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AES study of thermally treated GeO 2 /(111)GaAs structures. - In: CAS 2001 proceedings, (2001), S. 327-330
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Optical properties of MBE grown cubic AlGaN epilayers and AlGaN/GaN quantum well structures. - In: GaN and related alloys - 2000, 2001, G5.9, insges. 6 S.
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Characterization and application of multilayer diffraction gratings as optochemical sensors. - In: Sensors and actuators. Physical. - Amsterdam [u.a.] : Elsevier Science, 1990- , ISSN: 1873-3069 , ZDB-ID: 1500729-7, ISSN 1873-3069, Bd. 88 (2001), 1, S. 52-57
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Photoluminescence decay time measurements from self-organized InAs/GaAs quantum dots grown on misoriented substrates. - In: Nanotechnology, ISSN 1361-6528, Bd. 12 (2001), 4, S. 512-514
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Multilayer diffraction gratings Al/GaAs as polaritonic photodetectors. - In: Physica status solidi, ISSN 1862-6319, Bd. 184 (2001), 1, S. 165-174
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Carbonization induced change of the polarity for MBE grown 3C-SiC/Si(111). - In: Silicon carbide and related materials, (2001), S. 179-182
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MBE growth of cubic Al y Ga 1-y N/GaN heterostructures - structural, vibrational and optical properties. - In: Journal of crystal growth, Bd. 230 (2001), 3/4, S. 421-425
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