Maus, Christopher; Stauden, Thomas; Ecke, Gernot; Tonisch, Katja; Pezoldt, Jörg
Smooth ceramic titanium nitride contacts on AlGaN/GaN-heterostructures. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 27 (2012), 11, S. 115007, insges. 6 S.
http://dx.doi.org/10.1088/0268-1242/27/11/115007
Smooth ceramic titanium nitride contacts on AlGaN/GaN-heterostructures. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 27 (2012), 11, S. 115007, insges. 6 S.
http://dx.doi.org/10.1088/0268-1242/27/11/115007
Grieseler, Rolf;
Klaus, Jenny; Stubenrauch, Mike; Tonisch, Katja; Michael, Steffen; Pezoldt, Jörg; Schaaf, Peter
Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems. - In: The philosophical magazine: a journal of theoretical experimental and applied physics, ISSN 1941-5869, Bd. 92 (2012), 25/27, S. 3392-3401
https://doi.org/10.1080/14786435.2012.669074
Residual stress measurements and mechanical properties of AlN thin films as ultra-sensitive materials for nanoelectromechanical systems. - In: The philosophical magazine: a journal of theoretical experimental and applied physics, ISSN 1941-5869, Bd. 92 (2012), 25/27, S. 3392-3401
https://doi.org/10.1080/14786435.2012.669074
Eisenhardt, Anja; Himmerlich, Marcel; Lorenz, Pierre; Tonisch, Katja; Pezoldt, Jörg; Krischok, Stefan
Epitaxial growth and characterization of InN and GaN on C-face SiC(111)/Si(111). - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, HL 44.27
Epitaxial growth and characterization of InN and GaN on C-face SiC(111)/Si(111). - In: 75th Annual Meeting of the DPG and combined DPG Spring Meeting of the Condensed Matter Section and the Section AMOP, 2011, HL 44.27
Göckeritz, Robert; Tonisch, Katja; Jatal, Wael; Hiller, Lars; Schwierz, Frank; Pezoldt, Jörg
Side gate graphene and AlGaN/GaN unipolar nanoelectronic devices. - In: Advances in innovative materials and applications, (2011), S. 427-430
Side gate graphene and AlGaN/GaN unipolar nanoelectronic devices. - In: Advances in innovative materials and applications, (2011), S. 427-430
Tonisch, Katja; Jatal, Wael; Niebelschütz, Florentina; Romanus, Henry; Baumann, Uwe; Schwierz, Frank; Pezoldt, Jörg
AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications. - In: Thin solid films, ISSN 1879-2731, Bd. 520 (2011), 1, S. 491-496
http://dx.doi.org/10.1016/j.tsf.2011.07.003
AlGaN/GaN-heterostructures on (111) 3C-SiC/Si pseudo substrates for high frequency applications. - In: Thin solid films, ISSN 1879-2731, Bd. 520 (2011), 1, S. 491-496
http://dx.doi.org/10.1016/j.tsf.2011.07.003
Granzner, Ralf; Tschumak, Elena; Kittler, Mario; Tonisch, Katja; Jatal, Wael; Pezoldt, Jörg; As, Donat J.; Schwierz, Frank
Vertical design of cubic GaN-based high electron mobility transistors. - In: Journal of applied physics, ISSN 1089-7550, Bd. 110 (2011), 11, 114501, insges. 8 S.
https://doi.org/10.1063/1.3663364
Vertical design of cubic GaN-based high electron mobility transistors. - In: Journal of applied physics, ISSN 1089-7550, Bd. 110 (2011), 11, 114501, insges. 8 S.
https://doi.org/10.1063/1.3663364
Brückner, Klemens; Niebelschütz, Florentina; Tonisch, Katja; Förster, Christian; Cimalla, Volker; Stephan, Ralf; Pezoldt, Jörg; Stauden, Thomas; Ambacher, Oliver; Hein, Matthias A.
Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 208 (2011), 2, S. 357-376
http://dx.doi.org/10.1002/pssa.201026343
Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 208 (2011), 2, S. 357-376
http://dx.doi.org/10.1002/pssa.201026343
Skriniarov`a, J.; Novotn`y, I.; Tonisch, Katja; Schaaf, Peter
UV-source assisted GaN wet etching. - In: Programme and book of abstracts, ISBN 978-80-7399969-8, (2010), S. 61
UV-source assisted GaN wet etching. - In: Programme and book of abstracts, ISBN 978-80-7399969-8, (2010), S. 61
Cimalla, Volker; Röhlig, Claus-Christian; Lebedev, Vadim; Ambacher, Oliver; Tonisch, Katja; Niebelschütz, Florentina; Brückner, Klemens; Hein, Matthias
AlGaN/GaN based heterostructures for MEMS and NEMS applications. - In: Solid state phenomena, ISSN 1662-9779, Bd. 159 (2010), S. 27-38
http://dx.doi.org/10.4028/www.scientific.net/SSP.159.27
AlGaN/GaN based heterostructures for MEMS and NEMS applications. - In: Solid state phenomena, ISSN 1662-9779, Bd. 159 (2010), S. 27-38
http://dx.doi.org/10.4028/www.scientific.net/SSP.159.27
Röhlig, Claus-Christian; Niebelschütz, Merten; Brückner, Klemens; Tonisch, Katja; Ambacher, Oliver; Cimalla, Volker
Elastic properties of nanowires. - In: Physica status solidi, ISSN 1521-3951, Bd. 247 (2010), 10, S. 2557-2570
http://dx.doi.org/10.1002/pssb.201046378
Elastic properties of nanowires. - In: Physica status solidi, ISSN 1521-3951, Bd. 247 (2010), 10, S. 2557-2570
http://dx.doi.org/10.1002/pssb.201046378