Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Gobsch, Gerhard; Ambacher, Oliver; Smorchkova, I. P.; Speck, James S.; Mishra, Umesh; Link, Angela; Hermann, Martin; Eickhoff, Martin
Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures. - In: GaN and related alloys - 2002, 2003, S. L3.57.1-L3.57.6, insges. 6 S.
Electroreflectance and photoreflectance studies of electric fields in Pt/GaN Schottky diodes and AlGaN/GaN heterostructures. - In: GaN and related alloys - 2002, 2003, S. L3.57.1-L3.57.6, insges. 6 S.
Goldhahn, Rüdiger; Žochovec, Svjatoslav; Cimalla, Volker; Spieß, Lothar; Ecke, Gernot; Ambacher, Oliver; Furthmüller, Jürgen; Bechstedt, Friedhelm; Lu, Hai; Schaff, William J.
Dielectric function of "narrow" band gap InN. - In: GaN and related alloys - 2002, 2003, S. L5.9.1-L5.9.6, insges. 6 S.
Dielectric function of "narrow" band gap InN. - In: GaN and related alloys - 2002, 2003, S. L5.9.1-L5.9.6, insges. 6 S.
Eberhardt, Jens; Metzner, Heinrich; Hahn, Thomas; Reislöhner, Udo; Cieslak, Janko; Grossner, Ulrike; Goldhahn, Rüdiger; Hudert, Florian; Gobsch, Gerhard; Witthuhn, Wolfgang
Optical properties of epitaxial CuGaS 2 layers on Si(111). - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1781-1785
http://dx.doi.org/10.1016/S0022-3697(03)00199-9
Optical properties of epitaxial CuGaS 2 layers on Si(111). - In: Journal of physics and chemistry of solids, Bd. 64 (2003), 9/10, S. 1781-1785
http://dx.doi.org/10.1016/S0022-3697(03)00199-9
Metzner, Heinrich; Cieslak, Janko; Eberhardt, Jens; Hahn, Thomas; Müller, M.; Kaiser, U.; Chuvilin, Andrey; Reislöhner, Udo; Witthuhn, Wolfgang; Goldhahn, Rüdiger
Epitaxial CuIn (1-x) Ga x S 2 on Si(111): a perfectly lattice-matched system for x[approximate]0.5. - In: Applied physics letters, ISSN 1077-3118, Bd. 83 (2003), 8, S. 1563-1565
http://dx.doi.org/10.1063/1.1605239
Epitaxial CuIn (1-x) Ga x S 2 on Si(111): a perfectly lattice-matched system for x[approximate]0.5. - In: Applied physics letters, ISSN 1077-3118, Bd. 83 (2003), 8, S. 1563-1565
http://dx.doi.org/10.1063/1.1605239
Metzner, Heinrich; Cieslak, Janko; Grossner, Ulrike; Hahn, Thomas; Kaiser, U.; Kräußlich, Jürgen; Reislöhner, Udo; Witthuhn, Wolfgang; Goldhahn, Rüdiger; Eberhardt, Jens
Structural and optical properties of epitaxial CuGaS2 films on Si substrates. - In: Thin solid films, ISSN 1879-2731, Bd. 431/432 (2003), S. 219-222
http://dx.doi.org/10.1016/S0040-6090(03)00227-X
Structural and optical properties of epitaxial CuGaS2 films on Si substrates. - In: Thin solid films, ISSN 1879-2731, Bd. 431/432 (2003), S. 219-222
http://dx.doi.org/10.1016/S0040-6090(03)00227-X
Žochovec, Svjatoslav; Goldhahn, Rüdiger; Gobsch, Gerhard; Piekh, S.; Lantier, R.; Rizzi, A.; Lebedev, Vadim; Richter, W.
Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry. - In: Journal of applied physics, ISSN 1089-7550, Bd. 94 (2003), 1, S. 307-312
https://doi.org/10.1063/1.1582369
Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry. - In: Journal of applied physics, ISSN 1089-7550, Bd. 94 (2003), 1, S. 307-312
https://doi.org/10.1063/1.1582369
Shokhovets, Sviatoslov; Fuhrmann, Daniel; Goldhahn, Rüdiger; Gobsch, Gerhard; Ambacher, Oliver; Hermann, Martin; Karrer, Uwe; Eickhoff, Martin
Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity. - In: Applied physics letters, ISSN 1077-3118, Bd. 82 (2003), 11, S. 1712-1714
http://dx.doi.org/10.1063/1.1561160
Exciton quenching in Pt/GaN Schottky diodes with Ga- and N-face polarity. - In: Applied physics letters, ISSN 1077-3118, Bd. 82 (2003), 11, S. 1712-1714
http://dx.doi.org/10.1063/1.1561160
Winder, Christoph; Lungenschmied, Christoph; Matt, Gebhard; Sariciftci, Niyazi Serdar; Nogueira, Ana F.; Montanari, Ivan; Durrant, James R.; Arndt, Christian; Zhokhavets, Uladzimir; Gobsch, Gerhard
Excited state spectroscopy in polymer fullerene photovoltaic devices under operation conditions. - In: Synthetic metals, Bd. 139 (2003), 3, S. 577-580
http://dx.doi.org/10.1016/S0379-6779(03)00288-1
Excited state spectroscopy in polymer fullerene photovoltaic devices under operation conditions. - In: Synthetic metals, Bd. 139 (2003), 3, S. 577-580
http://dx.doi.org/10.1016/S0379-6779(03)00288-1
Goldhahn, Rüdiger;
Dielectric function of nitride semiconductors: recent experimental results. - In: Acta physica Polonica, ISSN 0587-4246, Bd. 104 (2003), 2, S. 123-147
Dielectric function of nitride semiconductors: recent experimental results. - In: Acta physica Polonica, ISSN 0587-4246, Bd. 104 (2003), 2, S. 123-147
Stein, Norbert;
Die Entwicklung eines Analogrechners am Institut für Physik in den 50-er Jahren. - In: 50 Jahre 1953 - 2003 Hochschule für Elektrotechnik Ilmenau, Technische Hochschule Ilmenau, Technische Universität Ilmenau, (2003), S. 88-90
Die Entwicklung eines Analogrechners am Institut für Physik in den 50-er Jahren. - In: 50 Jahre 1953 - 2003 Hochschule für Elektrotechnik Ilmenau, Technische Hochschule Ilmenau, Technische Universität Ilmenau, (2003), S. 88-90