Raghavan, Nagarajan; Vasudevan, Krishna; Swarup, K. Shanthi; Ellinger, Thomas; Petzoldt, Jürgen
A new transformerless series hybrid active power filter (TL-SHAPF) topology. - In: International journal of energy technology and policy, ISSN 1741-508X, Bd. 4 (2006), 1/2, S. 126-141
http://dx.doi.org/10.1504/IJETP.2006.008545
A new transformerless series hybrid active power filter (TL-SHAPF) topology. - In: International journal of energy technology and policy, ISSN 1741-508X, Bd. 4 (2006), 1/2, S. 126-141
http://dx.doi.org/10.1504/IJETP.2006.008545
Yasin Dali, Mounzer; Rädel, Uwe; Ellinger, Thomas; Büttner, Jürgen; Petzoldt, Jürgen
Vergleich zweier Topologien von Windkraftanlagen auf der Basis einer permanenterregten Synchronmaschine sowie die Realisierung einer MPP-Regelung für das Gesamtsystem. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 12 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13684
Vergleich zweier Topologien von Windkraftanlagen auf der Basis einer permanenterregten Synchronmaschine sowie die Realisierung einer MPP-Regelung für das Gesamtsystem. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 12 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13684
Lalili, Djaafer; Berkouk, El Madjid; Boudjema, Fares; Yasin Dali, Mounzer; Petzoldt, Jürgen
A simplified space vector pulse with modulation (SVPWM) algorithm for diode clamoing five level inverter with DC-voltage balancing. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 10 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13758
A simplified space vector pulse with modulation (SVPWM) algorithm for diode clamoing five level inverter with DC-voltage balancing. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 10 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13758
Schwalbe, Ulf; Reimann, Tobias
Einsatz von SiC-Bauelementen in der elektronischen Stromversorgungstechnik. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13703
Einsatz von SiC-Bauelementen in der elektronischen Stromversorgungstechnik. - In: Information technology and electrical engineering - devices and systems, materials and technologies for the future, (2006), insges. 11 S.
http://www.db-thueringen.de/servlets/DocumentServlet?id=13703
Rupp, Roland; Treu, Michael; Voss, Stephan; Björk, Fanny; Reimann, Tobias
"2nd generation" SiC Schottky diodes: a new benchmark in SiC device ruggedness. - In: 2006 IEEE International Symposium on Power Semiconductor Devices & ICs, (2006), S. 269-272
"2nd generation" SiC Schottky diodes: a new benchmark in SiC device ruggedness. - In: 2006 IEEE International Symposium on Power Semiconductor Devices & ICs, (2006), S. 269-272
Tian, Jian;
Petzoldt, Jürgen; Reimann, Tobias; Scherf, Marko; Berger, Gotthard
Control system analysis and design of a resonant inverter with the variable frequency variable duty cycle scheme. - In: 37th IEEE Power Electronics Specialists Conference, 2006, PESC '06, (2006), insges. 5 S.
https://doi.org/10.1109/pesc.2006.1711829
Control system analysis and design of a resonant inverter with the variable frequency variable duty cycle scheme. - In: 37th IEEE Power Electronics Specialists Conference, 2006, PESC '06, (2006), insges. 5 S.
https://doi.org/10.1109/pesc.2006.1711829
Bjoerk, F.; Hancock, J.; Treu, M.; Rupp, Roland; Reimann, Tobias
2nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection. - In: Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006, APEC '06, (2006), insges. 4 S.
http://dx.doi.org/10.1109/APEC.2006.1620534
2nd generation 600V SiC Schottky diodes use merged pn/Schottky structure for surge overload protection. - In: Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006, APEC '06, (2006), insges. 4 S.
http://dx.doi.org/10.1109/APEC.2006.1620534
Friedrichs, Peter; Reimann, Tobias
Behavior of high voltage SiC VJFETs under avalanche conditions. - In: Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006, APEC '06, (2006), insges. 7 S.
http://dx.doi.org/10.1109/APEC.2006.1620767
Behavior of high voltage SiC VJFETs under avalanche conditions. - In: Twenty-First Annual IEEE Applied Power Electronics Conference and Exposition, 2006, APEC '06, (2006), insges. 7 S.
http://dx.doi.org/10.1109/APEC.2006.1620767
Treu, M.; Rupp, Roland; Tai, C. S.; Blaschitz, P.; Hilsenbeck, J.; Brunner, H.; Peters, D.; Elpelt, R.; Reimann, Tobias
A surge current stable and avalanche rugged SiC merged pn Schottky diode blocking 600 V especially suited for PFC applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1155-1158
A surge current stable and avalanche rugged SiC merged pn Schottky diode blocking 600 V especially suited for PFC applications. - In: Silicon carbide and related materials - 2005, (2006), S. 1155-1158
Schwalbe, Ulf; Deboy, Gerald; Friedrichs, Peter; Rupp, Roland
Systemvorteile durch SiC-Bauelemente in Schaltnetzteilapplikationen. - In: Bauelemente der Leistungselektronik und ihre Anwendungen, (2006), S. 119-130
Systemvorteile durch SiC-Bauelemente in Schaltnetzteilapplikationen. - In: Bauelemente der Leistungselektronik und ihre Anwendungen, (2006), S. 119-130