Funded OA publications

Redox-based memristive devices have shown great potential for application in neuromorphic computing systems. However, the demands on the device characteristics depend on the implemented computational scheme and unifying the desired properties in one stable device is still challenging. Understanding how and to what extend the device characteristics can be tuned and stabilized is crucial for developing application specific designs. Here, we present memristive devices with a functional trilayer of HfOx/Al2O3/TiO2 tailored by the stoichiometry of HfOx (x = 1.8, 2) and the operating conditions. The device properties are experimentally analyzed, and a physics-based device model is developed to provide a microscopic interpretation and explain the role of the Al2O3 layer for a stable performance. Our results demonstrate that the resistive switching mechanism can be tuned from area type to filament type in the same device, which is well explained by the model: the Al2O3 layer stabilizes the area-type switching mechanism by controlling the formation of oxygen vacancies at the Al2O3/HfOx interface with an estimated formation energy of ≈ 1.65 ± 0.05 eV. Such stabilized area-type devices combine multi-level analog switching, linear resistance change, and long retention times (≈ 107-108 s) without external current compliance and initial electroforming cycles. This combination is a significant improvement compared to previous bilayer devices and makes the devices potentially interesting for future integration into memristive circuits for neuromorphic applications.

Well-defined hetero-interfaces with controlled properties are crucial for any high-performance, semiconductor-based, (opto-)electronic device. They are particularly important for device structures on the nanoscale with increased interfacial areas. Utilizing a ultrahigh-vacuum based multi-tip scanning tunneling microscope, this work reveals inadvertent conductivity channels between the nanowire (NW) base and the substrate, when measuring individual vertical core-shell III-V-semiconductor NWs. For that, four-terminal probing is applied on freestanding, epitaxially grown coaxial p-GaAs/i-GaInP/n-GaInP NWs without the need of nanoscale lithography or deposition of electrical contacts. This advanced analysis, carried out after composition-selective wet chemical etching, reveals a substantially degraded electrical performance of the freestanding NWs compared to detached ones. In an electron beam induced current mode of the nanosensor, charge separation at the substrate-to-NW base junction is demonstrated. An energy dispersive X-ray spectroscopic linescan shows an unintended compositional change of the epitaxially grown NW toward the planar layers caused by different incorporation mechanisms of Ga and In at the NW base. This approach provides direct insight into the NW-substrate transition area and leads to a model of the conductivity channels at the NW base, which should, in principle, be considered in the fabrication of all NW heterostructures grown bottom-up on heterogeneous substrate materials.

Range-resolved interferometry (RRI) allows the simultaneous demodulation of multiple interferometric signal sources and provides a tomographic view of all constituent interferometers that may be present in a setup. Through comparison with a reference distance of known length, absolute distance measurements can be performed. RRI is tailored to the use of laser frequency modulation through injection-current modulation of regular, monolithic laser diodes that are both cost-effective and highly coherent and therefore this approach promises broad applicability. In this paper, two methods for absolute distance measurement, one based on the direct evaluation of the signal peak positions and one based on the phase demodulation of an additional lock-in modulation signal, are experimentally demonstrated. Using an external verification displacement interferometer, both techniques are shown to achieve in-situ absolute distance measurements with systematic errors below over a 50 mm travel range. The aim of this paper is to establish the general suitability of RRI for absolute distance measurements and in-situ tomographic interferometer characterisation for precision engineering. In future, this approach could be used to diagnose interferometric setups for parasitic signal contributions, multiple reflections or to determine the dead path length for accurate environmental compensation, either for use during initial setup of, or for continuous operation alongside, a regular displacement measuring interferometer.

The ASi-Sii defect model as one possible explanation for light-induced degradation (LID) in typically boron-doped silicon solar cells, detectors, and related systems is discussed and reviewed. Starting from the basic experiments which led to the ASi-Sii defect model, the ASi-Sii defect model (A: boron, or indium) is explained and contrasted to the assumption of a fast-diffusing so-called “boron interstitial.” An LID cycle of illumination and annealing is discussed within the conceptual frame of the ASi-Sii defect model. The dependence of the LID defect density on the interstitial oxygen concentration is explained within the ASi-Sii defect picture. By comparison of electron paramagnetic resonance data and minority carrier lifetime data related to the assumed fast diffusion of the “boron interstitial” and the annihilation of the fast LID component, respectively, the characteristic EPR signal Si-G28 in boron-doped silicon is related to a specific ASi-Sii defect state. Several other LID-related experiments are found to be consistent with an interpretation by an ASi-Sii defect.

Solar energy is a green, sustainable, and de facto inexhaustible energy source for mankind. The conversion of solar energy into other forms of energy has attracted extensive research interest due to climate change and the energy crisis. Among all the solar energy conversion technologies, photothermal conversion of solar energy exhibits unique advantages when applied for water purification, desalination, high-temperature heterogeneous catalysis, anti-bacterial treatments, and deicing. In this review, the various photothermal conversion mechanisms based on different forms of heat release are summarized and some of the latest examples are presented. In addition, the necessary prerequisites for solar-driven photothermal materials toward their practical applications are also discussed. Further, the latest advances in photothermal conversion of solar energy are discussed, focusing on different types of photothermal applications. Finally, a summary is given and the challenges and opportunities in the photothermal conversion of solar energy are presented. This review aims to give a comprehensive understanding of emerging solar energy conversion technologies based on the photothermal effect, especially by using nanomaterials and nanostructures.