Masri, Pierre; Cimalla, Volker; Pezoldt, Jörg; Camassel, Jean; Gil, Bernard; Averous, Michel
Theoretical evaluation of the interface modification for aluminium nitride growth on Si. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2002), 1, S. 355-359
http://dx.doi.org/10.1002/pssc.200390062
Theoretical evaluation of the interface modification for aluminium nitride growth on Si. - In: Physica status solidi, ISSN 1610-1642, Bd. 0 (2002), 1, S. 355-359
http://dx.doi.org/10.1002/pssc.200390062
Shokhovets, Sviatoslav; Fuhrmann, Daniel; Goldhahn, Rüdiger; Gobsch, Gerhard; Ambacher, Oliver; Hermann, Martin; Karrer, Uwe
Study of exciton dead layers in GaN Schottky diodes with N and Ga-face polarity. - In: Physica status solidi, ISSN 1862-6319, Bd. 194 (2002), 2, S. 480-484
http://dx.doi.org/10.1002/1521-396X(200212)194:2<480::AID-PSSA480>3.0.CO;2-J
Study of exciton dead layers in GaN Schottky diodes with N and Ga-face polarity. - In: Physica status solidi, ISSN 1862-6319, Bd. 194 (2002), 2, S. 480-484
http://dx.doi.org/10.1002/1521-396X(200212)194:2<480::AID-PSSA480>3.0.CO;2-J
Graf, T.; Gjukic, M.; Brandt, M. S.; Stutzmann, Martin; Ambacher, Oliver
The Mn3+/2+ acceptor level in group III nitrides. - In: Applied physics letters, ISSN 1077-3118, Bd. 81 (2002), 27, S. 5159-5161
http://dx.doi.org/10.1063/1.1530374
The Mn3+/2+ acceptor level in group III nitrides. - In: Applied physics letters, ISSN 1077-3118, Bd. 81 (2002), 27, S. 5159-5161
http://dx.doi.org/10.1063/1.1530374
Schalwig, J.; Müller, G.; Karrer, Uwe; Eickhoff, Martin; Ambacher, Oliver; Stutzmann, Martin; Görgens, L.; Dollinger, G.
Hydrogen response mechanism of Pt-GaN Schottky diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 80 (2002), 7, S. 1222-1224
Hydrogen response mechanism of Pt-GaN Schottky diodes. - In: Applied physics letters, ISSN 0003-6951, Bd. 80 (2002), 7, S. 1222-1224
Fiorentini, Vincenzo; Bernardini, Fabio; Ambacher, Oliver
Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures. - In: Applied physics letters, ISSN 0003-6951, Bd. 80 (2002), 7, S. 1204-1206
Evidence for nonlinear macroscopic polarization in III-V nitride alloy heterostructures. - In: Applied physics letters, ISSN 0003-6951, Bd. 80 (2002), 7, S. 1204-1206
Goldhahn, Rüdiger; Buchheim, Carsten; Žochovec, Svjatoslav; Gobsch, Gerhard; Ambacher, Oliver; Link, Angela; Hermann, Martin; Stutzmann, Martin; Smorchkova, Y.; Mishra, Umesh K.; Speck, James S.
Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG. - In: Physica status solidi, ISSN 0370-1972, Bd. 234 (2002), 3, S. 713-716
Photoreflectance studies of AlGaN/GaN heterostructures containing a polarisation induced 2DEG. - In: Physica status solidi, ISSN 0370-1972, Bd. 234 (2002), 3, S. 713-716
Pezoldt, Jörg; Wöhner, Thomas; Stauden, Thomas; Schäfer, Jürgen A.; Masri, Pierre
The influence of Ge on the SiC nucleation on (111)Si surfaces. - In: Silicon carbide and related materials, (2001), S. 183-186
The influence of Ge on the SiC nucleation on (111)Si surfaces. - In: Silicon carbide and related materials, (2001), S. 183-186
Scharmann, Friedhelm; Maslarski, P.; Lehmkuhl, Dirk; Stauden, Thomas; Pezoldt, Jörg
Evaluation of carbon surface diffusion on silicon by using surface phase transitions. - In: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 12 - 17 June 2000, St. Petersburg, Russia, (2001), S. 173-177
Evaluation of carbon surface diffusion on silicon by using surface phase transitions. - In: Fourth International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 12 - 17 June 2000, St. Petersburg, Russia, (2001), S. 173-177
Pezoldt, Jörg; Stauden, Thomas; Förster, Christian; Masri, Pierre
Characterization of SiC grown on Ge modified silicon substrates. - In: Silicon carbide - materials, processing and devices, 2001, H5.7, insges. 6 S.
Characterization of SiC grown on Ge modified silicon substrates. - In: Silicon carbide - materials, processing and devices, 2001, H5.7, insges. 6 S.
Masri, Pierre; Rouhani Laridjani, M.; Stauden, Thomas; Pezoldt, Jörg; Averous, Michel
Structural and elasticity-based properties of SiC-based interfaces: their relevance to the heteroepitaxy of III-V nitrides. - In: GaN and related alloys - 2000, 2001, G3.49, insges. 6 S.
Structural and elasticity-based properties of SiC-based interfaces: their relevance to the heteroepitaxy of III-V nitrides. - In: GaN and related alloys - 2000, 2001, G3.49, insges. 6 S.