Winzer, Andreas T.; Goldhahn, Rüdiger; Buchheim, Carsten; Gobsch, Gerhard; Ambacher, Oliver; Link, Angela; Eickhoff, Martin; Stutzmann, Martin
Photoreflectance studies of Ga- and N-face AIGaN/GaN heterostructures confining a polarization induced 2DEG. - In: Proceedings and our portrait, (2003), insges. 2 S.
Photoreflectance studies of Ga- and N-face AIGaN/GaN heterostructures confining a polarization induced 2DEG. - In: Proceedings and our portrait, (2003), insges. 2 S.
Zhokhavets, Uladzimir; Goldhahn, Rüdiger; Gobsch, Gerhard; Schliefke, Willy
Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene). - In: Synthetic metals, Bd. 138 (2003), 3, S. 491-495
http://dx.doi.org/10.1016/S0379-6779(02)00502-7
Dielectric function and one-dimensional description of the absorption of poly(3-octylthiophene). - In: Synthetic metals, Bd. 138 (2003), 3, S. 491-495
http://dx.doi.org/10.1016/S0379-6779(02)00502-7
Rossow, Uwe; Fuhrmann, Daniel; Greve, M.; Winzer, Andreas T.; Goldhahn, Rüdiger; Ambacher, Oliver; Link, Angela; Stutzmann, Martin
Role of growth on the electronic performance of 2DEGs confined in AIGaN/GaN heterostructures. - In: Informations- und Elektrotechnik - Werkstoffe, Bauelemente, Systeme und Technologien für die Zukunft, (2003), S. 197-198
Role of growth on the electronic performance of 2DEGs confined in AIGaN/GaN heterostructures. - In: Informations- und Elektrotechnik - Werkstoffe, Bauelemente, Systeme und Technologien für die Zukunft, (2003), S. 197-198
Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Gobsch, Gerhard
Study of the linear electro-optic effect in [alpha]-GaN by electroreflectance. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 93 (2002), 1/3, S. 215-218
http://dx.doi.org/10.1016/S0921-5107(02)00031-4
Study of the linear electro-optic effect in [alpha]-GaN by electroreflectance. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 93 (2002), 1/3, S. 215-218
http://dx.doi.org/10.1016/S0921-5107(02)00031-4
Shokhovets, Sviatoslav; Fuhrmann, Daniel; Goldhahn, Rüdiger; Gobsch, Gerhard; Ambacher, Oliver; Hermann, Martin; Karrer, Uwe
Study of exciton dead layers in GaN Schottky diodes with N and Ga-face polarity. - In: Physica status solidi, ISSN 1862-6319, Bd. 194 (2002), 2, S. 480-484
http://dx.doi.org/10.1002/1521-396X(200212)194:2<480::AID-PSSA480>3.0.CO;2-J
Study of exciton dead layers in GaN Schottky diodes with N and Ga-face polarity. - In: Physica status solidi, ISSN 1862-6319, Bd. 194 (2002), 2, S. 480-484
http://dx.doi.org/10.1002/1521-396X(200212)194:2<480::AID-PSSA480>3.0.CO;2-J
Winzer, Andreas T.; Goldhahn, Rüdiger; Gobsch, Gerhard; Heidemeyer, H.; Schmidt, O. G.; Eberl, K.
Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures. - In: Physica, ISSN 1386-9477, Bd. 13 (2002), 2/4, S. 289-292
http://dx.doi.org/10.1016/S1386-9477(01)00539-2
Optical properties of wetting layers in stacked InAs/GaAs quantum dot structures. - In: Physica, ISSN 1386-9477, Bd. 13 (2002), 2/4, S. 289-292
http://dx.doi.org/10.1016/S1386-9477(01)00539-2
Bumai, Yu. A.; Gobsch, Gerhard; Goldhahn, Rüdiger; Stein, Norbert; Golombek, A.; Nakov, Valentin; Cheng, T. S.
Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma. - In: Semiconductors, ISSN 1090-6479, Bd. 36 (2002), 2, S. 203-207
http://dx.doi.org/10.1134/1.1453439
Photoluminescence of anti-modulation-doped GaAs/AlGaAs single quantum well structures exposed to hydrogen plasma. - In: Semiconductors, ISSN 1090-6479, Bd. 36 (2002), 2, S. 203-207
http://dx.doi.org/10.1134/1.1453439
Metzner, Heinrich; Hahn, Thomas; Cieslak, Janko; Grossner, Ulrike; Reislöhner, Udo; Witthuhn, Wolfgang; Goldhahn, Rüdiger; Eberhardt, Jens; Gobsch, Gerhard; Kräußlich, Jürgen
Epitaxial growth of CuGaS2 on Si(111). - In: Applied physics letters, ISSN 1077-3118, Bd. 81 (2002), 1, S. 156-158
http://dx.doi.org/10.1063/1.1492003
Epitaxial growth of CuGaS2 on Si(111). - In: Applied physics letters, ISSN 1077-3118, Bd. 81 (2002), 1, S. 156-158
http://dx.doi.org/10.1063/1.1492003
Goldhahn, Rüdiger; Shokhovets, Sviatoslav
Optical constants of III-nitrides - experiments. - In: III-nitride semiconductors, (2002), S. 73-113
Optical constants of III-nitrides - experiments. - In: III-nitride semiconductors, (2002), S. 73-113
Goldhahn, Rüdiger; Buchheim, Carsten; Žochovec, Svjatoslav; Gobsch, Gerhard; Ambacher, Oliver; Link, Angela; Hermann, Martin; Stutzmann, Martin; Smorchkova, Y.; Mishra, Umesh K.; Speck, James S.
Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG. - In: Physica status solidi, ISSN 0370-1972, Bd. 234 (2002), 3, S. 713-716
Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG. - In: Physica status solidi, ISSN 0370-1972, Bd. 234 (2002), 3, S. 713-716