Goldhahn, Rüdiger; Shokhovets, Sviatoslav; Scheiner, Jörg; Gobsch, Gerhard; Cheng, T. S.; Foxon, C. Thomas; Kaiser, U.; Kipshidze, G. D.; Richter, W.
Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies. - In: Physica status solidi, ISSN 1862-6319, Bd. 177 (2000), 1, S. 107-115
http://dx.doi.org/10.1002/(SICI)1521-396X(200001)177:1<107::AID-PSSA107>3.0.CO;2-8
Determination of group III nitride film properties by reflectance and spectroscopic ellipsometry studies. - In: Physica status solidi, ISSN 1862-6319, Bd. 177 (2000), 1, S. 107-115
http://dx.doi.org/10.1002/(SICI)1521-396X(200001)177:1<107::AID-PSSA107>3.0.CO;2-8
As, Donat J.; Frey, T.; Schikora, D.; Lischka, Klaus; Cimalla, Volker; Pezoldt, Jörg; Goldhahn, Rüdiger; Kaiser, S.; Gebhardt, W.
Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 13, S. 1686-1688
http://dx.doi.org/10.1063/1.126136
Cubic GaN epilayers grown by molecular beam epitaxy on thin beta-SiC/Si (001) substrates. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 13, S. 1686-1688
http://dx.doi.org/10.1063/1.126136
Goldhahn, Rüdiger; Scheiner, Jörg; Shokhovets, Sviatoslav; Frey, T.; Köhler, U.; As, Donat J.; Lischka, Klaus
Refractive index and gap energy of cubic InxGa1xN. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 3, S. 291-293
http://dx.doi.org/10.1063/1.125725
Refractive index and gap energy of cubic InxGa1xN. - In: Applied physics letters, ISSN 1077-3118, Bd. 76 (2000), 3, S. 291-293
http://dx.doi.org/10.1063/1.125725
Golombek, Achim; Goldhahn, Rüdiger; Gobsch, Gerhard
Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures. - In: In-plane semiconductor lasers III, (1999), S. 243-250
Electro-optical investigations of strained InGaAs/GaAs double quantum well laser structures. - In: In-plane semiconductor lasers III, (1999), S. 243-250
Scheiner, Jörg; Goldhahn, Rüdiger; Cimalla, Volker; Ecke, Gernot; Attenberger, Wilfried; Lindner, Jörg K. M.; Gobsch, Gerhard; Pezoldt, Jörg
Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 526-530
http://dx.doi.org/10.1016/S0921-5107(98)00466-8
Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 526-530
http://dx.doi.org/10.1016/S0921-5107(98)00466-8
Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Gobsch, Gerhard; Cheng, T. S.; Foxon, C. Thomas
Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 59 (1999), 1/3, S. 69-72
http://dx.doi.org/10.1016/S0921-5107(98)00366-3
Optical characterisation of interface properties for hexagonal GaN grown by MBE on GaAs. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 59 (1999), 1/3, S. 69-72
http://dx.doi.org/10.1016/S0921-5107(98)00366-3
Köhler, U.; As, Donat J.; Schöttker, B.; Frey, T.; Lischka, Klaus; Scheiner, Jörg; Žochovec, Svjatoslav; Goldhahn, Rüdiger
Optical constants of cubic GaN in the energy range of 1.53.7 eV. - In: Journal of applied physics, ISSN 1089-7550, Bd. 85 (1999), 1, 404-407
https://doi.org/10.1063/1.369398
Optical constants of cubic GaN in the energy range of 1.53.7 eV. - In: Journal of applied physics, ISSN 1089-7550, Bd. 85 (1999), 1, 404-407
https://doi.org/10.1063/1.369398
Schenk, H. P. D.; Kipshidze, G. D.; Lebedev, Vadim B.; Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Kräußlich, Jürgen; Fissel, A.; Richter, Wo.
Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy. - In: Journal of crystal growth, Bd. 201/202 (1999), S. 359-364
http://dx.doi.org/10.1016/S0022-0248(98)01353-0
Epitaxial growth of AlN and GaN on Si(1 1 1) by plasma-assisted molecular beam epitaxy. - In: Journal of crystal growth, Bd. 201/202 (1999), S. 359-364
http://dx.doi.org/10.1016/S0022-0248(98)01353-0
Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Cheng, T. S.; Foxon, C. Thomas
Optical study of the [alpha]-GaN/GaAs interface properties as a function of MBE growth conditions. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 14 (1999), 2, S. 181-186
http://dx.doi.org/10.1088/0268-1242/14/2/013
Optical study of the [alpha]-GaN/GaAs interface properties as a function of MBE growth conditions. - In: Semiconductor science and technology, ISSN 1361-6641, Bd. 14 (1999), 2, S. 181-186
http://dx.doi.org/10.1088/0268-1242/14/2/013
Goldhahn, Rüdiger; Scheiner, Jörg; Shokhovets, Sviatoslav; Frey, T.; Köhler, U.; As, Donat J.; Lischka, Klaus
Determination of optical constants for cubic In x Ga 1-x N layers. - In: Physica status solidi, ISSN 1521-3951, Bd. 216 (1999), 1, S. 265-268
http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<265::AID-PSSB265>3.0.CO;2-K
Determination of optical constants for cubic In x Ga 1-x N layers. - In: Physica status solidi, ISSN 1521-3951, Bd. 216 (1999), 1, S. 265-268
http://dx.doi.org/10.1002/(SICI)1521-3951(199911)216:1<265::AID-PSSB265>3.0.CO;2-K