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Univ.-Prof. Dr.-Ing. habil. Kai-Uwe Sattler
President
Tel. +49 3677 69-5001
Ernst-Abbe-Zentrum, Ehrenbergstraße 29
Zi. 3322
Device | SSMBE system UMS 500 (Balzers AG). |
Module1 | Plasma Cleaning and UHVCVD Module (PCCM) with low energy Ar/H2 plasma for substrate cleaning and plasma enhanced CVD. |
Gases | silane, ethene, hydrogen, argon, nitrogen |
Substrate | diameter up to 100mm, temperature up to 1200°C |
Pressure | in the process chamber < 5E-9 mbar |
Module2 | Molecular beam epitaxy chamber for growth of group III nitrides and silicon carbide |
Sources | 2 electron beam evaporators (6kW each) for carbon and silicon or germanium, 3 effusion cells for gallium, aluminium and germanium, nitrogen plasma source Oxford HD25, gas inlet for hydrocarbons, rate control via quadrupole MS |
Substrate | diameter up to 100mm,temperature up to 1300°C. |
Pressure | in the process chamber < 5E-11 mbar |
Analytics | 35kV RHEED system with ER-RHEED analyzer and in situ spectral ellipsometer |
Device | Auger electron spectrometer Microlab 350 |
Electron beam | Energy up to 25keV |
Lateral resolution | 7nm SEM, < 12nm SAM |
Angle of bombardment | 0°...60°, gridable |
Analyzer | hemispherical analyzer |
Energy resolution | 0.02 %-2 %. |
Ion beam | Ar+ ions |
Energy | 0.3...5keV |
Angle of bombardment | 45°...75° in steps |
Vacuum system | UHV system with ion getter pump, sample lock |
Preparation | in situ sample heating (approx. 950°C), in situ sample cooling (approx. -100°C), compucent rotation extensive evaluation software (LLS, NLLS, TFA) |
Unit | AIX 200; AIX 200RF |
System | two reactors operating in parallel with separate gas supply and exhaust systems |
Wafer size | 2" substrates, gas foil rotation system |
Handling | Glovebox |
Purity | gas filter, Pd cell for H2 |
Safety | safety system, gas detection |
Sources | for nitrides --> MO sources for growth (TMGa, TMAI, TEGa, TMIn), MO sources for doping (CP2Mg), Scruber for NH3 |
for oxides --> MO sources for growth (tert-butanol, DMZN), MO sources for doping (DEGa) | |
Carrier gas | H2, N2, NH3, SiH4 in H2 |
heating | for nitrides --> HF-heating, 2 colors pyrometer, for oxides --> IR-heating |
Device | Multiplex ICP |
Process chamber | Al- process chamber |
Substrate | 1x4" |
Substrate electrode | Al- electrode with water cooling for RIE incl. thermostat, thermal coupling to substrate with He gas |
ICP source | 13.56 MHz, 1000 W |
RIE source | 13.56 MHz, 300 W |
Gas supply | 6 regulated gas lines (Cl2, BCl3, H2, O2, Ar, C2H4) |
Pumping system for corrosive gases | turbomolecular pump 900l/s, rotary vane pump 80m3/h |
Vacuum lock | manual loading |
Control system | PC, Windows 2000 |
Device | Raith 150 |
Accelerating voltage | 0.2...30kV in 10 V steps, switching time < 30min |
Cathode | Thermal field emission cathode |
Beam diameter | 4nm at 1kV, 2nm at 20kV |
Beam current stability | < 0.5% in 1h |
Beam drift | < 50nm/h |
Beam current | 4pA to 10nA discrete beam current setting |
Write mode | Stop & Go, Pixel Lines, Vector Scan, Mix & Match |
write speed | 10 MHz...125Hz, 5 MHz random pixel addressing |
Sample size | 50...150mm2 |
sample thickness | 2...12 mm |
Sample pieces | yes, max. 800µm2 |
Device | D8 DISCOVER high resolution X-ray diffractometer |
X-ray generator | X-ray tube with Cu-anode, maximum power 3000W, voltage and current from 10 to 60kV and from 2-80 mA continuously adjustable |
detector | scintillation counter, lin. count rate up to 2x10E6 lmp/sec |
Equipment | 2-circle goniometer, 1/4-circle Euler cradle, Göbel mirror and monochromator for a highly parallel primary beam; Kß radiation is suppressed |
Software | DIFFRAC plus software for real-time data collection and display, comprehensive evaluation software |
Device | Varian Cary 5000 |
Spectral range | 175 to 3300nm |
Equipment | double beam spectrophotometer with double monochromator, photomultiplier for UV-Vis range, Pbs detector for NIR range |
Accessories | total fluorescence accessory, automated double aperature accessory, VW specular reflectance accessory, near-normal incidence specular reflection attachment, internal diffuse reflectance accessory, fiber optic adapter |
Applications | Absorption/transmission and reflection measurements of solid and liquid samples |
Device | Desorption measuring station (self-made) |
Equipment | Pumping station with turbomolecular pump, quadrupole mass spectrometer QME 200, 2 quartz reactors, inner diameter 7 mm and 27 mm, programmable heater up to 1050°C |
Application | Residual gas analysis |
Determination of thermal stability of materials | |
Temperature Programmed Desorption (TPD) | |
Temperature dependent electrical measurements in vacuum |
Instrument | Sentech SE 900 FT-IR ellipsometer |
Instrument type | ex situ spectral ellipsometer |
Spectral range | 2.5 to 25 µm |
Applications | Coating thickness measurements |
determination of optical constants | |
charge carrier concentrations and mobilities | |
charge carrier distributions, | |
measurement of phonons and strains | |
determination of material compositions, polymer analysis |
Instrument | Sentech SE 801 |
Instrument type | in situ spectral ellipsometer |
Spectral range | 250 to 850 nm |
Applications | Coating thickness measurement |
monitoring of growth processes | |
Determination of the temperature dependence of optical constants | |
analysis of surfaces and interface roughnesses | |
Determination of material composition |
Equipment | ECR plasma system PLS 500 (Pfeiffer) for LPPECVD and plasma etching |
Vacuum system | Universal rectangular recipient with 1600 l/s, turbo and rotary vane backing pump, Drosel valve to reduce pumping speed |
Process technology | 800 Watt ECR source RR160, (Roth&Rau Anlagentechnik), DC bias |
Substrate | substrate size up to 100mm |
Substrate heating | up to 600°C |
Gas | Ar, O2, H2, C2 H4, NH3, CF4, CHF3 , SF6 |
Application | Plasma etching of SiC, use as PECVD system possible, (Diamond like Carbon, Si3N4, AlN ) |
Device | AM 1.5 measuring station |
Equipment | Solar simulator Solar Celltest 575 of the company KHS |
Voltage source | Type HP6633A Programmable Electrometer Type 617 of the company Keithley |
Application | Automatic recording of IV-characteristics under sun-like illumination, contacting from the irradiation side as well as from the opposite side possible. |
Equipment | PC-controlled photothermal deflection spectroscopy (self-made) |
Equipment | Halogen and Xenon lamp, (300 - 2500 nm and 200 - 600 nm respectively) |
Monochromator type laser | 632 nm, 10 mW |
Electrical measuring technique | Lock-in amplifier, programmable current-voltage source |
Application | Absorption behavior of thin films from near infrared to ultraviolet using Photothermal Deflection Spectroscopy (PDS), Spectral Photoconductivity and Constant Photocurrent Method (CPM) |
Device | Solver SNOM (NTMDT) on Olympus IX 70 |
sample size | 30 x 30 mm² |
Scan area | 100 x 100 µm² with 2 nm resolution |
Measurement modes | Shear Force, Transmission, Reflection |
Laser | He-Cd laser 15 mW with 325 nm laser line |
Optical detector | PMT, Hamamatsu (H5784-04) 185 - 850 nm, vibration damped table with lightproof cover |
Device | Atos Solver Pro (NT-MDT) |
sample size | up to 100x200mm or unlimited when using the measuring head without setup (stand alone operation) |
adjustment area piezo scanner | 100x100x8µm |
Min. scanning step | 0.01nm; 0.006nm; 0.0015nm |
environment | measurement in air or liquids possible |
Measuring modes | contact, non-contact, tapping mode |
Special modes | Kelvin Probe (KPFM), capacitive or electrostatic (CFM), magnetic WW (MFM), spectroscopy (force-displacement, current-voltage etc.) |
Camera optics | resolution NA, magnification with CCD, lateral field of view 3µm, 0,1, 47x to 578x, 6,1 (2) to 0,49mm |
XY sample positioning | 5x5mm |
Sample heating | 130°C |
Temperature stability | 0.1°C |
Power supply | 90-240V, 50-60Hz |
Power | 60W |