Göckeritz, Robert; Pezoldt, Jörg; Schwierz, Frank
Epitaxial graphene three-terminal junctions. - In: Applied physics letters, ISSN 1077-3118, Bd. 99 (2011), 17, S. 173111, insges. 3 S.
http://dx.doi.org/10.1063/1.3653469
Epitaxial graphene three-terminal junctions. - In: Applied physics letters, ISSN 1077-3118, Bd. 99 (2011), 17, S. 173111, insges. 3 S.
http://dx.doi.org/10.1063/1.3653469
Granzner, Ralf; Tschumak, Elena; Kittler, Mario; Tonisch, Katja; Jatal, Wael; Pezoldt, Jörg; As, Donat J.; Schwierz, Frank
Vertical design of cubic GaN-based high electron mobility transistors. - In: Journal of applied physics, ISSN 1089-7550, Bd. 110 (2011), 11, 114501, insges. 8 S.
https://doi.org/10.1063/1.3663364
Vertical design of cubic GaN-based high electron mobility transistors. - In: Journal of applied physics, ISSN 1089-7550, Bd. 110 (2011), 11, 114501, insges. 8 S.
https://doi.org/10.1063/1.3663364
Göckeritz, Robert; Schmidt, Denny; Beleites, Moritz; Seifert, Gerhard; Krischok, Stefan P.; Himmerlich, Marcel; Pezoldt, Jörg
High temperature graphene formation on capped and uncapped SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 679/680 (2011), S. 785-788
http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.785
High temperature graphene formation on capped and uncapped SiC. - In: Materials science forum, ISSN 1662-9752, Bd. 679/680 (2011), S. 785-788
http://dx.doi.org/10.4028/www.scientific.net/MSF.679-680.785
Nader, Richard; Pezoldt, Jörg
Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates. - In: Diamond and related materials, ISSN 0925-9635, Bd. 20 (2011), 5/6, S. 717-721
http://dx.doi.org/10.1016/j.diamond.2011.03.006
Strain modification in epitaxial 2H-AlN layers on 3C-SiC/Si(111) pseudo-substrates. - In: Diamond and related materials, ISSN 0925-9635, Bd. 20 (2011), 5/6, S. 717-721
http://dx.doi.org/10.1016/j.diamond.2011.03.006
Pezoldt, Jörg; Kups, Thomas; Stubenrauch, Mike; Fischer, Michael
Black luminescent silicon. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 8 (2011), 3, S. 1021-1026
http://dx.doi.org/10.1002/pssc.201000388
Black luminescent silicon. - In: Physica status solidi. Current topics in solid state physics. - Berlin : Wiley-VCH, 2002-2017 , ISSN: 1610-1642 , ZDB-ID: 2102966-0, ISSN 1610-1642, Bd. 8 (2011), 3, S. 1021-1026
http://dx.doi.org/10.1002/pssc.201000388
Schaaf, Peter; Spieß, Lothar; Kups, Thomas; Romanus, Henry; Grieseler, Rolf; Hopfeld, Marcus; Wilke, Marcus; Stauden, Thomas; Lorenz, David; Fischer, Andreas
Schichten über Schichten : innovative Beschichtungen für komplexe Anwendungen. - In: Vakuum in Forschung und Praxis, ISSN 1522-2454, Bd. 23 (2011), 3, S. 24-32
http://dx.doi.org/10.1002/vipr.201100457
Schichten über Schichten : innovative Beschichtungen für komplexe Anwendungen. - In: Vakuum in Forschung und Praxis, ISSN 1522-2454, Bd. 23 (2011), 3, S. 24-32
http://dx.doi.org/10.1002/vipr.201100457
Brückner, Klemens; Niebelschütz, Florentina; Tonisch, Katja; Förster, Christian; Cimalla, Volker; Stephan, Ralf; Pezoldt, Jörg; Stauden, Thomas; Ambacher, Oliver; Hein, Matthias A.
Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 208 (2011), 2, S. 357-376
http://dx.doi.org/10.1002/pssa.201026343
Micro- and nano-electromechanical resonators based on SiC and group III-nitrides for sensor applications. - In: Physica status solidi. Applications and materials science. - Weinheim : Wiley-VCH, 2005- , ISSN: 1862-6319 , ZDB-ID: 1481091-8, ISSN 1862-6319, Bd. 208 (2011), 2, S. 357-376
http://dx.doi.org/10.1002/pssa.201026343
Räthel, Jochen; Schley, Pascal; Sakalauskas, Egidijus; Gobsch, Gerhard; Müller, René; Klar, Thomas A.; Pezoldt, Jörg; Goldhahn, Rüdiger; Koblmüller, Gregor; Speck, James S.
Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates. - In: DPG Spring Meeting of the Condensed Matter Section with the divisions: Biological Physics, Chemical and Polymer Physics, Crystallography, Dielectric Solids, Dynamics and Statistical Physics, Low Temperature Physics, Magnetism, Metal and Material Physics, Physics of Socio-Economic Systems, Radiation and Medical Physics, Semiconductor Physics, Surface Science, Thin Films, Vacuum Science and Technology as well as the working group: Industry and Business, 2010, HL 56.1
Optical anisotropy of a- and m-plane InN grown on free-standing GaN substrates. - In: DPG Spring Meeting of the Condensed Matter Section with the divisions: Biological Physics, Chemical and Polymer Physics, Crystallography, Dielectric Solids, Dynamics and Statistical Physics, Low Temperature Physics, Magnetism, Metal and Material Physics, Physics of Socio-Economic Systems, Radiation and Medical Physics, Semiconductor Physics, Surface Science, Thin Films, Vacuum Science and Technology as well as the working group: Industry and Business, 2010, HL 56.1
Liday, Jozef; Vogrinčič, Peter; Hotový, Ivan; Bonanni, Alberta; Sitter, Helmut; Lalinský, Tibor; Vanko, Gabriel; Reháček, Vlastimil; Breza, Juraj; Ecke, Gernot
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 61 (2010), 6, S. 378-381
https://doi.org/10.2478/v10187-010-0058-8
Ohmic contacts to p-GaN using Au/Ni-Mg-O metallization. - In: Journal of electrical engineering, ISSN 1339-309X, Bd. 61 (2010), 6, S. 378-381
https://doi.org/10.2478/v10187-010-0058-8
Skriniarov`a, J.; Novotn`y, I.; Tonisch, Katja; Schaaf, Peter
UV-source assisted GaN wet etching. - In: Programme and book of abstracts, ISBN 978-80-7399969-8, (2010), S. 61
UV-source assisted GaN wet etching. - In: Programme and book of abstracts, ISBN 978-80-7399969-8, (2010), S. 61