Zeitschriftenaufsätze, Buchbeiträge

We present a systematic investigation of an SiO2 etching process using a standard fluorocarbon chemistry ICP-RIE etch tool with a cryogenically cooled electrode. Our goal is to enable the control of the SiO2 feature morphology, i.e., the sidewall angle, in order to add a degree of freedom for the design of resonant micro-/nanooptical elements. For such elements as e.g., whispering gallery mode resonators with specific mode profiles, it is essential to maintain low surface roughness. To this end, we investigate a variety of gas compositions. For statistical evaluation, we use a surface response methodology for several parameters and investigate the influence of the substrate temperature on the sidewall angle. Different hypotheses from the literature for the cause of non-anisotropic etch behavior are discussed for our specific case. Various investigations based on the prior hypothesis are presented, which provide more information about the pseudo-isotropic etch profile. Finally, we present two use cases: firstly, a classical anisotropic etch with a high aspect ratio and very low roughness (<1 nm), and secondly, an etch process for the fabrication of whispering gallery mode resonators that confine the light at the bottom of the resonator.

Focus-tunable lenses, e.g., liquid filled membrane lenses (MLs), have found increasingly widespread application in optical systems. If a large refractive power range is to be used, the correction of chromatic aberrations is particularly challenging: a group containing a single ML cannot be corrected over the whole refractive power range. In analogy to hybrid achromats for lenses with constant focal lengths, we present the combination of an ML and a diffractive Alvarez-Lohmann-lens (ALL) for the compensation of axial color over a large refractive power range. In contrast to the combination of multiple MLs, this does not increase the axial length of the system significantly. At the same time, the flexible adaption of the phase function of the diffractive ALL can reduce spherical aberration over the whole focal range. Design examples with ray-tracing and wave-optical simulations demonstrate the performance of the resulting hybrid tunable element. Experimental data from fabricated sample lenses provide a proof of principle.

It is well known that tunable lenses, with refractive power that can be varied, e.g., by changing the curvature of a membrane, can replace the motion of lens groups in zoom systems. Similar to classical zoom systems, the performance of these systems is heavily influenced by the fundamental first-order layout. Moreover, the first-order layout sets the most important requirements for the employed tunable lenses. In this contribution, we present a method for the analysis of a large number of possible first-order solutions for typical requirements and for the selection of the most promising layouts. The first-order solution space is mapped, allowing the layouts to be automatically filtered and plotted depending on pre-defined characteristics. Ray tracing of the marginal and chief rays combined with the traditional thin lens aberration theory provide efficient estimations of the expected installation space requirements and performance for each first-order layout. Using an example, we demonstrate good agreement between these estimations and the corresponding real lens layout, optimized by commercial raytracing software. The presented design method for zoom systems based on tunable lenses is compared with similar approaches for classical zoom lenses.

In this contribution we introduce new multilayer (bilayer and trilayer) resist systems for the generation of nanostructures with high aspect ratios of up to 14:1 on 4-in. full wafer scale. The bilayer stack consists of a bottom resist layer (lift off polymer LOR1A) and an UV-curable top resist layer (UV-NIL resist mr-NIL210 200 nm). The top resist is structured by UV-nanoimprint lithography with a soft polydimethysiloxane (PDMS) stamp (soft UV-NIL). After removal of the residual layer a wet chemical development is performed to achieve an isotropic undercut underneath the nanostructures in the top layer. This undercut is mandatory in order to perform a reliable and precise lift-off. The bilayer system is applicable on both silicon and fused silica. For a higher variety and combination of different resists, a trilayer system is investigated. A layer stack with new materials for bottom and top layer is presented. An intermediate layer made of silicon oxide by low temperature ICP-PECVD is added between a tailor-made top resist (mr-NIL213FC 200 nm) and an organic transfer layer (UL1). The intermediate layer serves as hard mask in order to etch the bottom layer isotropically utilizing a plasma etch process and thus replacing the wet-chemical development step. Subsequently, a thin metal layer is deposited onto the structured resist stack by electron beam evaporation. After lift-off, a nanostructured metal mask remains on the substrate providing a high selectivity during the following plasma etch step. A cryogenic ICPRIE etch process creates high aspect ratio nanostructures within the substrate. An aspect ratio of 14:1 was achieved.

Searching for the relationship between the nanostructure and optical properties has always been exciting the researchers in the field of optics (linear optics as well as non-linear optics), energy harvesting (anti-reflective Si solar cells, perovskite solar cells, ..., etc.), and industry (anti-reflection coating on car windows, sunglasses, etc.). In this work, we present an approach for nanostructuring the silicon substrate to silicon photonic crystals. By precisely controlling the etching time and etching path after using nanoimprint lithography, ordered arrays of inverted Si nanopyramids and Si nanopillars with good homogeneity, uniform surface roughness, high reproducibility of pattern transfer, and a controllable aspect ratio are prepared. Experimental investigation of the optical properties indicates that the reflections of these Si nanostructures are mainly determined by the aspect ratio as well as the period of nanostructures. Furthermore, we have experimentally observed visible-light scattering (V-LS) patterns on inverted Si nanopyramids and Si nanopillars, and their corresponding patterns can be precisely controlled by the patterned nanostructures. The V-LS pattern, background, and "ghost peaks" on the angle-resolved scattering results are caused by constructive interference, destructive interference, and the interference situation between both. This controllable nanopatterning on crystalline Si substrates with precisely tunable optical properties shows great potential for applications in many fields, for example, optics, electronics, and energy.