Al-Ibrahim, Maher; Ambacher, Oliver; Sensfuss, Steffi; Gobsch, Gerhard
Effects of solvent and annealing on the improves performance of solar cells based on poly(3-hexylthiophene): fullerene. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 20, S. 201120, insges. 3 S.
http://dx.doi.org/10.1063/1.1929875
Effects of solvent and annealing on the improves performance of solar cells based on poly(3-hexylthiophene): fullerene. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 20, S. 201120, insges. 3 S.
http://dx.doi.org/10.1063/1.1929875
Shokhovets, Sviatoslav; Gobsch, Gerhard; Ambacher, Oliver
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 16, S. 161908, insges. 3 S.
http://dx.doi.org/10.1063/1.1906313
Momentum matrix element and conduction band nonparabolicity in wurtzite GaN. - In: Applied physics letters, ISSN 1077-3118, Bd. 86 (2005), 16, S. 161908, insges. 3 S.
http://dx.doi.org/10.1063/1.1906313
Al-Ibrahim, Maher; Roth, Hans-Klaus; Schrödner, Mario; Konkin, Alexander; Zhokhavets, Uladzimir; Gobsch, Gerhard; Scharff, Peter; Sensfuss, Steffi
The influence of the optoelectronic properties of poly(3-alkylthiophenes) on the device parameters in flexible polymer solar cells. - In: Organic electronics, Bd. 6 (2005), 2, S. 65-77
http://dx.doi.org/10.1016/j.orgel.2005.02.004
The influence of the optoelectronic properties of poly(3-alkylthiophenes) on the device parameters in flexible polymer solar cells. - In: Organic electronics, Bd. 6 (2005), 2, S. 65-77
http://dx.doi.org/10.1016/j.orgel.2005.02.004
Shokhovets, Sviatoslav; Fuhrmann, Daniel; Goldhahn, Rüdiger; Gobsch, Gerhard; Ambacher, Oliver; Hermann, Martin; Eickhoff, Martin
Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance. - In: Thin solid films, ISSN 1879-2731, Bd. 450 (2004), 1, S. 163-166
http://dx.doi.org/10.1016/j.tsf.2003.10.064
Temperature-dependent electric fields in GaN Schottky diodes studied by electroreflectance. - In: Thin solid films, ISSN 1879-2731, Bd. 450 (2004), 1, S. 163-166
http://dx.doi.org/10.1016/j.tsf.2003.10.064
Buchheim, Carsten; Winzer, Andreas T.; Goldhahn, Rüdiger; Gobsch, Gerhard; Ambacher, Oliver; Link, Angela; Eickhoff, Martin; Stutzmann, Martin
Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures. - In: Thin solid films, ISSN 1879-2731, Bd. 450 (2004), 1, S. 155-158
http://dx.doi.org/10.1016/j.tsf.2003.10.062
Photoreflectance studies of (Al)Ga- and N-face AlGaN/GaN heterostructures. - In: Thin solid films, ISSN 1879-2731, Bd. 450 (2004), 1, S. 155-158
http://dx.doi.org/10.1016/j.tsf.2003.10.062
Bähr, M.; Dauwe, S.; Mittelstädt, L.; Schmidt, Jan; Gobsch, Gerhard
Surface passivation and contact resistance on various emitters of screen-printed crystalline silicon solar cells. - In: Nineteenth European Photovoltaic Solar Energy Conference, (2004), S. 955-958
Surface passivation and contact resistance on various emitters of screen-printed crystalline silicon solar cells. - In: Nineteenth European Photovoltaic Solar Energy Conference, (2004), S. 955-958
Arndt, Christian; Zhokhavets, Uladzimir; Mohr, Martina; Gobsch, Gerhard; Al-Ibrahim, Maher; Sensfuss, Steffi
Determination of polaron lifetime and mobility in a polymer/fullerene solar cell by means of photoinduced absorption. - In: Synthetic metals, Bd. 147 (2004), 1/3, S. 257-260
http://dx.doi.org/10.1016/j.synthmet.2004.06.037
Determination of polaron lifetime and mobility in a polymer/fullerene solar cell by means of photoinduced absorption. - In: Synthetic metals, Bd. 147 (2004), 1/3, S. 257-260
http://dx.doi.org/10.1016/j.synthmet.2004.06.037
Becker, Hans W.; Schley, Pascal; Schmidt, Frank; Sobel, Frank; Renno, Markus; Olschewski, Nathalie; Seitz, Holger; Buttgereit, Ute; Knapp, Konrad; Hess, Guenter
New solutions for inspection contrast tuning, enhanced chemical durability, and a new ultrahigh-transmission PSM. - In: 24th Annual BACUS Symposium on Photomask Technology, (2004), S. 659-668
New solutions for inspection contrast tuning, enhanced chemical durability, and a new ultrahigh-transmission PSM. - In: 24th Annual BACUS Symposium on Photomask Technology, (2004), S. 659-668
Goldhahn, Rüdiger; Cimalla, Volker; Ambacher, Oliver; Cobet, Christoph; Richter, Wolfgang; Esser, Norbert; Lu, Hai; Schaff, William J.
Anisotropy of the dielectric function for hexagonal InN. - 3 S. = 758,9 KB, TextCD-ROM-Ausg.: Highlights / Annual report 2003 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. - Berlin : BESSY, 2004, S. 377-379
http://www.db-thueringen.de/servlets/DocumentServlet?id=6252
Anisotropy of the dielectric function for hexagonal InN. - 3 S. = 758,9 KB, TextCD-ROM-Ausg.: Highlights / Annual report 2003 // Berliner Elektronenspeicherring-Gesellschaft für Synchrotronstrahlung m.b.H. - Berlin : BESSY, 2004, S. 377-379
http://www.db-thueringen.de/servlets/DocumentServlet?id=6252
Metzner, Heinrich; Eberhardt, Jens; Cieslak, Janko; Hahn, Thomas; Goldhahn, Rüdiger; Reislöhner, Udo; Witthuhn, Wolfgang
Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levels. - In: Thin solid films, ISSN 1879-2731, Bd. 451/452 (2004), S. 241-244
http://dx.doi.org/10.1016/j.tsf.2003.10.120
Photoluminescence of epitaxial CuGaS2 on Si(111): model for intrinsic defect levels. - In: Thin solid films, ISSN 1879-2731, Bd. 451/452 (2004), S. 241-244
http://dx.doi.org/10.1016/j.tsf.2003.10.120