Cimalla, Volker;
Pezoldt, Jörg; Ecke, Gernot; Eichhorn, Gerd
The buffer layer in RTCVD of SiC. - In: Silicon carbide and related materials 1995, (1996), S. 153-156
The buffer layer in RTCVD of SiC. - In: Silicon carbide and related materials 1995, (1996), S. 153-156
Stauden, Thomas; Eichhorn, Gerd; Cimalla, Volker; Pezoldt, Jörg; Ecke, Gernot
The deposition of aluminum nitride on silicon by plasma-enhanced metal-organic chemical vapour deposition. - In: Diamond and related materials, ISSN 0925-9635, Bd. 5 (1996), 10, S. 1210-1213
https://doi.org/10.1016/0925-9635(96)00512-2
The deposition of aluminum nitride on silicon by plasma-enhanced metal-organic chemical vapour deposition. - In: Diamond and related materials, ISSN 0925-9635, Bd. 5 (1996), 10, S. 1210-1213
https://doi.org/10.1016/0925-9635(96)00512-2
Zahn, Dietrich R. T.; Werninghaus, Thomas; Thümer, M.; Pezoldt, Jörg; Heera, Viton
Raman spectroscopy investigation of (SiC) 1-x (Ain) x layers formed by ion implantation in 6H-SiC. - In: III-Nitride, SiC and diamond materials for electronic devices, (1996), S. 729-734
Raman spectroscopy investigation of (SiC) 1-x (Ain) x layers formed by ion implantation in 6H-SiC. - In: III-Nitride, SiC and diamond materials for electronic devices, (1996), S. 729-734
Rainova, Yu. P.; Pezoldt, Jörg; Antonenko, K. I.; Eichhorn, Gerd
Application of holographic interferometry to flow pattern visualization in an RTCVD reactor. - In: Rapid thermal and integrated processing V, (1996), S. 65-70
Application of holographic interferometry to flow pattern visualization in an RTCVD reactor. - In: Rapid thermal and integrated processing V, (1996), S. 65-70
Fabricius, Alexander; Nennewitz, Olaf; Spieß, Lothar; Cimalla, Volker; Pezoldt, Jörg
Rapid thermal annealing of tungsten silicide films. - In: Silicide thin films, (1996), S. 625-630
Rapid thermal annealing of tungsten silicide films. - In: Silicide thin films, (1996), S. 625-630
Teichert, Gerd; Pezoldt, Jörg; Cimalla, Volker; Nennewitz, Olaf; Spieß, Lothar
Analysis of reflection high energy electron diffraction pattern of silicon carbide grown on silicon. - In: Evolution of epitaxial structure and morphology, (1996), S. 17-22
Analysis of reflection high energy electron diffraction pattern of silicon carbide grown on silicon. - In: Evolution of epitaxial structure and morphology, (1996), S. 17-22
Zöllner, Jens-Peter; Eichhorn, Gerd; Cimalla, Volker; Bozmarov, J.; Zaumseil, Peter; Kürschner, Hartmut
Slip generation during rapid thermal processing. - In: Physica status solidi, ISSN 1862-6319, Bd. 156 (1996), 1, S. 63-70
http://dx.doi.org/10.1002/pssa.2211560109
Slip generation during rapid thermal processing. - In: Physica status solidi, ISSN 1862-6319, Bd. 156 (1996), 1, S. 63-70
http://dx.doi.org/10.1002/pssa.2211560109
Wöhner, Thomas; Ecke, Gernot; Rößler, Hans; Hofmann, Siegfried
A model of sputtering induced roughness of polycrystalline metallic films. - In: ECASIA 95, (1996), S. 587-590
A model of sputtering induced roughness of polycrystalline metallic films. - In: ECASIA 95, (1996), S. 587-590
Cimalla, Volker; Pezoldt, Jörg; Ecke, Gernot; Rößler, Hans; Eichhorn, Gerd
Characterization of buffer layers for SiC CVD. - In: Proceedings of the Tenth European Conference on Chemical Vapour Deposition, (1995), S. 863-870
Characterization of buffer layers for SiC CVD. - In: Proceedings of the Tenth European Conference on Chemical Vapour Deposition, (1995), S. 863-870
Cimalla, Volker;
Structural evolution of rapid thermal carbonized Si surfaces. - In: Evolution of thin film and surface structure and morphology, (1995), S. 33-38
Structural evolution of rapid thermal carbonized Si surfaces. - In: Evolution of thin film and surface structure and morphology, (1995), S. 33-38