Sensor technologies for enhanced safety and security of buildings and its occupants (SafeSens) : Teilprojekt: Strukturanalytik und Demonstrator an Metalloxiden für die Gasanalyse (SADMOX) : Abschlußbericht : Projektbeginn: 01.04.2014, Förderzeitraum: 01.07.2014-31.03.2017, Projektende: 30.11.2017. - [Ilmenau] : [Technische Universität Ilmenau (TUIL), Fakultät für Elektrotechnik und Informationstechnik, Institut für Werkstofftechnik, Fachgebiet Werkstoffe der Elektrotechnik]. - 1 Online-Ressource (211 Seiten, 49,52 MB)Förderkennzeichen BMBF 16ES0226. - Verbund-Nummer 01152795
https://doi.org/10.2314/GBV:1026691850
Investigation on contact resistance behavior of switching contacts using a newly developed model switch. - In: IEEE transactions on components, packaging and manufacturing technology, ISSN 2156-3985, Bd. 8 (2018), 6, S. 939-949
https://doi.org/10.1109/TCPMT.2018.2791839
Mechanical properties of the solid electrolyte Al-substituted Li7La3Zr2O12 (LLZO) by utilizing micro-pillar indentation splitting test. - In: Journal of the European Ceramic Society, ISSN 1873-619X, Bd. 38 (2018), 9, S. 3201-3209
Im Titel sind "7", "3", "2" und "12" tiefgestellt
https://doi.org/10.1016/j.jeurceramsoc.2018.02.032
Mössbauer spectroscopy of ZnxMg1-x Fe2O4 (0 ≤ x ≤ 0.74) nanostructures crystallized from borate glasses. - In: Journal of nanoparticle research, ISSN 1572-896X, Bd. 20 (2018), 3, 81, insges. 12 S.
Im Titel sind "x", "1-x", "2" und "4" tiefgestellt
https://doi.org/10.1007/s11051-018-4180-z
Layer thickness effect on fracture behavior of Al/Si3N4 multilayer on Si substrate under three-point bending. - In: Applied surface science, Bd. 445 (2018), S. 563-567
Im Titel sind "2" und "3" tiefgestellt
The fracture behavior of multilayers in the nanometer thickness range has attracted an increased attention due to microelectronics and high-speed technologies. In this work, Al/Si3N4 multilayers fabricated by magnetron sputtering on the silicon substrate were subjected to three-point bend testing. It was investigated that the fracture behavior of Al/Si3N4 multilayers with different individual layer thickness (50, 100, 250 nm) but with the same total thickness (1.0 [my]m). There is a significant layer thickness effect on the fracture behavior of the whole multilayer-substrate system: when the individual layer thickness is large (250 nm), the failure of the whole system was dominated by the fracture of the substrate, while the failure of the whole system was dominated by the fracture of the multilayer with smaller individual layer thickness (50 nm). This effect is clearly obvious, although the total thickness of the multilayer is very small compared with that of the substrate. As the individual layer thickness decreased from 250 nm to 50 nm, the fracture strain on the Al/Si3N4 multilayer decreased from 0.073% to 0.026%.
https://doi.org/10.1016/j.apsusc.2018.02.223
Enhancing the retention force of press-fit connections by ultrasonic excitation. - In: Physica status solidi, ISSN 1862-6319, Bd. 215 (2018), 6, S. 1700598, insges. 8 S.
https://doi.org/10.1002/pssa.201700598
Solid-state dewetting of Au-Ni bi-layer films mediated through individual layer thickness and stacking sequence. - In: Applied surface science, Bd. 444 (2018), S. 505-510
In the present work, the solid-state dewetting of Au-Ni bi-layer thin films deposited on SiO2/Si is systematically studied with respect to individual layer thickness and stacking sequence. For this purpose, a rapid heat treatment at medium temperatures is applied in order to examine void formation at the early stages of the dewetting. Compositional variations are realized by changing the thickness ratio of the bi-layer films, while the total thickness is maintained at 20 nm throughout the study. In the event of Au/Ni films annealed at 500 ˚C, crystal voids exposing the substrate are missing regardless of chemical composition. In reverse order, the number of voids per unit area in two-phase Au-Ni thin films is found to be governed by the amount of Au-rich material. At higher temperatures up to 650 ˚C, a decreased probability of nucleation comes at the expense of a major portion of cavities, resulting in the formation of bubbles in 15 nm Ni/5 nm Au bi-layers. Film buckling predominantly occurred at phase boundaries crossing the bubbles.
https://doi.org/10.1016/j.apsusc.2018.03.096
A novel evaluation strategy for fatigue reliability of flexible nanoscale films. - In: Materials Research Express, ISSN 2053-1591, Volume 5 (2018), number 3, 035012, Seite 1-8
https://doi.org/10.1088/2053-1591/aab1c5
Plasmonic nanosponges. - In: Advances in Physics: X, ISSN 2374-6149, Bd. 3 (2018), 1, Article: 1456361, insges. 19 S.
Gold nanosponges, or nanoporous gold nanoparticles, possess a percolated nanoporous structure over the entire nanoparticles. The optical and plasmonic properties of gold nanosponges and its related hybrid nanosponges are very fascinating due to the unique structural feature, and are controllable and tuneable in a large scope by changing the structural parameters like pore/ligament size, porosity, particle size, particles form, and hybrid structure. The nanosponges show the strong polarization dependence and multiple resonances behavior. Besides, the nanosponges exhibit a significantly higher local field enhancement than the solid nanoparticles. Strong nonlinear optical properties are confirmed by their high-order photoemission behavior, whereby long-lived plasmon modes are also clearly observed. All this is very important and relevant for the applications in enhanced Raman scattering, fluorescence manipulation, sensing, and nonlinear photonics.
https://doi.org/10.1080/23746149.2018.1456361
Surface-nanostructured Al-AlN composite thin films with excellent broad-band antireflection properties fabricated by limited reactive sputtering. - In: ACS applied nano materials, ISSN 2574-0970, Bd. 1 (2018), 3, S. 1124-1130
Al-AlN composite thin films with surface nanostructures possessing excellent broad-band antireflection properties can be simply fabricated by using a simple sputtering-based method, namely, limited reactive sputtering at elevated temperature. A mixture of Ar and N2 gases with limited gas flow of N2 is used. During the process, the limited amount of the N ions and radicals can only consume some of the sputtered Al atoms for the formation of AlN, so that the Al-AlN composite thin film can finally be deposited on the substrate. Compared to the traditional cosputtering for composite deposition, which works necessarily with two or more targets simultaneously, here only a single Al target is required. When the substrate temperature is higher than 100 ˚C, surface nanostructures can be evolved because of the different diffusion kinetics of Al and AlN. The total reflection was reduced drastically (<10%) in the spectral range 300-2000 nm. The Al-AlN composite thin films exhibit also a good electric conductivity.
https://doi.org/10.1021/acsanm.7b00302