Attenberger, Wilfried; Lindner, Jörg; Cimalla, Volker; Pezoldt, Jörg
Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 544-548
http://dx.doi.org/10.1016/S0921-5107(98)00470-X
Structural and morphological investigations of the initial stages in solid source molecular beam epitaxy of SiC on (111)Si. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 544-548
http://dx.doi.org/10.1016/S0921-5107(98)00470-X
Cimalla, Volker; Stauden, Thomas; Eichhorn, Gerd; Pezoldt, Jörg
Influence of the heating ramp on the heteroepitaxial growth of SiC on Si. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 553-558
http://dx.doi.org/10.1016/S0921-5107(98)00472-3
Influence of the heating ramp on the heteroepitaxial growth of SiC on Si. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 553-558
http://dx.doi.org/10.1016/S0921-5107(98)00472-3
Rybin, Peter V.; Kulikov, Dmitri V.; Trushin, Yuri V.; Yankov, Rossen A.; Ecke, Gernot; Fukarek, Wolfgang; Skorupa, Wolfgang; Pezoldt, Jörg
Modelling high-temperature co-implantation of N + and Al + ions in silicon carbide: the effect of stress on the implant and damage distributions. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 147 (1999), 1/4, S. 279-285
http://dx.doi.org/10.1016/S0168-583X(98)00608-9
Modelling high-temperature co-implantation of N + and Al + ions in silicon carbide: the effect of stress on the implant and damage distributions. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 147 (1999), 1/4, S. 279-285
http://dx.doi.org/10.1016/S0168-583X(98)00608-9
Pezoldt, Jörg; Yankov, Rossen A.; Mücklich, Arndt; Fukarek, Wolfgang; Voelskow, Matthias; Reuther, Helfried; Skorupa, Wolfgang
A novel (SiC) 1-x (AlN) x compound synthesized using ion beams. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 147 (1999), 1/4, S. 273-278
http://dx.doi.org/10.1016/S0168-583X(98)00573-4
A novel (SiC) 1-x (AlN) x compound synthesized using ion beams. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 147 (1999), 1/4, S. 273-278
http://dx.doi.org/10.1016/S0168-583X(98)00573-4
Wöhner, Thomas; Stauden, Thomas; Cimalla, Volker; Eichhorn, Gerd; Schäfer, Jürgen A.; Pezoldt, Jörg
In situ spectroscopic ellipsometry studies of the interaction process of ethene with Si surfaces during SiC formation. - In: In situ process diagnostics and modelling, (1999), S. 95-100
In situ spectroscopic ellipsometry studies of the interaction process of ethene with Si surfaces during SiC formation. - In: In situ process diagnostics and modelling, (1999), S. 95-100
Masari, Pierre; Moreaud, N.; Averous, Michel; Stauden, Thomas; Wöhner, Thomas; Pezoldt, Jörg
On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 213-218
On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 213-218
Romanus, Henry; Cimalla, Volker; Ahmed, Syed Imad-Uddin; Schäfer, Jürgen A.; Ecke, Gernot; Avci, R.; Spieß, Lothar
Preparation of conductive tungsten carbide layers for SiC high temperature applications. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 99-104
Preparation of conductive tungsten carbide layers for SiC high temperature applications. - In: Wide-bandgap semiconductors for high-power, high-frequency and high-temperature applications - 1999, (1999), S. 99-104
Scheiner, Jörg; Goldhahn, Rüdiger; Cimalla, Volker; Ecke, Gernot; Attenberger, Wilfried; Lindner, Jörg K. M.; Gobsch, Gerhard; Pezoldt, Jörg
Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 526-530
http://dx.doi.org/10.1016/S0921-5107(98)00466-8
Spectroscopic ellipsometry studies of heteroepitaxially grown cubic silicon carbide layers on silicon. - In: Materials science and engineering. Solid state materials for advanced technology / American Society for Metals. - New York, NY [u.a.] : Elsevier, 1988- , ISSN: 1873-4944 , ZDB-ID: 1492109-1, ISSN 1873-4944, Bd. 61/62 (1999), S. 526-530
http://dx.doi.org/10.1016/S0921-5107(98)00466-8
Truschin, Yuri V.; Yankov, Rossen, A.; Kharlamov, Vladimir S.; Kulikov, Dmitri V.; Tsigankov, D. N.; Kreissig, Ulrich; Voelskow, Matthias; Pezoldt, Jörg; Skorupa, Wolfgang
A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ co-implants in 6H-SiC. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 757-760
Im Titel sind "1-x" und "x" tiefgestellt, "+" hochgestellt
A computational model for the formation of (SiC)1-x(AlN)x structures by hot, high-dose N+ and Al+ co-implants in 6H-SiC. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 757-760
Im Titel sind "1-x" und "x" tiefgestellt, "+" hochgestellt
Yankov, Rossen, A.; Fukarek, Wolfgang; Voelskow, Matthias; Pezoldt, Jörg; Skorupa, Wolfgang
Ion beam synthesis: a novel method of producing (SiC)1-x(AlN)x layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 753-756
Im Titel sind "1-x" und "x" tiefgestellt
Ion beam synthesis: a novel method of producing (SiC)1-x(AlN)x layers. - In: Silicon carbide, III-nitrides and related materials, (1998), S. 753-756
Im Titel sind "1-x" und "x" tiefgestellt