor-liquid-solid (VLS) growth represents still undoubtedly the key technology for bottom-up synthesis of single-crystalline silicon nanowires (SiNWs). Although various SiNW applications are demonstrated, electrical and optical properties are exposed to the inherent risk of electronic deep trap state formation by metal impurities. Therefore, metal catalyst-free growth strategies are intriguing. The oxid-assisted SiNW synthesis is explored and it is shown that contamination control is absolutely crucial. Slightest metal impurities, such as iron, are sufficient to trigger SiNW growth, calling into question true metal catalyst-free SiNW synthesis. Therefore, the term contamination-assisted is rather introduced and it is shown that contamination-assisted SiNW growth is determined by the chemical surface treatment (e.g., with KOH solution), but also by the crystal orientation of a silicon substrate. SiNWs are grown in this regards in a reproducible manner, but so far with a distinct tapering, using a conventional gas-phase reactor system at temperatures of about 680 ˚C and monosilane (SiH4) as the precursor gas. The synthesized SiNWs show convincing electrical properties compared to Au-catalyzed SiNWs. Nevertheless, contamination-assisted growth of SiNWs appears to be an important step toward bottom-up synthesis of high-quality SiNWs with a lower risk of metal poisoning, such as those needed for CMOS and other technologies.

Microbatteries (MBs) and microsupercapacitors (MSCs) are primary on-chip micropower sources that drive autonomous and stand-alone microelectronic devices for implementation of the Internet of Things (IoT). However, the performance of conventional MBs and MSCs is restricted by their 2D thin-film electrode design, and these devices struggle to satisfy the increasing IoT energy demands for high energy density, high power density, and long lifespan. The energy densities of MBs and MSCs can be improved significantly through adoption of a 2D thick-film electrode design; however, their power densities and lifespans deteriorate with increased electrode thickness. In contrast, 3D architecture electrodes offer remarkable opportunities to simultaneously improve MB and MSC energy density, power density, and lifespan. To date, various 3D architecture electrodes have been designed, fabricated, and investigated for MBs and MSCs. This review provides an update on the principal superiorities of 3D architecture electrodes over 2D thick-film electrodes in the context of improved MB and MSC energy density, power density, and lifespan. In addition, the most recent and representative progress in 3D architecture electrode development for MBs and MSCs is highlighted. Finally, present challenges are discussed and key perspectives for future research in this field are outlined.