Fields of activity
1. modern power devices
Trench-MOSFET for 20V-150V: cell optimizations by means of device simulations, static and dynamic characterization, optimization of internal FWD Technological Realization (Foundry)
Trench-IGBT for 600V - 3500V: cell and edge structure optimizations by means of device simulations, technological realization (foundry), static and dynamic characterization,
Free-wheeling diodes for 600V- 3500V: Optimization of the vertical and edge structure by means of device simulations, technological realization (foundry), physical investigations of lifetime centers (parameter determination, inclusion in device simulation)
2nd Smart Power - IC
On the basis of a comprehensive design framework and many years of experience, new integrated components, circuit topologies and demonstrators of integrated circuits are developed. The following technologies, especially for mixed-signal design, are available from excellent foundry partners and are supported by appropriate libraries:
- various CMOS technologies from 0.5-1.5µm with a wide range of optional processes (n-channel and p-channel high voltage (120V),
- multiple poly-Si, multiple metal, RAM, ROM, EEPROM etc.).
- BiCMOS technology 0.8µm
- Bipolar processes up to 90V
- BCD-MOS process up to 90V (optional 700V)
- SOI process up to 800V and operating temperatures up to 200°C.
- Realized devices and circuits can be characterized statically and dynamically on-wafer or in-package with suitable measurement techniques.
3. further fields of work
- Modeling of components and SPICE parameter extraction
- Development of sensors (e.g. temperature, current) and sensor evaluation circuits (ICs)
- Reliability of power devices and systems
