Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Cimalla, Volker; Cheng, T. S.; Foxon, C. Thomas
Analysis of reflectivity measurements for GaN films grown on GaAs: influence of surface roughness and interface layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1347-1350
Analysis of reflectivity measurements for GaN films grown on GaAs: influence of surface roughness and interface layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1347-1350
Werninghaus, Thomas; Friedrich, M.; Cimalla, Volker; Scheiner, Jörg; Goldhahn, Rüdiger; Zahn, Dietrich R. T.; Pezoldt, Jörg
Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)1. - In: Diamond and related materials, ISSN 0925-9635, Bd. 7 (1998), 9, S. 1385-1389
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Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)1. - In: Diamond and related materials, ISSN 0925-9635, Bd. 7 (1998), 9, S. 1385-1389
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Cole, Bryan E.; Takamasu, Tadashi; Takehana, Kanji; Goldhahn, Rüdiger; Schulze, Dirk; Kido, Giyuu; Chamberlain, John Martyn; Gobsch, Gerhard; Henini, Mohamed; Hill, Geoffrey
Interband spectroscopy of p-type GaAs/(Al,Ga)As quantum wells at low hole densities. - In: Physica, ISSN 1873-2135, Bd. 249/251 (1998), S. 607-611
https://doi.org/10.1016/S0921-4526(98)00247-6
Interband spectroscopy of p-type GaAs/(Al,Ga)As quantum wells at low hole densities. - In: Physica, ISSN 1873-2135, Bd. 249/251 (1998), S. 607-611
https://doi.org/10.1016/S0921-4526(98)00247-6
Žochovec, Svjatoslav; Goldhahn, Rüdiger; Cimalla, Volker; Cheng, T. S.; Foxon, Tom
Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index. - In: Journal of applied physics, ISSN 1089-7550, Bd. 84 (1998), 3, S. 1561-1566
https://doi.org/10.1063/1.368223
Reflectivity study of hexagonal GaN films grown on GaAs: surface roughness, interface layer, and refractive index. - In: Journal of applied physics, ISSN 1089-7550, Bd. 84 (1998), 3, S. 1561-1566
https://doi.org/10.1063/1.368223
Žochovec, Svjatoslav;
Goldhahn, Rüdiger; Gobsch, Gerhard; Cheng, T.S.; Foxon, C. Tom
Reflectance and electroreflectance of MBE grown GaN layers. - In: Physics, chemistry and application of nanostructures, (1997), S. 87-90
Reflectance and electroreflectance of MBE grown GaN layers. - In: Physics, chemistry and application of nanostructures, (1997), S. 87-90
Polyakov, Vladimir A.; Elbe, A.; Schäfer, Jürgen A.
Influence of hydrogen on Si-doped GaAs(100) in the space charge regime. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 159 (1997), 1, S. 195-203
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Influence of hydrogen on Si-doped GaAs(100) in the space charge regime. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 159 (1997), 1, S. 195-203
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Balster, Torsten; Tautz, Frank Stefan; Ibach, Harald; Schäfer, Jürgen A.
Investigation of modified 3C SiC(100) surfaces by surface-sensitive techniques. - In: Diamond and related materials, ISSN 0925-9635, Bd. 6 (1997), 10, S. 1353-1357
https://doi.org/10.1016/S0925-9635(97)00091-5
Investigation of modified 3C SiC(100) surfaces by surface-sensitive techniques. - In: Diamond and related materials, ISSN 0925-9635, Bd. 6 (1997), 10, S. 1353-1357
https://doi.org/10.1016/S0925-9635(97)00091-5
Stietz, Frank; Woll, J.; Persch, V.; Allinger, Th.; Erfurth, W.; Goldmann, A.; Schäfer, Jürgen A.
Interaction of hydrogen and methane with InP(100) and GaAs(100) surfaces. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 159 (1997), 1, S. 185-194
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Interaction of hydrogen and methane with InP(100) and GaAs(100) surfaces. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 159 (1997), 1, S. 185-194
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Bornscheuer, K. H.; Hübner, A.; Lucas, S. R.; Choyke, W. J.; Partlow, W. D.; Yates, J. T.; Schäfer, Jürgen A.
Production of atomic hydrogen and its use for the growth of GaN with low carbon level. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 159 (1997), 1, S. 133-135
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Production of atomic hydrogen and its use for the growth of GaN with low carbon level. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 159 (1997), 1, S. 133-135
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Fiechter, Sebastian; Castleberry, R. H.; Angelov, Mirko; Bachmann, K. J.
Melt growth of ZnGeP 2: homogeneity range and thermochemical properties. - In: Infrared applications of semiconductors - materials, processing and devices, (1997), S. 315-320
Melt growth of ZnGeP 2: homogeneity range and thermochemical properties. - In: Infrared applications of semiconductors - materials, processing and devices, (1997), S. 315-320