Pezoldt, Jörg; Schröter, B.; Cimalla, Volker; Masri, Pierre
The influence of surface preparation on the properties of SiC on Si(111). - In: Physica status solidi, ISSN 1862-6319, Bd. 185 (2001), 1, S. 159-166
http://dx.doi.org/10.1002/1521-396X(200105)185:1<159::AID-PSSA159>3.0.CO;2-B
The influence of surface preparation on the properties of SiC on Si(111). - In: Physica status solidi, ISSN 1862-6319, Bd. 185 (2001), 1, S. 159-166
http://dx.doi.org/10.1002/1521-396X(200105)185:1<159::AID-PSSA159>3.0.CO;2-B
Masri, Pierre; Stauden, Thomas; Pezoldt, Jörg; Averous, Michel
Elasticity-based approach of interfaces: application to heteroepitaxy and hetero-systems. - In: Physica status solidi, ISSN 1862-6319, Bd. 187 (2001), 2, S. 439-469
http://dx.doi.org/10.1002/1521-396X(200110)187:2<439::AID-PSSA439>3.0.CO;2-6
Elasticity-based approach of interfaces: application to heteroepitaxy and hetero-systems. - In: Physica status solidi, ISSN 1862-6319, Bd. 187 (2001), 2, S. 439-469
http://dx.doi.org/10.1002/1521-396X(200110)187:2<439::AID-PSSA439>3.0.CO;2-6
Masri, Pierre; Rouhani Laridjani, M.; Pezoldt, Jörg; Yankov, Rossen A.; Skorupa, Wolfgang; Averous, Michel
(AlN)x(SiC)1-x buried layers implanted in 6HSiC: a theoretical study of their optimized composition. - In: Applied surface science, Bd. 184 (2001), 1/4, S. 383-386
http://dx.doi.org/10.1016/S0169-4332(01)00522-0
(AlN)x(SiC)1-x buried layers implanted in 6HSiC: a theoretical study of their optimized composition. - In: Applied surface science, Bd. 184 (2001), 1/4, S. 383-386
http://dx.doi.org/10.1016/S0169-4332(01)00522-0
Koitzsch, Christian; Conrad, D.; Scheerschmidt, K.; Scharmann, Friedhelm; Maslarski, P.; Pezoldt, Jörg
Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics. - In: Applied surface science, Bd. 179 (2001), 1/4, S. 49-54
http://dx.doi.org/10.1016/S0169-4332(01)00262-8
Carbon-induced reconstructions on Si(111) investigated by RHEED and molecular dynamics. - In: Applied surface science, Bd. 179 (2001), 1/4, S. 49-54
http://dx.doi.org/10.1016/S0169-4332(01)00262-8
Pezoldt, Jörg; Förster, Christian; Weih, Petia; Masri, Pierre
Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces. - In: Applied surface science, Bd. 184 (2001), 1/4, S. 79-83
http://dx.doi.org/10.1016/S0169-4332(01)00480-9
Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces. - In: Applied surface science, Bd. 184 (2001), 1/4, S. 79-83
http://dx.doi.org/10.1016/S0169-4332(01)00480-9
Rybin, Peter V.; Kulikov, Dmitri V.; Trushin, Yuri V.; Yankov, Rossen A.; Voelskow, Matthias; Scharmann, Friedhelm; Pezoldt, Jörg
Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 178 (2001), 1/4, S. 269-274
http://dx.doi.org/10.1016/S0168-583X(00)00476-6
Theoretical and experimental investigations of defect evolution in silicon carbide during N+ and Al+ ion implantation taking into account internal stress fields. - In: Nuclear instruments & methods in physics research. Beam interactions with materials and atoms. - Amsterdam [u.a.] : Elsevier, 1984- , ZDB-ID: 1466524-4, Bd. 178 (2001), 1/4, S. 269-274
http://dx.doi.org/10.1016/S0168-583X(00)00476-6
Mikroulis, S.; Cimalla, Volker; Kostopoulos, A.; Constandinidis, G.; Drakakis, G.; Zervos, M.; Cengher, M.; Georgakilas, A.
Investigation of the nitridation of Al2O3 (0001) substrates by a nitrogen radio frequency plasma source. - In: Microelectronics, microsystems and nanotechnology, (2001), S. 135-138
Investigation of the nitridation of Al2O3 (0001) substrates by a nitrogen radio frequency plasma source. - In: Microelectronics, microsystems and nanotechnology, (2001), S. 135-138
Pezoldt, Jörg; Schröter, B.; Cimalla, Volker; Stauden, Thomas; Goldhahn, Rüdiger; Romanus, Henry; Spieß, Lothar
Carbonization induced change of the polarity for MBE grown 3C-SiC/Si(111). - In: Silicon carbide and related materials, (2001), S. 179-182
Carbonization induced change of the polarity for MBE grown 3C-SiC/Si(111). - In: Silicon carbide and related materials, (2001), S. 179-182
Pieterwas, Ralf; Kosiba, Rastislav; Ecke, Gernot; Pezoldt, Jörg; Rößler, Hans
Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 281-287
Auger depth profiling of thin SiC layers: practical aspects for a better understanding of quantitative analysis. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 281-287
Pezoldt, Jörg;
Teichert, Gerd; Panknin, Dieter; Voelskow, Matthias
Photothermal measurements of Al+- and Al+/N+- implanted 6H-SiC. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 276-280
Im Titel ist "+" hochgestellt
Photothermal measurements of Al+- and Al+/N+- implanted 6H-SiC. - In: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (2000), S. 276-280
Im Titel ist "+" hochgestellt