Tautz, Frank Stefan; Sloboshanin, Sergej; Hohenecker, S.; Zahn, Dietrich R. T.; Schäfer, Jürgen A.
Initial stages of the reaction of the c(2 x 2) reconstructed SiC(1 0 0) surfaces with atomic hydrogen. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Initial stages of the reaction of the c(2 x 2) reconstructed SiC(1 0 0) surfaces with atomic hydrogen. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Sloboshanin, Sergej; Gebhardt, K.; Schäfer, Jürgen A.; Chassé, T.
H 2 S passivation of InP (0 0 1) surfaces. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 7 S.
H 2 S passivation of InP (0 0 1) surfaces. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 7 S.
Polyakov, Vladimir M.; Balster, Torsten; Ibach, Harald; Schäfer, Jürgen A.
Surface-states-derived electronic transitions of SiC(0 0 1). - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 7 S.
Surface-states-derived electronic transitions of SiC(0 0 1). - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 7 S.
Scherge, Matthias; Schäfer, Jürgen A.
Tribological micro-characterization. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Tribological micro-characterization. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Nakov, Valentin; Gobsch, Gerhard; Goldhahn, Rüdiger
Modellierung elektronischer und optischer Eigenschaften von Quantum-Well-Strukturen auf der Basis von Gruppe III-Nitriden. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Modellierung elektronischer und optischer Eigenschaften von Quantum-Well-Strukturen auf der Basis von Gruppe III-Nitriden. - In: 43. Internationales Wissenschaftliches Kolloquium, (1998), insges. 6 S.
Cimalla, Volker; Scheiner, Jörg; Ecke, Gernot; Friedrich, M.; Goldhahn, Rüdiger; Zahn, Dietrich R. T.; Pezoldt, Jörg
The measurement of the thickness of thin SiC layers on silicon. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 641-644
The measurement of the thickness of thin SiC layers on silicon. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 641-644
Goldhahn, Rüdiger; Shokhovets, Sviatoslav; Romanus, Henry; Cheng, T. S.; Foxon, C. Thomas
Free exciton recombination in tensile strained GaN grown on GaAs. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1271-1274
Free exciton recombination in tensile strained GaN grown on GaAs. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1271-1274
Shokhovets, Sviatoslav; Goldhahn, Rüdiger; Cimalla, Volker; Cheng, T. S.; Foxon, C. Thomas
Analysis of reflectivity measurements for GaN films grown on GaAs: influence of surface roughness and interface layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1347-1350
Analysis of reflectivity measurements for GaN films grown on GaAs: influence of surface roughness and interface layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 1347-1350
Werninghaus, Thomas; Friedrich, M.; Cimalla, Volker; Scheiner, Jörg; Goldhahn, Rüdiger; Zahn, Dietrich R. T.; Pezoldt, Jörg
Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)1. - In: Diamond and related materials, ISSN 0925-9635, Bd. 7 (1998), 9, S. 1385-1389
http://dx.doi.org/10.1016/S0925-9635(98)00224-6
Optical characterization of MBE grown cubic and hexagonal SiC films on Si(111)1. - In: Diamond and related materials, ISSN 0925-9635, Bd. 7 (1998), 9, S. 1385-1389
http://dx.doi.org/10.1016/S0925-9635(98)00224-6
Cole, Bryan E.; Takamasu, Tadashi; Takehana, Kanji; Goldhahn, Rüdiger; Schulze, Dirk; Kido, Giyuu; Chamberlain, John Martyn; Gobsch, Gerhard; Henini, Mohamed; Hill, Geoffrey
Interband spectroscopy of p-type GaAs/(Al,Ga)As quantum wells at low hole densities. - In: Physica, ISSN 1873-2135, Bd. 249/251 (1998), S. 607-611
https://doi.org/10.1016/S0921-4526(98)00247-6
Interband spectroscopy of p-type GaAs/(Al,Ga)As quantum wells at low hole densities. - In: Physica, ISSN 1873-2135, Bd. 249/251 (1998), S. 607-611
https://doi.org/10.1016/S0921-4526(98)00247-6